ECE 425 - VLSI Circuit Design - Guilanstaff.guilan.ac.ir/staff/users/rebrahimi/fckeditor_repo/file... · VLSI Basic Concepts V(x) V(y) f V OH = f (V IL) V IL V IH V(y)=V(x) Switching

VLSIBasic Concepts

V(x)

V(y)

fVOH = f (VIL)

VIL VIH

V(y)=V(x)

Switching ThresholdVM

VOL = f (VIH)

V(y)V(x)

Contents

Property of Digital CircuitsQuantization of AmplitudesRegenerativeDirectivityFan-In, Fan-Out

Power and Energy Dissipation

NoiseCapacitiveInductivePower and Ground Bounce

Noise MarginsExample TTLExample CMOS

Noise Immunity

Ideal Logic ElementVTCDelay DefinitionsDelay Simplicity

InvertersCMOS Properties CMOS InverterVTCDetermining VIL and VIHDelay ComputingComputing the CapacitancesPower ConsumptionDelay Minimizing

Property of Digital Circuits

Quantization of AmplitudesRegenerativeDirectivityFan-In, Fan-OutPower and Energy Dissipation

Voltage Transfer Characteristics (VTC)

V(x)

V(y)

fV(y)V(x)

VOH = f (VIL)

VIL VIH

V(y)=V(x)

Switching ThresholdVM

VOL = f (VIH)

Nominal Voltage Levels

Quantization (Mapping Logic Levels)

V(x)

V(y)Slope = -1

Slope = -1

VOH

VOL

VIL VIH

The regions of acceptable high and low voltages are determined by VIH and VIL that represent the points on the VTC curve where the gain=-1

"1"

"0"

UndefinedRegion

VOH

VOL

VIL

VIH

V(y)V(x)



The Regenerative Property

v0 v1 v2 v3 v4 v5 v6

-1

1

3

5

0 2 4 6 8 10

t (nsec)

V (v

olts

) v0

v2v1

A gate with regenerative property ensure that a disturbed signalconverges back to a nominal voltage level

Conditions for Regeneration

v1 = f(v0) ⇒ v1 = finv(v2)

v0 v1 v2 v3 v4 v5 v6

v0

v1

v2

v3 f(v)

finv(v)

Regenerative Gate

v0

v1

v2

v3

f(v)

finv(v)

Nonregenerative Gate

To be regenerative, the VTC must have a transient region with a gain greater than 1 (in absolute value) bordered by two valid zones where the gain is smaller than 1. Such a gate has two stable operating points.



Directivity

A gate must be undirectional: changes in an output level should not appear at any unchanging input of the same circuit

In real circuits full directivity is an illusion (e.g., due to capacitive coupling between inputs and outputs)

Key metrics: output impedance of the driver and input impedance of the receiver

ideally, the output impedance of the driver should be zeroinput impedance of the receiver should be infinity



Fan-In and Fan-Out

N

M

Fan-out – number of load gates connected to the output of the driving gate

gates with large fan-out are slower

Fan-in – the number of inputs to the gate

gates with large fan-in are bigger and slower




Power consumption: how much energy is consumed per operation and how much heat the circuit dissipates

supply line sizing (determined by peak power)Ppeak = Vddipeak

battery lifetime (determined by average power dissipation)p(t) = v(t)i(t) = Vddi(t) Pavg= 1/T ∫ p(t) dt = Vdd/T ∫ idd(t) dt

packaging and cooling requirements

Two important components: static and dynamic

E (joules) = CL Vdd2 P0→1 + tsc Vdd Ipeak P0→1 + Vdd Ileakage

P (watts) = CL Vdd2 f0→1 + tscVdd Ipeak f0→1 + Vdd Ileakage

f0→1 = P0→1 * fclock


Propagation delay and the power consumption of a gate are related Propagation delay is (mostly) determined by the speed at which a given amount of energy can be stored on the gate capacitors

the faster the energy transfer (higher power dissipation) the faster the gate

For a given technology and gate topology, the product of the power consumption and the propagation delay is a constant

Power-delay product (PDP) – energy consumed by the gate per switching event

An ideal gate is one that is fast and consumes little energy, sothe ultimate quality metric is

Energy-delay product (EDP) = power-delay

peak peak supplyP i V max(p(t))= =

T Tsupply

av supply0 0

VP p(t)dt i (t)dt

T T= =∫ ∫

1

av pPDP P t Energy dissipated per operation= × =

Power-Delay Product

tp=?


