Al8 tors. but little definitive understanding is truly available. Here, the extent of band tailing and the role of this band tailing in electron transport have been estimated from the second-order correction to the surface subbands arising from the surface roughess induced random potential. Surface roughness parameters were determined from high resolution TEM pictures of the S-SO, interface and are found to be in reasonable agreement with earlier estimates. Calculations based upon these parameters indicate that band tailing is important at high inversion layer densities (2 lO’*/cm*). Surface Science I 13 (1982) 239-243 North-Holland Publishing Company 239 COMPUTER SIMULATION OF CONDUCTIVITY AND HALL EFFECT IN INHOMOGENEOUS INVERSION LAYERS Emil ARNOLD Philips L.&wutories. Briurclifj Munor, New York 10510, USA Received 8 July 1981; accepted for publication 25 August 19~1 A two-dimensional resistor network was used to simulate the conductivity and Hall effect in an inhomogeneous inversion layer. Two types of inhomogeneities were considered: Poisson-distributed conductivity fluctuations, and correlated inhomogeneities, forming elongated inclusions. The conductivity was found to be rather insensitive to the type of fluctuations chosen, but the Hall carrier concentration is strongly model-sensitive. The computer simulations are compared with experimental data and with the results of the effective medium theory. 244 Surface Science I I3 (1982) 244-248 THERMOELECTRIC POWER IN A DISORDERED TWO-DIMENSIONAL INTERACTING ELECTRON GAS C.S. TING Depurtment of Physics, University of Houston, Houston. Texas 77004, USA and A. HOUGHTON and J.R. SENNA Deportment of Physics, Brown Universit.v, Providence, Rhode Islund 02912, USA Received 17 June 1981; accepted for publication 24 August 1981 The thermoelectric power Q is evaluated in a two-dimensional disordered system with long range electron-electron interactions. Our approach here is based upon the method of Altshuler et al., and only the exchange diagram in the self energy is considered. The result at finite temperature is Q=Q,,[l -(1/27rEpr) ln(l/TT)], E, and 7 are the Fermi energy and relaxation time due to impurity scattering respectively. Qa =?r*T/3eE, is the thermoelectric power when the effect of electron-electron interactions is neglected. Here, e is the charge of an electron.

Computer simulation of conductivity and Hall effect in inhomogeneous inversion layers

Download PDF Report

Upload
emil-arnold
View
213
Download
1

Embed Size (px)

Citation preview

Page 1: Computer simulation of conductivity and Hall effect in inhomogeneous inversion layers

Al8

tors. but little definitive understanding is truly available. Here, the extent of band tailing and the

role of this band tailing in electron transport have been estimated from the second-order correction

to the surface subbands arising from the surface roughess induced random potential. Surface

roughness parameters were determined from high resolution TEM pictures of the S-SO, interface

and are found to be in reasonable agreement with earlier estimates. Calculations based upon these

parameters indicate that band tailing is important at high inversion layer densities (2 lO’*/cm*).

Surface Science I 13 (1982) 239-243

North-Holland Publishing Company 239

COMPUTER SIMULATION OF CONDUCTIVITY AND HALL EFFECT IN INHOMOGENEOUS INVERSION LAYERS Emil ARNOLD

Philips L.&wutories. Briurclifj Munor, New York 10510, USA

Received 8 July 1981; accepted for publication 25 August 19~1

A two-dimensional resistor network was used to simulate the conductivity and Hall effect in an

inhomogeneous inversion layer. Two types of inhomogeneities were considered: Poisson-distributed

conductivity fluctuations, and correlated inhomogeneities, forming elongated inclusions. The

conductivity was found to be rather insensitive to the type of fluctuations chosen, but the Hall

carrier concentration is strongly model-sensitive. The computer simulations are compared with

experimental data and with the results of the effective medium theory.

244 Surface Science I I3 (1982) 244-248

THERMOELECTRIC POWER IN A DISORDERED TWO-DIMENSIONAL INTERACTING ELECTRON GAS C.S. TING

Depurtment of Physics, University of Houston, Houston. Texas 77004, USA

and

A. HOUGHTON and J.R. SENNA

Deportment of Physics, Brown Universit.v, Providence, Rhode Islund 02912, USA

Received 17 June 1981; accepted for publication 24 August 1981

The thermoelectric power Q is evaluated in a two-dimensional disordered system with long

range electron-electron interactions. Our approach here is based upon the method of Altshuler et

al., and only the exchange diagram in the self energy is considered. The result at finite temperature

is Q=Q,,[l -(1/27rEpr) ln(l/TT)], E, and 7 are the Fermi energy and relaxation time due to impurity scattering respectively. Qa =?r*T/3eE, is the thermoelectric power when the effect of

electron-electron interactions is neglected. Here, e is the charge of an electron.