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EUVL Scanners Operational at Chipmakers
Skip Miller
Semicon West 2011
Public -Semicon West 2011 2
Outline
• ASML’s Lithography roadmap to support Moore’s Law
• Progress on NXE:3100 (0.25NA) EUV systems
• Progress on NXE:3300 (0.33NA) EUV systems
• Summary
Public -Semicon West 2011 3
AR
Fi
EU
V
Re
so
luti
on
/ha
lf p
itc
h, "S
hri
nk
" [n
m]
8
20
30
40
5060
80
200
10
100
02 03 04 05 06 07 08 09 11 12 13 14 15 16 17 18 19 10 20
Year of production start*
* Note: Process development 1.5 ~ 2 years in advance updated 2/11
AR
F
Lithography supports shrink roadmap
Industry roadmap towards < 10 nm resolution
Logic
Logic
Logic / SRAM
6 Transistor SRAM Cell
k1 0.40 ~ 0.44
XT:1400
XT:1700i
AT:1200
XT:1900i
NXT:1950i
NXE:3100
NXE:3300
k1 0.30 ~ 0.35
DRAM
DRAM
DRAM
NAND
NAND Flash
k1 0.27 ~ 0.30
NAND
Public -Semicon West 2011 4
Litho costs back to normal with EUV >100 W/hrLitho c
ost per
wafe
r [a
.u.]
Source: Samsung, Prague, oct 2009
3.5
3
2.5
2
1.5
1
0KrF set 1400 set 1900i set 1900i DPT 1900i DPT EUV
100W/hrEUV
180W/hr
0.5
DPT case, Litho costincreases 2 ~ 3 times
EUV case, Litho costtrend returns
1st Gen.DPT
2st Gen.DPT
Public -Semicon West 2011 5
2 Alpha-demo tools used by multiple customers since 2006
λ 13.5 nm NA 0.25Field size 26 x 33 mm2
Magnification 4x reductionSigma 0.5
• 300mm Single stage• linked to track• Single reticle load• Uses TWINSCAN technology• Sn discharge source
Public -Semicon West 2011 6
ASML EUV Product Roadmap and Technology Status
2006 2011 2012 2013
Proto System NXE:3100 NXE:3300B NXE:3300C
Resolution 32 nm 27 nm 22 nm 18/16* nm
NA / σ 0.25 / 0.5 0.25 / 0.8 0.33 / 0.2-0.9 0.33 / OAI
Overlay (DCO/MMO)
< 7 nm < 4/7 nm < 3/5 nm < 2.5/4.5 nm
Throughput W/hr 4 W/hr 60 W/hr 125 W/hr 150 W/hr
Dose, Source 5 mJ/cm2, ~8 W 10 mJ/cm2, >100 W 15 mJ/cm2, >250 W 15 mJ/cm2, >350 W
Main improvements
1) New EUV platform: NXE
2) Improved low flare optics
3) New high sigma illuminator
4) New high power source
5) Dual stages
Main improvements
1) New high NA 6 mirror lens
2) New high efficiency illuminator
3) Off-axis illumination optional
4) Source power increase
5) Reduced footprint
* Requires <7 nm resist diffusion length
Platform enhancements
1) Off-Axis illumination
2) Source power increase
• Imaging 22nm demonstrated• Overlay <4/7nm shown• Productivity improvement
plan in place to achieve 60W/hr
• Building of frames and optics has started
NXE:3300 numerical aperture increased to 0.33
Public -Semicon West 2011 7
Outline
• ASML’s Lithography roadmap to support Moore’s Law
• Progress on NXE:3100 (0.25NA) EUV systems
• Progress on NXE: 3300 (0.33NA) EUV systems
• Summary
Public -Semicon West 2011 8Slide 8 |
2011: EUV is moving ahead
• NXE:3100 is
•Exposing wafers at customer 1
•Exposed wafers at customer 2
•Exposing wafers at customer 3
•Under installation at customer 4
•Shipping to customer 5
•In setup for shipment to customer 6
NXE:3100 targets:
• Imaging
• Resolution 27nm
• NA=0.25
• σ=0.8
• Overlay
• DCO=4.0 nm
• MMO=7.0 nm
• Productivity
• 60wph
• 10mJ/cm2 resist
Public -Semicon West 2011 9
Focus and dynamics performance support good imaging performance
6.01.12MA-Z [nm]
0.600.24MA-Y [nm]
3.22.91MSD-X [nm]
0.600.32MA-X [nm]
3.21.53MSD-Y [nm]
6.9
Measured
21MSD-Z [nm]
Target
System dynamics qualified at 60 W/hr conditions
Same wafer metrology will be used in NXE:3300
Focus Uniformity 22.3nm