Ring Oscillator for Delay Measurement

v0 v1 v2 v3 v4 v5

v0 v1 v5

T = 2 × tp × N

Other Specification



Noise Immunity

Noise

In a digital circuit, noise is unwanted voltages.If noise amplitude at the input of any logic circuit is smaller than a specified critical magnitude known as the noise margin of that circuit, the noise amplitude will be attenuated. In actual practice, the noise is greater because the voltage must be increased to the switching threshold.Switching actually occurs in the undefined region. Varies widely by manufacturer, temperature and quality of chip.

Sources of Noise in Digital Integrated Circuits

v(t)

i(t)

VDD

from two wires placed side by sidecapacitive coupling

• voltage change on one wire can influence signal on the neighboring wire

inductive coupling• current change on one wire can

influence signal on the neighboring wire

from noise on the power and ground supply rails

can influence signal levels in the gate

Other Specification



Noise Immunity

Noise Margins

OLILL

IHOHH

VVNMVVNM

−=−=

VIH and VIL are defined by the points on the voltage transfer curve where the slope is 1.

Noise Margins

UndefinedRegion

"1"

"0"

Gate Output Gate Input

VOH

VIL

VOL

VIHNoise Margin High

Noise Margin Low

NMH = VOH - VIH

NML = VIL - VOL

Gnd

VDD VDD

Gnd

Example TTL

InputVoltage

2V

.8V

+5.5V

GND

High

Low

Undefined

High

Low

Undefined

OutputVoltage

GND

+5.5V

2.4V

.4V

Typical 3.5V

Typical .1V

TTLVoltage characteristics of TTL Logical 0 (Low): GND - 0.8VLogical 1 (High): 2- 5.5V NML=?NMH=?NM=?

Example CMOS

InputVoltage

3V

+10V

GND

High

Low

Undefined

High

Low

Undefined

OutputVoltage

GND.5V

7V

+10V9.5V

CMOSVoltage characteristics of CMOSLogical 0 (Low): GND - 0.5VLogical 1 (High): 7-10VNML=?NMH=?NM=?

Other Specification



Noise Immunity

Noise Immunity

Noise margin expresses the ability of a circuit to overpower a noise source

noise sources: supply noise, cross talk, interference, offsetAbsolute noise margin values are deceptive

a floating node is more easily disturbed than a node driven by a low impedance (in terms of voltage)

Noise immunity expresses the ability of the system to process and transmit information correctly in the presence of noiseFor good noise immunity, the signal swing (i.e., the difference between VOH and VOL) and the noise margin have to be large enough to overpower the impact of fixed sources of noise

The Ideal Logic Element

VTCDelay DefinitionDelay Simplicity

g = - ∞

Vout

Vin

Ri = ∞

Ro = 0

Fanout = ∞

NMH = NML = VDD/2

The Ideal Logic Element (VTC)

The ideal Logic should haveinfinite gain in the transition regiona gate threshold located in the middle of the logic swinghigh and low noise margins equal to half the swinginput and output impedances of infinity and zero, respectively

o inV =V

VTC of Real Inverter

0.0 1.0 2.0 3.0 4.0 5.0Vin (V)

1.0

2.0

3.0

4.0

5.0

Vou

t (V

)

VMNMH

NML



Delay Definitions

t

Vin

Vout

inputwaveform

t

50%

tpHL

50%

tpLH

tf

90%

10%tr

signal slopes

tp = (tpHL + tpLH)/2

Propagation delay

outputwaveform



Delay Simplicity

cyclet

cyclet

t

t

0

0OLV

inV

outV

OHV

PLHtPHLt

OHV

50%

OLV

Vin Vout

Propagation delay

tp = (tpHL + tpLH)/2

Inverters

CMOS PropertiesCMOS Inverter

VTCDetermining VIL and VIHDelay ComputingComputing the Capacitances

Power ConsumptionStatic Power ConsumptionDynamic Power Consumption

Delay Minimizing

CMOS Properties

Full rail-to-rail swingSymmetrical VTCPropagation delay function of load capacitance and resistance of transistorsNo static power dissipationDirect path current during switching

