Electrodynamic Certificate t7

8/2/2019 Electrodynamic Certificate t7

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BIJU PATNAIK UNIVERSITY OF TECHNOLOGY

ROURKELA

ORISSA

A Seminar Report on

NANO GENERATOR

Submitted by

TAPAS RANJAN PRADHAN

Regd. No.-0921294013

Under the Guidance of

Prof. D.K SAHOO

DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

RAAJDHANI ENGINEERING COLLEGE

BHUBANESWAR-751017

ORISSA

2011


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BIJU PATNAIK UNIVERSITY OF TECHNOLOGY

ROURKELA

ORISSA

RAAJDHANI ENGINEERING COLLEGE

BHUBANESWAR-751017

ORISSA.

CERTIFICATECertified that the seminar report entitled Nano Generatoris a bonafied work carried out

by Tapas Ranjan Pradhan, Reg.No-0921294013,in partial fulfillment for the award ofBachelor

in Technology in Electrical & Electronics Engineering prescribed by Biju Patnaik

University of Technology, Rourkela during 2011-12. It is also certified that all the

corrections/suggestions indicated for the seminar have been incorporated in the report. This

seminar report has been approved as it satisfies the academic requirements in respect of the

Seminar prescribed for the 7th Semester ofBachelor in Technology.

Seminar Guide Seminar In-Charge H.O.D(Prof.D. K. Sahoo ) (Prof. J. R. Nayak) (Prof.D. K. Sahoo)

Head, Department of E.E.E Department of E.E.E . Head, Department of E.E.E

REC, Bhubaneswar. REC, Bhubaneswar. REC, Bhubaneswar.


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ACKNOWLEDGEMENT

The acts of few specific people are influence of many. Determination andinspiration in many minds are the reflection of these people.

I am greatly thankful to our respected and beloved Principal Prof(Dr.)

Bimal Sarangi and our Head of the Department Prof. D.K.Sahoo who are the

backbone for the success of this seminar.

My sincere thanks to the Seminar Guide Prof. D.K Sahoo for his

guidance and suggestions which helped in overcoming the hurdles in the

completion of this seminar report.

My sincere thanks to all the staff members of our department for their

immense support during the seminar work.

I also thank the non-teaching staff members of Electrical and

Electronics Engineering Department for their kind support and help in carrying out

the seminar work.

And last but not the least, I also thank my parents and friends for their

co-operation and encouragement in successfully completing the seminar work.

Signature of the student


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SYNOPSIS


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CONTENTS

1:Introduction 2:Geometrical Configuration

o 2.1: Vertical nanowire Integrated Nanogenerator(VING)

o 2.2: Lateral nanowire Integrated Nanogenerator(LING)

o 2.3: Nanocomposite Electrical Generators (NEG)o 2.4: Other type

3: Materials 4: Applications

o 4.1: Self-powered nano/micro deviceso 4.2: Smart Wearable Systemso 4.3: Transparent and Flexible Deviceso 4.4: Implantable Telemetric Energy Receiver
http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29http://en.wikipedia.org/wiki/Nanogenerator#Nanocomposite_Electrical_Generators_.28NEG.29http://en.wikipedia.org/wiki/Nanogenerator#Nanocomposite_Electrical_Generators_.28NEG.29http://en.wikipedia.org/wiki/Nanogenerator#Other_typehttp://en.wikipedia.org/wiki/Nanogenerator#Other_typehttp://en.wikipedia.org/wiki/Nanogenerator#Materialshttp://en.wikipedia.org/wiki/Nanogenerator#Materialshttp://en.wikipedia.org/wiki/Nanogenerator#Applicationshttp://en.wikipedia.org/wiki/Nanogenerator#Applicationshttp://en.wikipedia.org/wiki/Nanogenerator#Self-powered_nano.2Fmicro_deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Self-powered_nano.2Fmicro_deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Smart_Wearable_Systemshttp://en.wikipedia.org/wiki/Nanogenerator#Smart_Wearable_Systemshttp://en.wikipedia.org/wiki/Nanogenerator#Transparent_and_Flexible_Deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Transparent_and_Flexible_Deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Implantable_Telemetric_Energy_Receiverhttp://en.wikipedia.org/wiki/Nanogenerator#Implantable_Telemetric_Energy_Receiverhttp://en.wikipedia.org/wiki/Nanogenerator#Implantable_Telemetric_Energy_Receiverhttp://en.wikipedia.org/wiki/Nanogenerator#Transparent_and_Flexible_Deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Smart_Wearable_Systemshttp://en.wikipedia.org/wiki/Nanogenerator#Self-powered_nano.2Fmicro_deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Applicationshttp://en.wikipedia.org/wiki/Nanogenerator#Materialshttp://en.wikipedia.org/wiki/Nanogenerator#Other_typehttp://en.wikipedia.org/wiki/Nanogenerator#Nanocomposite_Electrical_Generators_.28NEG.29http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29


