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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    DESCRIPTION QUICK REFERENCE DATA

    Monolithic temperature and SYMBOL PARAMETER MIN. UNIT

    overload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMETER MAX. UNIT

    APPLICATIONS VBG Continuous off-state supply voltage 50 VIL Continuous load current 15 A

    General controller for driving Tj Continuous junction temperature 150 Clamps, motors, solenoids, heaters. RON On-state resistance 60 m

    FEATURES FUNCTIONAL BLOCK DIAGRAM

    Vertical power DMOS switchLow on-state resistance5 V logic compatible inputOvertemperature protection -self resets with hysteresisOverload protection againstshort circuit load withoutput current limiting;latched - reset by inputHigh supply voltage loadprotectionSupply undervoltage lock outStatus indication for overloadprotection activatedDiagnostic status indicationof open circuit load

    Very low quiescent currentVoltage clamping for turn off ofinductive loadsESD protection on all pinsReverse battery andovervoltage protection Fig.1. Elements of the TOPFET HSS with internal ground resistor.

    PINNING - SOT426 PIN CONFIGURATION SYMBOL

    PIN DESCRIPTION

    1 Ground

    2 Input

    3 (connected to mb)

    4 Status

    5 LoadFig. 2. Fig. 3.

    mb Battery

    BATT

    LOAD

    INPUT

    GROUND

    STATUS

    POWER

    MOSFET

    RG

    CONTROL &

    PROTECTION

    CIRCUITS

    mb

    1 2 4 5

    3

    B

    G

    L

    I

    S HSS

    TOPFET

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)

    SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

    Battery voltages

    VBG Continuous off-state supply voltage - 0 50 V

    Reverse battery voltages1 External resistors:

    -VBG Repetitive peak supply voltage RI= RS4.7 k, 0.1 - 32 V

    -VBG Continuous reverse supply voltage RI= RS4.7 k - 16 V

    IL Continuous load current Tmb 115 C - 15 A

    PD Total power dissipation Tmb 25 C - 83.3 W

    Tstg Storage temperature - -55 175 C

    Tj Continuous junction temperature2

    - - 150 C

    Tsold Lead temperature during soldering - 250 C

    Input and status

    II Continuous input current - -5 5 mA

    IS Continuous status current - -5 5 mA

    II Repetitive peak input current 0.1 -20 20 mA

    IS Repetitive peak status current 0.1 -20 20 mA

    Inductive load clamping

    EBL

    Non-repetitive clamping energy Tmb

    = 150 C prior to turn-off - 1.2 J

    ESD LIMITING VALUE

    SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

    VC Electrostatic discharge capacitor Human body model; - 2 kVvoltage C = 250 pF; R = 1.5 k

    THERMAL CHARACTERISTIC

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    Thermal resistance3

    Rth j-mb Junction to mounting base - - 1.2 1.5 K/W

    1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.

    2 For normal continuous operation. A higher Tjis allowed as an overload condition but at the threshold Tj(TO)the over temperature trip operatesto protect the switch.

    3 Of the output Power MOS transistor.

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    STATIC CHARACTERISTICSTmb= 25 C unless otherwise stated

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    Clamping voltages

    VBG Battery to ground IG= 1 mA 50 55 65 V

    VBL Battery to load IL= IG= 1 mA 50 55 65 V

    -VLG Negative load to ground IL= 1 mA 12 17 21 V

    Supply voltage battery to ground

    VBG Operating range1 - 5 - 40 V

    Currents VBG= 13 V

    IL Nominal load current2 VBL= 0.5 V; Tmb= 85 C 6 - - A

    IB Quiescent current3

    VIG= 0 V; VLG= 0 V - 0.1 2 AIG Operating current

    4 VIG= 5 V; IL= 0 A 1.5 2.2 4 mA

    IL Off-state load current5 VBL= 13 V; VIG= 0 V - 0.1 1 A

    Resistances

    RON On-state resistance6 VBG= 13 V; IL= 7.5 A; tp= 300 s - 45 60 m

    RON On-state resistance VBG= 5 V; IL= 1.5 A; tp= 300 s - 70 90 m

    RG Internal ground resistance IG= 10 mA - 150 -

    INPUT CHARACTERISTICSTmb= 25 C; VBG= 13 V

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITII Input current VIG= 5 V 35 60 100 A

    VIG Input clamping voltage II= 200 A 6 7.5 8.5 V

    VIG(ON) Input turn-on threshold voltage - 2.1 2.7 V

    VIG(OFF) Input turn-off threshold voltage 1.5 2 - V

    1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.

