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8/13/2019 FPGA implementatoin
1/19
Reactivation Noise Suppression
With Sleep Signal Slew Rate
Modulation in MTCMOS Circuits
Under the Guidance of
Y.Baba Salauddin,M.Tech Presented By
Asst.professor. A.Reddeiah,
(11741D5713)
8/13/2019 FPGA implementatoin
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OBJECTIVE
Multi-threshold CMOS(MTCMOS) is commonly used
for supressing leakage currents in idle intregated
circuits.
Power and ground distribution network noiseproduced during sleep to active mode in MTCMOS
circuits.
Sleep signal slew rate modulation techniques for
suppressing mode-transition noise are explored in
this project.
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INTRODUCTION
Multi-threshold CMOS (MTCMOS) also known as
power/ground gating is most commonly used for
leakage power reduction .
With more frequent transitions between ACTIVE and
SLEEP modes operation to achieve more effective
leakage power savings, reactivation noise has become
an important concern in modern ICs.
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EXISTED SYSTEM
The sub threshold leakage currents currentlydominate the overall power consumption.
When the MTCMOS technique is directly
applied to the sequential circuit, the data inthe elements is lost during the sleep mode.
Single-phase sleep signal slew rate modulation
and Stepwise Vgs MTCMOS techniques aregives Less performance and high powerconsumption.
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PROPOSED SYSTYEM
The single phase sleep signal slew ratemodulation technique is not suitable for fast
and energy efficient power/ground gating in
high performance integrated circuits.
In this proposed system, Digital triple phase
sleep signal slew rate modulation is used.
This technique is commonly aimed to reducepower consumption, increases speed and
reduces noise in MTCMOS circuits.
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Sleep signal slew rate modulator techniques
Three types of techniques are using to supress
the noise in the MTCMOS circuits.
1.Single-phase sleep signal slew rate modulator
2.Stepwise Vgs MTCMOS.
3.Triple-phase sleep signal slew rate modulator
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SINGLE-PHASE SLEEP SIGNAL
SLEW RATE MODULATION
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When the voltage level of the sleep signal is
lower than the threshold voltage ,the sleeptransistor operates in weak inversion region.
The noise induced on the ground distributionnetwork is negligible for Vgs
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Stepwise Vgs MTCMOS
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A stepwise Vgs MTCMOS circuit is activated in
two steps as follows.
The sleep signal transitions from 0V to an
intermediate voltage level Vx (0v < Vx < Vdd)during the first step of a reactivation event.
The sleep transistor is weakly activated with alow gate voltage (Vx).
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Triplephase sleep signal slew rate modulation
An alternative triple-phase sleep signal slewrate modulation (TPS) technique is to suppress
the reactivation noise while accelerating the
reactivation process in MTCMOS circuits.
sleep transistor produces negligible noise in the
weak inversion region of operation (when Vgs