DAT TGA2573 Rev-A · The TGA2573 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Lead-free and RoHS compliant Part No. Bond Pad # Symbol 1 RF

TGA2573 2-18 GHz 10 Watt GaN Amplifier

The information contained in this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited.

Preliminary Data Sheet: Rev. A 6/23/11 - 1 of 16 - Disclaimer: Subject to change without notice

© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®

Applications

• Military Radar

• Communications

• Electronic warfare

• Electronic counter measures

• Test Equipment

Product Features Functional Block Diagram

• Frequency Range: 2 – 18 GHz

• Psat: 40.0 dBm at Vd=30 V

• PAE: 25% typical

• Small Signal Gain: 9 dB

• Return Loss: 15 dB

• Bias: Vd = 30 V, Idq = 500 mA,

Vg = -3.4 V typical

• Technology: 0.25 µm GaN on SiC

• Dimensions: 2.55 x 5.54 x 0.1 mm

General Description Bond Pad Configuration

TriQuint’s TGA2573 is a wideband, high power GaN

HEMT amplifier fabricated on TriQuint’s production

0.25um GaN on SiC process. Operating from 2 to 18

GHz, it achieves 40 dBm saturated output power, 25%

PAE and 9 dB small signal gain at a drain bias of 30

volts.

Fully matched to 50 ohms and with integrated DC

blocking caps on both RF ports, the TGA2573 is ideally

suited to support both commercial and defense related

applications.

The TGA2573 is 100% DC and RF tested on-wafer to

ensure compliance to performance specifications.

Lead-free and RoHS compliant

Bond Pad # Symbol 1 RF In

2 Vd

3 RF Out

4 Vg

Ordering Information

Part No. ECCN Description TGA2573 XI(c) GaN on SiC Die

Vg

TGA2573

RF

InRF

Out

Vd

1

2

4

3





Specifications

Absolute Maximum Ratings

Parameter Rating Drain Voltage,Vd 40 V 2/

Gate Voltage,Vg -8 to 0 V

Drain to Gate Voltage, Vd - Vg 80 V

Drain Current, Id 1.3 A 1/ 2/

Gate Current, Ig -4 to 11 mA

Power Dissipation, Pdiss 30 W

RF Input Power, CW, 50Ω,T = 25ºC 35 dBm 2/

Channel Temperature, Tch 250 °C

Mounting Temperature

(30 Seconds) 320 °C

Storage Temperature -40 to 150 °C

1/ Continuous operation at currents above 1.0 Amp will

reduce lifetime independent of junction temperature.

Contact TriQuint for more information.

2/ At certain frequencies, Id can exceed 1.0 A for Pin ≥ 33

dBm and Vd ≥ 30V.

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress

ratings only, and functional operation of the device at these

conditions is not implied.

Recommended Operating Conditions

Parameter Min

Typical Max Unit

s Vd 30 V

Idq 500 mA

Id_drive (Under RF

Drive)

650-1100

1/ mA

Vg -3.4 V

1/ Continuous operation at currents above 1.0 Amp will reduce

lifetime independent of junction temperature. Contact TriQuint for

more information.

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25ºC, Vd = 30 V, Idq = 500 mA, Vg = -3.4 V Typical.

Parameter Min Typical Max Units Operational Frequency Range 2 18 GHz

Small signal gain 9 dB

Input Return Loss 15 dB

Output Return Loss 15 dB

Output Power @ Saturation 40.0 dBm





Specifications (cont.)

Thermal and Reliability Information

Parameter Condition Rating Thermal Resistance, θJC, backside of die l/ Tbase = 70 °C θJC = 4.9 °C/W

Channel Temperature (Tch), and Median Lifetime (Tm) Tbase = 70 °C, Vd = 30 V, Idq = 500

mA, Pdiss = 15 W

Tch = 144 °C

Tm = 1.2E+8 Hours

Channel Temperature (Tch), and Median Lifetime (Tm)

Under RF Drive

Tbase = 70 °C, Vd = 30 V, Id = 1100

mA, Pin=35 dBm, Pout=40dBm,

Pdiss = 26.2W

Tch = 198 °C

Tm = 1.7E+6 Hours

Channel Temperature (Tch), and Median Lifetime (Tm)

Under RF Drive

Tbase = 70 °C, Vd = 35 V, Id = 1250

mA, Pin=35 dBm, Pout=41.5dBm,

Pdiss = 32.8W

Tch = 231 °C

Tm = 2.0E+5 Hours

1/ Assumes eutectic attach of die using 1.5 mil thick 80Au/20Sn to a 40 mil thick 80Mo/20Cu carrier.

