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1/13
Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MIN. UNIT
overload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMETER MAX. UNIT
APPLICATIONS VBG Continuous off-state supply voltage 50 VIL Continuous load current 15 A
General controller for driving Tj Continuous junction temperature 150 Clamps, motors, solenoids, heaters. RON On-state resistance 60 m
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS switchLow on-state resistance5 V logic compatible inputOvertemperature protection -self resets with hysteresisOverload protection againstshort circuit load withoutput current limiting;latched - reset by inputHigh supply voltage loadprotectionSupply undervoltage lock outStatus indication for overloadprotection activatedDiagnostic status indicationof open circuit load
Very low quiescent currentVoltage clamping for turn off ofinductive loadsESD protection on all pinsReverse battery andovervoltage protection Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 Ground
2 Input
3 (connected to mb)
4 Status
5 LoadFig. 2. Fig. 3.
mb Battery
BATT
LOAD
INPUT
GROUND
STATUS
POWER
MOSFET
RG
CONTROL &
PROTECTION
CIRCUITS
mb
1 2 4 5
3
B
G
L
I
S HSS
TOPFET
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Battery voltages
VBG Continuous off-state supply voltage - 0 50 V
Reverse battery voltages1 External resistors:
-VBG Repetitive peak supply voltage RI= RS4.7 k, 0.1 - 32 V
-VBG Continuous reverse supply voltage RI= RS4.7 k - 16 V
IL Continuous load current Tmb 115 C - 15 A
PD Total power dissipation Tmb 25 C - 83.3 W
Tstg Storage temperature - -55 175 C
Tj Continuous junction temperature2
- - 150 C
Tsold Lead temperature during soldering - 250 C
Input and status
II Continuous input current - -5 5 mA
IS Continuous status current - -5 5 mA
II Repetitive peak input current 0.1 -20 20 mA
IS Repetitive peak status current 0.1 -20 20 mA
Inductive load clamping
EBL
Non-repetitive clamping energy Tmb
= 150 C prior to turn-off - 1.2 J
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VC Electrostatic discharge capacitor Human body model; - 2 kVvoltage C = 250 pF; R = 1.5 k
THERMAL CHARACTERISTIC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance3
Rth j-mb Junction to mounting base - - 1.2 1.5 K/W
1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2 For normal continuous operation. A higher Tjis allowed as an overload condition but at the threshold Tj(TO)the over temperature trip operatesto protect the switch.
3 Of the output Power MOS transistor.
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
STATIC CHARACTERISTICSTmb= 25 C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
VBG Battery to ground IG= 1 mA 50 55 65 V
VBL Battery to load IL= IG= 1 mA 50 55 65 V
-VLG Negative load to ground IL= 1 mA 12 17 21 V
Supply voltage battery to ground
VBG Operating range1 - 5 - 40 V
Currents VBG= 13 V
IL Nominal load current2 VBL= 0.5 V; Tmb= 85 C 6 - - A
IB Quiescent current3
VIG= 0 V; VLG= 0 V - 0.1 2 AIG Operating current
4 VIG= 5 V; IL= 0 A 1.5 2.2 4 mA
IL Off-state load current5 VBL= 13 V; VIG= 0 V - 0.1 1 A
Resistances
RON On-state resistance6 VBG= 13 V; IL= 7.5 A; tp= 300 s - 45 60 m
RON On-state resistance VBG= 5 V; IL= 1.5 A; tp= 300 s - 70 90 m
RG Internal ground resistance IG= 10 mA - 150 -
INPUT CHARACTERISTICSTmb= 25 C; VBG= 13 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITII Input current VIG= 5 V 35 60 100 A
VIG Input clamping voltage II= 200 A 6 7.5 8.5 V
VIG(ON) Input turn-on threshold voltage - 2.1 2.7 V
VIG(OFF) Input turn-off threshold voltage 1.5 2 - V
1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the RONtests are continuous. The specified pulse duration tprefers only to the applied load current.
