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JTG:Oct20,2017 MichaelCurrentOct20,[email protected] 1
1-1:30pmJohnBorland:JOBTechnologies,Aiea,HI.Achieving100%ResidentialRenewablesinHawaiiwithSolar&Multi-Storage.
1:30-2pm Mingguo Liu,Rayton Solar,SantaMonica,CAHydrogenImplantandCleavingtoUnlockPreviouslyUntappedSolarReal-Estate.
2-2:30pm LisaMandrell,IntevacInc.,SantaClaraCAHighProductivity,LowCostIonImplantforSolarPower
2:30-3pmBreak:Cookies&conversation
3-3:30pm Udit Sharma,EAG,Sunnyvale,CAStudyofMgImplantDamageinGaN usingRBSchanneling,TEM&AtomProbe.
3:30-4pmK.V.Rao,AppliedMaterials,Gloucester,MAIonImplantApplicationstoEnableAdvancesinSemiconductorTechnologies.
Date:Friday,Oct20,2017Time:1:00pm- 4:00pm
Location:EAGLaboratories810Kifer Road,Sunnyvale,CA
Co-Chairs:MichaelCurrent,CurrentScientificJohnBorland,JOBTechnologies
SPONSORS:AXCELISTECHNOLOGIESandINTEVAC
Diversetopics:Materials,DopingandSystemsforPV,NewMetrologiesforGaN,ImplantApplicationsforNewICApps.
JTG:Oct20,2017
IonImplantationTechnology-2018:Wurzburg,Bavaria
MichaelCurrentOct20,[email protected] 2
Openingregistration:May1,2018Abstractsubmissiondeadline:May18,2018Notificationofpaperacceptance:July2,2018Earlyregistrationdeadline:July14,2018Fullpapersubmissiondeadline:September14,2018
Venue: Hotel Maritim Würzburg / Conference Center Würzburg
School: September 13 – 15, 2018Conference: September 16 – 21, 2018
https://www.iit2018.org/
Chairman:Prof.Lothar Frey,IISB,Erlangen
JTG:Oct20,2017
Topics:IonImplantationTechnology-2018
MichaelCurrentOct20,[email protected] 3
1.Equipment forIonImplantation,Annealing,andMetrologyToolsforadvancedbeamlineionimplantationToolsforplasmadoping,cluster,andmolecularionbeamsEquipmentforthermalanda-thermalannealing(laser,microwave,flash,neutralbeams,etc.)Equipmentformetrologyofimplantationcontrol(particles,contamination,charging,etc.)andimplantedlayersAdvancedprocesscontrol(toolsoftwareassisted,fabsolutions,“toolhealthfactors”)2.IonImplantationandAnnealingProcess forSemiconductorMaterialsIonimplantationandannealingofSi,Ge,SiC,GaN andotherIII-Vsemiconductors,graphene,etc.Newdopingtechniques:monolayerdoping(MLD),atomiclayerdeposition(ALD),selectiveCVD/epi,MOCVD,laser-assisteddoping,Ion-assistedmethodsforadvancedphotovoltaicdevicesandphotonenergy-shiftinglayers,etc.Layertransferforheterogeneousmaterialsintegration,3DICstacking,etc.3.IonImplantationandAnnealingProcess forNon-SemiconductorMaterialsEtchratecontrol,Dielectricconstantmodification,Photoresiststabilizationformulti-exposurelithography,etc.Biotechnology:processingofbio-compatiblesurfacesandinterfaces,fabricationofDNA-scalesensorsandbio-activedevices,etc.4.IonImplantationProcess forPower,LED,IoT and PhotonicDevicesPowerandRFdevices(Si,Ge,SiC,GaN,etc.)Large-areadevices(displays,solarcells,wearables,etc.),LEDs,MEMS,imagesensors,chemicalandphysicalsensors,etc.JunctioncontactandmetalgateworkfunctionengineeringPhotonicdevices:CMOS-photonicintegration,materialsformulti-dimensionalphotonicsignalprocessingandtransmission,Nano-scaledevicefabricationforquantumconfinedfilms,wiresanddots,quantuminformationprocessing,etc.Metrologymethods:elemental,electrical,andmorphologicalanalysisof3Ddevices,junctions,strain,interfacesandcontacts,etc..5.Modelingand SimulationNon-mainstreamionimplantationmethods(usingplasma,highenergyions,atomicclusters,ionbeammixing,etc.)IonimplantationintonovelandexoticmaterialsordevicestructuresDefectgenerationSputteringandsurfacemodificationduetoionirradiation
