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Copyright 2005 , Agrawal & Bu shnell VLSI Test: Lecture 19al t 1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) Definition Faults detected by I DDQ tests Weak fault Leakage fault Sematech and other studies Delta I DDQ testing Built-in current (BIC) sensor Summary

Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

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Page 1: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 1

Lecture 19altIDDQ Testing

(Alternative for Lectures 21 and 22)

Lecture 19altIDDQ Testing

(Alternative for Lectures 21 and 22) Definition Faults detected by IDDQ tests Weak fault Leakage fault Sematech and other studies Delta IDDQ testing Built-in current (BIC) sensor Summary

Page 2: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 2

Basic Principle of IDDQ Testing

Basic Principle of IDDQ Testing

Measure IDDQ current through Vss bus

Page 3: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 3

NAND Open Circuit Defect – Floating gate

NAND Open Circuit Defect – Floating gate

Page 4: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 4

Floating Gate DefectsFloating Gate Defects

Small break in logic gate inputs (100 – 200 Angstroms) lets wires couple by electron tunneling Delay fault and IDDQ fault

Large open results in stuck-at fault – not detectable by IDDQ test

If Vtn < Vfn < VDD - | Vtp | then

detectable by IDDQ test

Page 5: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 5

Delay FaultsDelay Faults

Many random CMOS defects cause a timing delay fault, not catastrophic failure

Some delay faults detected by IDDQ test –

late switching of logic gates keeps IDDQ

elevated Delay faults not detected by IDDQ test

Resistive via fault in interconnect Increased transistor threshold voltage

fault

Page 6: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

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VLSI Test: Lecture 19alt 6

Weak FaultsWeak Faults

nFET passes logic 1 as 5 V – Vtn

pFET passes logic 0 as 0 V + |Vtp|

Weak fault – one device in C-switch does not

turn on

Causes logic value degradation in C-switch

Page 7: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 7

Weak Fault Detection Weak Fault Detection Fault not detected unless I3 = 1

Page 8: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 8

Leakage FaultLeakage Fault Leakage between bulk (B), gate (G), source (S)

and drain (D) Leakage fault table for an MOS component:

k = number of component I/O pins n = number of component transistors m = 2k (number of I/O combinations) m x n matrix M represents the table Each I/O combination is a matrix row Entry mi j = octal leakage fault information:

Flags fBG fBD fBS fSD fGD fGS

Sub-entry mi j = 1 if leakage fault detected

Page 9: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 9

Leakage Fault TableLeakage Fault Table

Page 10: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 10

IDDQ Vector SelectionIDDQ Vector Selection Characterize each logic component using

switch-level simulation – relate input/output logic values & internal states to: leakage fault detection weak fault sensitization and propagation

Store information in leakage and weak fault tables

Generate complete stuck-at fault tests Logic simulate stuck-at fault tests – use

tables to find faults detected by each vector to select vectors for current measurement

Page 11: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 11

Com-pany

HP

San-dia

Reject ratio(%)

Without IDDQ

With IDDQ

Without IDDQ

With IDDQ

Neither

16.460.80

OnlyFunct.6.360.09

OnlyScan6.040.11

Both

5.800.00

Functional Tests5.562

0

Scan and Functional Tests

HP and Sandia Lab DataHP and Sandia Lab Data HP – static CMOS standard cell, 8577 gates, 436 FF Sandia Laboratories – 5000 static RAM tests Reject ratio (%) for various tests:

Page 12: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 12

Failure Distribution in Hewlett-Packard ChipFailure Distribution in Hewlett-Packard Chip

Page 13: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 13

Sematech StudySematech Study IBM Graphics controller chip – CMOS ASIC,

166,000 standard cells 0.8 m static CMOS, 0.45 m Lines (Leff), 40

to 50 MHz Clock, 3 metal layers, 2 clocks Full boundary scan on chip Tests:

Scan flush – 25 ns latch-to-latch delay test 99.7 % scan-based stuck-at faults (slow

400 ns rate) 52 % SAF coverage functional tests

(manually created) 90 % transition delay fault coverage tests 96 % pseudo-stuck-at fault cov. IDDQ Tests

Page 14: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 14

Sematech ResultsSematech Results Test process: Wafer Test Package Test Burn-In & Retest Characterize & Failure

Analysis Data for devices failing some, but not all, tests.

passpassfailfail

pass

14652

pass

pass60136fail

fail14633413

1251pass

fail718

fail

passfail

passfail

Scan

-based

Stu

ck-a

t

IDDQ (5 A limit)

Functional

Scan

-based

dela

y

Page 15: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 15

Sematech ConclusionsSematech Conclusions Hard to find point differentiating good and

bad devices for IDDQ & delay tests

High # passed functional test, failed all others High # passed all tests, failed IDDQ > 5 A

Large # passed stuck-at and functional tests Failed delay & IDDQ tests

Large # failed stuck-at & delay tests Passed IDDQ & functional tests

Delay test caught failures in chips at higher temperature burn-in – chips passed at lower temperature

Page 16: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 16

% Functional Failures After 100 Hours Life Test

% Functional Failures After 100 Hours Life Test

Work of McEuen at Ford Microelectronics

Page 17: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 17

Current Limit SettingCurrent Limit Setting Should try to get it < 1 A Histogram for 32 bit microprocessor

Page 18: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 18

Difference in HistogramsDifference in Histograms A – test escapes, B – yield loss

Page 19: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 19

Delta IDDQ Testing (Thibeault)

Delta IDDQ Testing (Thibeault)

Use derivative of IDDQ at test vector i as

current signatureΔIDDQ (i) = IDDQ (i) – IDDQ (i – 1)

Leads to a narrower histogram Eliminates variation between chips and

between wafers Select decision threshold Δdef to minimize

probability of false test decisions

Page 20: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 20

|IDDQ| and |IDDQ||IDDQ| and |IDDQ|

Page 21: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 21

Setting ThresholdSetting Threshold

IDDQ ΔIDDQMean (good chips) 0.696 μA -2×10-4 μA

Mean (bad chips) 1.096 μA 0.4 μA

Variance 0.039 (μA)2 0.004 (μA)2

Δdef Error Prob. Error Prob.

0.3 0.059 7.3×10-4

0.4 0.032 4.4×10-5

0.5 0.017 1.7×10-6

Page 22: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 22

IDDQ Built-in Current Testing – Maly and Nigh

IDDQ Built-in Current Testing – Maly and Nigh

Build current sensor into ground bus of device-under-test

Voltage drop device & comparator

Compares virtual ground VGND with Vref at

end of each clock – VGND > Vref only in bad

circuits

Activates circuit breaker when bad device found

Page 23: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 23

Conceptual BIC SensorConceptual BIC Sensor

Page 24: Copyright 2005, Agrawal & BushnellVLSI Test: Lecture 19alt1 Lecture 19alt I DDQ Testing (Alternative for Lectures 21 and 22) n Definition n Faults detected

Copyright 2005, Agrawal & Bushnell

VLSI Test: Lecture 19alt 24

SummarySummary IDDQ test is used as a reliability screen

Can be a possible replacement for expensive burn-in test

IDDQ test method has difficulties in testing of sub-

micron devices Greater leakage currents of MOSFETs

Harder to discriminate elevated IDDQ from 100,000

transistor leakage currents

IDDQ test may be a better choice

Built-in current (BIC) sensors can be useful