FDMC86240 datasheet

8/13/2019 FDMC86240 datasheet

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July 2010

2010 Fairchild Semiconductor CorporationFDMC86240 Rev.C

www.fairchildsemi.com1

FDMC86240N-C

hannelPowerTrench

MO

SFET

FDMC86240N-Channel Power Trench MOSFET

150 V, 16 A, 51 mFeatures

Max rDS(on)= 51 mat VGS= 10 V, ID= 4.6 A

Max rDS(on)= 70 mat VGS= 6 V, ID= 3.9 A

Low Profile - 1 mm max in Power 33

100% UIL Tested

RoHS Compliant

General Descript ion

This N-Channel MOSFET is produced using Fairchild

Semiconductors advanced Power Trench process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Appl ication

DC - DC Conversion

G

S

S

S

D

D

D

D

5

6

7

8

3

2

1

4

Bottom

DD

DD

S

SS

G

Top

Pin 1

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 C unless otherwise noted

Thermal Characteristi cs

Package Marking and Ordering Information

Symbol Parameter Ratings Units

VDS Drain to Source Voltage 150 V

VGS Gate to Source Voltage 20 V

ID

Drain Current -Continuous (Package limited) TC = 25 C 16

A -Continuous (Silicon limited) TC = 25 C 19

-Continuous TA = 25 C (Note 1a) 4.6

-Pulsed 20

EAS Single Pulse Avalanche Energy (Note 3) 34 mJ

PDPower Dissipation TC= 25 C 40

W

Power Dissipation TA= 25 C (Note 1a) 2.3TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 C

RJC Thermal Resistance, Junction to Case 3.1C/W

RJA Thermal Resistance, Junction to Ambient (Note 1a) 53

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86240 FDMC86240 Power 33 13 12 mm 3000 units


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FDMC86240N-C

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FDMC86240 Rev.C

Typical Characteristics TJ= 25 C unless otherwise noted

Figure 1.

0 1 2 3 4 50

5

10

15

20

VGS= 4.5 V

VGS= 6 VVGS= 5 V

PULSE DURATION = 80 s

DUTY CYCLE = 0.5%MAX

VGS= 5.5 V

VGS= 10 V

ID,

DRAINCURRENT(A)

VDS

, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

0 5 10 15 200.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 V



NORMALIZE

D

DRAINTOSOURCEON-RESISTANCE

ID, DRAIN CURRENT(A)

VGS = 6 V

VGS= 5 V

VGS= 4.5 V

VGS = 5.5 V

Normalized On-Resistancevs Drain Current and Gate Voltage

Figure 3. Normalized On- Resistance

-75 -50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID= 4.6 A

VGS= 10 V

NORMALIZED

DRAINTOSOURCEON-RESISTANCE

TJ, JUNCTION TEMPERATURE (oC)

vs Juncti on TemperatureFigure 4.

4 5 6 7 8 9 100

50

100

150

200

ID = 4.6 A

TJ = 25oC

TJ = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

rDS(on),

DRAINTO

SOURCEON-RESISTANCE(m

) PULSE DURATION = 80 s


On-Resistance vs Gate toSource Voltage

Figure 5. Transfer Characteristics

2 3 4 5 60

5

10

15

20

VDS= 5 V



TJ= -55oC

TJ= 25oC

TJ = 150oC

ID,

DRAINCURRENT(A)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.20.001

0.01

0.1

1

1020

TJ= -55oC

TJ= 25oC

TJ = 150oC

VGS= 0 V

IS,

REVERSEDRAINCURRENT(A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain DiodeForward Voltage vs Source Current


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FDMC86240N-C

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FDMC86240 Rev.C

Figure 7.

0 2 4 6 8 10 120

2

4

6

8

10

ID = 4.6 A

VDD= 75 VVDD= 50 V

VGS,

GATETOSOURCE

VOLTAGE(V)

Qg, GATE CHARGE(nC)

VDD= 100 V

Gate Charge Characteristics Figure 8.

0.1 1 10 1001

10

100

1000

2000

f = 1 MHz

VGS= 0 V

CAPACITANCE

(pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drainto Source Voltage

Figure 9.