Inverters

CMOS Properties CMOS Inverter



Delay Minimizing

CMOS Inverter

Polysilicon

In Out

VDD

GND

PMOS 2λ

Metal 1

NMOS

OutIn

VDD

PMOS

NMOS

Contacts

N Well

Inverters




Delay Minimizing

Vout

Vin1 2 3 4 5

12

34

5

NMOS linPMOS off

NMOS satPMOS sat

NMOS offPMOS lin

NMOS satPMOS lin

NMOS linPMOS sat

CMOS Inverter VTC

MV

0.1 0.3 1.0 3.2 10.01.0

2.0

3.0

4.0

kp/kn

VM

Switching Threshold (VM) as a Function of Transistor Ratio

DD Tp TnM

r(V V )+VV

1+r−

=p

n

kr=

k

Inverters




Delay Minimizing

Determining VIL and VIH(Method1)

Write the large signal equation for input/output relationAt VIH (or VIL):

out

in

VV

∂= −

∂1

Determining VIL and VIH(Method2)

VOH

VOL

Vin

Vout

VM

VIL VIH

( )OH OL DDIH IL

MIH M

DD MIL M

DD IH

IL

V V VV Vg g

VV Vg

V VV Vg

NMH=V VNML=V

− −− = − =

= −

−= +

−

A simplified approach

Determining VIH and VIL(Method2)

inV mn ing V outVonr oprmp ing V

( ) ( )outmn mp on op

in

vg= g g r rv

= − + ×

Inverter Gain

0 0.5 1 1.5 2 2.5-18

-16

-14

-12

-10

-8

-6

-4

-2

0

Vin (V)

gain

Gain as a function of VDD

0 0.05 0.1 0.15 0.20

0.05

0.1

0.15

0.2

Vin (V)

Vou

t (V)

0 0.5 1 1.5 2 2.50

0.5

1

1.5

2

2.5

Vin (V)

Vou

t(V)

Gain=-1

Impact of Process Variations

0 0.5 1 1.5 2 2.50

0.5

1

1.5

2

2.5

Vin (V)

V out(V

)

Good PMOSBad NMOS

Good NMOSBad PMOS

Nominal

Inverters


VTCDetermining VIL and VIHDelay computingComputing the Capacitances


Delay Minimizing

Delay Computing Approach 1

VDD

Vout

Vin = VDD

CLIav

tpHL = CL Vswing/2

Iav

CL

kn VDD~


Switch Model of CMOS Transistor

Ron

|VGS| < |VT| |VGS| > |VT|

|VGS|


tpHL = f(Ron.CL)

V outVout

R n

R p

V DDV DD

CLCL

(a) Low-to-high (b) High-to-low


Model circuit as first-order RC networkvout (t) = (1 – e–t/τ)V

where τ = RC

Rvout

C

vin Time to reach 50% point ist = ln(2) τ = 0.69 τ

tpHL = 0.69RonCL

Time to reach 90% point ist = ln(9) τ = 2.2 τ

Transient Response

0 0.5 1 1.5 2 2.5

x 10-10

-0.5

0

0.5

1

1.5

2

2.5

3

t (sec)

Vou

t(V)

tp = 0.69 CL (Reqn+Reqp)/2

tpLHtpHL

Inverters


VTCDetermining VIL and VIHDelayComputing the Capacitances


Delay Minimizing

Computing the Capacitances

VDD VDD

Vin Vout

M1

M2

M3

M4Cdb2

Cdb1

Cgd12

Cw

Cg4

Cg3

Vout2

Fanout

Interconnect

VoutVin

CLSimplified

Model

The Miller Effect

Vin

M1

Cgd1Vout

∆V

∆V

Vin

M1

Vout ∆V

∆V

2Cgd1

“A capacitor experiencing identical but opposite voltage swings at both its terminals can be replaced by a capacitor to ground, whose value is two times the original value.”