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
PROTECTION FUNCTIONS AND STATUS INDICATIONSTruth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS TRUTH TABLE THRESHOLDSYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT
Normal on-state 1 1 1
Normal off-state 0 1 0
IL(OC) Open circuit load1 1 0 1 100 350 600 mA
Open circuit load 0 1 0
Tj(TO) Over temperature2 1 0 0 150 175 - C
Over temperature3 0 0 0
VBL(TO) Short circuit load4 1 0 0 9 10.5 12 V
Short circuit load 0 1 0
VBG(TO) Low supply voltage5 X 1 0 3 4 5 V
VBG(LP) High supply voltage6 X 1 0 40 45 50 V
For input 0 equals low, 1 equals high, X equals dont care.For status 0 equals low, 1 equals open or high.For output switch 0 equals off, 1 equals on.
STATUS CHARACTERISTICSTmb= 25 C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VSG Status clamping voltage IS= 100 A; VIG= 0 V 6 7 8 V
VSG Status low voltage IS= 50 A; VBG= 13 V; VIG= 5 V - 0.7 0.8 V
IS Status leakage current VSG= 5 V - 0.1 1 A
IS Status saturation current7 VSS= 5 V; RS= 0 ; VBG= 13 V - 5 - mA
Application information
RS External pull-up resistor8 VSS= 5 V - 100 - k
1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indicationonly. Typical hysteresis equals 140 mA. The thresholds are specified for supply voltage within the normal working range.
2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature bytypically 10 C.
3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,providing the device has not cooled below the reset temperature.
4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V.
6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V.
7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8 The pull-up resistor also protects the status pin during reverse battery conditions.
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
DYNAMIC CHARACTERISTICSTmb= 25 C; VBG= 13 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Inductive load turn-off
-VLG Negative load voltage1 VIG= 0 V; IL= 7.5 A; tp= 300 s 15 20 25 V
Short circuit load protection2 VIG= 5 V; RL10 m
td sc Response time - 90 - s
IL Load current prior to turn-off t < td sc - 42 - A
Overload protection3
IL(lim) Load current limiting VBL= 9 V; tp= 300 s 28 40 52 A
SWITCHING CHARACTERISTICSTmb= 25 C, VBG= 13 V, for resistive load RL= 13 .
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on to VIG= 5 V
td on Delay time to 10% VL - 16 - s
dV/dton Rate of rise of load voltage - 1 2.5 V/ s
t on Total switching time to 90% VL - 40 - s
During turn-off to VIG= 0 V
td off Delay time to 90% VL - 30 - s
dV/dtoff Rate of fall of load voltage - 1.2 2.5 V/ s
t off Total switching time to 10% VL - 50 - s
CAPACITANCESTmb= 25 C; f = 1 MHz; VIG= 0 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cig Input capacitance VBG= 13 V - 15 20 pF
Cbl Output capacitance VBL= VBG= 13 V - 415 580 pF
Csg Status capacitance VSG= 5 V - 11 15 pF
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltageis clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goeshigh.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than VBL(TO), the device remains incurrent limiting until the overtemperature protection operates.
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
Fig.4. High side switch measurements schematic.(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.PD% = 100PD/PD(25 C) = f(Tmb)
Fig.6. Limiting continuous on-state load current.IL= f(Tmb); conditions: VIG= 5 V, VBG= 13 V
Fig.7. Typical on-state characteristics, Tj= 25 C.IL= f(VBL); parameter VBG; tp= 250 s
Fig.8. Typical on-state resistance, Tj= 25 C.RON= f(VBG); conditions: IL= 7.5 A; tp= 300 s
Fig.9. Typical on-state resistance, tp= 300 s.RON= f(Tj); parameter VBG; condition IL= 1.5 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
ILVBG
VIGVSG
RS
VLG
LOAD
VBL
0 0.5 1 1.5 20
10
20
30
40BUK205-50Y
VBL / V
IL / A
6
7
13
5
VBG / V =
0 20 40 60 80 100 120 140
Tmb / C
PD% Normalised Power Derating120
110
100
90
80
70
60
50
40
30
20
10
01 10 100
0
10
20
30
40
50
60
70
80
90
100BUK205-50Y
VBG / V
RON / mOhm
0 50 100 1500
5
10
15
20BUK205-50Y
Tmb / C
IL / A BUK205-50Y
Tmb / C
-60 -20 20 60 100 140 180
RON / mOhm
0
50
100
150
VBG = 5 V
13 V
typ.