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Introduction:-

Working principle of nanogenerator where an individual nanowire is

subjected to the force exerted perpendicular to the growing direction

of nanowire. (a) An AFT tip is swept through the tip of the nanowire.

Only negatively charged portion will allow the current to flow

through the interface. (b) The nanowire is integrated with the counter

electrode with AFT tip-like grating. As of (a), the electrons are

transported from the compressed portion of nanowire to the counter

electrode because of Schottky contact.
http://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.png


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Working principle of nanogenerator where an individual nanowire issubjected to the force exerted parallel to the growing direction of

nanowire

The working principle of nanogenerator will be explained for 2different cases: the force exerted perpendicular and parallel to the axisof the nanowire.

The working principle for the first case is explained by a verticallygrownnanowiresubjected to the laterally moving tip. When a

piezoelectricstructure is subjected to the external force by the moving

tip, the deformation occurs throughout the structure. Thepiezoelectric

effectwill create theelectrical fieldinside thenanostructure; the

stretched part with the positive strain will exhibit the positive

electrical potential, whereas the compressed part with the negativestrain will show the negative electrical potential. This is due to the

relative displacement ofcationswith respect toanionsin its

crystalline structure. As a result, the tip of the nanowire will have an

electrical potential distribution on its surface, while the bottom of the

nanowire is neutralized since it is grounded. The maximum voltage

generated in the nanowire can be calculated by the following

equation[2]

:

, where 0is the permittivity in vacuum, is the dielectric constant,

e33, e15 and e31are the piezoelectric coefficients, is the Poisson ratio,

a is the radius of the nanowire, l is the length of the nanowire and max

is the maximum deflection of the nanowire's tip.

The electrical contact plays an important role to pump out charges inthe surface of the tip. Theschottky contactmust be formed between

the counter electrode and the tip of the nanowire since the ohmic

contact will neutralize the electrical field generated at the tip. In orderto form an effectiveschottky contact, theelectron affinity(Ea) must be

smaller than thework function() of the metal composing the counter

electrode. For the case ofZnOnanowirewith theelectron affinityof

4.5 eV,Pt(=6.1eV) is a suitable metal to construct theschottky

contact. By constructing theschottky contact, the electrons will pass
http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Electrical_fieldhttp://en.wikipedia.org/wiki/Electrical_fieldhttp://en.wikipedia.org/wiki/Electrical_fieldhttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Cationshttp://en.wikipedia.org/wiki/Cationshttp://en.wikipedia.org/wiki/Cationshttp://en.wikipedia.org/wiki/Anionshttp://en.wikipedia.org/wiki/Anionshttp://en.wikipedia.org/wiki/Anionshttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-1http://en.wikipedia.org/wiki/Nanogenerator#cite_note-1http://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Work_functionhttp://en.wikipedia.org/wiki/Work_functionhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Pthttp://en.wikipedia.org/wiki/Pthttp://en.wikipedia.org/wiki/Pthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Pthttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Work_functionhttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-1http://en.wikipedia.org/wiki/Anionshttp://en.wikipedia.org/wiki/Cationshttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Electrical_fieldhttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowire


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to the counter electrode from the surface of the tip when the counter

electrode is in contact with the regions of the negative potential,

whereas no current will be generated when it is in contact with the

regions of the positive potential, in the case ofn-type semiconductive

nanostructure(p-type semiconductivestructure will exhibit thereversed phenomenon since the hole is mobile in this case). The

formation of theschottky contactalso contributes to the generation of

direct current output signal consequently.

