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GTS40PI120B9H IGBT Module

Features：

Field Stop Trench Gate IGBT

Short Circuit Rated >10μs

Low Saturation Voltage

Low Switching Loss

100% RBSOA Tested(2×Ic)

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Industrial Inverters

Servo Applications

IGBT, Inverter Maximum Rated Values(TC = 25℃unless otherwise specified) VCES Collector-Emitter Blocking Voltage 1200 V

VGES Gate-Emitter Voltage ±20 V

IC Continuous Collector Current TC = 80℃ 40 A

TC = 25℃ 80 A

ICM Peak Collector Current Repetitive TJ = 150℃ 80 A

tSC Short Circuit Withstand Time >10 μs

PD Maximum Power Dissipation (IGBT) TC = 25℃ TJmax=150℃

365 W

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Electrical Characteristics of IGBT (TC = 25℃unless otherwise specified) Static Characteristics

Symbol Description Conditions Min Typ Max Unit

VGE(th) Gate-Emitter Threshold Voltage IC = 1 mA, VCE = VGE 5.0 5.8 6.5 V

VCE(sat) Collector-Emitter Saturation Voltage IC =40A, VGE = 15V

TJ = 25℃ 2.15 2.50 V

TJ = 125℃ 2.45 V

ICES Collector-Emitter Leakage Current VGE = 0V, VCE = VCES, TJ = 25℃

1 mA

IGES Gate-Emitter Leakage Current VGE = ±20V, VCE = 0V, TJ = 25℃

100 nA

Cies Input Capacitance

VCE = 25V, VGE = 0V , f ＝1MHz

2.82 nF

Coes Output Capacitance 0.17 nF

Cres Reverse Transfer Capacitance 0.13 nF Switching Characteristics

td(on) Turn-on Delay Time

VCC = 600V,IC =40A, RG = 25Ω,VGE = ±15V, Inductive Load

TJ = 25℃ 172 ns

TJ = 125℃ 170

tr Rise Time TJ = 25℃ 83

ns TJ = 125℃ 88

td(off) Turn-off Delay Time TJ = 25℃ 201

ns TJ = 125℃ 222

tf Fall Time TJ = 25℃ 190

ns TJ = 125℃ 368

Eon Turn-on Switching Loss TJ = 25℃ 6.17

mJ TJ = 125℃ 7.09

Eoff Turn-off Switching Loss TJ = 25℃ 1.48

mJ TJ = 125℃ 2.77

Qg Total Gate Charge TJ = 25℃ 269 nC

RBSOA RBSOA IC=80A,VCC=1050V,Vp=1200V, RG = 25Ω, VGE=+15V to 0V, TJ =150°C Trapezoid

SCSOA SCSOA VCC = 600V, VGE = 15V, TJ = 150℃ 10 μs

RθJC IGBT Thermal Resistance: Junction-To-Case 0.34 /W℃

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Diode, Inverter Maximum Rated Values (TC = 25℃unless otherwise specified) VRRM Repetitive Peak Reverse Voltage 1200 V

IF Diode Continuous Forward Current 40 A

IFM Peak FWD Current Repetitive 80 A

Electrical Characteristics of FWD (TC = 25℃unless otherwise specified) Symbol Description Conditions Min Typ Max Unit

VFM

Forward Voltage IF = 40A TJ = 25℃ 1.90 2.20

V TJ = 125℃ 2.00

Irr Peak Reverse Recovery Current

IF=40A, di/dt =700A/μs, Vrr = 600V, VGE = -15V

TJ = 25℃ 18 A

TJ = 125℃ 22

Qrr Reverse Recovery Charge TJ = 25℃ 2.76

µC TJ = 125℃ 5.44

Erec Reverse Recovery Energy TJ = 25℃ 1.17

mJ TJ = 125℃ 2.30

RθJC Diode Thermal Resistance: Junction-To-Case 0.61 /W℃

IGBT, Brake-Chopper Maximum Rated Values (TC = 25℃unless otherwise specified) VCES Collector-Emitter Blocking Voltage 1200 V

