4
245 Dual IGBTMOD™ H-Series Module 300 Amperes/600 Volts CM300DY-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.70 94.0 B 3.150±0.01 80.0±0.25 C 1.89 48.0 D 1.18 Max. 30.0 Max. E 0.90 23.0 F 0.83 21.2 G 0.71 18.0 H 0.67 17.0 J 0.63 16.0 Dimensions Inches Millimeters K 0.51 13.0 L 0.47 12.0 M 0.30 7.5 N 0.28 7.0 P 0.256 Dia. Dia. 6.5 Q 0.26 6.5 R M5 Metric M5 S 0.16 4.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery (70ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY-12H is a 600V (V CES ), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating V CES Amperes Volts (x 50) CM 300 12 B C F D Q A S S G K L M E1 C1 E2 G1 E2 G2 C2E1 E E H H P - DIA. (2 TYP.) R - M5 THD (3 TYP.) N C2E1 J N J J C1 E2 G1 E1 E2 G2 .110 TAB

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  • 245

    Dual IGBTMODH-Series Module300 Amperes/600 Volts

    CM300DY-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

    Outline Drawing and Circuit Diagram

    Dimensions Inches Millimeters

    A 3.70 94.0B 3.1500.01 80.00.25C 1.89 48.0D 1.18 Max. 30.0 Max.E 0.90 23.0F 0.83 21.2G 0.71 18.0H 0.67 17.0J 0.63 16.0

    Dimensions Inches Millimeters

    K 0.51 13.0L 0.47 12.0M 0.30 7.5N 0.28 7.0P 0.256 Dia. Dia. 6.5Q 0.26 6.5R M5 Metric M5S 0.16 4.0

    Description:Powerex IGBTMOD Modulesare designed for use in switchingapplications. Each module consistsof two IGBT Transistors in ahalf-bridge configuration with eachtransistor having a reverse-connected super-fast recoveryfree-wheel diode. All componentsand interconnects are isolatedfrom the heat sinking baseplate,offering simplified system assem-bly and thermal management.Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery

    (70ns) Free-Wheel Diode High Frequency Operation

    (20-25kHz) Isolated Baseplate for Easy

    Heat SinkingApplications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power SuppliesOrdering Information:Example: Select the complete partmodule number you desire fromthe table below -i.e. CM300DY-12His a 600V (VCES), 300 AmpereDual IGBTMOD Power Module.Type Current Rating VCES

    Amperes Volts (x 50)

    CM 300 12

    B

    C

    FD

    Q

    A

    S

    S

    GK

    L

    M

    E1

    C1

    E2

    G1

    E2

    G2

    C2E1

    EE HH

    P - DIA. (2 TYP.)R - M5 THD (3 TYP.)

    N

    C2E1

    JN

    J J

    C1E2

    G1

    E1E2

    G2

    .110 TAB

  • 246

    CM300DY-12HDual IGBTMOD H-Series Module300 Amperes/600 Volts

    Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

    Absolute Maximum Ratings, Tj = 25 C unless otherwise specifiedRatings Symbol CM300DY-12H Units

    Junction Temperature Tj 40 to 150 CStorage Temperature Tstg 40 to 125 CCollector-Emitter Voltage (G-E SHORT) VCES 600 VoltsGate-Emitter Voltage VGES 20 VoltsCollector Current IC 300 AmperesPeak Collector Current ICM 600* AmperesDiode Forward Current IF 300 AmperesDiode Forward Surge Current IFM 600* AmperesPower Dissipation Pd 1100 WattsMax. Mounting Torque M5 Terminal Screws 17 in-lbMax. Mounting Torque M6 Mounting Screws 26 in-lbModule Weight (Typical) 270 GramsV Isolation VRMS 2500 Volts* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

    Static Electrical Characteristics, Tj = 25 C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max. Units

    Collector-Cutoff Current ICES VCE = VCES, VGE = 0V 1.0 mAGate Leakage Current IGES VGE = VGES, VCE = 0V 0.5 AGate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 VoltsCollector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V 2.1 2.8** Volts

    IC = 300A, VGE = 15V, Tj = 150C 2.15 VoltsTotal Gate Charge QG VCC = 300V, IC = 300A, VGS = 15V 900 nCDiode Forward Voltage VFM IE = 300A, VGS = 0V 2.8 Volts** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

    Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max. Units

    Input Capacitance Cies 30 nFOutput Capacitance Coes VGE = 0V, VCE = 10V, f = 1MHz 10.5 nFReverse Transfer Capacitance Cres 6 nFResistive Turn-on Delay Time td(on) 350 nsLoad Rise Time tr VCC = 300V, IC = 300A, 600 nsSwitching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 2.1 350 nsTimes Fall Time tf 300 nsDiode Reverse Recovery Time trr IE = 300A, diE/dt = 600A/s 110 nsDiode Reverse Recovery Charge Qrr IE = 300A, diE/dt = 600A/s 0.81 C

    Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max. Units

    Thermal Resistance, Junction to Case Rth(j-c) Per IGBT 0.11 C/WThermal Resistance, Junction to Case Rth(j-c) Per FWDi 0.24 C/WContact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied 0.065 C/W

