Q.1 Determine the net current density for the semiconductor

device shown below in which there is a net generation rate .

Sketch the electron and hole currents within the spatial interval

(x1,x2). Assume steady state condition.22 3 1

10N N P P

G R cm s G R− −

− = = −

G-NumberB. Mazhari, IITK

27

x1=0 x2=20µm

JP(0)=0 JN(x2)=0

Q.2 Determine current (under steady state) for the condition

Shown below:

po

x

F~0 F~105V/cm

G-NumberB. Mazhari, IITK

28

x=0 W2=300nmW1=100nm

Q.3 How can the following potential profile be created under

equilibrium conditions?

0.8V

ψ(x)

G-NumberB. Mazhari, IITK

29

0V0.15V

J=JP=JP(drift)n~0, no doping

Q.4 For the device shown below, determine variation of

hole density and electric field.

G-NumberB. Mazhari, IITK

30