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DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
2005 ITRS Public Conference
Emerging Research Materials
Seoul, KoreaDecember 13, 2005
Jim Hutchby – SRCMike Garner – Intel
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
ERM ParticipantsDimitri Antoniadis MITMarc Baldo MITKarl Berggren MITCharles Black IBMDawn Bonnell Penn. Univ.Alex Bratkovski HPGeorge Bourianoff IntelJohn Carruthers Port. St. Univ.Sang Wook Cheong Rutgers UnivSupriyo Datta Purdue Univ.Alex Demkov U. TexasSteve Erwin NRLM. Garner Intel, ChairBruno Ghyselen SOITECHDan Herr SRCSusan Holl Intel
Jim Hutchby SRC
Berry Jonker NRL
Gerhard Klemick Purdue Univ.
Ted Kamins HP
Richard KeihlU. Wisc.
Phil Kuekes HP
Louis Lome IDA Cons.
Mark Lundstrom Purdue
Kathryn Moler Stanford U.
David Muller Cornell U.
Ramamoorthy Ramesh UCB
Mark Reed Yale Univ.
Rafael Reif MIT
Dave Robert Air Products
Morley Stone DARPA
Sadasivan Shankar Intel
Shinichi Tagaki U of Tokyo
Tom Theis IBM
Jim Tour Rice Univ.
Ruud Tromp IBM
John Henry Scott NIST
Eric Vogel NISTVictor Zhirnov SRCIgor Zutic NRLKang Wang UCLARainer Waser Aacken U.Stan Williams HPIn Kyeong Yoo Samsung
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Devices & Material Interplay
DDS GateGate
Device ConceptDetermines Material Properties
Material properties optimized for device
Critical Properties = Properties for Device OperationExample: CNT DOS, Eg & meff f(chirality & diameter) Critical Properties Material Properties
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Strategic Thrust
• 1D charge state materials• Molecular state materials• Spin state materials• Strongly correlated electron state materials• Directed & self-assembly mechanisms• Interface & contact materials and processes• Nanomaterial Environmental, Safety, & Health Increased collaboration & coordination between
synthesis, metrology and modeling– University, Gov’t, National Labs & Industry
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
• 1D charge state materials– Control of properties, location & orientation
• Molecular state materials– Understand transport & switching mechanisms
• Spin state materials– Room temperature DMS materials, and spin gain
• Strongly correlated electron state materials– Determine potential for novel device applications
• Directed & self-assembly of nano-structured materials– Establish sub nm location and orientation control
• Interface & contact materials & processes• Improved metrology & modeling for nm scale structure and
material properties
Key Goals
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
1D Material Challenges
• Control diameter, nano-structure, bandgap & electronic properties
• Control location & orientation
DDS GateGate
DDS GateGate
0 Device State
0
1
Charge State
Charge State
1
+ + + +
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Carbon Nanotube Material Progress
E-Field Aligned Growth, H. Dai 2001
Patterned Growth on Silicon, H. Dai 1998
CNT’s Discovered,Iijima 1991 22nm Generation requires > 109 transistors/cm2
1991 Discovery Material Characterization & Improvement
Control location & orientation
Control of Properties
Doping of CNT Sidewalls N. Minami, 1999
Chemical Separation Of Metallic and semiconductor CNTs, N. Minami, 2005
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Molecular State Challenges
• Understand the transport & switching mechanism
O2N
NH2
S
Au
Au
Molecular State
0
CollectiveConformationalState
S S
Au
Au
Charge StorageState
Device State 1 1
Neutral State
O2N
NH2
S
Au
Au
-
S
Au
Au
S
0
Neutral State
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Molecular State Material Progress
Tools Emerging to Characterize Molecular State
Molecular “Gadget”, 1974
Inelastic Electron Tunneling Spectroscopy, M. Reed 2004
STM Molecular Switching, M. Reed 1996
Backside FTIRC. Richter, 2005
Siliconoxide
Metal
Siliconoxide
Siliconoxide
Metal
Understand Transport& Switching Mechanisms
Understand Contact Formation & Interactions
Complex contact & molecule interactions
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Spin State Challenges
• Room temperature ferromagnetic semiconductors (T curie)
• Efficient Spin Injection
• Materials Properties to Support Spin Gain
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Spin State Material Progress
Spin Injection Efficiency
0
0.2
0.4
0.6
0.8
1
1998 2000 2002 2004
Year
Spin
Inje
ctio
n Ef
ficie
ncy Low Temp FerroM Spin
Injection
RT Metallic Spin Injection
Need Room Temp FM Semiconductor & Spin Gain
Maximum Curie Temperature
0
100200
300
400
500600
700
1990 1995 2000 2005
Year
Cur
ie T
empe
ratu
re (T
c (K
)) Doped Oxides
(III.Mn)V
Carrier mediated exchange
Overlapping Bound Magnetic Polarons, Coey, Nature 2005
Room temperature
ferromagnetic
semiconductors
(T curie)
Efficient Spin Injection
Spin GAIN ?????
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
• Materials exhibit complex phase relationships•Spin, charge, orbital ordering
• Phase transitions can be induced by small perturbations•Magnetic field•Phonon•Charge
Strongly Correlated Electron State Materials
Can these materials enable new device functions?
TokuraTokura
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Directed Self Assembly Challenges
• Fabricate reproducible sublithographic features
• Structures aligned to lithographic features
• Features scale to sub 5nm resolution
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Sublithographic Directed Self Assembly Lithography
Isolated lines
Periodic lines with variable pitch and size at different locations
Lines (isolated & periodic) with right angles
Isolated lines with T intersections
Isolated openings (contacts or vias)
Periodic openings with variable pitch and size
Isolated rectangular contact openings
Registration between different layers is most critical!!!Goal: Determine whether fundamental mechanisms can support Directed Self Assembly of viable sublithographic structures
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Directed Self Assembly Progress
Di-block Copolymer self assembly on patternedMolecular monolayer: Goal reduce LERP. Nealey, U. Wisc.
Di-block Copolymer self assembly of magnetic materials in a confined space.C. Ross, MIT
Progress in aligning self assembled structures with lithographically defined structures
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Nanomaterial Environmental Safety & Health (ESH)
• Nanomaterial ESH research needs– Included in ESH Chapter– Understand unique properties– Detection metrology– Nanomaterial management best practices
DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference
Summary
• Material improvement is progressing, but….• Significant challenges for each material will
require:– Improved synthesis capabilities– New metrology capabilities– Improved materials models– Improved interfaces– Directed assembly processes– Nanomaterial ESH research
Significant Collaboration is Required!!!