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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-SA Power Management Transistors-MOSFET
CJMNT30 PNP Power Transistor with N-MOSFET
DFNWB2×2-6L-SA
FEATURES Ultra low collector-to-emitter saturation voltage
High DC current gain Small package DFNWB2x2-6L-SA
APPLICATIONS Charging circuit Other power management in portable equipments
MARKING: 30
Power Dissipation, Temperature and Thermal Resistance
PC Power Dissipation (Tc=25 ,Note1) 2.5 W
RθJA Thermal Resistance from Junction to Ambient 179 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150
TL Lead Temperature 260
0.7 W Power Dissipation PD
Equivalent circuit
V(BR)DSS/VR RDS(on)MAX ID/IC
20V360mΩ@4.5V
0.69A
-30V / - 2A
410mΩ@2.5V480mΩ@1.8V
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Unit
PNP Transistor
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
Collector Current-Continuous(Note1) -3 A IC
Collector Current-Continuous(Note2) -2 A
ICM Collector Current-Pulse(Note3) -6 A
N-MOSFET
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±6 V
Drain Current -Continuous(Note1) 0.8 A ID
Drain Current -Continuous(Note2) 0.69 A
IDM Drain Current - Pulse(Note3) 1.4 A
1A-1,May,2017
PIN1TOP VIEW BOTTOM VIEW
N3N1
N4N6
30YY
30 = Device code
YY=Code
ELECTRICAL CHARACTERISTICS
aT =25 unless otherwise specified
Parameter Symbol Test conditions Min Typ Max Unit
PNP Transistor Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -30 V
Collector-emitter breakdown V(BR)CEO IC=-10mA,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -6 V
Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA
DC current gain hFE VCE=-2V, IC=-1A 100 300
Collector-emitter saturation voltage VCE(sat) IC=-2A,IB=-200mA -0.2 -0.4 V
Base-emitter saturation voltage VBE(sat) IC=-2A,IB=-200mA -1 -1.5 V
Base-emitter voltage VBE(on) VCE=-2V, IC=-500mA -0.7 -1 V
N-MOSFET
STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=250µA 20 V
Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 µA
Gate-body leakage current IGSS VGS =±5V, VDS = 0V ±5 µA
Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 0.45 0.75 1 V
VGS =4.5V, ID =0.55A 175 360 mΩ
VGS =2.5V, ID =0.45A 235 410 mΩ
VGS =1.8V, ID =0.35A 350 480 mΩ Drain-source on-resistance
RDS(on)
Diode forward voltage VSD IS=0.35A, VGS = 0V 0.5 1 V
DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss 50 pF
Output Capacitance Coss 13 pF
Reverse Transfer Capacitance Crss
VDS =10V,VGS =0V,f =1MHz
8 pF
SWITCHING PARAMETERS (note 4) Turn-on delay time td(on) 22 ns
Turn-on rise time tr 80 ns
Turn-off delay time td(off) 700 ns
Turn-off fall time tf
VGS=4.5V,VDS=10V,
RL=10Ω,RGEN=6Ω, ID=0.5A
650 ns
Total Gate Charge Qg 1.15 nC
Gate-Source Charge Qgs 0.15 nC
Gate-Drain Charge Qgd
VDS =10V,VGS =4.5V,
ID =0.6A 0.23 nC
Note: 1、 Surface mounted on FR-4 board using 1 square inch pad size, 1oz copper
2、 Surface mounted on FR-4 board using minimum pad size, 1oz copper
3、 Pulse test: pulse width =300μs, duty cycle≤ 2%
4、 These parameters have no way to verify.