For the second case, a model with a vertically grown nanowirestacked between theohmic contactat its bottom and theschottky

contactat its top is considered. When the force is applied toward the

tip of the nanowire, the uniaxial compressive is generated in the

nanowire. Due to thepiezoelectric effect, the tip of thenanowirewillhave a negativepiezoelectricpotential, increasing theFermi levelat

the tip. Since the electrons will then flow from the tip to the bottom

through the external circuit as a result, the positive electrical potential

will be generated at the tip. Theschottky contactwill barricade the

electrons being transported through the interface, therefore

maintaining the potential at the tip. As the force is removed, the

piezoelectric effectdiminishes, and the electrons will be flowing back

to the top in order to neutralize the positive potential at the tip. The

second case will generate alternating current output signal.
http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/w/index.php?title=P-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/w/index.php?title=P-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Ohmic_contacthttp://en.wikipedia.org/wiki/Ohmic_contacthttp://en.wikipedia.org/wiki/Ohmic_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Fermi_levelhttp://en.wikipedia.org/wiki/Fermi_levelhttp://en.wikipedia.org/wiki/Fermi_levelhttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Fermi_levelhttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Ohmic_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/w/index.php?title=P-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1


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Geometrical Configuration:-

Depending on the configuration ofpiezoelectricnanostructure, the most

of the nanogenerator can be categorized into 3 types: VING, LING and

"NEG". Still, there is a configuration that do not fall into the

aforementioned categories, as stated in other type.

Vertical nanowire Integrated Nanogenerator (VING)

Schematic view of typical Vertical nanowire Integrated Nanogenerator,

(a) with full contact, and (b) with partial contact. Note that the grating

on the counter electrode is important in the latter case.

VING is a 3-dimensional configuration consisting of a stack of 3 layers

in general, which are the base electrode, the vertically grownpiezoelectricnanostructureand the counter electrode. Thepiezoelectric

nanostructureis usually grown from the base electrode by various

synthesizing techniques, which are then integrated with the counter

electrode in full or partial mechanical contact with its tip.
http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/File:NG_VING.pnghttp://en.wikipedia.org/wiki/File:NG_VING.pnghttp://en.wikipedia.org/wiki/File:NG_VING.pnghttp://en.wikipedia.org/wiki/File:NG_VING.pnghttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectric


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After Professor Zhong Lin Wang of the Georgia Institute of Technology

has introduced a basic configuration of VING in 2006 where he used a

tip of atomic force microscope (AFM) to induce the deformation of a

single verticalZnOnanowire, the first development of VING is followed

in 2007.[3]The first VING utilizes the counter electrode with theperiodic surface grating resembling the arrays of AFM tip as a moving

electrode. Since the counter electrode is not in full contact with the tips

of thepiezoelectricnanowire, its motion in-plane or out-of-plane

occurred by the external vibration induces the deformation of the

piezoelectricnanostructure, leading to the generation of the electrical

potential distribution inside each individualnanowire. It should be noted

that the counter electrode is coated with the metal forming theschottky

contactwith the tip of thenanowire, where only the compressed portionofpiezoelectricnanowirewould allow the accumulated electrons pass

through the barrier between its tip and the counter electrode, in case of

n-typenanowire. The switch-on andoff characteristic of this

configuration shows its capability of generating direct current generation

without any requirement for the externalrectifier.

In VING with partial contact, the geometry of the counter electrode

plays an important role. The flat counter electrode would not induce the

sufficient deformation of thepiezoelectricnanostructures, especiallywhen the counter electrode moves by in-plane mode. After the basic

geometry resembling the array ofAFMtips, a few other approaches

have been followed for facile development of the counter electrode.