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
Fig.10. Typical supply characteristics, 25 C.IG= f(VBG); parameter VIG
Fig.11. Typical operating supply current.IG= f(Tj); parameter VBG; condition VIG= 5 V
Fig.12. Typical supply quiescent current.IB= f(Tj); condition VBG= 13 V, VIG= 0 V, VLG= 0 V
Fig.13. Typical off-state leakage current.IL= f(Tj); conditions: VBL= 13 V = VBG; VIG= 0 V.
Fig.14. Typical input characteristics, Tj= 25 C.II= f(VIG); parameter VBG
Fig.15. Typical input current, Tj= 25 C.II= f(VBG); condition VIG= 5 V
0 20 40 60VBG / V
IG / mA BUK205-50Y5
4
3
2
1
0
OPERATING
QUIESCENT
CLAMPING
HIGH VOLTAGE
10 30 50
VIG = 3 V
VIG = 0 V
-60 -20 20 60 100 140 180
Tj / C
IL BUK205-50Y100 uA
10 uA
1 uA
100 nA
10 nA
1 nA
-60 -20 20 60 100 140 180Tj / C
IG / mA BUK205-50Y3
2
1
0
VBG / V =
13
50
0 2 4 6 8VIG / V
II / uA BUK205-50Y200
150
100
50
0
VBG / V = 5
7
13
-60 -20 20 60 100 140 180
Tj / C
IB BUK205-50Y100 uA
10 uA
1 uA
100 nA
10 nA0 20 40
VBG / V
II / uA BUK205-50Y100
80
60
40
20
010 30 50
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
Fig.16. Typical input threshold voltages.VIG= f(Tj); conditions VBG= 13 V, IL= 80 mA
Fig.17. Typical input clamping voltage.VIG= f(Tj); conditions II= 200 A, VBG= 13 V
Fig.18. Typical status characteristic, Tj= 25 C.IS= f(VSG); conditions VIG= VBG= 0 V
Fig.19. Typical status leakage current.IS= f(Tj); conditions VSG= 5 V, VIG= VBG= 0 V
Fig.20. Typical status low characteristic, Tj= 25 C.IS= f(VSG); conditions VIG= 5 V, VBG= 13 V, IL= 0 A
Fig.21. Typical status low voltage, VSG= f(Tj).conditions IS= 50 A, VIG= 5 V, VBG= 13 V, IL= 0 A
-60 -20 20 60 100 140 180
Tj / C
VIG / V BUK205-50Y3.0
2.5
2.0
1.5
1.0
VIG(ON)
VIG(OFF)
-60 -20 20 60 100 140 180Tj / C
IS BUK205-50Y10 uA
1 uA
100 nA
10 nA
-60 -20 20 60 100 140 180
Tj / C
VIG / V BUK205-50Y8.0
7.5
7.0
6.50 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VSG / V
IS / uA BUK205-50Y500
400
300
200
100
0
0 2 4 6 8 10VSG / V
IS / mA BUK205-50Y20
15
10
5
0-60 -20 20 60 100 140 180
Tj / C
VSG / V BUK205-50Y1
0.8
0.6
0.4
0.2
0
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
Fig.22. Typical status clamping voltage, VSG= f(Tj).parameter VIG; conditions IS= 100 A, VBG= 13 V
Fig.23. Low load current detection threshold.IL(OC)= f(Tj); conditions VIG= 5 V; VBG= 13 V
Fig.24. Supply typical undervoltage thresholds.VBG(TO)= f(Tj); conditions VIG= 3 V; IL= 80 mA
Fig.25. Supply typical overvoltage thresholds.VBG(LP)= f(Tj); conditions VIG= 5 V; IL= 80 mA
Fig.26. Typical battery to ground clamping voltage.VBG= f(Tj); parameter IG
Fig.27. Typical negative load clamping characteristic.IL= f(VLG); conditions VIG= 0 V, tp= 300 s, 25 C
-60 -20 20 60 100 140 180
Tj / C
VSG / V BUK205-50Y8.0
7.5
7.0
6.5
5VIG / V =
0
-60 -20 20 60 100 140 180Tj / C
VBG(LP) / V BUK205-50Y47
46
45
44
43
on
off
-50 0 50 100 150 2000
100
200
300
400
500
600
700
800BUK205-50Y
Tmb / C
IL(OC) / mA
max.
min.
typ.
