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7/25/2007 1
Challenges and Opportunities in CMP Consumables – A Chemist’s View
Yuzhuo LiCenter for Advanced Materials Processing
Department of ChemistryClarkson University
Potsdam, New York [email protected]
July 2007 CMPUG
Some Interesting Questions
At which technology node CMP will exhaust its usefulness?At which technology node copper will reach its limit as interconnect?What materials could/would be used to replace copper? Still need CMP?What practical considerations one must take for CMP consumables in 32 nm/450 mm processing?
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Functions of CMP
PlanarizationDielectric (PMD and IMD) CMP, NiP CMP, etc
Formation of micro/nano structuresCu CMP, W CMP, STI CMP, MEMS CMP
Surface conditioningNiP, Sapphire, MgO, etc
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Which function(s) of the CMP is most sensitive to technology node?
CMP Consumables
SlurryPadpCMP clean solutionPad conditionerRetainer ringCarrier filmFiltersetc
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Cu CMP Slurry Formulation Strategy- in what order?
OxidizerPeroxides, persulfates, periodates, etc
pHConsider stabilizer stability and Pourbaix diagram
Complexing agentAssist copper dissolution
Passivating agentSuppress isotropic copper dissolution
“Abrasive” particlesSofter the better? What are the roles of particles?
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Technology Node and PS
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Fumed silica
Colloidal Silica
Organic?
Organic/inorganic composite can be larger?
Abrasive Particle Size
Removal rateStep height reduction efficiency
Surface QualityDefect count The key to a good polished surface
A balancing act between mechanical and chemical
Mechanical effect
Che
mic
a l e
ffec t
The perfect balanced line
H. MRR, G. SQ
M. MRR, M. ScratchingL. MRR, Chem. Corr.
L. MRR, Scratching
Strong Chemical/Weak Mechanical Strong Chemical/Weak Mechanical
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Weak Chemical/Mild Mechanical Weak Chemical/Mild Mechanical
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When there is a balance
Representative results from past studies
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Importance of Abrasive Particles
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No abrasive particles
3% 80 nm silica
Optimal Particle Size?
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3% 20 nm silica particles
3% 130 nm silica particles
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Functions of an abrasive
To enhance the mechanical effect of a padMinimum requirement in hardness?What about abrasive-free or abrasive-diet systems?
To serve as a carrierChemically interact with pad, surface to be polished, and all slurry componentsPhysically remove the polishing debris away from the surface
Serve as a particulate lubricantWell-known in classic tribologySpecial effects when the particles are in nanosize
July 2007 CMPUG
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Particulate adsorption
Cu
SiO2
Cu2+ Cu2+ Cu2+
CuO
July 2007 CMPUG
Notice the relative size ratio:
Abrasive particle/polishing debris
Passivation Film Formation
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Cu Surface
BTA molecule
BTA-Cu interaction
BTA-BTA interaction
Where other things fit in here (complexing agent, surfactant, etc)
Interesting question
Will higher MRR/SER ratio always translate to better SHRE?
Is it true that tougher the passivation film the better the SHRE?
Case 1: non-BTA based passivating film, zero static etch rate, > 5000A/min MRR, no step height reduction efficiencyCase 2: surfactant based passivating film, very low static etch rate (<50A/min), high removal rate (>5000A/min), SHRE < 30%
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Pad
disconnect
wafer
Kaufman Model
Pad
wafer
Step height reducedTrench width kept the same
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Pad
wafer
Delamination model
Pad
wafer
Polish debris
No step height reduction orIncreased step height“Trench” width slightly increased
No disconnect
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Slurry with Higher Viscosity Gives Lower SHRE
Simulated linear velocity difference between the fluid in a recessed area and near the pad. The reduced flow, to certain extent, helps the preservation of the passivating film in the recessed area.
slurry Relative viscosity SHRE (%) Dishing at 100/100 um lines (A)
original 1.00 89 600
Original plus IPA 1.35 65 1200
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Porous vs. Non-Cell PadsPorous Non-cell
21
Porous vs. Non-cell PadsAfter breaking-in and conditioning
Porous Non-cell
22
Temperature profiles during polishing
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0Polishing time (Sec.)
