EE-113

Semiconductor Devices Instructor: Prof. Jeffrey A. Hopwood 101A Halligan Hall Ph: (617) 627-4358 hopwood@ece.tufts.edu Conference Hours: 5-5:55pm Monday and Wednesday; also by appointment and via email. Text: "Fundamentals of Semiconductor Devices," B.L. Anderson and R.L. Anderson (McGraw-Hill, 2005). Time: Lectures are Mondays and Wednesdays, 6:00 – 7:15pm Prerequisite: EE 11 and Math 38 Who:

Students interested in Semiconductors and Electron Devices, Nanotechnology, Integrated Circuit Fabrication, VLSI Design, MEMS, and Materials Science.

Description:

This is an introductory graduate course intended to cover the fundamental physics of semiconductor device operation. The course begins by developing a mathematical and physical description of electrons and holes in semiconductor materials. This understanding is then extended to develop device equations for diodes, bipolar junction transistors, and MOSFETs. State-of-the-art concepts will be discussed once the basic understanding of each device is covered.

Course Goals:

• develop a working knowledge of quantum mechanics necessary for understanding microelectronics and nanotechnology

• understand the energy band structure of solid state materials • understand carrier transport (current flow) in semiconductors

- 2 -

• mathematically and physically describe the operation of o pn junctions (diodes) o metal-oxide-semiconductor field effect transistors (MOSFETs) o bipolar junction transistors (BJTs)

• understand how the physical limitations of these devices impact their use in electronic systems

• understand how the physical limitations of these devices impact dimensional scaling (i.e., Moore’s Law)

Course Outline: Topic Text Reading Approximate Dates Introduction/Overview PowerPoint handouts 01/16/08 Semiconductor Materials Electron energy states Quantum mechanics Homogeneous semiconductors Density of States Distribution functions Current Flow Phonons Non-homogeneous semicond.

Part 1 Chapter 1 Supplement 1A Chapter 2 Appendix D Handout, Suppl. 1B.2 Chapter 3 Handout, Suppl 1B.4 Chapter 4

01/21/08 – 02/13/08

Diodes The Basics Advanced concepts

Part 2 Chapter 5 Chapter 6

02/18/08 – 03/12/08

Midterm exam 03/12/08 Spring break 03/15/08 – 03/23/08 Field-Effect Transistors MOSFET Basics Advanced concepts

Part 3 Chapter 7 + Suppl. 3 Chapter 8.3, 8.8, 8.9 +handouts

03/24/08 – 04/09/08

Bipolar Junction Transistors DC operation Time-dependent analysis HBT

Part 4 Chapter 9 Chapter 10 Suppl. 4.2, 4.3

04/14/08 – 04/28/08

Exam Week 05/02/08 – 05/09/08 Grading: Homework: 20% Research Project/Presentation 20% Midterm Exam: 30% Final Exam: 30% 100%