Professor Zhong Lin Wangs group have generated counter electrode

composed of ZnO nanorods utilizing the similar technique used for

synthesizing ZnOnanowirearray. Professor Sang-Woo Kim's group of

Sungkyunkwan University(SKKU) and Dr. Jae-Young Choi's group of

Samsung Advanced Institute of Technology(SAIT) in South Koreaintroduced bowl-shaped transparent counter electrode by combining

anodized aluminumand theelectroplatingtechnology.[4]

They also have

developed the other type of the counter electrode by using networked

single-walled carbon-nanotube (SWNT) on the flexible substrate, which

is not only effective for energy conversion but also transparent.[5]
http://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-2http://en.wikipedia.org/wiki/Nanogenerator#cite_note-2http://en.wikipedia.org/wiki/Nanogenerator#cite_note-2http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Rectifierhttp://en.wikipedia.org/wiki/Rectifierhttp://en.wikipedia.org/wiki/Rectifierhttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Atomic_force_microscopyhttp://en.wikipedia.org/wiki/Atomic_force_microscopyhttp://en.wikipedia.org/wiki/Atomic_force_microscopyhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Sungkyunkwan_Universityhttp://en.wikipedia.org/wiki/Sungkyunkwan_Universityhttp://en.wikipedia.org/wiki/Samsung_Advanced_Institute_of_Technologyhttp://en.wikipedia.org/wiki/Samsung_Advanced_Institute_of_Technologyhttp://en.wikipedia.org/wiki/Anodized_aluminumhttp://en.wikipedia.org/wiki/Anodized_aluminumhttp://en.wikipedia.org/wiki/Electroplatinghttp://en.wikipedia.org/wiki/Electroplatinghttp://en.wikipedia.org/wiki/Electroplatinghttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-3http://en.wikipedia.org/wiki/Nanogenerator#cite_note-3http://en.wikipedia.org/wiki/Nanogenerator#cite_note-3http://en.wikipedia.org/wiki/SWNThttp://en.wikipedia.org/wiki/SWNThttp://en.wikipedia.org/wiki/SWNThttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/SWNThttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-3http://en.wikipedia.org/wiki/Electroplatinghttp://en.wikipedia.org/wiki/Anodized_aluminumhttp://en.wikipedia.org/wiki/Samsung_Advanced_Institute_of_Technologyhttp://en.wikipedia.org/wiki/Sungkyunkwan_Universityhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Atomic_force_microscopyhttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Rectifierhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-2http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/ZnO


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The other type of VING has been also suggested. While it shares the

identical geometric configuration with the aforementioned, such a VING

has full mechanical contact between the tips of thenanowiresand the

counter electrode.[6]

This configuration is effective for application where

the force is exerted in the vertical direction (toward the c axis of thepiezoelectricnanowire), and it generates alternating current (AC) unlike

VINGs with partial contact.

Lateral nanowire Integrated Nanogenerator (LING)

Schematic view of typical Lateral nanowire Integrated Nanogenerator

LING is a 2-dimensional configuration consisting of three parts: the

base electrode, the laterally grownpiezoelectricnanostructureand the

metal electrode for schottky contact. In most of cases, the thickness of

the substrate film is much thicker than the diameter of thepiezoelectric

nanostructure, so the individualnanostructureis subjected to the pure

tensile strain.

LING is an expansion of single wire generator (SWG), where a laterally

alignednanowireis integrated on the flexible substrate. SWG is rather a

scientific configuration used for verifying the capability of electrical

energy generation of apiezoelectricmaterial and is widely adopted in

the early stage of the development.
http://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-5http://en.wikipedia.org/wiki/Nanogenerator#cite_note-5http://en.wikipedia.org/wiki/Nanogenerator#cite_note-5http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/File:NG_LING.pnghttp://en.wikipedia.org/wiki/File:NG_LING.pnghttp://en.wikipedia.org/wiki/File:NG_LING.pnghttp://en.wikipedia.org/wiki/File:NG_LING.pnghttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-5http://en.wikipedia.org/wiki/Nanowire


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As of VINGs with full mechanical contact, LING generates AC

electrical signal. The output voltage can be amplified by constructing an

array of LING connected in series on the single substrate, leading the

constructive addition of the output voltage. Such a configuration may

lead to the practical application of LING for scavenging large-scalepower, for example, wind or ocean waves.

