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Introduction - Chapter 1 Evolution of IC Fabrication Evolution of IC Fabrication 1960 d 1990 i t td i it 1960 and 1990 integrated circuits. • Progress due to: Feature size reduction - 0.7X/3 years (Moore’s Law). Increasing chip size - 16% per year. “Creativity” in implementing functions. SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin © 2000 by Prentice Hall Upper Saddle River NJ 3

Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

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Page 1: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Introduction - Chapter 1

Evolution of IC FabricationEvolution of IC Fabrication

1960 d 1990 i t t d i it• 1960 and 1990 integrated circuits.• Progress due to: Feature size reduction - 0.7X/3 years (Moore’s Law).

Increasing chip size - ≈ 16% per year.“Creativity” in implementing functions.

SILICON VLSI TECHNOLOGYFundamentals, Practice and ModelingBy Plummer, Deal & Griffin

© 2000 by Prentice HallUpper Saddle River NJ

3

y p g

Page 2: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Introduction - Chapter 1

Semiconductor Progress

• Decreasing: feature size (line widths line spacing• Decreasing: feature size (line widths, line spacing, layer depth, layer-to-layer tolerances), power per active component, operating voltage

• Increasing: chip size, wafer size, circuit density, circuit complexity speed and reliabilitycircuit complexity, speed, and reliability

• Economics: virtuous economic and developmentEconomics: virtuous economic and development cycle

SILICON VLSI TECHNOLOGYFundamentals, Practice and ModelingBy Plummer, Deal & Griffin

© 2000 by Prentice HallUpper Saddle River NJ

4

Page 3: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Introduction - Chapter 1

Device Scaling Over Time100µm

Feature Size

Cell dimensions10µmEra of Simple Scaling

1µm

0.1µm130 nm in 2002

Scaling + Innovation(ITRS)

Atomic dimensions

10nm Transition Region18 nm in 2018

Invention

Atomic dimensions

0.1nm

1nm Quantum Effects Dominate

Atomic Dimensions

• The era of “easy” scaling is over. We are now in a period wheretechnology and device innovations are required. Beyond 2020, new

1960 1980 2000 2020 2040 Year

SILICON VLSI TECHNOLOGYFundamentals, Practice and ModelingBy Plummer, Deal & Griffin

© 2000 by Prentice HallUpper Saddle River NJ

5

currently unknown inventions will be required.

Page 4: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Introduction - Chapter 1

Year of Production 1998 2000 2002 2004 2007 2010 2013 2016 2018

Technology Node (half pitch) 250 nm 180 nm 130 nm 90 nm 65 nm 45 nm 32 nm 22 nm 18 nm

MPU Printed Gate Length 100 nm 70 nm 53 nm 35 nm 25 nm 18 nm 13 nm 10 nm

DRAM Bits/Chip (Sampling) 256M 512M 1G 4G 16G 32G 64G 128G 128G

MPU Transistors/Chip (x106) 550 1100 2200 4400 8800 14,000

Min Supply Voltage (volts) 1.8-2.5 1.5-1.8 1.2-1.5 0.9-1.2 0.8-1.1 0.7-1-0 06-0.9 0.5-0.8 0.5-0.7 Min Supply Voltage (volts) 1.8 2.5 1.5 1.8 1.2 1.5 0.9 1.2 0.8 1.1 0.7 1 0 06 0.9 0.5 0.8 0.5 0.7

ITRS at http://public.itrs.net/ (2003 version + 2004 update) – on class website.• Assumes CMOS technology dominates over entire roadmap.gy p• 2 year cycle moving to 3 years (scaling + innovation now required).

• 1990 IBM demo of Å scale “lithography”.• Technology appears to be capable of making structures much smaller than

SILICON VLSI TECHNOLOGYFundamentals, Practice and ModelingBy Plummer, Deal & Griffin

© 2000 by Prentice HallUpper Saddle River NJ

6

currently known device limits.

Page 5: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Introduction - Chapter 1

Linewidth vs. Fab Cost

100000 10

10000

100000) 1

10

)

Fab Cost ($M)

Linewidth (nm)

100

1000

Fab

Cos

t ($M

)

0 1

1

Line

wid

th (u

m)

1

10

0.01

0.1

100mm 150mm 200mm 300mm 450mm11975 1980 1985 1990 1995 2000 2005 2010 2015 2020 2025

0.01

Advantages and Challenges Associated with the Introduction of 450mm Wafers :A position paper report submitted by the ITRS Starting Materials Sub-TWG, June 2005.

SILICON VLSI TECHNOLOGYFundamentals, Practice and ModelingBy Plummer, Deal & Griffin

© 2000 by Prentice HallUpper Saddle River NJ

8

y g ,http://public.itrs.net/papers.html

Page 6: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Introduction - Chapter 1

Moore’s LawOn April 19, 1965 Electronics Magazine published a paper by Gordon Moore in which he made a prediction about the

i d i d h h b h ff f l dsemiconductor industry that has become the stuff of legend.