    2 Defined as in ISO 10483-1.

    3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.

    4 This is the continuous current drawn from the battery with no load connected, but with the input high.

    5 The measured current is in the load pin only.

    6 The supply and input voltage for the RONtests are continuous. The specified pulse duration tprefers only to the applied load current.

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    PROTECTION FUNCTIONS AND STATUS INDICATIONSTruth table for normal, open-circuit load and overload conditions and abnormal supply voltages.

    FUNCTIONS TRUTH TABLE THRESHOLDSYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT

    Normal on-state 1 1 1

    Normal off-state 0 1 0

    IL(OC) Open circuit load1 1 0 1 100 350 600 mA

    Open circuit load 0 1 0

    Tj(TO) Over temperature2 1 0 0 150 175 - C

    Over temperature3 0 0 0

    VBL(TO) Short circuit load4 1 0 0 9 10.5 12 V

    Short circuit load 0 1 0

    VBG(TO) Low supply voltage5 X 1 0 3 4 5 V

    VBG(LP) High supply voltage6 X 1 0 40 45 50 V

    For input 0 equals low, 1 equals high, X equals dont care.For status 0 equals low, 1 equals open or high.For output switch 0 equals off, 1 equals on.

    STATUS CHARACTERISTICSTmb= 25 C.

    The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    VSG Status clamping voltage IS= 100 A; VIG= 0 V 6 7 8 V

    VSG Status low voltage IS= 50 A; VBG= 13 V; VIG= 5 V - 0.7 0.8 V

    IS Status leakage current VSG= 5 V - 0.1 1 A

    IS Status saturation current7 VSS= 5 V; RS= 0 ; VBG= 13 V - 5 - mA

    Application information

    RS External pull-up resistor8 VSS= 5 V - 100 - k

    1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indicationonly. Typical hysteresis equals 140 mA. The thresholds are specified for supply voltage within the normal working range.

    2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature bytypically 10 C.

    3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,providing the device has not cooled below the reset temperature.

    4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.

    5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V.

    6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V.

    7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.

    8 The pull-up resistor also protects the status pin during reverse battery conditions.

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    DYNAMIC CHARACTERISTICSTmb= 25 C; VBG= 13 V

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    Inductive load turn-off

    -VLG Negative load voltage1 VIG= 0 V; IL= 7.5 A; tp= 300 s 15 20 25 V

    Short circuit load protection2 VIG= 5 V; RL10 m

    td sc Response time - 90 - s

    IL Load current prior to turn-off t < td sc - 42 - A

    Overload protection3

    IL(lim) Load current limiting VBL= 9 V; tp= 300 s 28 40 52 A

    SWITCHING CHARACTERISTICSTmb= 25 C, VBG= 13 V, for resistive load RL= 13 .

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    During turn-on to VIG= 5 V

    td on Delay time to 10% VL - 16 - s

    dV/dton Rate of rise of load voltage - 1 2.5 V/ s

    t on Total switching time to 90% VL - 40 - s

    During turn-off to VIG= 0 V

    td off Delay time to 90% VL - 30 - s

    dV/dtoff Rate of fall of load voltage - 1.2 2.5 V/ s

    t off Total switching time to 10% VL - 50 - s

    CAPACITANCESTmb= 25 C; f = 1 MHz; VIG= 0 V

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    Cig Input capacitance VBG= 13 V - 15 20 pF

    Cbl Output capacitance VBL= VBG= 13 V - 415 580 pF

    Csg Status capacitance VSG= 5 V - 11 15 pF

    1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltageis clamped by the device.

    2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goeshigh.

    3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than VBL(TO), the device remains incurrent limiting until the overtemperature protection operates.

