9/27/2018

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Dr. Wayne NiCTO and Board Chairman

CanaanTek

September 19, 2018

Shanghai

Sub-5G RF Front-end Components

Based on Advanced SOI CMOS Process

9/27/2018 3

OUTLINES

Technology

Team

Markets

Company Brief

Competitiveness

9/27/2018 4

CanaanTek

CanaanTek is a fabless RFIC design house

providing high quality RF components for

wireless consumer markets

9/27/2018 5

Company Map

North Carolina US Office

Shanghai HQ Hangzhou R&D Center

Shenzhen Sales Office

9/27/2018 6

Company History

2014

Hangzhou R&D

2015

1st SOI Product

2016

50kk RFFE Chips

Shipped

2017

300kk RFFE

Chips Shipped

2018

Tuner Products

Investments from

Lens Technology

and OFC

2019

Sub-5G

RFFE Products

9/27/2018 7

Company Founder

He was the core member of world’s 1st WiFi 802.11b PRISM chipset team in 1997 from Harris

Semiconductor and designed the best-selling POLARIS cellular transceiver chipsets for RFMD from 1998 to

2004. He led China’s 1st RFIC TD-SCDMA transceiver in Comlent from 2004 to 2007 and subsequently

published mainland China’s 1st transceiver paper for ISSCC in San Francisco in 2007.

He founded CanaanTek in 2008 and worked on various innovative RFIC products since. His interests include

various RF front-end products such as switches, tuners, LNAs and filters in SOI-CMOS process.

Dr. Wayne Ni is an industry veteran in the RFIC

community.

He received his B.S. from University of Science and

Technology of China in 1986 and Ph.D. from

University of Florida in 1994.