Public -Semicon West 2011 10
6xEo 7xEo 8xEo 9xEo 10xEo 11xEo 12xEo 13xEo 14xEo 15xEo 16xEo 17xEo 18xEo 19xEo
EUV ADT
NXE 3100
NXE:3100 flare measurement in resist confirms optical measurements of <5%
• Methodology:
• Dose to clear resist in open frame: Eo
• Dose to disappear the pattern Edtd
• Flare = Eo/Edtd- mask
flare
Edtd
Public -Semicon West 2011 11
Large process windows for 22nm
NA=0.25, 75deg dipole,
Resist dose ~15mJ/cm2
SEVR140 SB/PEB : 105°C/95°C17
22
27
-0.2 -0.1 0.0 0.1 0.2
Focus Offset (mm)
CD
(n
m)
14.5mJ
16.00mJ
13.00mJ
CD
(n
m)
22nm DoF ~200nm, EL ~12%
21p42 20p40 19p38 18p36
dipole-60, inorganic negative tone resist
in collaboration with IMEC
Resolution extension to 18nm on NXE:3100
Public -Semicon West 2011 12
18nm Flash staggered contact layer well resolved
Bitline pitch = 40nm
CH pitch = 72nm
Bitline pitch = 36nm
CH pitch = 65nm
20nm node Flash CHs – 1.5x2f18nm node Flash CHs – 1.5x3f
50nm SPUR-V002 on 20nm UL, TBAH develop + FIRM Extreme rinseDose = 20.0 mJ/cm2
18nm HP
Public -Semicon West 2011 13
CDU full wafer and intrafield performance
Process - 50nm SPUR-V002 : Developer – TMAH +DIW Rinse : Dose 12mJ/cm²
Mean CD = 26.73 σ = 1.0nm
Mean CD = 26.093 σ = 1.5nm
Full wafer Intrafield
Public -Semicon West 2011 14
Improved Alignment Repro in Vacuum
XT
Alignment repro
(1.1nm, 0.8nm)
NXT
Alignment repro
(0.6nm, 0.6nm)
NXE
Alignment repro
(0.5nm, 0.4nm)
Interferometers in vacuumInterferometers in air Grid plate
Public -Semicon West 2011 15
Dedicated chuck Overlay <4nmChampion data <2nm
10 nm
99.7%Fx: 1.8 nmy: 1.8 nm
Single Chuck Overlay, 2 wafe, ATP filtered
10 nm
99.7%Fx: 1.8 nmy: 3.7 nm
Single Chuck Overlay, 2 wafe, ATP filtered
(x:1.8,y:1.8) (x:1.8,y:3.7)
2 wafer lot after standard system calibration, 44 fields, 99.7%
Public -Semicon West 2011 16
EUV-to-ArF Overlay measured at 6.5 nm
15 nm
99.7%Fx: 6.5 nmy: 5.9 nm
4 wafers: (x:6.5,y:5.9)
Matched Machine: EUV to ArF
ArF: XT:1450, Standard system calibration, 44 fields, 99.7%
Public -Semicon West 2011 17
2 EUV source concepts integrated and exposingCriticality of source supply requires ASML to seek multiple suppliers
Laser-Produced Plasma (LPP)
• CO2 laser ignites tin plasma
• Debris mitigation by background gas and
possible magnetic field (Komatsu)
Laser Assisted Discharge (LDP)
• High voltage ignites tin plasma
• Debris mitigation by rotating foil trap
Grazing
collector
Foil
trap
Sn coated/cooled
Rotating disc
plasma
Suppliers Cymer, Gigaphoton Supplier: XTREME (Ushio)
Public -Semicon West 2011 18
Light source suppliers progressing toward NXE:3100 throughput target of 60 wafers per hour
• Removed picture for handout • Removed picture for handout
Public -Semicon West 2011 19
Source power progress 10x per yearhowever final leap to 100 W equivalent with 60 W/hr still a challenge
Timeline
0.1
1
10
100
1000
Q1/2009 Q1/2010 Q1/2011 end/2012end/2011
~105W
60wph
10mJ/cm2
So
urc
e p
ow
er
[W]
Public -Semicon West 2011 20
Outline
• ASML’s Lithography roadmap to support Moore’s Law
• Progress on NXE:3100 (0.25NA) EUV systems
• Progress on NXE: 3300 (0.33NA) EUV systems
• Outlook
Public -Semicon West 2011 21
NXE:3300 – building on the 3100
• NXE:3300 is a continuation of the 3100 platform, with a changed optical column and reduced footprint to enable
• Improved resolution (0.33NA), capability for off-axis illumination without energy loss, higher productivity at higher dose.