0.1 1 101

2

3

4

5

6

TJ = 100oC

TJ = 25oC

TJ = 125oC

tAV, TIME IN AVALANCHE(ms)

IAS,

AVALANCHECURRENT(A)

Unclamped Induct iveSwitching Capability Figure 10.

25 50 75 100 125 1500

5

10

15

20

Limited by Package

VGS= 6 V

RJC = 3.1 oC/W

VGS= 10 V

ID,

DRAINCURRENT(A)

TC, CASE TEMPERATURE (

oC)

Maximum Continuous DrainCurrent vs Case Temperature

Figure 11.

0.1 1 10 100 5000.005

0.01

0.1

1

10

30

100 us

DC

10 s

1 s

100 ms

10 ms

1 ms

ID,

DRAINCURRENT(A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ= MAX RATED

RJA= 125 oC/WTA= 25

oC

Forward Bias SafeOperating Area

Figure 12.

10-4

10-3

10-2

10-1

1 10 100 10000.5

1

10

100

1000

2000

VGS

= 10 V

P(PK),

PEAKTRANSIENTPOWER(W)

SINGLE PULSE

RJA= 125 oC/WTA

= 25oC

t, PULSE WIDTH (sec)

Single Pulse MaximumPower Dissipation



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FDMC86240N-C

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FDMC86240 Rev.C

Figure 13. Transient Thermal Response Curve

10-4

10-3

10-2

10-1

1 10 100 10000.0005

0.001

0.01

0.1

1

SINGLE PULSE

RJA= 125oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZEDTHERMAL

IMPEDANCE,Z

JA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05 0.02

0.01

2

PDM

t1

t2

NOTES:DUTY FACTOR: D = t1/t2PEAK TJ= PDMx ZJAx RJA+ TA



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hannelPowerTrench

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FDMC86240 Rev.C

Dimensional Outline and Pad Layout


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www.fairchildsemi.com

FDMC86240N-C

hannelPowerTrench

MO

SFET

FDMC86240 Rev.C

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intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THEEXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,and (c) whose failure to perform when properly used in accordance withinstructions for use provided in the labeling, can be reasonablyexpected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to causethe failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPowerAuto-SPMBuild it NowCorePLUSCorePOWERCROSSVOLTCTLCurrent Transfer LogicDEUXPEED

Dual CoolEcoSPARK

EfficentMaxESBC

Fairchild

Fairchild Semiconductor

FACT Quiet SeriesFACT

FASTFastvCoreFETBenchFlashWriter *FPS

F-PFSFRFET

Global Power ResourceSM

Green FPSGreen FPS e-SeriesGmaxGTOIntelliMAXISOPLANARMegaBuckMICROCOUPLERMicroFETMicroPakMicroPak2MillerDriveMotionMaxMotion-SPMOptiHiTOPTOLOGIC

OPTOPLANAR

PDP SPM

Power-SPMPowerTrench

PowerXSProgrammable Active DroopQFET

QSQuiet SeriesRapidConfigure

Saving our world, 1mW/W/kW at a timeSignalWiseSmartMaxSMART STARTSPM

STEALTHSuperFETSuperSOT-3SuperSOT-6

SuperSOT-8SupreMOSSyncFETSync-Lock

*

The Power Franchise

TinyBoostTinyBuckTinyCalcTinyLogic

TINYOPTOTinyPowerTinyPWMTinyWireTriFault DetectTRUECURRENT*SerDes

UHC

Ultra FRFETUniFETVCXVisualMaxXS

Datasheet Identification Product Status Definition

Advance Information Formative / In DesignDatasheet contains the design specifications for product development. Specificationsmay change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a laterdate. Fairchild Semiconductor reserves the right to make changes at any time withoutnotice to improve design.

No Identif ication Needed Full ProductionDatasheet contains final specifications. Fairchild Semiconductor reserves the r ight tomake changes at any time without notice to improve the design.

Obsolete Not In ProductionDatasheet contains specifications on a product that is discontinued by FairchildSemiconductor. The datasheet is for reference information only.

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Rev. I48

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FDMC86240 datasheet