VGES Gate-Emitter Voltage ±20 V

IC Continuous Collector Current TC = 80℃ 40 A

TC = 25℃ 80 A

ICM Peak Collector Current Repetitive TJ = 150℃ 80 A

tSC Short Circuit Withstand Time >10 μs

PD Maximum Power Dissipation (IGBT) TC = 25℃ TJmax=150℃

365 W

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Electrical Characteristics of IGBT (TC = 25℃unless otherwise specified) Static Characteristics

Symbol Description Conditions Min Typ Max Unit

VGE(th) Gate-Emitter Threshold Voltage IC = 1 mA, VCE = VGE 5.0 5.8 6.5 V

VCE(sat) Collector-Emitter Saturation Voltage IC =40A, VGE = 15V

TJ = 25℃ 2.15 2.50 V

TJ = 125℃ 2.45 V

ICES Collector-Emitter Leakage Current VGE = 0V, VCE = VCES, TJ = 25℃

1 mA

IGES Gate-Emitter Leakage Current VGE = ±20V, VCE = 0V, TJ = 25℃

100 nA

Cies Input Capacitance

VCE = 25V, VGE = 0V , f ＝1MHz

2.82 nF

Coes Output Capacitance 0.17 nF

Cres Reverse Transfer Capacitance 0.13 nF Switching Characteristics

td(on) Turn-on Delay Time

VCC = 600V,IC =40A, RG = 25Ω,VGE = ±15V, Inductive Load

TJ = 25℃ 172 ns

TJ = 125℃ 170

tr Rise Time TJ = 25℃ 83

ns TJ = 125℃ 88

td(off) Turn-off Delay Time TJ = 25℃ 201

ns TJ = 125℃ 222

tf Fall Time TJ = 25℃ 190

ns TJ = 125℃ 368

Eon Turn-on Switching Loss TJ = 25℃ 6.17

mJ TJ = 125℃ 7.09

Eoff Turn-off Switching Loss TJ = 25℃ 1.48

mJ TJ = 125℃ 2.77

Qg Total Gate Charge TJ = 25℃ 269 nC

RBSOA RBSOA IC=80A,VCC=1050V,Vp=1200V, RG = 25Ω, VGE=+15V to 0V, TJ =150°C Trapezoid

SCSOA SCSOA VCC = 600V, VGE = 15V, TJ = 150℃ 10 μs

RθJC IGBT Thermal Resistance: Junction-To-Case 0.34 /W℃

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Diode, Brake-Chopper Maximum Rated Values (TC = 25℃unless otherwise specified) VRRM Repetitive Peak Reverse Voltage 1200 V

IF Diode Continuous Forward Current 15 A

IFM Peak FWD Current Repetitive 30 A

Electrical Characteristics of FWD (TC = 25℃unless otherwise specified) Symbol Description Conditions Min Typ Max Unit

VFM Forward Voltage IF = 15 A TJ = 25℃ 1.60 1.90

V TJ = 125℃ 1.70

trr Reverse Recovery Time

IF=15A, -diF/dt=488A/μs( TJ=125℃) Vrr = 600V, VGE = -15V

TJ = 25℃ 241 ns

TJ = 125℃ 261

Irr Peak Reverse Recovery Current TJ = 25℃ 21.9

A TJ = 125℃ 24.7

Qrr Reverse Recovery Charge TJ = 25℃ 1.82

µC TJ = 125℃ 2.37

Erec Reverse Recovery Energy TJ = 25℃ 0.74

mJ TJ = 125℃ 1.28

RθJC IGBT Thermal Resistance: Junction-To-Case 1.13 /W℃

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Diode, Rectifier Maximum Rated Values (TC=25℃unless otherwise specified) VRRM Repetitive Peak Reverse Voltage TJ =25℃ 1800 V

IFRMSM Maximum RMS Forward Current Per Chip TJ =80℃ 50 A

IRMSM Maximum RMS Current At Rectifier Output TJ =80℃ 60 A

IFSM Surge Current @tp=10 ms TJ =25℃ 420

A TJ =150℃ 350

I2t I²t - Value TJ =25℃ 900

A2s TJ =150℃ 650

Electrical Characteristics of Diode (TC=25℃unless otherwise specified) Symbol Description Conditions Min Typ Max Unit