Computing the Capacitances

Capacitor Expression

Cgd1 2 CGD0 Wn

Cgd2 2 CGD0 Wp

Cdb1 Keqn(ADnCJ+PDnCJSW)

Cdb2 Keqp(ADpCJ+PDpCJSW)

Cg3 CoxWnLn

Cg4 CoxWpLp

Cw From Extraction

CL ∑

t pH

L(ns

ec)

0.35

0.3

0.25

0.2

0.15

trise (nsec)10.80.60.40.20

Impact of Rise Time on Delay

2 2pHL pHL(step) rt t (t /2)= +

0

4

8

12

16

20

24

28

2.00 4.001.00 5.003.00

Nor

mal

ized

Del

ay

VDD (V)

Delay as a function of VDD

Propagation Delay Scaling

NMOS/PMOS ratio

1 1.5 2 2.5 3 3.5 4 4.5 53

3.5

4

4.5

5x 10

-11

β

t p(sec

)

tpLH tpHL

tp

β = Wp/Wn

Inverters


VTCVIL and VIHDelayComputing the Capacitances


Delay Minimizing

Power Consumption

Static Power ConsumptionLeakage Diodes and TransistorsSubthreshold Leakage Component

Dynamic Power ConsumptionCharging and Discharging of CapacitorsShort Circuit path Between Supply Rails During Switching

Inverters




Delay Minimizing

Static Power ConsumptionStatic Power Consumption

Vin=5V

Vout

CL

Vd d

Istat

Pstat = P(In=1).Vdd . Istat

Leakage

Sub-threshold current one of the most compelling issues in low-energy circuit design!

Vout

Vdd

Sub-ThresholdCurrent

Drain JunctionLeakage

ReverseReverse--Biased Diode LeakageBiased Diode Leakage

Np+ p+

Reverse Leakage Current

+

-Vdd

GATE

IDL = JS × A

JS = 10-100 pA/µm2 at 25 deg C for 0.25µm CMOSJS doubles for every 9 deg C!

Subthreshold Leakage Component

Leakage control is critical for low-voltage operation

Inverters




Delay Minimizing

Dynamic Power Consumption

Energy/transition = CL * Vdd2

Power = Energy/transition * f = CL * Vdd2 * f

Vin Vout

CL

Vdd

Not a function of transistor sizes!Need to reduce CL, Vdd, and f to reduce power

Vin Vout

CL

Vdd

I VD

D (m

A)

0.15

0.10

0.05

Vin (V)5.04.03.02.01.00.0

Short Circuit CurrentsShort Circuit Currents

How to keep ShortHow to keep Short--Circuit Currents Low?Circuit Currents Low?

Short circuit current goes to zero if tfall >> trise,but can’t do this for cascade logic, so ...

Minimizing ShortMinimizing Short--Circuit PowerCircuit Power

0 1 2 3 4 50

1

2

3

4

5

6

7

8

tsin/tsout

P norm

Vdd =1.5

Vdd =2.5

Vdd =3.3

Keep the input and output rise/fall times the same(<10% of total Consumption)

IEEE JSSC Aug. 1984 by Veendrick

If Vdd < Vtn + |Vtp| then Short-circuit power can be eliminated!

Principles for Power Reduction

Prime choice: Reduce voltage!Recent years have seen an acceleration in supply voltage reductionDesign at very low voltages still open question (0.6 … 0.9 V by 2010!)

Reduce switching activityReduce physical capacitance

Total Power Dissipation

( )fCVP

VIIP

PPP

DDdynamic

DDleakagequiescentstatic

dynamicstatictotal

2=

+=

+=

Propagation Details

Most of Load is simple, but:Non-linear Self Capacitance

• Drain Junction and SidewallsRatio Logic

• Other current sources/sinks

Beware Body EffectSource at different potential from back

Inverters




Delay Minimizing

Delay Minimizing

Inverter ChainInverter DelayOptimum Delay

Example1Example2( Buffer Design)

Inverter Chain

CL

In Out

If CL is given:How many stages are needed to minimize the delay?How to size the inverters?

