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Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays. Christina L. Howe 1 , Robert A. Weller 1 , Robert A. Reed 1 , Brian D. Sierawski 2 , Paul W. Marshall 3 , Cheryl J. Marshall 4 , - PowerPoint PPT Presentation
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Measurement and Simulation of the Variation in Proton-Induced Energy
Deposition in Large Silicon Diode Arrays
Christina L. Howe1, Robert A. Weller1, Robert A. Reed1, Brian D. Sierawski2, Paul W. Marshall3, Cheryl J. Marshall4,
Marcus H. Mendenhall5, Ronald D. Schrimpf1, and J. E. Hubbs6
1. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 372352. Institute for Space and Defense Electronics, Vanderbilt University, Nashville, TN 372353. Consultant, Brookneal, VA 245284. NASA-GSFC, Greenbelt, MD 207715. Free-Electron Laser Center, Vanderbilt University, Nashville, TN 372356. Ball Aerospace & Technologies Corp., Albuquerque, NM 87117
Outline• Background• Motivation• Experimental Setup• Modeling Description• Results
– Simulation compared with experimental results
– Contribution from reaction mechanisms
– Event rate calculation
• Conclusions
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Background• Focal plane arrays (FPAs)
often used on satellites planned for long orbits in harsh proton environments
• FPAs Advantages– Flexible, reliable, low cost,
high-density resolution, on-chip signal processing, and more radiation tolerant to protons than charge coupled devices (CCDs)
Detector Array
In In In
ROIC
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Basic hybrid FPA
Motivation• Proton events contribute to
device noise floor• Better understanding of how
radiation-induced energy deposition occurs will improve prediction techniques
• Accurate modeling helps predict on-orbit response
• We will show a high-fidelity prediction method based on Monte Carlo simulations and a mathematical model
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http://sohowww.nascom.nasa.gov/gallery/Movies/flares.html
Experimental Setup
• Hybrid FPA consisting of a silicon p-i-n 128 × 128 detector array with hardened CMOS readout integrated circuit (ROIC)
• Full radiometric characterizations were performed– Dark current, noise, responsivity, and sensitivity
• Irradiated with 63 MeV protons at 45°• Biased to 15V resulting in full depletion• Exposed at 233 K
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Modeling Description
• MRED (Monte Carlo Radiative Energy Deposition), a GEANT4 based tool, used for simulation
SensitiveVolume
45°
63 MeV Proton
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• TCAD simulations revealed RPP assumption was sufficient to estimate device response to radiation
Modeling Description• Each event in Monte Carlo simulation represents
only one primary particle hit one pixel, but…– Non-negligible probability of multiple hits on a single
pixel (pile up) exists
– Non radiation induced noise in experimental data
(exp)n_TimeIntegratioFlux(exp)(sim)
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Bin_WidthGauss
NOISE
Pile Up
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µ = 0.08σNOISE = 3
Before Pile Up
After Pile Up
Results
Statistical floor of
experimental data
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Constant-LET and Path Length Distribution Calculation
• Does not predict occurrence of large energy depositions
• Does not predict shape of curve
LengthPath LETositedEnergy_dep
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Reaction Mechanisms
• Nuclear reactions dominate above 500 keV
• Coulomb scattering does not contribute significantly here
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Event Rate Simulations
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• Proton environments from CREME
• GEO – peak five minutes and worst week
• ISS – space station orbit, apmin8
GEO Event Rate Simulations
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ISS Event Rate Simulations
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Conclusions
• The on-orbit response can be predicted with greater detail than available through experiment at energies greater than 700 keV
• Energy events greater than 130 keV are not predicted by path length calculation for this device
• Nuclear reactions dominate the event rate at energies greater than 3 MeV
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