• Improved cost of ownership
• Stages, handlers, software, sensors will be taken over as much as possible from 3100 for 3300
0.33NA
125 wph@ 15 mJ/cm2Throughput
3.0 / 5.0 nmOverlay (DCO / MMO)
22 nm (18 nm with OAI)
Resolution (half-pitch)
NXE:3300BSystem performance
Public -Semicon West 2011 22
System Transmission significantly improved
Proto NXE:3100 NXE:3300
Measurement
Design
Tra
ns
mis
sio
n [
a.u
.]
1.0
2.0
3.0
0.0
higher sigmapolishingcoatings
steeper anglesnew layoutpolishingcoatings
Steeper angles
Design sketches
Proto NXE:3100 NXE:3300
Measurement
Design
Measurement
Design
Tra
ns
mis
sio
n [
a.u
.]
1.0
2.0
3.0
0.0
higher sigmapolishingcoatings
steeper anglesnew layoutpolishingcoatings
Steeper angles
Design sketches
- Flexible Off-Axis illumination
- Six mirror lens extension from NXE:3100
Public -Semicon West 2011 23
Further resolution extension with off-axis illuminationDipole illumination extends resolution below 16 nm
NAkCD
λ⋅=
1
Ima
ge
co
ntr
as
t (N
ILS
)
0.5
1.0
1.5
2.0
2.5
3.0
k1
32282422 201816 1311
0.760.660.570.520.470.430.380.310.26
hp [nm]
Dipole
Quasar
Conventional
Annular
NXE:3300 NA=0.33
Public -Semicon West 2011 24
Main frames for NXE:3300 are in productionFirst frames delivered to ASML
Pre milling MID support frame ongoing
Milling WS metroframe ongoing
Removed pictures for handout
Public -Semicon West 2011 25
Mid cluster•Delivered to ASML
Pre-qual. optics: enables early integration of (dynamics) functionality prior to sharp optics delivery
Pre-qual. illuminator
Bottom-frame
Reticle Handler
Mid-frame
Top cluster• RS and RH integrated• RS Dynamics qualified at 60 wph• RS Functional testing ongoing towards 100wph
Bottom cluster • Bottom-frame in milling phase • Delivered to ASML July’11• WS, WH delivery July’‘11
NXE:3300 Hardware realization towards integration phase
Removed pictures for handout
Public -Semicon West 2011 26
NXE:3300 – material for 12 optics sets in production loop – now >40 lens mirrors in optical polishing
courtesy of Zeiss SMT AG
Removed picture for handout
Public -Semicon West 2011 27courtesy of Zeiss SMT AG
NXE:3300 –first mirrors in flare specification
First result on 3300 mirror verify the 6% flare specification and show potential down to 4% (below a 2µm line)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
Dez 03 Dez 04 Dez 05 Dez 06 Dez 07 Dez 08 Dez 09 Dez 10 Dez 11
ADT
3100
3300
2004 2005 2006 2007 2008 2009 2010 2011
MS
FR
[nm
rm
s]
[year]
Removed picture for handout
Public -Semicon West 2011 28
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30 35 40
Dose [mJ/cm2]
Th
rou
gh
pu
t [w
ph
]
3100A
33x0
B
Proto status5wph @ 5mJ/cm2
> 105 W
> 350 W
> 500 W
Productivity roadmap supported by all three source suppliers
> 250 W
C
D
NXE:3100/A
NXE:3300/B
Source Power, Resist Sensitivity, Transmission, StagesAll need to increase over time to meet user cost targets
>50% transmission increase
NXE:3300/C
NXE:3300/D
Public -Semicon West 2011 29
Existing EUV offices & manufacturing, 8 cabins.
New EUV offices & manufacturing,15 cabins.
New EUV facilities planned to be available end 2011 NXE production capacity increases ~3x
Public -Semicon West 2011 30
Outline
• ASML’s Lithography roadmap to support Moore’s Law
• Progress on NXE:3100 (0.25NA) EUV systems
• Progress on NXE: 3300 (0.33NA) EUV systems
• Summary
Public -Semicon West 2011 31
EUV is moving forward
● ASML has 4+ years of accumulated EUV field experience with 1st
generation EUV tools at research institutes in Belgium and the US
● 2nd generation EUV NXE:3100 system shipments in progress, 4 systems shipped, 3 running wafers at customer production site, 1under installation, 1 shipping, 1 remaining system to ship.
● 3th generation EUV tool NXE:3300 in development, module manufacturing in progress, capable of printing features down to 16 nm in volume manufacturing
● ASML has customer commitments for 10 NXE:3300 systems to be delivered starting in 2012
● Productivity roadmap remains major challenge although major progress continues to be made with 3 source suppliers
● To meet future EUV demand, construction on the new EUV factory extension has started