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Functional Devices, P.G., ENST 1
Functional Devices
for all Optical NetworksEurOpnet 2001 Tutorial, January 30
Philippe GallionEcole Nationale Supérieure des Télécommunications
URA CNRS 82046, rue Barrault, 75634 Paris
Functional Devices, P.G., ENST 2
New Optical Functional Devices
• 1 - Interest in All Optical Signal Processing• 2 - Physics Phenomena• 3 - Wavelength Conversion• 4 - Nonlinear Mirror Demultiplexing• 5 - 3R Regeneration• 6 - Conclusion
Functional Devices, P.G., ENST 3
1 - Interest in All Optical Signal Processing
• Bandwidth requirement• OTDM versus (D)WDM• From Optoelectronic to «ÊAll OpticalÊ» Signal Processing Ê
Functional Devices, P.G., ENST 4
Bandwidth requirement
• Bandwidth: 1nm @1.55 µ = 125Ghz @ 193THz- Today radio-frequency range < 100GHz- Overall optical fiber bandwidth: few 10THz btwn 1.3 & 1.5µ- Erbium amplifier bandwidth: few THz btwn1.53 & 1.56µ- Today needs : 100 Gbit/s to 1 Tbit/s per fiber?- Electronic bandwidth : few 10GHz
• Up to now:- Optical transmissions- Commutation, Routing & Processing in electronic domain- O/E & E/O conversions : slow, expensive (packaging), noisy, scrambling of the
optical phase, lack of transparency...
• How to increase the bandwidth?
Functional Devices, P.G., ENST 5
The first reported WDMexperiment:
Rê Horaky(the sun at noon)
transmits aWDM light beam
to the praying Tapéret(800-900 B.C.)
Le Louvre, Paris
Functional Devices, P.G., ENST 6
OTDM versus (D)WDM
Mux R2
R1
Ri
OpticalLink
E/O
R2
R1
Ri E/O
E/O
λ1
λ2
λι
λ1
λ2
λ3
E/O
E/O
E/O
λ1 λ2 λι
Demux
• Wavelength Division Multiplexing (WDM)
• Optical Time Domain Multiplexing (OTDM)
Ri
Mux R2
R1Optical
Link
E/O
R2
R1
Ri E/O
E/O
λ
λ
λ
λ
λ
λ
E/O
E/O
E/Oλ Demuxλ
Single λOpticalSource
Functional Devices, P.G., ENST 7
From Optoelectronic to «ÊAll OpticalÊ» Signal Processing
• Transmission– OTDM versus (D)WDM– Pulse generation & pulse shaping– Dispersion compensation...
• Routing– Wavelength Conversion– Fix and programmable Optical Add & Drops (OAD)– Restauration– Optical Cross Connect (OXC)…
• Optical signal processing– Optical Demultiplexing– Address label reading– Clock (phase) Recovery– Optical Regeneration : Re-amplification, Re-timing, Re-shaping (3R)...
• Supervision: “Êwave watcherÊ”• ...
Functional Devices, P.G., ENST 8
2 - Physical Phenomena
• Semiconductors Inter-band Dynamics• Semiconductors Intra-band Dynamics• Non-linearities in optical fiber
Functional Devices, P.G., ENST 9
Semiconductors Inter-band Dynamics• Gain and refractive index dependent on the carrier density
Gain saturation
• Typical time constant from 0,1 to 1 ns determined by the effective carrierlifetime
• Strong effect: power < 1mw, interaction length ≈ few 100µ• Phase-amplitude coupling :
α = few units
τeff−1 = τs
−1
Differential spontaneous emission rate
1 2 3 + ∂ GP( ) ∂N
Differential stimilated emission rate
1 2 4 4 3 4 4
τ s = Spontaneous carrier lifetime (↓ when I ↑) P = Photon density
α = ∆ ′ n ∆ ′ ′ n with n = ′ n − j ′ ′ n
G(N) = A(N − N0 )A = Differential gainG = Optical gainN0 = Carrier density for transparency
Functional Devices, P.G., ENST 10
ChirpingÊ in a SOA
• When the optical Power increases :- The carrier density decreases- The refractive index increases (plasma effect)- The optical frequency decreases
Functional Devices, P.G., ENST 11
Semiconductors Intra-band Dynamics
• A strong stimulated rate disturbs quasi-equilibrium
– ε gain compression factor– P photons density
• ps time constant determined by intra-band thermalizations• Gain compression (or compression)
– qlq % (heterostructure)– 10% (quantum wells )
G(N, P) = A(N − N0 )(1 − εP)
Pump
Gain suppression dip
Gain saturation level
Functional Devices, P.G., ENST 12
Cross Gain Modulation (XGM)
Gain
Gain Max
