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Confocal Microscopy of Electronic Devices James Saczuk Consumer Optical Electronics EE594 02/22/2000

Confocal Microscopy of Electronic Devices James Saczuk

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Page 1: Confocal Microscopy of Electronic Devices James Saczuk

Confocal Microscopy of Electronic Devices

James Saczuk

Consumer Optical ElectronicsEE594

02/22/2000

Page 2: Confocal Microscopy of Electronic Devices James Saczuk

Introduction

? Review of confocal principles? Why is CM used to examine electronics?? Several methods of CM are used, what are they?? What kind of data is gathered and what analysis

can be performed on it?? What is new in the field of CM?? Conclusions

Page 3: Confocal Microscopy of Electronic Devices James Saczuk

Confocal Microscopy Basics

? CM is used to produce high resolution, three dimensional images of specimens of various thickness.

? How does it work, what resolution can we achieve?

More

Page 4: Confocal Microscopy of Electronic Devices James Saczuk

Confocal Microscopy Optics Patent Diagram

Minsky (US Patent 03013467)

Page 5: Confocal Microscopy of Electronic Devices James Saczuk

Design Rules for Target Resolution

? Confocal lateral resolution is related to the lateral resolution of the objective lens, which is a function of a NA, the confocal pinhole size and the wavelength of the projected light by the equation:

? As the pinhole size approaches ? , the resolution improves by a factor of ?2.

Page 6: Confocal Microscopy of Electronic Devices James Saczuk

Why use C.M. to Characterize Electronics ?

?Non-intrusive, thus non-destructive.?Provide a method to correlate electrical and

tomographical data.?Viewing of switching events at the

materials level.?Establish fault conditions with great

precision for failure analysis.

Page 7: Confocal Microscopy of Electronic Devices James Saczuk

Methods of Confocal Microscopy

? LASER Scanning

? Fluorescence Mapping

? Single and Multi-Photon Optical Beam Induced Current Mapping

? Near Field OBIC Imaging

? Future Technologies

Page 8: Confocal Microscopy of Electronic Devices James Saczuk

LASER Scanning Confocal Microscopy

? LASER sources:– Ar+ 488/514nm– Solid State 523nm– HeNe 633nm

?Source is selected based on the specimen’s properties to be examined.

?Long pass filter in detector used to protect operator.

Page 9: Confocal Microscopy of Electronic Devices James Saczuk

LASER Scanning C.M. Optical Schematic

Page 10: Confocal Microscopy of Electronic Devices James Saczuk

LASER Scanning C.M. System Diagram

Page 11: Confocal Microscopy of Electronic Devices James Saczuk

CM Scanning versus Wide Field Microscopy

Page 12: Confocal Microscopy of Electronic Devices James Saczuk

Simplified Scan of 2D Specimen with S.M.

Page 13: Confocal Microscopy of Electronic Devices James Saczuk

Data from 3D S.M. Compiled for Viewing

Page 14: Confocal Microscopy of Electronic Devices James Saczuk

LSCM Image of LEPSi Wafer

· 200x200µm field of view· Imaged at 488nm, emission above 550nm

Page 15: Confocal Microscopy of Electronic Devices James Saczuk

Fluorescence Mapping

? Light source is selected to support fluorescence of the material being observed, and/or the fluorophore added to the sample.

? The use of ultrafast lasers, optical parametric oscillators and optical parametric amplifiers provide for fluorescence imaging without the addition of dyes, stains or other fluorophores.

? Typically a mode locked Ti:Sapphire LASER is used at IR wavelengths.

Page 16: Confocal Microscopy of Electronic Devices James Saczuk

Fluorescence Process

Photons excite the electrons of afluorophore to a higher energy level.As these electrons descend to a lowlevel they emit photons of a shorterwavelength than the excitation

Emission spectra andexcitation spectra forcommon fluorescence

Page 17: Confocal Microscopy of Electronic Devices James Saczuk

Fluorescence Mapping Analysis

? Fluorophore Emission Table

Page 18: Confocal Microscopy of Electronic Devices James Saczuk

LSCM Fluorescence Image of LEPSi Wafer

Light-Emitting Porous Silicon wafer excited at 488 nm, emission above 550 nm

7.5x7.5mm field of view

Page 19: Confocal Microscopy of Electronic Devices James Saczuk

Optical Beam Induced Current

? Uses apparatus similar to conventional LSCM? 1, 2 and 3 photon OBIC? LASER sources are 633 and 1152nm HeNe? New techniques use 120fs pulse, 80MHz

repetition rate, tunable, mode locked Ti:Sapphire lasers (Spectra-Physics, Opal)

? Imaging through the substrate of electronic devices allows examination for failure analysis without possible damage from decapsulation.