Nanocomposite Electrical Generators (NEG)

Schematic view of typical Nanocomposite Electrical Generator

"NEG" is a 3-dimensional configuration consisting three main parts: the

metal plate electrodes, the vertically grownpiezoelectricnanostructure

and the polymer matrix which fills in between in thepiezoelectric

nanostructure.

NEG was introduced by Momeni et al.[7]

It was shown that NEG has a

higher efficiency compared to original nanogenerator configuration

which a ZnO nanowire will be bended by an AFM tip. It is also shown

that it provides an energy source with higher sustainability.
http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-6http://en.wikipedia.org/wiki/Nanogenerator#cite_note-6http://en.wikipedia.org/wiki/Nanogenerator#cite_note-6http://en.wikipedia.org/wiki/File:NEG.pnghttp://en.wikipedia.org/wiki/File:NEG.pnghttp://en.wikipedia.org/wiki/File:NEG.pnghttp://en.wikipedia.org/wiki/File:NEG.pnghttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-6http://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectric


13/17

Other type

The fabric-like geometrical configuration has been suggested by

Professor Zhong Lin Wang in 2008. Thepiezoelectricnanowireis

grown vertically on the two microfibers in its radial direction, and theyare twined to form a nanogenerator.

[8]One of the microfibers is coated

with the metal to form a schottky contact, serving as the counter

electrode of VINGs. As the movable microfiber is stretched, the

deformation of thenanostructureoccurs on the stationary microfiber,

resulting in the voltage generation. Its working principle is identical to

VINGs with partial mechanical contact, thus generating DC electrical

signal.
http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-7http://en.wikipedia.org/wiki/Nanogenerator#cite_note-7http://en.wikipedia.org/wiki/Nanogenerator#cite_note-7http://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-7http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectric


14/17

Materials:-

Among variouspiezoelectricmaterials studied for the nanogenerator,

many of the researches have been focused on the materials withwurtzite

structuresuch asZnO,CdS[9]andGaN.[10]The greatest advantage of

theses material arises from the facile and cost-effective fabrication

technique,hydrothermal synthesis. Since thehydrothermal synthesiscan

be conducted in a low temperature environment under 100C in addition

to vertical and crystalline growth , these materials can be integrated in

various substrates with reduced concern for its physical characteristics

such as a melting temperature.

Endeavors for enhancing thepiezoelectricityof the individualnanowirealso led to the development of otherpiezoelectricmaterials based on

Wurtzite structure. Professor Zhong Lin Wang of Georgia Institute of

Technology introduced p-type ZnOnanowire.[11]

Unlike then-type

semiconductivenanostructure, the mobile particle in p-type is a hole,

thus the schottky behavior is reversed from that of n-type case; the

electrical signal is generated from the portion of thenanostructurewhere

the holes are accumulated. It is experimentally proved that p-type ZnO

nanowirecan generate the output signal near 10 times that of n-type

ZnOnanowire.

From the idea that the material withperovskite structureis known to

have more effectivepiezoelectriccharacteristic compared to that with

wurtzite structure,Barium titanate(BaTiO3)nanowirehas been also

studied by Professor Min-Feng Yu ofUniversity of Illinois at Urbana

Champaign.[12]

The output signal is found to be more than 16 time that

from a similarZnOnanowire.

Professor Liwei Lin ofUniversity of California at Berkeleyhas

suggested thatPVDFcan be also applied to form a nanogenerator.[13]