“The number of transistors incorporated in a chipwill approximately double every 24 months.”pp y y

Known as Moore's Law, his prediction has enabled widespread proliferation of technology worldwide, and today h b h th d f id t h l i l hhas become shorthand for rapid technological change.

SILICON VLSI TECHNOLOGYFundamentals, Practice and ModelingBy Plummer, Deal & Griffin

© 2000 by Prentice HallUpper Saddle River NJ

9

http://www.intel.com/pressroom/kits/events/moores_law_40th/index.htm?iid=tech_mooreslaw+body_presskit

Page 7: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Introduction - Chapter 1

Historical Perspective

• Invention of the bipolar transistor - 1947, Bell Labs.

• Shockley’s “creative failure” methodology

N

P

N

P

N N

• Grown junction transistor technology of the 1950s

N

P N NP

SILICON VLSI TECHNOLOGYFundamentals, Practice and ModelingBy Plummer, Deal & Griffin

© 2000 by Prentice HallUpper Saddle River NJ

10

N

Page 8: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Introduction - Chapter 1

HistoryHistory• Bardeen, Brattain and Shockley

– Point Contact Transistor in 1947 at Bell Laboratory– Followed by the bipolar transistor

• Integrated Circuit DevelopmentIntegrated Circuit Development– Jack Kilby demonstrated in 1958

• Texas InstrumentsRobert Noyce similar time frame with Silicon– Robert Noyce similar time frame with Silicon

• Fairchild Semiconductor

SILICON VLSI TECHNOLOGYFundamentals, Practice and ModelingBy Plummer, Deal & Griffin

© 2000 by Prentice HallUpper Saddle River NJ

11

Page 9: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Introduction - Chapter 1

SILICON VLSI TECHNOLOGYFundamentals, Practice and ModelingBy Plummer, Deal & Griffin

© 2000 by Prentice HallUpper Saddle River NJ

19

Silicon Technology Leadership and the New Scaling ParadigmMark Bohr, Intel Senior Fellow, Logic Technology DevelopmentApril 18, 2007

Page 10: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

MICROCHIP MANUFACTURING by S. Wolf

Chapter 1:

THE SEMICONDUCTORINDUSTRY

© 2004 by LATTICE PRESS

Page 11: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Chapter 1: The Semiconductor Industry

n WORLDWIDEELECTRONICSINDUSTRY IN 2002

© 2004 by LATTICE PRESSSunset Beach CAMICROCHIP MANUFACTURING 1-2

Page 12: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Chapter 1: The Semiconductor Industry

n ElectronicsManufacturingFacilities

© 2004 LATTICE PRESSSunset Beach CA

MICROCHIP MANUFACTURING 1-3

Page 13: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Chapter 1: The Semiconductor Industryn Integrated Circuit Manufacturing Overview

© 2004 by LATTICE PRESSSunset Beach CA

MICROCHIP MANUFACTURING 1-4

Page 14: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Chapter 1: The Semiconductor Industry

n The Components of the Semiconductor Industry

© 2004 by LATTICE PRESSSunset Beach CA MICROCHIP MANUFACTURING 1-5

Page 15: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Chapter 1: The Semiconductor Industry

n Vacuum Tubes andthe Dawning of theAge of Electronics

© 2004 by LATTICE PRESSSunset Beach CAMICROCHIP MANUFACTURING 1-6

Page 16: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Chapter 1: The Semiconductor Industryn The TRANSISTOR:

The Age of Solid-StateElectronics

n Brattain, Bardeen, &Shockley (1947, ATT BellLabs - Bipolar Transistor)

© 2004 by LATTICE PRESSMICROCHIP MANUFACTURING 1-7

Page 17: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Chapter 1: The Semiconductor Industry

n The Age of Integrated Circuits

© 2004 by LATTICE PRESSSunset Beach CAMICROCHIP MANUFACTURING

The Inventors of the the Integrated Circuit (1961)Robert Noyce (Fairchild) Jack Kilby (TI)

1-8

Page 18: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Chapter 1: The Semiconductor Industryn The Growth of the

Semiconductor Industry

© 2004 by LATTICE PRESSSunset Beach CAMICROCHIP MANUFACTURING

“Moore’s (Scaling) Law”Moore predicted that there will bea feature-size reduction on ICs of0.7X, every 3 years.Thus, the number of devices perchip should double every 3-years.

Scaling the MOSFET

1-9

Page 19: Evolution of IC FabricationEvolution of IC Fabricationzyang/Teaching/20182019FallECE... · Introduction - Chapter 1 Evolution of IC FabricationEvolution of IC Fabrication • 1960

Chapter 1: The Semiconductor Industry

n Summary of Key Concepts– Integrated Circuits (ICs) are the basis of the

21st-Century $1-Trillion Electronics Industry– Basic inventions between 1945 and 1970 laid

the foundation for today’s silicon IC industry– For more than 30 years, “Moore’s Law” (a

doubling of chip-complexity every 2-3 years)has held true

– Future projections suggest that these trendswill continue at least to 2010 -and likely beyond!

© 2004 by LATTICE PRESSSunset Beach CAMICROCHIP MANUFACTURING 1-10