2A-1,May,2017
-1 -10 -100 -1000-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
0 25 50 75 100 125 1500
200
400
600
800
1000
1200
-1 -10 -100 -1000-1
-10
-100
-1000
-1 -10 -100 -1000100
150
200
250
300
350
400
450
500
-0.1 -1 -101
10
100
-0 -2 -4 -6 -8 -10 -120
200
400
600
800
1000
1200
1400
1600
1800
2000
β=10
ICVBEsat ——
BASE
-EM
ITTE
R S
ATU
RAT
ION
VOLT
AGE
V B
Esa
t (V
)
COLLECTOR CURREMT IC (mA)
Ta=100
Ta=25
PC —— Ta
AMBIENT TEMPERATURE Ta ( )
CO
LLEC
TOR
PO
WER
DIS
SIPA
TIO
NP C
(m
W)
Ta=100
Ta=25
β=10
ICVCEsat ——
CO
LLE
CTO
R-E
MIT
TER
SA
TUR
ATI
ON
VOLT
AGE
V C
Esa
t (m
V)
COLLECTOR CURREMT IC (mA)
-3000-3000
IChFE ——
Ta=100
Ta=25
DC
CU
RR
EN
T G
AIN
h
FE
COLLECTOR CURRENT IC (mA)
COMMON EMITTERVCE= -2V
-20
f=1MHzIE=0/IC=0Ta=25
VCB/VEBCob/Cib ——
Cob
Cib
REVERSE VOLTAGE V (V)
CAP
ACIT
ANC
E
C
(pF)
500
-3000
-4.5mA
Static Characteristic
COMMON EMITTERTa=25
-5mA
-4mA
-3.5mA
-3mA
-2.5mA
-2mA
-1.5mA
-1mA
IB=-0.5mA
CO
LLE
CTO
R C
UR
RE
NT
I C
(m
A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
PNP Transistor Typical Characteristics
www.cj-elec.com 3 D,Jun,2014
0.0 0.5 1.0 1.5 2.0 2.5 3.00
1
2
3
4
5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0100
200
300
400
500
600
100 200 300 400 500 600100
200
300
400
500
0.0 0.5 1.0 1.5 2.0 2.5 3.00
100
200
300
400
500
0.0 0.2 0.4 0.6 0.8 1.0 1.20.1
1
10
100
25 50 75 100 1250.5
0.6
0.7
0.8
0.9
1.0
VGS=5.5V
VGS=4.5V
VGS=2.5V
DR
AIN
CU
RR
EN
T
I D
(A)
DRAIN TO SOURCE VOLTAGE VDS (V)
Ta=25Pulsed
VGS=1.5V
Ta=100
GATE TO SOURCE VOLTAGE VGS (V)
ON
-RES
ISTA
NC
E
RD
S(O
N)
(mΩ
)
ID=550mA
Ta=25
VGS——RDS(ON)
Pulsed
VGS=1.8V
500
Ta=25Pulsed
VGS=4.5V
VGS=2.5V
ON
-RES
ISTA
NC
E
RD
S(O
N)
(mΩ
)
DRAIN CURRENT ID (mA)
ID——RDS(ON)
VGS=3.5V
DR
AIN
CU
RR
EN
T
I D
(mA)
GATE TO SOURCE VOLTAGE VGS (V)
VDS=16VPulsed
Ta=100
Ta=25
Transfer Characteristics
Ta=100Pulsed
SO
UR
CE
CU
RR
EN
T
I S
(mA)
SOURCE TO DRAIN VOLTAGE VSD (V)
Ta=25Pulsed
VSDIS ——
Output Characteristics
T HR
ESH
OLD
VO
LTAG
E
V TH
(V)
JUNCTION TEMPERATURE TJ ( )
ID=250uA
Threshold Voltage
NMOS Typical Characteristics
www.cj-elec.com 4 D,Jun,2014
www.cj-elec.com 5 A-1,May,2017
Min. Max. Min. Max.A 0.700 0.800 0.028 0.031A1 0.000 0.050 0.000 0.002A2D 1.900 2.100 0.075 0.083E 1.900 2.100 0.075 0.083D1 0.800 1.000 0.031 0.039E1 0.700 0.900 0.028 0.035D2 0.200 0.400 0.008 0.016E2 0.700 0.900 0.028 0.035e1e2kb 0.250 0.350 0.010 0.014eL 0.250 0.350 0.010 0.014
0.650TYP. 0.026TYP.
0.650TYP. 0.026TYP.0.325TYP. 0.013TYP.0.200MIN. 0.008MIN.
Symbol Dimensions In Millimeters Dimensions In Inches
0.203REF. 0.008REF.
DFNWB2X2-6L-SA Package Outline Dimensions
DFNWB2X2-6L-SA Suggested Pad Layout