Pinput
3dB
Psaturation
E1 = I1 exp jϕ1 E2 = I2 exp jϕ2 with I2 << I1
Two beams with intensity I1
and I2 in the same SOA
When I1 saturates the gain, I2experiments also a reduced gain :
XGM
E2 experiments also the index changeassociated to the gain change (XPM)
XGM
Functional Devices, P.G., ENST 13
Nonlinear Index and Cross Phase modulation (XPM)
• Carrier heating– Large bandwidth (<10nm) , asymmetrical– High nonlinear index (α near 1)
• Spectral hole burning– Low bandwidth(<10nm) symmetrical– Low nonlinear index (α near 0)
Gain
Frequency
Index
FrequencyLasingFrequency
LinearNonlinear
Kramers-Kronig’s
Transformation(Hilbert’s
Transformation)E1 = I1 exp jϕ1
E2 = I2 exp jϕ2
XPM
Functional Devices, P.G., ENST 14
Four Wave Mixing (FWM) in Semiconductor Optical Amplifier (SOA)
• Physical origins:– Interband for low frequencies : carrier density modulation,– Intraband for high frequencies : nonlinear gain i.e. carrier heating , spectral-hole-
burning, 2 photon absorption, Kerr effect• Application to Wavelength conversion, 3R regeneration, Spectrum inversion• Spurious effect in WDM systems
Functional Devices, P.G., ENST 15
FWM New Frequencies Generation in WDM Systems
Input Output
Functional Devices, P.G., ENST 16
Nonlinearities in optical fiber• Optical Kerr effect
– Polarization:
– Index:
• Self Phase Modulation (SPM) & Cross Phase Modulation (XPM)• Low effect but transverse confinement and longitudinal integration
• Very fast effects but:– Walk off problems– Other concurrent nonlinear effects
P(E) = ε0 χ(1)Elinear1 2 3 + 2χ (2)E2
=0 (symetry)1 2 4 3 4 + 4χ
(3)E3
Kerr effect1 2 4 3 4 + ....
n(ω, I) = n(ω)dispersion{ + n2 I
Kerr effect { with I = E2 2Z0
∆ϕ =2πλ0
n2LS
Ρ ∆ϕ = π for PL = 1W.kmL = length ≈ kmS = cross section ≈ 50µ2λ0 = wavelength =1,5µP = optical poower
Functional Devices, P.G., ENST 17
Self Phase Modulation (SPM)& Cross Phase Modulation (XPM)
• Self Phase Modulation (SPM)
• Cross Phase Modulation (XPM)
E = I exp jϕ
E1 = I1 exp jϕ1E2 = I2 exp jϕ2
with I2 << I1
SPM
XPM
Functional Devices, P.G., ENST 18
Nonlinear Propagation: Soliton• Linear Propagation:
• Nonlinear Propagation:
k(ω) =ω0
vϕ+ (ω − ω0 )
vG
+ (ω − ω0 )2
2!∂∂ω
1vG
Phase Enveloppe Enveloppe Propagation Propagation Distorsion
k(ω) =ω0
vϕ+ (ω − ω0 )
vG
+ (ω − ω0 )2
2!∂∂ω
1vG
+ ... + γI
Phase Enveloppe Enveloppe Nonlinearities Propagation Propagation Distorsion
Functional Devices, P.G., ENST 19
3 - Wavelength Conversion• Wavelength converter• Cross Gain Modulation (XGM) in an SOA• Cross Phase Modulation (XPM) in an SOA• Gain Modulation in Semiconductor Laser (SCL)• Wavelength conversion in bistable Laser Structure• Four Wave Mixing (FWM) in a SOA
Functional Devices, P.G., ENST 20
Wavelength Converter
• Wavelength routing• Wavelength re-use• WDM network reconfiguration• Optical circuit & packet (ATM…IP) switching
↓ tuning control
λin →
Modulated optical input
λout →
Modulatedoptical output
↑ gain control
Wavelengthconverter
Functional Devices, P.G., ENST 21
ATM Matrix for wavelength routing
1
N
1
K
K
1
K 1
0xT
(K-1)xT
N''
1'
Wavelength encoder Spatial switch
MemoryStar coupler
CONTROL UNIT
Inpu
ts
Out
puts
Wavelength converter
Optical gateDelay line D
Coupler 1:K
FilterDetector
1''
N'
D
D
Europeen Project ACTS OPEN et KEOPSFunctional Devices, P.G., ENST 22
Expected Properties• All optical device:
– Transparent to modulation format– Bit rate independent: 155Mb/s à 10 Gb/s….40Gb/s– No clock recovery requirement
• Flexible implementation– Speed (10 Gbit/s and more)– Wide conversion range– Up conversion & down conversion allowed– Polarization independent– Input wavelength rejection
• No BER penalty (cascability)– High extinction (on /off) ratio– No jitter– No chirp– Amplification of the signal level– Pulse reshaping…
All of them together ?