1E+04

1E+05

1E+06

1E+07

1E+08

1E+09

1E+10

1E+11

1E+12

1E+13

1E+14

1E+15

25 50 75 100 125 150 175 200 225 250 275

Media

n L

ifetim

e,

Tm

(H

ours

)

Channel Temperature, Tch (°C)

Median Lifetime (Tm) vs. Channel Temperature (Tch)

FET7 0

25

50

75

100

125

150

175

25 26 27 28 29 30 31 32 33 34 35

Channel Tem

pera

ture

Ris

e (

°C)

Input Power (dBm)

Average Channel Temperature Rise vs. Input Power vs. Freq.Vd = 25 V, Idq = 0.5 A, Vg = -3.4 V Typical

2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHzVd = 25 V

0

25

50

75

100

125

150

175

25 26 27 28 29 30 31 32 33 34 35

Ch

annel Tem

pera

ture

Ris

e (

°C)

Input Power (dBm)


2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHzVd = 30 V

0

25

50

75

100

125

150

175

25 26 27 28 29 30 31 32 33 34 35

Ch

annel Tem

pera

ture

Ris

e (

°C)

Input Power (dBm)


2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHzVd = 35 V





Typical Performance

0

5

10

15

20

25

30

35

1 3 5 7 9 11 13 15 17 19 21

IRL a

nd O

RL (

dB

)

Frequency (GHz)

Return Loss vs. FrequencyVd = 25 V, Idq = 0.5 A, Vg = -3.4 V, 25 °C

IRL

ORL

0

2

4

6

8

10

12

1 3 5 7 9 11 13 15 17 19 21

Gain

(dB

)

Frequency (GHz)

Gain vs. FrequencyVd = 30 V, Idq = 0.5 A, Vg = -3.4 V, 25 °C

0

5

10

15

20

25

30

35

1 3 5 7 9 11 13 15 17 19 21

IRL a

nd O

RL (

dB

)

Frequency (GHz)


IRL

ORL

0

2

4

6

8

10

12

1 3 5 7 9 11 13 15 17 19 21

Gain

(dB

)

Frequency (GHz)


Vd = 30 V

Vd = 35 V

Vd = 25 V

0

2

4

6

8

10

12

1 3 5 7 9 11 13 15 17 19 21

Gain

(dB

)

Frequency (GHz)


0

5

10

15

20

25

30

35

1 3 5 7 9 11 13 15 17 19 21

IRL a

nd O

RL (

dB

)

Frequency (GHz)


IRL

ORL





Typical Performance (cont.)

36

37

38

39

40

41

42

1 3 5 7 9 11 13 15 17 19

Outp

ut P

ow

er

(dB

m)

Frequency (GHz)

Output Power vs. Freq. vs. Input PowerVd = 30 V, Id = 0.5 A, Vg = -3.4 V Typical, +25°C

35dBm

34dBm

33dBm

32dBm

31dBm

30dBm

36

37

38

39

40

41

42

1 3 5 7 9 11 13 15 17 19

Outp

ut P

ow

er

(dB

m)

Frequency (GHz)


35dBm

34dBm

33dBm

32dBm

31dBm

30dBm

32

33

34

35

36

37

38

39

40

41

42

1 3 5 7 9 11 13 15 17 19

Outp

ut P

ow

er

(dB

m)

Frequency (GHz)

Output Power vs. Freq. vs. Temp.Vd = 30 V, Id = 0.5 A, Vg = -3.4 V Typical

+35 dBm Pin, +25 deg C


36

37

38

39

40

41

42

1 3 5 7 9 11 13 15 17 19

Outp

ut P

ow

er

(dB

m)

Frequency (GHz)