VF Forward Voltage IF = 40 A TJ =25℃ 1.10

V TJ =150℃ 1.00

IR Reverse Current VR= 1600V TJ =25℃ 1 mA

RθJC IGBT Thermal Resistance: Junction-To-Case 0.47 /W℃

Internal NTC-Thermistor Characteristics R25 TC =25℃ 5 kΩ

△R/R TC =100℃，R100 =481Ω ±5 %

P25 TC =25℃ 50 mW

B25/50 R2=R25 exp[B25/50(1/T2-1/(298.15K))] 3380 K

B25/80 R2=R25 exp[B25/80(1/T2-1/(298.15K))] 3440 K

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Module Symbol Description Conditions Min Typ Max Unit

Viso Isolation Voltage (All Terminals Shorted) f = 50Hz, 1minute 2500 V

TJ Maximum Junction Temperature 150 ℃

TJOP Maximum Operating Junction Temperature Range -40 150 ℃

Tstg Storage Temperature -40 125 ℃

CTI Comparative Tracking Index 200

RθCS Case-To-Sink Thermally (Conductive Grease Applied) 0.1 /W℃

T Mounting Screw:M4 2.0 2.3 N·m

G Weight 40 g

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10

20

30

40

50

60

70

80

1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0VCE(V)

IC(A

)

VGE=15V TJ=25℃ TJ=125℃

0

10

20

30

40

50

60

70

80

1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0VCE(V)

IC(A

)

Tj=125℃ VGE=9V VGE=11V VGE=13V VGE=15V VGE=17V

Fig.1 Typical Saturation Voltage Characteristics (Inverter) Fig.2 Typical Output Characteristics (Inverter)

10

20

30

40

50

60

70

80

1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6VF(V)

IF(A

)

Tj=25℃ Tj=125℃

10 20 30 40 50 60 70 800

2

4

6

8

10

12

14

16

18

20

22

E(m

J)

IC(A)

VCC=600V,VGE=+/-15V,Rg=25ohm,Tj=125℃

Eon Eoff Erec

Fig.3 Forward Characteristics of FWD (Inverter) Fig.4 Typical Switching Loss vs. Collector Current (Inverter)

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5 10 15 20 25 30 35 40

2

3

4

5

6

7

8

9

10

E(m

J)

Rg(Ω）

VCC=600V,VGE=+/-15V,Ic=40A,Tj=125℃

Eon Eoff Erec

1E-5 1E-4 1E-3 0.01 0.1 10.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

ZthJ

C(K

/W)

time(s)

ZthJC:IGBT

Fig.5 Typical Switching Loss vs. Gate Resistance (Inverter) Fig.6 Transient Thermal Impedance IGBT (Inverter)

1E-5 1E-4 1E-3 0.01 0.1 10.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

time(s)

ZthJ

C(K

/W)

ZthJC:Diode

0 200 400 600 800 1000 12000

20

40

60

80

IC(A

)

VCES(V)

Tj=150℃ Chip Module

Fig.7 Transient Thermal Impedance Diode (Inverter) Fig.8 Reverse Bias Safe Operation Area (RBSOA)

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10

20

30

40

50

60

70

80

1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0VCE(V)

IC(A

)

VGE=15V TJ=25℃ TJ=125℃

0

5

10

15

20

25

30

0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

TJ=25℃ TJ=125℃

VF(V)

IF(A

)

Fig.9 Typical Saturation Voltage Characteristics Fig.10 Forward Characteristics of Diode （Brake-Chopper） （Brake-Chopper）

0

20

40

60

80

100

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8VF(V)

IF(A

)

TJ =25℃

TJ =150℃

10 20 30 40 50 60 70 80 90 100 110 1200

2

4

6

8

10

R(K

ohm

)

TC(℃)

Rtyp

Fig.11 Forward Characteristics of Diode (Rectifier) Fig.12 NTC Temperature Characteristics

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Internal Circuit:

Package Outline (Unit: mm):

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Date Revision Notes 11/20/2019 A Final Version. 01/15/2020 B Revised Brake-Chopper Test Data.

Announcement Information in this document is believed to be accurate and reliable. However, NJSME does not

give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to Make Changes NJSME reserves the right to make changes to information published in this document, including

without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.