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Institute of Industrial Science TAKAHASHI LAB. Characterization of Various Materials by Nano-probes CIRMM/LIMMS/NCRC Ee-305 TAKAHASHI LAB. Nano-probing Technologieshttp://www.spm.iis.u-tokyo.ac.jp Nano-electronics Department of Electrical Engineering and Information Systems Centre for International Research on Micronano Mechatronics Development of novel nano-probing technologies and nano-scale characterization of nano-materials for future device application We aim at investigating electronic and optical properties in various nano-materials by means of nano-probe methods such as scanning tunneling microscopy (STM), atomic force microscopy (AFM) and related ones. Tunable Ti:Al 2 O 3 laser with solid state green laser Variable temperature SPM in ultra-high vacuum Multi-functional SPM equipments: (a) air type, (b)/(c) high vacuum and variable temperature type (a) (b) (c) Development of Novel SPM Methods · Fast imaging in AFM · Novel operation methods for high performance SPMs Topographic images of InAs quantum dots observed by fast mode AFM Characterization of Solar Cell Materials · Photovoltaic properties and minority carrier dynamics · Photothermal spectroscopy by AFM Channel properties in CNT-FET examined by current-induced magnetic force measurements by MFM Photo-induced current signals on InAs wire structures observed by STM under light illumination Topography, surface potential in darkness and photothermal signals on multicrystalline Si solar cell Characterization of Carbon Nanotube FETs · Current detection by magnetic force microscopy (MFM) Physics in Quantum Nanostructure · Observation of physical phenomena in low-dimensional semiconductors 20 40 60 0 20 40 60 150[μV] [μm] 50 0 0 20 40 60 0 20 40 60 1.5[μm] [μm] 0 Σ3-b Σ9 20 40 60 0 20 40 60 700[mV] [μm] 500 0 Σ3-a Σ3-a (c) PT signal (hν = 1.57 eV) (a) Topography (b) Surface potential (in darkness)

CIRMM/LIMMS/NCRC TAKAHASHI LAB. - iis.u … Ee-305 [Nano ... Variable temperature SPM in ultra-high vacuum ... ♦Physics in Quantum Nanostructure · Observation of physical phenomena

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Page 1: CIRMM/LIMMS/NCRC TAKAHASHI LAB. - iis.u … Ee-305 [Nano ... Variable temperature SPM in ultra-high vacuum ... ♦Physics in Quantum Nanostructure · Observation of physical phenomena

Institute of Industrial Science

TAKAHASHI LAB.

Characterization of Various Materials by Nano-probes

CIRMM/LIMMS/NCRC

Ee-305

TAKAHASHI LAB.[Nano-probing Technologies]

http://www.spm.iis.u-tokyo.ac.jp

Nano-electronics

Department of Electrical Engineering and Information Systems

Centre for International Research on Micronano Mechatronics

Development of novel nano-probing technologiesand nano-scale characterization of nano-materials

for future device application

We aim at investigating electronic and optical properties in various nano-materials by means of nano-probe methods

such as scanning tunneling microscopy (STM), atomic force microscopy (AFM) and related ones.

Tunable Ti:Al2O3 laser with solid state green laser

Variable temperature SPMin ultra-high vacuum

Multi-functional SPM equipments: (a) air type, (b)/(c) high vacuum and variable temperature type

(a) (b) (c)

♦ Development of Novel SPM Methods· Fast imaging in AFM · Novel operation methods

for high performance SPMs

Topographic images of InAs quantum dots observed by fast mode AFM

♦ Characterization of Solar Cell Materials· Photovoltaic properties

and minority carrier dynamics· Photothermal spectroscopy by AFM

Channel properties in CNT-FET examined by current-induced magnetic force measurements by MFM

Photo-induced current signals on InAs wire structures observed by STM under light illumination

Topography, surface potential in darkness and photothermal signalson multicrystalline Si solar cell

♦ Characterization of Carbon Nanotube FETs· Current detection

by magnetic force microscopy (MFM)

♦ Physics in Quantum Nanostructure· Observation of physical phenomena

in low-dimensional semiconductors

20

40

60

0

20

40

60

150[

μV]

[μm]

50

0

0

2040

60

0

20

40

60

1.5[

μm]

[μm]

0

Σ3-bΣ9

20

40

60

0

20

40

60

700

[mV

]

[μm]

500

0

Σ3-aΣ3-a

(c) PT signal (hν = 1.57 eV)(a) Topography (b) Surface potential (in darkness)