Functional Devices, P.G., ENST 23
Optoelectronic conversion v.s. all optical conversion
• Optoelectronic conversion– No bit rate transparency– Bit rate bottleneck– Noise– Cost (packaging)
• All optical conversion– Bit rate transparency– High bit rate– Possible pulse regeneration– Integration: low cost
λElectronicalprocessing
λ 1 2
OpticalProcessing
λ λ21
Functional Devices, P.G., ENST 24
Cross Gain Modulation (XGM) in an SOA(TU Denmark)
The carrier depletioninduced by (λ1)modulated signalamplification reduce theavailable gain for theCW signal (λ2)amplification
CWλ2
λ1
filterλ 1
λ 2 λ2
Functional Devices, P.G., ENST 25
Performances for XGM in an SOA
• Large conversion range:– Few10nm, i.e. few 1000GHz– Gain bandwidth limited
• Modulation bandwidth:– Few 10 Gbit/s– Carrier lifetime limited
• Low chirp
• But:– Inverted modulation (even cell number required)– External output carrier generation– High driving signal level: 0 to -10 dBm– Low on/off ratio: 5 to 10 dB
Functional Devices, P.G., ENST 26
Cross Phase Modulation (XPM) in an SOA Mach Zendher Interferometer (MZI) Conversion
• Cross Phase Modulation (XPM)• Low control power ( only a phase shift π is required)• Accurate control power• Polarization independent• Possible up conversion and down conversion• Low chirp• 40 Gbit/s operation already demonstrated• Optical Cross Connect (OXC) 16x10 Gbit/s already demonstrated
SOA
SOA
CouplerCoupler
filterInput signal
CW signal
Converted signal
Functional Devices, P.G., ENST 27
Gain Modulation in Semiconductor Laser (SCL) Oscillator
• The carrier depletion induced by (λ1) signal injection reduce the availablegain for the CW lasing (λ2) operation
• Gain and index changes result in simultaneous AM and FM (i.e. chirped)output
• Few10 Gbit/s, On/Off Ratio > 10dB, Pcontrol = few dBm
Bragg region
Ι1 Ι2 ΙB
filterλ 1
λ 2 λ 2
λ 1
AM and FM
Functional Devices, P.G., ENST 28
Wavelength Conversion in Bistable Laser Structure
• Saturable absorption– Non injected (i.e. unpumped) region– Vanish out under light injection
• Operation up to 40GBit/s demonstrated• Possible re-timing operation by simultaneous optical or
electrical clock modulation
active region Bragg region
reff ( ω )
Ι 1 Ι 2 Ι B
active region
saturable absorber
λ2λ1
Functional Devices, P.G., ENST 29
Output Wavelength Tuning
• Mode hopping• Progressive index saturation results in tuning efficiency (slope) reduction
0 20 40 60 80 1001551.0
1552.0
1553.0
1554.0
Injection current in the Bragg section (mA)
Lasing wavelength (nm)
Lasing wavelength vs. injection current in the Bragg section
Functional Devices, P.G., ENST 30
Optical Bisability
The bistability improve the on/off ratio)Reshaping possibility
t
Pin
Pin
PoutPout
Functional Devices, P.G., ENST 31
BER influence
10-10
10-8
10-6
10-4
10-2
-22 -20 -18 -16 -14 -12Received power (dBm)
Bistable laserReference
Bit-error-rate
Low degradation (or small improvement!) of the BER allows large scale cascability