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Honors and Rewards

1st Prize for Hangzhou

Entreprenurship Team In 2016

Class A Project in

Hangzhou HEDA in 2014

2nd Prize for China GNSS IC

Competition in 2015

3rd Prize for China

lnnovation&Entreprenurship

Competition in 2013

3rd Prize in Zhang Jiang Patent Competition

In 2012

High Innovative Tech Company in 2014

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More than 50 patents so far

Patents

专利名称 专利号 类别 状态

频率综合器及其校准方法 ZL.200910247632.7 发明 已授权

应用于片外分离器件的自校准低噪声放大器 ZL.201110095191.0 发明 已授权

一种可复用锁相环低通滤波器 ZL.201110103666.6 发明 已授权

一种流水线模数转换器及其电容失配的快速校准方法 ZL.201010022813.2 发明 已授权

复用模数转换输出的双通道射频接收机及其数据处理方法 ZL.201110331431.2 发明 已授权

校准模数转换器的增益误差和输入失调的方法 ZL.200910201560.2 发明 已授权

一种提高压力传感器检测灵敏度装置 ZL201310295104.5 发明 已授权

一种宽带落入式微带铁氧体隔离器 ZL201410006154.1 发明 已授权

CAN5115D BS.12500861.9 布图 已授权

CAN5120 BS.12500884.8 布图 已授权

CAN5125M BS.13500519.1 布图 已授权

CAN5186G BS.16501330.3 布图 已授权

0

12

24

36

48

60

2009 2010 2011 2012 2013 2014 2015 2016 2017

发明 实用新型 布图

专利名称 专利号 类别 状态

校准模数转换器的增益误差和输入失调的装置 ZL.200920213492.7 实用新型 已授权

一种可校准频率综合器 ZL.200920286843.7 实用新型 已授权

封装模型电路图的生成装置 ZL.200920286844.1 实用新型 已授权

键合线建模系统 ZL.200920286842.2 实用新型 已授权

一种流水线模数转换器的级电路装置 ZL.201020033048.X 实用新型 已授权

一种导航射频芯片的电源管理装置 ZL.201020033212.7 实用新型 已授权

一种简化片外电路的射频芯片电路 ZL.201120120652.0 实用新型 已授权

一种低功耗的全球导航系统双通道射频接收机 ZL.201120229728.3 实用新型 已授权

共享射频前端的双通道导航射频接收机系统架构 ZL.201120396032.X 实用新型 已授权

复用模数转换输出的双通道射频接收机 ZL.201120416119.9 实用新型 已授权

多通道导航射频接收机 ZL.201420533548.8 实用新型 已授权

一种频率不随温度变化的压控振荡器电路 ZL.201420541126.5 实用新型 已授权

宽带功率放大器及其有源匹配电路 ZL.201621188670.1 实用新型 已授权

压力传感器及β型PVDF薄膜的高压极化设备 ZL.201621154192.2 实用新型 已授权

一种低功耗低成本高线性的电压模式无源混频器 ZL.201621458409.9 实用新型 已授权

利用注入锁定环形振荡器产生正交本振信号的电路 ZL.201621436829.7 实用新型 已授权

一种ESD电路的RC型静电钳位电路 ZL.201621437515.9 实用新型 已授权

一种双通道多模导航射频接收电路 ZL.201720051477.1 实用新型 已授权

受理中专利名称 专利号 受理中专利名称 专利号

一种基于传输变压器的射频收发前端电路 201110103280.5 宽带功率放大器及其有源匹配电路 201610964461.X

一种射频收发系统电路 201110101581.4 压力传感器及其制作方法 201610929260.6

用于双通道多模射频接收机的频率综合器 201110095190.6 一种低功耗低成本高线性的电压模式无源混频器

201611234944.0

一种新型低功耗的导航射频接收机的系统架构

201110101582.9 一种ESD电路的RC型静电钳位电路 201611217397.5

用于导航系统接收机中具有自动校准功能的低噪声放大器

201110095189.3 利用注入锁定环形振荡器产生正交本振信号的电路

201611218857.6

一种低功耗高集成度自动增益控制放大器 201110095160.5 一种振荡器的频率校准电路及其频率校准方法

201611217366.X

一种单通道射频接收机及其频率规划方法 201110103277.3 一种低功耗低压差线性稳压器系统 201611218141.6

一种双通道射频接收机及其频率规划方法 201110103278.8 用于5GHzWiFi通信带bypass通道低噪声放大器统一匹配系统

201611257851.X

双通道导航射频接收机 201110103268.4 射频地和模拟地之间具有静电释放防护功能的电路及封装结构

201611255058.6双通道导航射频接收机的系统架构 201110183042.X

共享射频前端的双通道导航射频接收机系统架构

201110315666.2 一种双通道多模导航射频接收电路 201710031221.9

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Patents

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Markets

◼ 4G, 4.5G+CA, 5G, IOT and AI leads to high demand for high quality RFFE Components

◼ 5G， 91 bands，$8-17 on each phone，market more than 20 billion by 2022

◼ CanaanTek focuses on SOI CMOS based tuners and switches to capture a few percentage

of the sub-category market by 2022

Yole Development

2016 Report

Before fullscreen phones

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Typical 4G LTE Existing Architecture

Antenna

Tuner 45Vp

Antenna

Tuner 80Vp

Antenna

Tuner 45Vp

Antenna

Tuner 80Vp

Main

Antenna

Diversity

Antenna

DPDT

Swap Switch

Duplexer

Duplexer

Coupler

Coupler

Antenna

Switch Module

Filter

Bank

Power

Amplifier

Module

Rx

Switches

Rx

Diversity

Rx

Diversity

Switch

Filter

Bank

4G LTE

HB

3G

HB

2G

HB

4G LTE

LB

3G

LB

2G

LB

Mo

de

m+

Tra

ns

ce

ive

r

◼ Full screen smartphone, more tuners are

needed

◼ They are not going to be integrated due to

physical location near the antennas

◼ DPDT is also critical. High power and high

linearity while low insertion loss are

demanded

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RFFE Components

◼ Smartphone full screen trend and popularity，smaller antenna aperture space

therefore more tuners needed

◼ At least 4-8 tuners per phone

◼ Needs also high performance DPDT or 4P4T switches

Tuners：Always keeps signal

full strength

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◼ More practical sub-5G (bands n77,

78 and 79) on top of the existing 4G

LTE RFFE architecture

◼ High quality and high performance

tuners and switches are must itemsOr

Or

PAMiD for LB/MB/HB

3G

/4G

TR

AN

SC

EIV

ER

Diversity

Main

Diversity FEM for LB/MB/HB

5G MIMO ANT

(4X4)

SPDT

BPFSPDT

LNA

PA

SPDT

LNA

PA

TX/Rx Module for n78

TX/Rx Module for n79

BPF

5G

TR

AN

SC

EIV

ER

Rx

Tx

Rx

Tx

Or

2X Ant

Tuners

2X Ant

Tuners

4x4 MIMO 2X Ant Tuners

Operating BandUL

Frequency Range

DL

Frequency Range

n77 3300~4200 MHz 3300~4200 MHz

n78 3300~3800 MHz 3300~3800 MHz

n79 4400~5000 MHz 4400~4500 MHz

NR Operating Bands

3G

/4G

TR

AN

SC

EIV

ER

5G

TR

AN

SC

EIV

ER

Typical Sub-5G (n77, 78, 79) added to 4G LTE Existing Architecture

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Antenna Tuner Applications

High 80Vp

Tuners

Medium 45Vp

Tuner

f 1

f 2f 3

f 4

Wider Tunning Range

Frequency

Mat

chin

g S

11

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Antenna Tuner Unique Challenges

Techniques：

1. IC level: Optimization of power, Ron and Coff; parasitic C at 5GHz is challenging

2. Layout design: Breaking the restriction of foundry PDK rules

3. Package: innovation of package to reduce thermal and Ron/Coff effects

Roff |shunt

Roff |shuntRoff |shunt

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Overall Comments on SOI-CMOS Process

◼ Bad news: SOI switches are very cheap due to high competition in China. Not good news for new startups or new comers or US companies due to trade war. The Good news: still ever increasing large demand for SOI CMOS wafers therefore good for foundries, packaging houses and wafer vendors.

◼ There are rumored threats from MEMS RF. But reliability (high activation voltage) issue is a concern and the cost is still the king.

◼ In 5G era, SOI CMOS process foundries should continue to innovate Ron*Coff to keep them competitive at high frequency and at high linearity.

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Close Collaboration with SOI Foundries

Ron*Coff=130fs

Ron*Coff=100fs

Ron*Coff=80fs

First Generation

Second

Generation

Third

Generation

Per

form

ance

2018 2019 2020

A high performance SOI-CMOS process is a must

MEMS RF like

performance

9/27/2018 19

More SOI CMOS Products

Bulk CMOS SOI CMOS

More Pre-5G RFFE Products can be designed in SOI：

◼ High Ft，Fmax and NFmin， 3-5GHz LNAs

◼ Utilize Cu metal on-chip inductors to design wide-band IPD filters for n77/n78/n79 bands

LNA

IPD Filter

On-chip

InductorSource: Global Foundry website