May need some additional constraints.

Delay Minimizing



Inverter Delay

WNunit

Nunit

unit

PunitP RR

WWR

WWRR ==⎟⎟

⎠

⎞⎜⎜⎝

⎛≈⎟⎟

⎠

⎞⎜⎜⎝

⎛=

−− 11

tpHL = (ln 2) RNCL tpLH = (ln 2) RPCL

2.5W

W

unitunit

gin CWWC 3=

Minimum length devices, L=0.5umAssume that for WP = 2.5WN = 2.5W

same pull-up and pull-down currentsapprox. equal resistances RN = RPapprox. equal rise tpLH and fall tpHL delays

Analyze as an RC network

Delay (D):

Load for the next stage:

Inverter with LoadDelay

RW

RW

CL

Load (CL)

tp = k RWCL

k is a constant, equal to 0.69Assumptions: no load -> zero delay

Wunit = 1

Inverter with Load

Load

Delay

Cint CL

CN = Cunit

CP = 2.5Cunit

2.5W

W

Delay = kRW(Cint + CL) = kRWCint + kRWCL = kRW Cint(1+ CL /Cint)= Delay (Internal) + Delay (Load)

Delay Formula

( )

( ) ( )γ/1/1

~

0int ftCCCkRt

CCRDelay

pintLWp

LintW

+=+=

+

Cint = γCgin with γ ≈ 1f = CL/Cgin - effective fanoutR = Runit/W ; Cint =WCunittp0 = 0.69RunitCunit

Apply to Inverter Chain

In

CL

Out

1 2 N

tp = tp1 + tp2 + …+ tpN

⎟⎟⎠

⎞⎜⎜⎝

⎛+ +

jgin

jginunitunitpj C

CCRt

,

1,1~γ

LNgin

N

i jgin

jginp

N

jjpp CC

CC

ttt =⎟⎟⎠

⎞⎜⎜⎝

⎛+== +

=

+

=∑∑ 1,

1 ,

1,0

1, ,1

γ

Delay Minimizing



Optimal Sizing for Given N

1,1,, +−= jginjginjgin CCC

Delay equation has N - 1 unknowns, Cgin,2 – Cgin,N

Minimize the delay, find N - 1 partial derivativesResult: Cgin,j+1/Cgin,j = Cgin,j/Cgin,j-1

Size of each stage is the geometric mean of two neighbors

each stage has the same effective fanout (Cout/Cin)each stage has the same delay

Optimum Delay and Number of Stages

1,/ ginLN CCFf ==

N Ff =

( )γ/10N

pp FNtt +=

When each stage is sized by f and has same fanout f:

Effective fanout of each stage:

Minimum path delay

Delay Minimizing



Example1

CL= 8 C1

In Out

C11 f f2

283 ==f

CL/C1 has to be evenly distributed across N = 3 stages:

Optimum Number of Stages

( ) ⎟⎟⎠

⎞⎜⎜⎝

⎛+=+=

fffFt

FNtt pNpp lnln

ln1/ 0/1

0γ

γγ

0ln

1lnln2

0 =−−

⋅=∂

∂

fffFt

ft pp γ

γ

For γ = 0, f = e, N = lnF

fFNCfCFC in

NinL ln

ln with ==⋅=

( )ff γ+= 1exp

For a given load, CL and given input capacitance Cin Find optimal sizing f

Delay Minimizing



Example2( Buffer Design)N f tp

1 64 65

2 8 18

3 4 15

4 2.8 15.3

1 64

1 8 64

1 4 6416

1 642.8 8 22.6

Documents

ECE 425 - VLSI Circuit Design - Guilanstaff.guilan.ac.ir/staff/users/rebrahimi/fckeditor_repo/file... · VLSI Basic Concepts V(x) V(y) f V OH = f (V IL) V IL V IH V(y)=V(x) Switching