ECPE Workshop Workshop "Failure Analysis Tools for Wide Band-Gap Devices“ 16 - 17 October 2014, Rouen, France CECOVIM Presentation: Dedicated joint research lab to the mastering

ECPE Workshop "Failure Analysis Tools for Wide Band-Gap Devices“

16 - 17 October 2014, Rouen, France

Industry Oriented Platform Dedicated to Reliability Case CECOVIM

Abstract: This industry oriented platform dedicated to reliability of mechatronic systems, CECOVIM, results from a research projet, AUDACE, initiated in 2008 with two major electronics manufacturers, Thales and VALEO. The aim of this project was to improve reliability and provide accurate tools to predict the lifetime of complex mechatronic systems using new device technologies such as GaN power transistors and/or SiC high voltage diodes. One major output of this project was the creation of an associated lab between two academic labs (GPM and LOFIMS) and one SME (CEVAA), gathering the means (innovative ageing benches, depackaging machines, microscopes…) and methodologies (reliability-oriented models, failure analysis flow…) developed during this project. The aim is to bring to electronic and more widely mechatronic systems manufacturers, appropriate answers to their problems, through services, tests and technical support. The structure of this platform will be presented and two cases of typical studies concerning reliability of AlGaN/GaN power HEMTs and SiC Schottky power diodes will be highlighted. About the speaker: Jean Baptiste FONDER was born in Charleville-Mézières, France, in July 1986. He received the Diploma degree in electrical engineering, specialized in microwave electronics, from the ENSEA (Ecole Nationale Supérieure de l'Electronique et de ses Applications) and the Master degree "Electronique des Systèmes Autonomes" from the Cergy Pontoise University in 2009. He joigned in October 2009 to October 2012 the ETIS (Equipes Traitement de l'Information et Systèmes) and GPM (Groupe de Physique des Matériaux) labs as a PhD student where he worked on the reliability study of Gallium Nitride power HEMTs for radiofrequency amplifiers, for the AUDACE project. From November 2012 to December 2013, he gets involved in a post-doctoral training in the GPM lab to work on reliability of AlGaN/GaN HEMT power switches for power conversion. From January 2014, he is with the CEVAA where he is R&D manager for the CECOVIM platform. Jean-Baptiste Fonder - CEVAA R&D Manager 2, rue Joseph Fourier Technopôle du Madrillet 76800 St Etienne du Rouvray Phone : +33 (0)2.32.91.73.50 Fax : +33 (0)2.32.91.73.59 @ : [email protected] http : http://www.cevaa.com

http://www.cevaa.com/�

ECPE Workshop "Failure Analysis Tools for Wide Band-Gap Devices“ 16 - 17 October 2014, Rouen, France

Industry Oriented Platform

Dedicated to Reliability

Case CECOVIM


1 / CECOVIM PLATFORM

2 / TECHNICAL CASE STUDIES

Case 1 : ESD stress and thermal storage on 1200V Schottky diodes for power conversion applications

Case 2 : Pulsed-RF life tests on power AlGaN/GaN HEMTs for RADAR applications

3 / CONCLUSIONS

Outline

1 / CECOVIM Platform


► 2008 : Start of AUDACE Project (Root cause failure analysis on devices for mechatronic embedded systems)

► 2012 : End of AUDACE Project

► 2013 : Creation of CECOVIM, an Associated Lab between CEVAA, GPM and LOFIMS

► 2014 January 1st : Official start of CECOVIM

PARTNERS

BRIEF HISTORY OF CECOVIM:


CECOVIM Presentation:

► Dedicated joint research lab to the mastering of ageing for mechatronic systems.

► High technologic and human skills.

► Easily reachable, in network and from an unique head office, CEVAA.

► Well suited to manufacturer needs and able to support them to improve their process

and competitiveness, by offering :

– Service provision, Reliabilistic Design / Tests / Qualification

– Project engineering / Research projects

– Training / Technology transfer


ORGANISATION

Skills :

• Vibratory dynamic analysis

Functions :

• Head Office

• Market research, promotion, communication

• Offer coordination and development

• Business model management

• Smart Management Quality

CECOVIM

Skills :

• Ageing on radiofrequency and

power conversion devices

• Failure Analysis

• Training

Skills :

• Stochastic simulations

• electro-thermo-mechanic computing and modeling

• Training

Functions :

• Technical management

• Technical quote proposition

• Service, R&D, Technological

surveillance

• Scientific approach, state of the Art

Functions :

• Service, R&D, Technological

surveillance

• Scientific approach, state of the Art


Mechatr

onic

Syst

em

Physical

phenomena

modeling

Thermal

Electric

Vibratory

Failure analysis

Individual or mixed

stresses

Working profiles definition

Mechatronic systems qualification

Ruggedness stress tests

Long span multiphysical stress tests

Improving existing

reliability handbooks

Research projects

Training

Physicial measurement

Expertise (material

expertise)

Enhancing reliability of

technological processes

Research projects

Added V

alu

e

VALUE CHAIN


Reliability (Long span tests on systems or sub-systems, qualification, burn-in…)

Durability (Temperature, vibrations, shocks, humidity, electric stress…)

Research study (New device technology characterization, material analysis…)