-60 -20 20 60 100 140 180Tj / C
VBG / V BUK205-50Y65
60
55
50
10 uA
1 mA
IG =
-60 -20 20 60 100 140 180Tj / C
VBG(TO) / V BUK205-50Y5
4
3
2
1
0
on
off
-25 -20 -15 -10 -5 00
5
10
15
20
25
30BUK205-50Y
VLG / V
IL / A
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
Fig.28. Typical negative load clamping voltage.VLG= f(Tj); parameter IL; condition VIG= 0 V.
Fig.29. Typical battery to load clamping voltage.VBL= f(Tj); parameter IL; condition IG= 5 mA.
Fig.30. Typical reverse battery characteristic.IG= f(VBG); conditions IL= 0 A, Tj= 25 C
Fig.31. Typical reverse diode characteristic.IL= f(VBL); conditions VIG= 0 V, Tj= 25 C
Fig.32. Typical output capacitance. Tmb= 25 CCbl= f(VBL); conditions f = 1 MHz, VIG= 0 V
Fig.33. Typical overload characteristic, Tmb= 25 C.IL= f(VBL); condition VBG= 13 V; parameter tp
-60 -20 20 60 100 140 180Tj / C
VLG / V BUK205-50Y
-22
-20
-18
-16
-14
-12
-10
7.5 A
1 mA
IL =
tp = 300 us
-1.2 -1 -0.8 -0.6 -0.4 -0.2 0-40
-30
-20
-10
0BUK205-50Y
VLB / V
IL / A
-60 -20 20 60 100 140 180Tj / C
VBL / V BUK205-50Y65
60
55
50
100 uA
1 mA
4 A
IL =
tp = 300 us
0 10 20 30 40 50100 pF
1 nF
10 nFBUK205-50Y
VBL / V
Cbl
-20 -10 0
VBG / V
IG / mA BUK205-50Y0
-50
-100
-150-15 -5 0 5 10 15 20 25
0
10
20
30
40
50
60BUK205-50Y
VBL / V
IL / A
VBL(TO) typ.
tp =
300 us
current limiting
i.e. before short
circuit load trip
50 us
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
Fig.34. Typical overload current, VBL= 9 V.IL= f(Tmb); conditions VBG= 13 V; tp= 300 s
Fig.35. Typical short circuit load threshold voltage.VBL(TO)= f(VBG); condition Tmb= 25 C
Fig.36. Typical short circuit load threshold voltage.VBL(TO)= f(Tmb); condition VBG= 13 V
Fig.37. Transient thermal impedance.Zthj-mb= f(t); parameter D = tp/T
-50 0 50 100 150 2000
10
20
30
40
50
60BUK205-50Y
Tmb / C
IL / A
typ.
-60 -20 20 60 100 140 180Tmb / C
VBL(TO) / V BUK205-50Y15
14
13
12
11
10
9
8
7
6
5
0 10 20 30 40
VBG / V
VBL(TO) / V BUK205-50Y12
11
10
9
80
100n 10u 1m 100m 10
t / s
Zth j-mb / (K/W) BUK205-50Y10
1
0.1
0.01110m100u1u
D =tptp
T
TP
t
D
0.5
0.2
0.1
0.05
0.02
D =
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.5 g
Fig.38. SOT426
mounting base connected to centre pin (cropped short)
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.39. SOT426
soldering pattern for surface mounting.
10.3 MAX
11MAX
15.4
2.5
0.5
1.4 MAX
4.5 MAX
0.85 MAX(x4)
3.4
3.4
1.7
1.7
11.5
9.0
3.8
1.3 (x4)
1.7
3.4
1.7
17.5
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Philips Semiconductors Product specification
TOPFET high side switch BUK205-50YSMD version of BUK201-50Y
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.