35dBm

34dBm

33dBm

32dBm

31dBm

30dBm32

33

34

35

36

37

38

39

40

41

42

1 3 5 7 9 11 13 15 17 19

Outp

ut P

ow

er

(dB

m)

Frequency (GHz)






Vd = 30 V

Vd = 35 V

Vd = 25 V

32

33

34

35

36

37

38

39

40

41

42

1 3 5 7 9 11 13 15 17 19

Outp

ut P

ow

er

(dB

m)

Frequency (GHz)









15

20

25

30

35

40

1 3 5 7 9 11 13 15 17 19

% P

ow

er

Add

ed E

ffic

iency

Frequency (GHz)

PAE vs. Freq. vs. Input PowerVd = 30 V, Idq = 0.5 A, Vg = -3.4 V Typical, +25°C

35dBm

34dBm

33dBm

32dBm

31dBm

30dBm

15

20

25

30

35

40

1 3 5 7 9 11 13 15 17 19

% P

ow

er

Add

ed E

ffic

ien

cy

Frequency (GHz)


35dBm

34dBm

33dBm

32dBm

31dBm

30dBm

15

20

25

30

35

40

1 3 5 7 9 11 13 15 17 19

% P

ow

er

Added

Eff

icie

ncy

Frequency (GHz)

PAE vs. Freq. vs. Temp.Vd = 25 V, Idq = 0.5 A, Vg = -3.4 V Typical

35 dBm Pin, +25 deg C


15

20

25

30

35

40

1 3 5 7 9 11 13 15 17 19

% P

ow

er

Added

Eff

icie

ncy

Frequency (GHz)




15

20

25

30

35

40

1 3 5 7 9 11 13 15 17 19

% P

ow

er

Add

ed E

ffic

iency

Frequency (GHz)


35dBm

34dBm

33dBm

32dBm

31dBm

30dBm15

20

25

30

35

40

1 3 5 7 9 11 13 15 17 19

% P

ow

er

Added E

ffic

iency

Frequency (GHz)


35 dBm Pin, +25 deg C35 dBm Pin, +85 deg C33 dBm Pin, +25 deg C33 dBm Pin, +85 deg C

Vd = 30 V

Vd = 35 V

Vd = 25 V






0

5

10

15

20

25

30

35

40

45

25 27 29 31 33 35

% P

ow

er

Added E

ffic

iency

Input Power (dBm)

PAE vs. Input Power vs. Freq.Vd = 30 V, Idq = 0.5 A, Vg = -3.4 V Typical, +25°C

2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHz

0

5

10

15

20

25

30

35

40

45

25 27 29 31 33 35

% P

ow

er

Added E

ffic

iency

Input Power (dBm)


2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHz

0

5

10

15

20

25

30

35

40

45

25 27 29 31 33 35

% P

ow

er

Added E

ffic

iency

Input Power (dBm)

PAE vs. Input Power vs. Temp.Vd = 25 V, Idq = 0.5 A, Vg = -3.4 V Typical

10 GHz, +25 deg C

10 GHz, +85 deg C

0

5

10

15

20

25

30

35

40

45

25 27 29 31 33 35

% P

ow

er

Add

ed E

ffic

iency

Input Power (dBm)


2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHz

Vd = 30 V

Vd = 35 V

Vd = 25 V

0

5

10

15

20

25

30

35

40

45

25 27 29 31 33 35

% P

ow

er

Added E

ffic

iency

Input Power (dBm)


10 GHz, +25 deg C

10 GHz, +85 deg C

0

5

10

15

20

25

30

35

40

45

25 27 29 31 33 35

% P

ow

er

Added E

ffic

iency

Input Power (dBm)


10 GHz, +25 deg C

10 GHz, +85 deg C






0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40

Pow

er

Gain

(dB

)

Input Power (dBm)

Power Gain vs. Input Power vs. Freq.Vd = 30 V, Idq = 0.5 A, Vg = -3.4 V Typical, +25°C

2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHz

0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40

Pow

er

Gain

(dB

)

Input Power (dBm)


2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHz0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40

Pow

er

Gain

(dB

)

Input Power (dBm)