  • 247

    CM300DY-12HDual IGBTMOD H-Series Module300 Amperes/600 Volts

    Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

    COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

    CO

    LLEC

    TOR

    CURR

    ENT,

    I C, (A

    MPER

    ES)

    OUTPUT CHARACTERISTICS(TYPICAL)

    600

    0 2 4 6 8 10

    300

    100

    0

    VGE = 20V15

    12

    11

    87

    Tj = 25oC

    200

    400

    500

    10

    9

    GATE-EMITTER VOLTAGE, VGE, (VOLTS)

    CO

    LLEC

    TOR

    CURR

    ENT,

    I C, (A

    MPER

    ES)

    TRANSFER CHARACTERISTICS(TYPICAL)

    600

    0 4 8 12 16 20

    400

    300

    200

    100

    0

    VCE = 10VTj = 25CTj = 125C

    500

    COLLECTOR-CURRENT, IC, (AMPERES)

    CO

    LLEC

    TOR-

    EMIT

    TER

    SATU

    RATI

    ON

    VOLT

    AGE,

    VCE

    (sat),

    (V

    OLTS

    )

    COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS

    (TYPICAL)5

    0 100 200 300 400 600

    4

    3

    2

    1

    0500

    VGE = 15VTj = 25CTj = 125C

    GATE-EMITTER VOLTAGE, VGE, (VOLTS)

    CO

    LLEC

    TOR-

    EMIT

    TER

    SATU

    RATI

    ON

    VOLT

    AGE,

    VCE

    (sat),

    (V

    OLTS

    )

    COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS

    (TYPICAL)10

    0 4 8 12 16 20

    8

    6

    4

    2

    0

    Tj = 25C

    IC = 120A

    IC = 600A

    IC = 300A

    0 0.8 1.6 2.4 3.2 4.0101

    EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

    FREE-WHEEL DIODEFORWARD CHARACTERISTICS

    (TYPICAL)

    102

    103

    EMIT

    TER

    CUR

    RENT

    , IE,

    (A

    MPER

    ES)

    Tj = 25C

    COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

    CA

    PACI

    TANC

    E, C

    ies,

    C o

    es,

    C r

    es,

    (nF

    )

    CAPACITANCE VS. VCE(TYPICAL)

    10-1 100 102

    102

    101

    100

    10-1

    VGE = 0Vf = 1MHz

    101

    Cies

    Coes

    Cres

    COLLECTOR CURRENT, IC, (AMPERES)

    SW

    ITCH

    ING

    TIM

    E, (n

    s)

    HALF-BRIDGESWITCHING CHARACTERISTICS

    (TYPICAL)103

    101 102 103

    102

    101

    td(off)td(on)

    trVCC = 300VVGE = 15VRG = 2.1Tj = 125C

    tf

    EMITTER CURRENT, IE, (AMPERES)

    R

    EVER

    SE R

    ECO

    VERY

    TIM

    E, t r

    r, (ns

    )

    REVERSE RECOVERY CHARACTERISTICS(TYPICAL)

    103

    101 102 103

    102

    101

    trr

    Irr

    di/dt = -600A/secTj = 25oC

    102

    101

    100 REV

    ERSE

    REC

    OVE

    RY C

    URRE

    NT, I

    rr, (A

    MPER

    ES)

    GATE CHARGE, QG, (nC)

    G

    ATE-

    EMIT

    TER

    VOLT

    AGE,

    VG

    E, (V

    OLTS

    )

    GATE CHARGE, VGE20

    0 200 400 600 800 1000

    16

    12

    8

    4

    0

    VCC = 200V

    1200

    VCC = 300V

  • 248

    CM300DY-12HDual IGBTMOD H-Series Module300 Amperes/600 Volts

    Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

    TIME, (s)

    N

    ORM

    ALIZ

    ED T

    RANS

    IENT

    THE

    RMAL

    IMPE

    DANC

    E, Z

    th(j-c

    )

    TRANSIENT THERMALIMPEDANCE CHARACTERISTICS

    (IGBT)101

    10-5 10-4 10-3

    100

    10-1

    10-2

    10-3

    10-3 10-2 10-1 100 101

    Single PulseTC = 25CPer Unit Base = Rth(j-c) = 0.11C/W

    Z th

    = R

    th (N

    ORMA

    LIZED

    VALU

    E)

    10-1

    10-2

    10-3

    TIME, (s)

    N

    ORM

    ALIZ

    ED T

    RANS

    IENT

    THE

    RMAL

    IMPE

    DANC

    E, Z

    th(j-c

    )

    TRANSIENT THERMALIMPEDANCE CHARACTERISTICS

    (FWDi)101

    10-5 10-4 10-3

    100

    10-1

    10-2

    10-3

    10-3 10-2 10-1 100 101

    Single PulseTC = 25CPer Unit Base = Rth(j-c) = 0.24C/W

    Z th

    = R

    th (N

    ORMA

    LIZED

    VALU

    E)

    10-1

    10-2

    10-3