Corial 300Corial 300

COSMA Software withCOSMA Software with:: Edit menu for process recipe edition,Edit menu for process recipe edition,

Adjust menu for process optimizing,Adjust menu for process optimizing,

Maintenance menus for complete equipment Maintenance menus for complete equipment

control via internet with VPN (Virtual Private control via internet with VPN (Virtual Private

Network).Network).CORS Software forCORS Software for:: Data reprocessing (Measures and data Data reprocessing (Measures and data

comparison).comparison).

Equipment Control & SoftwareEquipment Control & Software

A Tool Organized in A Tool Organized in Successive LevelsSuccessive Levels

ActionActionss

ConstructorConstructor

LotsLotsActionsActions

ProcessProcess

Closed-loopClosed-loop

Server for Server for GUIGUI

COSMA COSMA SupervisorSupervisor

Embedded Embedded control PUcontrol PU

Embedded Embedded control control functionfunction

COSMA COSMA ControllerController

Process Process ControllerController

Device Device ControllersControllers

Physical Physical devicesdevices

OperatorOperator

Remote GUIRemote GUI

PC UserPC User

MonitorinMonitoringg

MonitorinMonitoringg

MonitorinMonitoringg

Diagram ModesDiagram Modes

Stand-byStand-byModeMode

Step by stepStep by step

ModeMode

ProductionProductionModeMode

OptimizationOptimizationModeMode

ConstructorConstructorModeMode

Shut downShut downModeMode

NormalNormal

ErrorsErrors

OperatorOperator

ProductionProduction

MaintenanceMaintenance

ConstructorConstructor

A Communicant ToolA Communicant Tool

COSMA COSMA SupervisorSupervisor

COSMACOSMAGUIGUI

Customer Customer Ethernet NetworkEthernet Network

Process Process Control Unit Control Unit

(1)(1)

Process Process Control Unit Control Unit

(2)(2)

Device Device Control (1)Control (1)

EthernetEthernet

Device Device Control (2)Control (2)

EthernetEthernet

WANWAN

VPNVPNADSLADSLFix IPFix IP

FirewalFirewalll

DedicatedDedicatedEthernet Ethernet networknetwork

Pumping SystemPumping System

TMPTMP

TVTV

ReactorReactor

Dry PumpDry PumpADP 122ADP 122

RIE ReactorRIE Reactor

Automatic Automatic Match BoxMatch Box

RF GeneratorRF Generator

Pumping gridPumping grid

Bottom ElectrodeBottom Electrode

PumpPump

New RIE New RIE designed to achieve highly uniform designed to achieve highly uniform delayering for delayering for 300 mm wafer yield analysis:300 mm wafer yield analysis:

Symmetrical reactor design to reduce ion Symmetrical reactor design to reduce ion bombardment on the powered electrode (cathode),bombardment on the powered electrode (cathode),

Etching with thick insulator on the cathode to reduce Etching with thick insulator on the cathode to reduce ion bombardment.ion bombardment.

Real time access to the following plasma modes:Real time access to the following plasma modes: High Pressure Reactive Ion Etching (Isotropic),High Pressure Reactive Ion Etching (Isotropic),

Low Pressure Reactive Ion Etching (Anisotropic).Low Pressure Reactive Ion Etching (Anisotropic).

Reactor FeaturesReactor Features

ProcessProcess UnderlayerUnderlayer Etch RateEtch Rate(nm/min)(nm/min) SelectivitySelectivity

PolyimidePolyimide

Si3N4Si3N4

SiO2SiO2

Si3N4Si3N4

SiO2SiO2

SiO2SiO2

>50>50

33

11

200200

120120

4040

Some Process SpecificationsSome Process Specifications

UniformityUniformity

±5%±5%

±5%±5%

±3%±3%

The latest submicron technology needs precise delayering:The latest submicron technology needs precise delayering: Automatic endpoint detection,Automatic endpoint detection, CCD camera with magnification > 120 X,CCD camera with magnification > 120 X, Laser beam diameter ≤ 20 Laser beam diameter ≤ 20 m.m.

Preventing OveretchPreventing Overetch

A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

Interferences lead to a periodic signal having a Interferences lead to a periodic signal having a /2n period versus /2n period versus timetime

InterferencesInterferences

PhotodiodePhotodiode

Laser Endpoint DetectionLaser Endpoint Detection

Reflected beam Reflected beam 11

Interface 1Interface 1

UnderlayerUnderlayerInterface 2Interface 2 Refractive Index Refractive Index

= n= n

TimeTime

Sig

nal

Sig

nal

Laser beamLaser beam

Reflected beam Reflected beam 22

Laser Endpoint DetectionLaser Endpoint Detection

Al

Si3N4

SiO2

Si

Laser Laser beambeam

AlSiO2

Si

Laser Laser beambeam

Laser Laser beambeam

AlSiO2

Si

Al reflects the laser, there is no interference effect.

New RIE reactorNew RIE reactor to achieve to achieve highly uniform highly uniform delayeringdelayering for for 300 mm wafer yield analysis,300 mm wafer yield analysis,

Wide process rangeWide process range from isotropic to anisotropic, from isotropic to anisotropic,

CleanClean etching, etching,

Low metal erosion (Low metal erosion (low damagelow damage).).

Recap of Corial Recap of Corial 300300 Features Features