Power Gain vs. Input Power vs. Temp.Vd = 25 V, Idq = 0.5 A, Vg = -3.4 V Typical

10 GHz, +25 deg C

10 GHz, +85 deg C

0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40

Pow

er

Gain

(dB

)

Input Power (dBm)


10 GHz, +25 deg C

10 GHz, +85 deg C

0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40

Pow

er

Gain

(dB

)

Input Power (dBm)


2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHz

0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40

Pow

er

Gain

(dB

)

Input Power (dBm)


10 GHz, +25 deg C

10 GHz, +85 deg C

Vd = 30 V

Vd = 35 V

Vd = 25 V






0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 5 10 15 20 25 30 35 40

Dra

in C

urr

ent

(A

)

Input Power (dBm)

Drain Current vs. Input Power vs. Freq.Vd = 30 V, Idq = 0.5 A, Vg = -3.4 V Typical, +25°C

2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHz

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 5 10 15 20 25 30 35 40

Dra

in C

urr

ent

(A

)

Input Power (dBm)


2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHz

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 5 10 15 20 25 30 35 40

Dra

in C

urr

ent

(A

)

Input Power (dBm)

Drain Current vs. Input Power vs. Temp.Vd = 30 V, Idq = 0.5 A, Vg = -3.4 V Typical

6 GHz, +25 deg C

6 GHz, +85 deg C

10 GHz, +25 deg C

10 GHz, +85 deg C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 5 10 15 20 25 30 35 40

Dra

in C

urr

ent

(A

)

Input Power (dBm)


6 GHz, +25 deg C

6 GHz, +85 deg C

10 GHz, +25 deg C

10 GHz, +85 deg C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 5 10 15 20 25 30 35 40

Dra

in C

urr

ent

(A

)

Input Power (dBm)


2.0GHz

6.0GHz

10.0GHz

14.0GHz

18.0GHz

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 5 10 15 20 25 30 35 40

Dra

in C

urr

ent

(A

)

Input Power (dBm)


6 GHz, +25 deg C

6 GHz, +85 deg C

10 GHz, +25 deg C

10 GHz, +85 deg C

Vd = 30 V

Vd = 35 V

Vd = 25 V






-60

-50

-40

-30

-20

-10

0

10

20

30

40

50

0 5 10 15 20 25 30 35

Pou

t (d

Bm

)

Pin (dBm)

3 GHz Harmonics vs. Input Power vs. Freq.Vd = 35 V, Idq = 0.5 A, Vg = -3.4 V Typical, +85°C

Fundamental - 3 GHz

Second Harmonic -6 GHz

Third Harmonic - 9 GHz

Fourth Harmonic - 12 GHz

Fifth Harmonic - 15 GHz-60

-50

-40

-30

-20

-10

0

10

20

30

40

50

0 5 10 15 20 25 30 35

Po

ut

(dB

m)

Pin (dBm)

10 GHz Harmonics vs. Input Power vs. Freq.Vd = 35 V, Idq = 0.5 A, Vg = -3.4 V Typical, +85°C

Fundamental - 10 GHz

Second Harmonic -20 GHz

Third Harmonic - 30 GHz

Fourth Harmonic - 40 GHz

Vd = 35 V

40

41

42

43

44

45

46

47

0 5 10 15 20 25

Avera

ge

Ou

tput

TO

I (d

Bm

)

Average Input Power Per Tone (dBm)

Output TOI vs. Input Power vs. Freq. Vd = 35 V, Idq = 0.5 A, Vg = -3.4 V Typical, +25 C

2 GHz

6 GHz

10 GHz

14 GHz

18 GHz

Vd = 35 V Vd = 30 V

40

41

42

43

44

45

46

47

0 5 10 15 20 25

Avera

ge

Ou

tput

TO

I (d

Bm

)

Average Input Power Per Tone (dBm)

Output TOI vs. Input Power vs. Freq. Vd = 30 V, Idq = 0.5 A, Vg = -3.4 V Typical, +25 C

2 GHz

6 GHz

10 GHz

14 GHz

18 GHz

Vd = 35 V

0

1

2

3

4

5

6

7

1 3 5 7 9 11 13 15 17 19

Nois

e F

igure

(dB

)

Frequency (GHz)

Noise Figure vs. Freq. vs. Drain VoltageIdq = 0.5 A, Vg = -3.4 V Typical, +25 C

Vd = 30V

Vd = 35V





Application Circuit

Bias-up Procedure Bias-down Procedure Vg set to -6.0 V Turn off RF signal

Vd set to +30 V Reduce Vg to -6.0 V. Ensure Id ~ 0 mA

Adjust Vg more positive until quiescent Id is 500 mA.