Being a polymer, PVDF utilizes a near-field electrospinning for its

fabrication, which is rather a different technique compared to other

materials. The nanofiber can be directly written on the substrate
http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/CdShttp://en.wikipedia.org/wiki/CdShttp://en.wikipedia.org/wiki/CdShttp://en.wikipedia.org/wiki/CdShttp://en.wikipedia.org/wiki/GaNhttp://en.wikipedia.org/wiki/GaNhttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-9http://en.wikipedia.org/wiki/Nanogenerator#cite_note-9http://en.wikipedia.org/wiki/Nanogenerator#cite_note-9http://en.wikipedia.org/wiki/Hydrothermal_synthesishttp://en.wikipedia.org/wiki/Hydrothermal_synthesishttp://en.wikipedia.org/wiki/Hydrothermal_synthesishttp://en.wikipedia.org/wiki/Hydrothermal_synthesishttp://en.wikipedia.org/wiki/Hydrothermal_synthesishttp://en.wikipedia.org/wiki/Hydrothermal_synthesishttp://en.wikipedia.org/wiki/Piezoelectricityhttp://en.wikipedia.org/wiki/Piezoelectricityhttp://en.wikipedia.org/wiki/Piezoelectricityhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-10http://en.wikipedia.org/wiki/Nanogenerator#cite_note-10http://en.wikipedia.org/wiki/Nanogenerator#cite_note-10http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Perovskite_structurehttp://en.wikipedia.org/wiki/Perovskite_structurehttp://en.wikipedia.org/wiki/Perovskite_structurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Barium_titanatehttp://en.wikipedia.org/wiki/Barium_titanatehttp://en.wikipedia.org/wiki/Barium_titanatehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/University_of_Illinois_at_Urbana_Champaignhttp://en.wikipedia.org/wiki/University_of_Illinois_at_Urbana_Champaignhttp://en.wikipedia.org/wiki/University_of_Illinois_at_Urbana_Champaignhttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-11http://en.wikipedia.org/wiki/Nanogenerator#cite_note-11http://en.wikipedia.org/wiki/Nanogenerator#cite_note-11http://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/University_of_California_at_Berkeleyhttp://en.wikipedia.org/wiki/University_of_California_at_Berkeleyhttp://en.wikipedia.org/wiki/University_of_California_at_Berkeleyhttp://en.wikipedia.org/wiki/PVDFhttp://en.wikipedia.org/wiki/PVDFhttp://en.wikipedia.org/wiki/PVDFhttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-12http://en.wikipedia.org/wiki/Nanogenerator#cite_note-12http://en.wikipedia.org/wiki/Nanogenerator#cite_note-12http://en.wikipedia.org/wiki/Nanogenerator#cite_note-12http://en.wikipedia.org/wiki/PVDFhttp://en.wikipedia.org/wiki/University_of_California_at_Berkeleyhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-11http://en.wikipedia.org/wiki/University_of_Illinois_at_Urbana_Champaignhttp://en.wikipedia.org/wiki/University_of_Illinois_at_Urbana_Champaignhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Barium_titanatehttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Perovskite_structurehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/wiki/Nanogenerator#cite_note-10http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectricityhttp://en.wikipedia.org/wiki/Hydrothermal_synthesishttp://en.wikipedia.org/wiki/Hydrothermal_synthesishttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-9http://en.wikipedia.org/wiki/GaNhttp://en.wikipedia.org/wiki/CdShttp://en.wikipedia.org/wiki/CdShttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Piezoelectric


15/17

controlling the process, and this technique is expected to be applied for

forming self-powered textile based onnanofiber.

Comparison of the reported materials by 2010 is given in the following

table.

Material Type GeometryOutput

voltage

Output

powerSynthesis

Researched

at

ZnO(n-

type)Wurtzite

D: ~100 nm,

L:

200~500 nm

VP=~9 mV @

R=500M

~0.5 pW

per cycle

(estimated)

CVD,

hydrothermal

process

Georgia

Tech.

ZnO(p-type)

Wurtzite D: ~50 nm,L: ~600 nm

VP=50~90 mV@ R=500M

5~16.2 pW

per cycle

(calculated)

CVD GeorgiaTech.

ZnO-ZnSWurtzite

(Heterostructure)Not stated

VP=~6 mV @

R=500M

~0.1 pW

per cycle

(calculated)

Thermal

evaporation

and etching

Georgia

Tech.

GaN Wurtzite

D:

25~70 nm,

L: 10~20 m

Vavg=~20

mV,Vmax=~0.35

V@ R=500M

~0.8 pW

per cycle

(average,calculated)

CVDGeorgia

Tech.