Tem
pera
ture
(C)
Reference
NCP B
NCP pad temperature is lower during the polishing.
Lower local temperature
Slower to develop glazing effect?
Pad Surface Temperature
23
Due to Greater Heat Capacity?
20
25
30
35
40
45
0 2 4 6 8 10 12
sec
Tem
para
ture
(C)
NCPReference
24
Results and DiscussionBlanket wafer data as a function of pad life
Mipox padperformancestable evenafter 1200 wafers
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0 200 400 600 800 1000 1200 1400
Wafer number
MR
R(A
/min
)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Nor
mal
ized
WIW
NU
Mipox IC 1000 Mipox WIWNU IC WIWNU
IC 1000 experiencedsteady drop in MRRfrom wafer 300
Conditioner ruled outas cause for drop inremoval rate
Carrier film changed
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Blanket wafer data as a function of pad life (contd.)
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0 100 200 300 400 500 600
Wafer number
MR
R(A
/min
)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Nor
mal
ized
WIW
NU
Mipox IC 1000 Mipox WIWNU IC WIWNU
MRR starts to decrease after 300 wafers in case of IC-1000
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Surface quality of polished wafers
0
0.5
1
1.5
2
2.5
3
0 200 400 600 800 1000 1200 1400
Wafer number
RM
S (n
m)
IC 1000 Mipox
Comparable surface roughnessvalues for wafers polished onboth the pads
27
Pad temperature measurement
0
5
10
15
20
25
30
35
40
45
0 200 400 600 800 1000 1200 1400
Wafer number
Tem
pera
ture
(C)
IC 1000 MipoxMaximum pad temperature also suggesting end of life after 300 wafersfor the IC 1000 pad
Consistent maximum temperaturesattained with the Mipox pad
28
End-point times as a function of wafer number
40
50
60
70
80
90
100
110
0 200 400 600 800 1000 1200 1400
Wafer number
End
poi
nt ti
me
(sec
)
IC 1000 Mipox
Consistent end-point times with the Mipox padSteady increase in the end-point times with the IC-1000 pad after wafer 300
29
Patterned wafer resultsPlanarization efficiency as a function of wafer number
0
0.2
0.4
0.6
0.8
1
1.2
0 200 400 600 800 1000 1200 1400
Wafer number
Plan
ariz
atio
n ef
ficie
ncy
Edge(100 micron) Middle(100 micron) Center(100 micron) Edge(100 micron) IC pad Middle(100 micorn) IC 1000 Center(100 micron) IC 1000
Imporved planarization efficiency with Mipox pad due to the higher hardness
30
Dishing as a function of wafer number
0
200
400
600
800
1000
1200
1400
1600
1800
2000
100 200 300 400 500 600 700 800 1150
Wafer number
Dish
ing(
A)
Mipox IC 1000
Lesser dishing in most of the runs with the Mipox pad due to the higher stiffness incomparison to the IC-1000 pad
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SURFACE IMAGE
Reference ID MD OD
Reference ID MD OD
Magnification : X200
Angle : 45degreesMipox pad
IC 1000 pad
Reference: New unconditioned pad
After 1200 wafers
After 500 wafers
32
SURFACE IMAGE
Reference ID MD OD
Reference ID MD OD
Magnification : X50
Angle : 45degreesMipox pad
IC 1000 pad
Lower Retention of Slurry Chemistry on NCP Pad
33
34
Potential advantages
Higher hardness and modulus valuesImproved pad-lifeHigher planarization efficiency and lower dishing
Non-porous natureFeasibility of process development at lower flow-rates due to the non-porous natureFeasibility of rapidly changing slurry chemistry during Cu CMP process
For more information, see Mipox poster
Summary
For technology node sensitive CMP processes, abrasive particle size will continue to reduce
Smaller the particle size, the true abrasiveness is reduced.Larger the surface area, the surface adsorption property becomes more importantThe abrasiveness of these particles will be transmitted or express via the tips of the padsNon-cell type pads may offer several potential advantages including longer life time
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