This will be ~ Vg = -3.4 V Set Vd to 0 V

Apply RF signal to RF Input Set Vg to 0 V

1/ Additional bypass capacitors may be required at this location. The value of these capacitors varies by application. Variables

include power supply impedance, power supply stability with reactive loads, and the inductance from the power supply to this

assembly. One to 47 uF tantalum capacitors are commonly used here.

Vg

TGA2573

RF

InRF Out

Vd

0.01 µµµµ F 1000 pF

1000 pF

10 µ µ µ µ F 1/

10 µ µ µ µF 1/

1

2

4

3





Bond Pad Description

Bond Pad Symbol Description 1 RF In Input, matched to 50 ohms

2 Vd Drain voltage

3 RF Out Output, matched to 50 ohms

4 Vg Gate voltage

GND Backside of die

32

4

1





Assembly Drawing

1/ See ‘Application Circuit’ Note 1

Bill of Material

Ref Des Value Description Manufacturer Part Number C1, C2 1000 pF Cap, 50V, 10%, Single Layer various

C3 0.01 uF Cap, 50V, 10%, SMD various

Vd

Vg

RF In Z0=50 ohms

RF Out Z0=50 ohms

C2

C1

C3

1/

1/





Mechanical Information

Unit: millimeters

Thickness: 0.10

Die x, y size tolerance: +/- 0.050

Chip edge to bond pad dimensions are shown to center of pad

Ground is backside of die

32 0.1790.442

5.5

40

2.5502.367

5.3

15

3.6

30

5.1

88

4

0.0

00

0.1

81

0.000

0.7201

Bond Pad Symbol Pad Size 1 RF In 0.100 x 0.195

2 Vd 0.400 x 0.100

3 RF Out 0.200 x 0.195

4 Vg 0.110 x 0.100





Product Compliance Information

ESD Information

ESD Rating: TBD

Value: TBD

Test: Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

Solderability

This part is compliant with EU 2002/95/EC RoHS

directive (Restrictions on the Use of Certain Hazardous

Substances in Electrical and Electronic Equipment).

This product also has the following attributes:

• Lead Free

• Halogen Free (Chlorine, Bromine)

• Antimony Free

• TBBP-A (C15H12Br402) Free

• PFOS Free

• SVHC Free

ECCN

US Department of State XI(c)

Assembly Notes

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

Reflow process assembly notes:

• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.

• Do not use any kind of flux.

• Coefficient of thermal expansion matching is critical for long-term reliability.

• In order to achieve the advertised performance and to maintain reliability of the product, it is necessary for

the solder attach to cover >90% for each of the active areas. An active area is defined as a single unit cell.

This is critical given the high power dissipation associated with GaN power amplifiers. Total die area

should not exceed 10% voiding.

• Devices must be stored in a dry nitrogen atmosphere.

Interconnect process assembly notes:

• Thermosonic ball bonding is the preferred interconnect technique.

• Force, time, and ultrasonics are critical parameters.

• Aluminum wire should not be used.

• Devices with small pad sizes should be bonded with 0.0007-inch wire.





Contact Information

For the latest specifications, additional product information, worldwide sales and distribution locations, and information about

TriQuint:

Web: www.triquint.com Tel: +1.972.994.8465 Email: [email protected] Fax: +1.972.994.8504 For technical questions and application information: Email: [email protected]

Important Notice

The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained

herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint

assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained

herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with

the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest

relevant information before placing orders for TriQuint products. The information contained herein or any use of such

information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property

rights, whether with regard to such information itself or anything described by such information.

TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining

applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

Documents

DAT TGA2573 Rev-A · The TGA2573 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Lead-free and RoHS compliant Part No. Bond Pad # Symbol 1 RF