2 / Technical Case Studies


INTERVENTION SPECTRUM

Focus on Electron Devices activities

From Device … … … … … to Device

Electrical Characterization

Test Jig Design Ageing Tests

Modelling & lifetime prediction

Depackaging & Failure Analysis

Case 1 :

ESD stress and thermal storage

on 1200V Schottky diodes

for power conversion applications


Case 1 : ESD stress and thermal storage on 1200V SiC Schottky diodes


Market segment :

• Automotive

• Aerospace

• Military

• Railway

• Aeolian

• Energy production

Applications :

• Electric power supplies

• High Efficiency DC-DC converters

• Inverters

• Power Factor Correctors (PFC)

Issue :

Device integration for power conversion is a major concern for tomorrow’s energy production and management systems.

The reliability of the whole system is ensured on one hand by an accurate choice of the semiconductor technology but on the

other, by a rational packaging and thermal management.

Outputs :

• Thermal storage with or without electrical stress.

• Periodic electrical characterization with degradation monitoring.

• Device decapsulation and die check.

• Physical analysis.

• Feedback simulations and improvement propositions.




Thermal Storage on 1200V SiC Schottky diodes : impact on die brazing and packaging

Conditions

- 350 hours @ 240°C

- I(V) characterization every 24 hours

Electrical

Characterization

Physical Analysis

Cross-section X-Rays




ESD stress on 1200V SiC Schottky diodes : a robustness study

Conditions

- 15 kV HBM electro-static discharges

- Multiple strikes

Electrical Characterization

Modelling

Physical Analysis

OBIRCH Analysis Focused Ion Beam




Decapsulation means :

• Micromilling

• LASER ablation

(ceramic & plastic packages)

• Chemical etching (plastic)

Thermal stress : • Possible coupling with

vibratory stress

• 1m3

• -75°C to +200°C

• 0% to 100% humidity

• Up to 20°C/min

• Thermal chamber

• 300°C small capacity oven

• 1000°C storage furnace

Electrical characterizations :

• I(V) measurement up to 250V 30A

• Low current I(V) measurements (≈pA)

Physical analysis :

• X-Rays Radiography

• EMMI Photon Emission Microscopy

• OBIRCH Microscopy

• (Scanning Electron Microscopy)

• (Focused Ion Beam)

• (Transmission Electron Microscopy)

• (EDX Analysis)

• (Multiphysical simulation)

Case 2 :

Pulsed-RF life tests

on power AlGaN/GaN HEMTs

for RADAR applications



Issue :

New wide bandgap semiconductor technologies integration such as SiC and GaN in critical equipment

(communication, security, defence, medical) could reduce system reliabilty.

Market segment :

• Telecommunications

• Aerospace

• Military

• Medical

Applications :

• RADAR

• Mobile phones base stations

• Industrial heating

• Medical electronics

Outputs :

• RF amplifier design and fabrication

• Measurements and accelerated ageing tests on RF power devices.

• Electrical characterization before and after stress.

• Physical analysis.

• Lifetime estimation and ageing phenomena modeling.

• Improvement propositions.



Enhanced drain voltage pulsed-RF life test on GaN HEMTs

Conditions

- Several drain voltage (40V, 43V, 45V)

- Maximum output power matching

- Saturated operating contions

50 mm

30

mm

Impedance matching &

Circuit design

Ageing tests



MTTF = 2.5 e6 hours (≈ 290 years)

@ TCH = 200°C 450µs/15%

Lifetime prediction Electrical characterization

Reliability modelling

Physical analysis



Accelerated RF ageing tests : • Temperature, voltage stresses

• Up to 1kW in pulsed mode

• L and S band (extensible)

RF amplifier design

and measurement: • Hybrid technology

• Bipolar, FET

• Si, GaAs, SiC, GaN

• Up to 1kW

Electrical characterizations :

• I(V) measurement up to 250V 30A

• Low current I(V) measurements (≈pA)

• [S] dynamic measurments possibles

Physical analysis :

• RX Radiography

• EMMI Photon Emission Microscopy

• OBIRCH Microscopy

• (Scanning Electron Microscopy)

• (Focused Ion Beam)

• (Transmission Electron Microscopy)

• (EDX Analysis)

• (Multiphysical simulation)

3 / Conclusions


Conclusions

• Large intervention spectrum, from device to device.

• A unique head office, CEVAA.

• High level of technical expertise with state-of-the-art facilities.

• Innovative test benches.

• Electrical means can be coupled with vibratory facilitites multiphysical life tests.

Technopôle du Madrillet / 2, rue Joseph Fourier / 76800 St. Etienne du Rouvray / Tél. 02 32 91 73 50 / Fax 02 32 91 73 59

Project Manager for mecatronic reliability

Jean-Baptiste FONDER

[email protected] / Tél. 02 32 91 73 50

Sales Manager

Fabrice FOUQUER

[email protected] / Tél. 06 74 41 56 69

Thank you for your attention !

Documents

ECPE Workshop Workshop "Failure Analysis Tools for Wide Band-Gap Devices“ 16 - 17 October 2014, Rouen, France CECOVIM Presentation: Dedicated joint research lab to the mastering