Functional Devices, P.G., ENST 32
Four Wave Mixing (FWM) in a SOA
1545 1555 1565
-40
-20
0
Wavelength (nm)
Powe
r (dB
m) Pump
SignalConjugatedSignal
Beating at the frequencydifference ωSIGNAL-ωPUMP
SOAsignal
pump
• Applications :– Wavelength conversion– All optical clock recovery– Spectrum inversion
• Spurious effect:– Diaphotie in WDM systems
Functional Devices, P.G., ENST 33
Conversion efficiencyη =
POUTCONJUGATED
PINPROBE SIGNAL
Functional Devices, P.G., ENST 34
SOA Four Wave Mixing Efficiency(BT Labs)
104
20
101 102 103-40
-30
-20
-10
0
10
Eff
icie
ncy
(dB
)
Detuning (GHz)
20
Eff
icie
ncy
(dB
)
101 102 103 104-40
-30
-20
-10
0
10
Detuning (GHz)
simulationexperiment
• Physical origins:– Interband for low frequencies : carrier density modulation,– Intraband for high frequencies : nonlinear gain i.e. carrier heating , spectral-
hole-burning, 2 photon absorption, Kerr effect• Takes benefit of built-in gain
Interband Interband+
intraband
Functional Devices, P.G., ENST 35
FWM Performances(ENST)
• Transparency for the modulation format• High bit rate• Wide conversion range (65nm) by multiple conversion• Polarization dependent
Functional Devices, P.G., ENST 36
4 - Optical Demultiplexing by Nonlinear Mirror
• Optical Linear Mirror Loop• Optical Nonlinear Mirror Loop• Nonlinearity realization• SLALOM• 4x10GBit/s Demultiplexing
Functional Devices, P.G., ENST 37
Optical Linear Mirror LoopLinear Optical Loop Mirror (LOLM)
COUPLEUR
BOUCLE LINEAIRE ET RECIPROQUE
(1−α)1/2
α1/2j
E
E
E
0
R
T
• Repartition coefficients for intensity :
• Repartition coefficients for amplitude :
• Transmitted reflected fields for E0 =1:
• In linear regime output port is the input port (mirror)
A= : (1 − α) and A× : α
a= : (1 −α )1/ 2 and a× : jα1/ 2
ER = 2a=a× = 2 jα1 / 2 (1 −α )1/ 2 = j for α = 1/ 2ET = a=
2 + a×2 = (1− α ) − α = 0 for α = 1/ 2
Incident
Transmitted
Reflected LinearReciprocal
LoopCoupler
Functional Devices, P.G., ENST 38
Nonlinear Optical Loop Mirror (NLOLM)
• Clockwise & unclockwise equal intensities : NL phase shift are identical• Tuning for a nonlinear phase difference de phase equal to π• Tradeoff between contrast (α ≈ 1/2) & sensitivity (α ≠ 1/2)• High level signal (1) transmission (NL regime)• Low level signal (0) reflection (NL effects are negligible)
COUPLEUR BOUCLE NON-LINEAIRE
E
E
E
0
R
T
(1−α)1/2expj Φ NL1
expjα1/2j Φ NL2
Non LinearLoop
Coupler
Incident
Transmitted
Reflected
Functional Devices, P.G., ENST 39
Non linearity realizationFiber or semiconductor amplifier
• 1 - Cross phase Modulation (XPM) in a fiber (NOLM)- Very fast(>100GHz)- High optical driving signal level (10 to 30dBm)- Long length(1km)
• 2 - Cross phase Modulation (XPM) in SC amplifier (SLALOM)Semiconductor Laser Amplifier in a Loop Optical Mirror
- Fast (<20GHz, inter-band & <100GHz intra-band)- Low optical driving signal level ((-10 à 10dBm)- Compact (<1mm)
• Utilizations :- Intensity Filter- Correlator- Demuliplexer ....