Page 20: Confocal Microscopy of Electronic Devices James Saczuk

Optical Beam Induced Current Apparatus

Page 21: Confocal Microscopy of Electronic Devices James Saczuk

Optical Beam Induced Current Capabilities

? Very low power, 1-10mW @ the focal point? Excellent response in highly doped

semiconductors where one photon absorption occurs below the bandgap of Si due to excess charge carriers.

? Long dwell time of the sample image, ~10µS, compared to ~1nS for others.

? Out of focus background current eliminated as compared to the one photon method

Page 22: Confocal Microscopy of Electronic Devices James Saczuk

Optical Beam Induced Current Samples

Page 23: Confocal Microscopy of Electronic Devices James Saczuk

Optical Beam Induced Current Samples

Page 24: Confocal Microscopy of Electronic Devices James Saczuk

Optical Beam Induced Current Samples

Page 25: Confocal Microscopy of Electronic Devices James Saczuk

Optical Beam Induced Current Samples

Page 26: Confocal Microscopy of Electronic Devices James Saczuk

Optical Beam Induced Current Samples

Vcc = 5 VDC

Vcc = 0 VDC

Page 27: Confocal Microscopy of Electronic Devices James Saczuk

Optical Beam Induced Current Samples

Page 28: Confocal Microscopy of Electronic Devices James Saczuk

Near Field OBIC Imaging

? Use a near field optical “probe” to sense and excite the specimen

? Tapered optical fibers are used as the probes ? Resolution can approach 10nm? A tunable Ar+ pumped Ti:Sapphire LASER is

used to provide optical excitation through the fiber? A scanning microscopy method that has evolved

from LSCM OBIC

Page 29: Confocal Microscopy of Electronic Devices James Saczuk

Near Field OBIC Imaging

Page 30: Confocal Microscopy of Electronic Devices James Saczuk

Near Field OBIC Imaging

Page 31: Confocal Microscopy of Electronic Devices James Saczuk

The Near Future...

? Confocal imaging of transparent objects ? Second harmonic generation

– limited to crystals & structured media

? Third harmonic generation – all materials generate 3rd harmonic light in the beam

waste when an excitation source (LASER) is tightly focused at a point in the material

– requires ultrafast pulses with ?>1µm– 3rd harmonic detection at 400nm for 1.2µm excitation

Page 32: Confocal Microscopy of Electronic Devices James Saczuk

Third Harmonic Generation

THG in a homogenous sampleshows the beam waste summingto zero because the 3rd harmonicson each side of the beam waste areexactly out of phase

Out of phase beam waste occurs near the interface betweenmaterials with different 3rd order susceptibilities or indicesof refraction. The interference patterns can be mapped toproduce a stereoscopic image of the specimen.

Page 33: Confocal Microscopy of Electronic Devices James Saczuk

Conclusions

? Confocal microscopy applications are developing steadily with the availability of cheaper, more user friendly, ultrafast laser systems.

? The technology and expertise to use these systems for electronic component characterization and failure analysis will be in demand as electronics continue to proliferate in the consumer market.

Page 34: Confocal Microscopy of Electronic Devices James Saczuk

References

? http://glu.ls.utsa.edu/CLSM/chpt2.html dzf? http://www.zeiss.com/micro/products/? http://www.science.uwaterloo.ca/physics/research/confocal/scapp.html#sc? http://photon.bu.edu/selim/papers/jqe-95/node1.html? http://www.cs.ubc.ca/spider/ladic/overview.html? http://www.chips.ibm.com:80/services/asg/capabilities/asweb07.html#obic