CdS WurtziteD: ~100 nm,

L: 1 mVP=~3 mV Not stated

PVD,

Hydrothermal

Process

Georgia

Tech.

BaTiO3 PervoskiteD: ~280 nm,

L: ~15 m

VP=~25 mV @

R=100M

~0.3 aJ per

cycle

(stated)

High

temperature

chemical

reaction

UIUC

PVDF Polymer

D: 0.5~6.5

m, L:

0.1~0.6 mm

VP=5~30 mV

2.5 pW~90

pW per

cycle

(calculated)

Electro

spinningUC Berkely
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Applications:-

Nanogenerator is expected to be applied for various applications where

the periodic kinetic energy exists, such as wind and ocean waves in a

large scale to the muscle movement by the beat of a heart or inhalation

of lung in a small scale. The further feasible applications are as follows.

Self-powered nano/micro devices

One of the feasible applications of nanogenerator is an independent or a

supplementary energy source to nano/micro devices consuming

relatively low amount of energy in a condition where the kinetic energy

is supplied continuously. One of example has been introduced byProfessor Zhong Lin Wangs group in 2010 by the self-powered pH or

UV sensor integrated VING with an output voltage of 20~40 mV onto

the sensor.

Still, the converted electrical energy is relatively small for operating

nano/micro devices; therefore the range of its application is still bounded

as a supplementary energy source to the battery. The breakthrough is

being sought by combining the nanogenerator with the other types of

energy harvesting devices, such assolar cellor biochemical energyharvester.

[14][15]This approach is expected to contribute to the

development of the energy source suitable for the application where the

independent operation is crucial, such asSmartdust.

Smart Wearable Systems

The outfit integrated or made of the textiles with thepiezoelectricfiber

is one of the feasible applications of the nanogenerator. The kineticenergy from the human body is converted to the electrical energy

through thepiezoelectricfibers, and it can be possibly applied to supply

the portable electronic devices such as health-monitoring system

attached with theSmart Wearable Systems. The nanogenerator such as
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VING can be also easily integrated in the shoe employing the walking

motion of human body.

Another similar application is a power-generating artificial skin.

Professor Zhong Lin Wangs group has shown the possibility bygenerating AC voltage of up to 100 mV from the flexible SWG attached

to the running hamster.[16]

Transparent and Flexible Devices

Some of thepiezoelectricnanostructurecan be formed in various kinds

of substrates, such as flexible and transparent organic substrate. The

research groups in SKKU (Professor Sang-Woo Kims group) and SAIT

(Dr. Jae-Young Chois group) have developed the transparent andflexible nanogenerator which can be possibly used for self-powered

tactile sensor and anticipated that the development may be extended to

the energy-efficient touch screen devices. Their research focus is being

extended to enhance the transparency of the device and the cost-

effectiveness by substituting Indium-Tin-Oxide (ITO) electrode with a

graphenelayer.[17]

Implantable Telemetric Energy Receiver

The nanogenerator based on ZnOnanowirecan be applied for

implantable devices sinceZnOnot only is bio-compatible but also can

be synthesized upon the organic substrate, rendering the nanogenerator

bio-compatible in overall. The implantable device integrated with the

nanogenerator can be operated by receiving the external ultrasonic

vibration outside the human body, which is converted to the electrical

energy by thepiezoelectricnanostructure.
http://en.wikipedia.org/wiki/Nanogenerator#cite_note-15http://en.wikipedia.org/wiki/Nanogenerator#cite_note-15http://en.wikipedia.org/wiki/Nanogenerator#cite_note-15http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/ITOhttp://en.wikipedia.org/wiki/ITOhttp://en.wikipedia.org/wiki/Graphenehttp://en.wikipedia.org/wiki/Graphenehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-16http://en.wikipedia.org/wiki/Nanogenerator#cite_note-16http://en.wikipedia.org/wiki/Nanogenerator#cite_note-16http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-16http://en.wikipedia.org/wiki/Graphenehttp://en.wikipedia.org/wiki/ITOhttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-15

Documents

Electrodynamic Certificate t7