Functional Devices, P.G., ENST 40
SLALOMSemiconductor Laser Amplifier in a
Loop Optical Mirror
≈Filtre
coupleur 50/50
coupleur 100/0
contrôle (pompe)
données démultiplexées
t
SOA
données multiplexéesInput data
Output data
Control data (pump)
Functional Devices, P.G., ENST 41
4x10GBit/s Demultiplexing(HHI)
Functional Devices, P.G., ENST 42
5 - 3R Regeneration
Re-amplification, Re-timing, Re-shaping (3R)
• Re-amplification• Pulse reshaping by nonlinear filtering• Re- timing (Re-synchronization)• Clock (phase) recovery• 3R Regeneration• MZI all optical regeneration• All optical regeneration using FWM in SOA
Functional Devices, P.G., ENST 43
Re-amplification
PIN
POUT Non linear transfert function
Signal
Signal
Noise
Noise
• Re-amplification is limited by accumulated ASE and limited amplifier outputpower• On/off ratio improvement by nonlinear response• Different processing for weak (0) & strong (1) signals• Act as digital electronics
PIN
POUT Non linear transfert function
Noise
Noise
Functional Devices, P.G., ENST 44
AmplifiedSpontaneous
Emission (ASE)Suppression
(France Telecom)
Functional Devices, P.G., ENST 45
Noise Suppression & Intensity Modulation(Tokyo Institute of Technology)
• Intensity noise of a spectrum-sliced incoherent source
• Gain saturated SOA with currentmodulation
• Beat noise reduction• Noise error floor observed with
LiNbO3 linear modulation isremoved
Functional Devices, P.G., ENST 46
Pulse reshaping by nonlinear filtering
PIN
POUT
tt
Input
Outputs
reflected transmitted
Non linear transfert function
Functional Devices, P.G., ENST 47
Re-timing (Re-synchronization)
Clock Recovery
OpticalGate
Input
Output
Input
GateOpening
Outputafter the Gate
Output after PowerControl
de la porteFunctional Devices, P.G., ENST 48
Clock (phase) recovery
- Large wavelength deviation (13 nm)- Low time jitter (11 ps)- High bit-rate (3.8 GHz).
Mode locked laser
Clock signal
1 1 1 0 1 0
Self-Pulsating laser
Clock signalR.Z. Data Sequence
1 1 1 0 1 0
Functional Devices, P.G., ENST 49
Self Pulsating Laser
Laser DFB Autopulsant
I1 I2
t
puissance optique
TAP = 1/f AP
• Self pulsation origins:– Instabilities in longitudinal carrier or field distributions (Spatial-Hole Burning)– Dispersive self Q-switching associated to the negative slope of the Bragg grating
Self pulsating laser
Ouput power
Functional Devices, P.G., ENST 50
Synchronization time(HHI)
• 10 Gbit/s• 1ns (10 “one” bits)
locking time• Synchronization resist
to > 100 “zero” bits
• Compatible with IPpacket switching
a - data signalb - clock signalc - recovered clock signal
Functional Devices, P.G., ENST 51
Jitter & AmplifiedSpontaneous
Emission (ASE)Suppression
(France Telecom)
Functional Devices, P.G., ENST 52
3R Regeneration
Amplification
Power Control
ClockRecovery
OpticalGate
Non-linear Filter
Input
Output
Reamplification
Reshaping
Retiming
Functional Devices, P.G., ENST 53
MZI all optical regeneration - 1
SOA
SOA
Coupler Coupler
filterClock signalRegenerated signal
Input signal
Input signal
• XPM is the key phenomena• Up to 40Gbit/s operation demonstrated
Functional Devices, P.G., ENST 54
MZI all optical regeneration - 2(Alcatel Corporate Research Center)
• 2 cascaded MZI to improve nonlinear response• 20 and 40 Gbit/s operation• 1.2 dB penalty• Polarization insensitivity and10 dB power dynamic range
Functional Devices, P.G., ENST 55
All optical regeneration using FWM in SOA(ENST)
• PUMP = SIGNALPROBE =CLOCK
• The squaring improvedthe On/off ratio
• The pulse overlap is thecorrelation process betweenclock and signal
4
6
8
10
12
14
2 4 6 8 10 12
Input extinction ratio (dB)
Oup
ut e
xtin
ctio
n ra
tio
(dB
)
0 dB improvement
Theoretical limitPFWM ∝ PPUMP
2 .PPROBE
l Psignal/P clock = 20 dB∆ Psignal/P clock = 10 dB
Functional Devices, P.G., ENST 56
Nonlinear Fiber Devices
Semiconductor Optical Devices(Intraband dynamics)
Semiconductor Optical Devices(Interband dynamics)
Fast electronical Devices
High IntegrationElectronical Devices
10 7 10 8 109 10 10 1011 10 12 (Hz)
Conclusion - 1
IntegrationPossibility
Functional Devices, P.G., ENST 57
Conclusion - 2• Nonlinearity allows light with light interaction
–They are the key phenomena for all optical devices
• Nonlinearity is spurious in analog devices and systems• Digital electronics takes benefit if it at each step
–They are the key phenomena for optical regeneration
• The all optical processing do not exist!– It a user (system) point of view– Electrons play a key role in light- matter interaction–The speedy user have no time left to look at it
• Wide range of functional devices is today available• Are this grapes too unripe? (Jean de La Fontaine)