6
Barium record Fujifil and un BaFe cartrid Fujifil FU N D E B m Ferrite (Ba ding density w lm’s LTO 6 a niformly coat e is already u ges. lm patented UJIFIL ANOCUBIC ispersion an Each techno BaFe is the aFe) is a new without mag and future ge ted magneti used and pro technology M tap C technology nd NANO Co ology underg latest techno w type of ma gnetic signal enerations o c layer. oven in ente pe tec is compose oating goes continu ology in NAN agnetic partic loss: of LTO will u erprise produ chnol ed of the follo uous improve NO Particle. cle which ca se BaFe par ucts such as logies owing three ement and re an be greatly rticles with N s Oracle's T1 s technologie efinements y reduced in NANOCUBIC 10000C and es: NANO Pa size to impr C technology IBM’s 3592 article, NANO rove y for a thin JC tape O

FUJIFILM tape technologies · 2015. 11. 4. · Fe) is a new ithout mag nd future ge ed magneti sed and pro technology M tap technology d NANO Co logy underg latest techno type of

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Page 1: FUJIFILM tape technologies · 2015. 11. 4. · Fe) is a new ithout mag nd future ge ed magneti sed and pro technology M tap technology d NANO Co logy underg latest techno type of

Bariumrecord ・Fujifiland un ・BaFecartrid ・Fujifil

FU

ND ・E ・B

m Ferrite (Bading density w

lm’s LTO 6 aniformly coat

e is already uges.

lm patented

UJIFILANOCUBICispersion an

Each techno

BaFe is the

aFe) is a newwithout mag

and future geted magneti

used and pro

technology

MtapC technologynd NANO Co

ology underg

latest techno

w type of magnetic signal

enerations oc layer.

oven in ente

petec is composeoating

goes continu

ology in NAN

agnetic particloss:

of LTO will u

erprise produ

chnoled of the follo

uous improve

NO Particle.

cle which ca

se BaFe par

ucts such as

logiesowing three

ement and re

an be greatly

rticles with N

s Oracle's T1

s technologie

efinements

y reduced in

NANOCUBIC

10000C and

es: NANO Pa

size to impr

C technology

IBM’s 3592

article, NANO

rove

y for a thin

JC tape

O

Page 2: FUJIFILM tape technologies · 2015. 11. 4. · Fe) is a new ithout mag nd future ge ed magneti sed and pro technology M tap technology d NANO Co logy underg latest techno type of

BaF Size Currenapproxdata c In addsquaresingle will be

Fe part

nt LTO 5metximately 20nartridges.

ition, Fujifilme inch recordtape cartridg

e applied for

ticle ch

tal particles nm. The sma

m succeededding density ge capable ofuture BaFe

aracter

(MP (G5)) aaller size ena

d in developwith IBM in of holding 35

e products.

ristics

re approximables much

ing even sm2010. The d5 terabytes o

mately 40nm higher recor

maller BaFe pdemonstratioof uncompre

in size wherrding density

particles andon points to essed data.

reas BaFe py resulting in

d demonstrathe possibiliThese much

 

particles aren super high

ated 29.5 billity of develoh smaller Ba

h capacity

ion bits per ping a

aFe particless

Page 3: FUJIFILM tape technologies · 2015. 11. 4. · Fe) is a new ithout mag nd future ge ed magneti sed and pro technology M tap technology d NANO Co logy underg latest techno type of

Comp Metal reductSmalle

MP (Gallows MP

     BaF

   

 

position and

particles reqtion in particer particles w

G5) particles s much bette

P Acicular S

Fe Hexagon

Metal powde LTO5

d Shape

quire a protele size that cwith higher s

have an acier orientation

Shape

nal disc sha

r (FeCo alloy)5

ective passivcan be achiestability can b

cular shapen control and

ape

vation coatingeved. BaFe pbe achieved

. BaFe particd lower flux d

Barium-ferri Cur

50nm

g to preventparticles are

d with BaFe

cles are hexdensity resul

te (BaO(Fe2O3rrent

t oxidation. e oxides so a

xagonal disclting in highe

3)12)

The passivaa passivation

c shaped. Ther signal to n

Barium-fer Fu

ation layer aln layer isn’t

he hexagonanoise ratio.

rrite (BaO(Fe2Outure

lso limits theneeded.

al shape

O3)12)

e

Page 4: FUJIFILM tape technologies · 2015. 11. 4. · Fe) is a new ithout mag nd future ge ed magneti sed and pro technology M tap technology d NANO Co logy underg latest techno type of

MP an Scanncoated

   

 

Orien

BaFe

Perp

 

  

nd BaFe Ta

ning Electrod onto the t

                  

ntation cont

e particle ch

pendicular or

ape Surface

on Microscotape suppo

     MP( G5

trol of BaFe

haracteristics

rientation wi

e Comparis

ope Image ort. Note th

5)                

e

s allow for b

ll be applied

son

of the Tapee relative s

                  

        

better orienta

d to future Ba

e surface: ize and sha

                  

        

ation control

aFe products

MP and Baape differen

              Ba

and therefo

s.

aFe particlences.

aFe  

ore higher sig

es appearan

gnal to noise

nce as

 

e ratio.

 

Page 5: FUJIFILM tape technologies · 2015. 11. 4. · Fe) is a new ithout mag nd future ge ed magneti sed and pro technology M tap technology d NANO Co logy underg latest techno type of

BaFe Recording characteristics High Output Supports High Density Recording

Output Signal to Noise Ratio (SNR) of BaFe particle tape is far better than that of MP (G5) tape enabling higher linear density and recording capacity.

Frequency characteristics Barium Ferrite has better frequency characteristics compared to metal particles resulting in a significantly increased margin of recording capability. Therefore, it is expected that Fujifilm LTO 6 can be written to and read even when the ability of the drive’s recording head has diminished after repeated use.

 

0

5

10

15

20

25

300 400 500 600

SN

R (

dB

)

Linear density (kbpi)

 

LTO6 

(384kbpi) 

Future BaFe  

LTO6 BaFe

MP (G5)

Page 6: FUJIFILM tape technologies · 2015. 11. 4. · Fe) is a new ithout mag nd future ge ed magneti sed and pro technology M tap technology d NANO Co logy underg latest techno type of

 

LOFe

Long ArOxidation is o

errite is alrea

In FUJits reli

MP shperfor

rchival one of the caady oxidized

JIFILM’S expability over m

hows slight drmance

Life auses of magd and therefo

periments, Bmore than a

degradation

gnetic particore has a m

BaFe withsta30 year tim

in magnetic

cle deterioratuch longer li

ands realistice period.

signal over

tion with posife compare

c storage en

30 years, al

ssible data lod to metal p

nvironment s

lthough not d

oss. Howevearticles.

simulations a

detrimental

er, Barium

and proves

to read/write

e