ECE 658: Semiconductor Material and Device Characterization

Peide (Peter) YeOffice: Birck 1291

E-mail: yep@purdue.eduTel: 494-7611

Course website: http://cobweb.ecn.purdue.edu/~yep/courses.htmLocation: EE 226

Time: MWF 8:30-9:20 amOffice Hour: 10:00am-7:00pm anytime

Course Description: An examination of modern characterization techniques routinely employed to determine semiconductor material and device parameters.Concepts and theory underlying the techniques are reviewed, and sampleexperimental results are presented. Emphasis is on techniques employing electrical measurements.

Course Objectives: This course is intended for graduate students in MN and  related areas who are either i) interested in pursuing research in semiconductor materials, structures or devices, or ii) seeking the broad device background on the-state-of-the-art technologies for a future R&D career in the microelectronic industry. 

Fundamentals State-of-the-art

Teaching Philosophy for ECE 658

• Motto “Durch Messung zu Wissen”(German) “During or through measurement to

understand” (English)• The best way to learn ECE 658 is to

measure the devices in the lab and understand what you are measuring.

• 4 lectures + 2 hours (lab or discussion sessions) every two weeks

Required Textbook:

$65 at Amazon

(1)Resistivity (2)Carrier/Doping Density

(3) Rc and Schottky Barries

(4) Rs,Lg,VT

(5) Defects (6) Oxide integrity

(7) Carrier lifetime

(8) Mobility

Course GradingFinal Exam : 100%

Home work / attendance/literature research / discussion:

determining the final grade in borderline cases

From 612--Prof. M.Lundstrom

yep/

Lecture 1: Resistivity

Insulator

semiconductor

metal

(1) DOS(2) Mobility

easy

(1) DOS(2) Mobility

Lecture 1: Resistivity

1.1 Introduction

Lecture 1: Resistivity1.2 The Four-Point Probe

Big difference: two point and four point measurements

Big difference

For an arbitrarily shaped sample,

What decides F, next Lecture

Homework: Reading relevant pages