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    Fig.4. High side switch measurements schematic.(current and voltage conventions)

    Fig.5. Normalised limiting power dissipation.PD% = 100PD/PD(25 C) = f(Tmb)

    Fig.6. Limiting continuous on-state load current.IL= f(Tmb); conditions: VIG= 5 V, VBG= 13 V

    Fig.7. Typical on-state characteristics, Tj= 25 C.IL= f(VBL); parameter VBG; tp= 250 s

    Fig.8. Typical on-state resistance, Tj= 25 C.RON= f(VBG); conditions: IL= 7.5 A; tp= 300 s

    Fig.9. Typical on-state resistance, tp= 300 s.RON= f(Tj); parameter VBG; condition IL= 1.5 A

    L

    I

    S

    TOPFET

    HSS

    B

    G

    IB

    IG

    II

    IS

    ILVBG

    VIGVSG

    RS

    VLG

    LOAD

    VBL

    0 0.5 1 1.5 20

    10

    20

    30

    40BUK205-50Y

    VBL / V

    IL / A

    6

    7

    13

    5

    VBG / V =

    0 20 40 60 80 100 120 140

    Tmb / C

    PD% Normalised Power Derating120

    110

    100

    90

    80

    70

    60

    50

    40

    30

    20

    10

    01 10 100

    0

    10

    20

    30

    40

    50

    60

    70

    80

    90

    100BUK205-50Y

    VBG / V

    RON / mOhm

    0 50 100 1500

    5

    10

    15

    20BUK205-50Y

    Tmb / C

    IL / A BUK205-50Y

    Tmb / C

    -60 -20 20 60 100 140 180

    RON / mOhm

    0

    50

    100

    150

    VBG = 5 V

    13 V

    typ.

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    Fig.10. Typical supply characteristics, 25 C.IG= f(VBG); parameter VIG

    Fig.11. Typical operating supply current.IG= f(Tj); parameter VBG; condition VIG= 5 V

    Fig.12. Typical supply quiescent current.IB= f(Tj); condition VBG= 13 V, VIG= 0 V, VLG= 0 V

    Fig.13. Typical off-state leakage current.IL= f(Tj); conditions: VBL= 13 V = VBG; VIG= 0 V.

    Fig.14. Typical input characteristics, Tj= 25 C.II= f(VIG); parameter VBG

    Fig.15. Typical input current, Tj= 25 C.II= f(VBG); condition VIG= 5 V

    0 20 40 60VBG / V

    IG / mA BUK205-50Y5

    4

    3

    2

    1

    0

    OPERATING

    QUIESCENT

    CLAMPING

    HIGH VOLTAGE

    10 30 50

    VIG = 3 V

    VIG = 0 V

    -60 -20 20 60 100 140 180

    Tj / C

    IL BUK205-50Y100 uA

    10 uA

    1 uA

    100 nA

    10 nA

    1 nA

    -60 -20 20 60 100 140 180Tj / C

    IG / mA BUK205-50Y3

    2

    1

    0

    VBG / V =

    13

    50

    0 2 4 6 8VIG / V

    II / uA BUK205-50Y200

    150

    100

    50

    0

    VBG / V = 5

    7

    13

    -60 -20 20 60 100 140 180

    Tj / C

    IB BUK205-50Y100 uA

    10 uA

    1 uA

    100 nA

    10 nA0 20 40

    VBG / V

    II / uA BUK205-50Y100

    80

    60

    40

    20

    010 30 50

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    Fig.16. Typical input threshold voltages.VIG= f(Tj); conditions VBG= 13 V, IL= 80 mA

    Fig.17. Typical input clamping voltage.VIG= f(Tj); conditions II= 200 A, VBG= 13 V

    Fig.18. Typical status characteristic, Tj= 25 C.IS= f(VSG); conditions VIG= VBG= 0 V

    Fig.19. Typical status leakage current.IS= f(Tj); conditions VSG= 5 V, VIG= VBG= 0 V

    Fig.20. Typical status low characteristic, Tj= 25 C.IS= f(VSG); conditions VIG= 5 V, VBG= 13 V, IL= 0 A

    Fig.21. Typical status low voltage, VSG= f(Tj).conditions IS= 50 A, VIG= 5 V, VBG= 13 V, IL= 0 A

    -60 -20 20 60 100 140 180

    Tj / C

    VIG / V BUK205-50Y3.0

    2.5

    2.0

    1.5

    1.0

    VIG(ON)

    VIG(OFF)

    -60 -20 20 60 100 140 180Tj / C

    IS BUK205-50Y10 uA

    1 uA

    100 nA

    10 nA

    -60 -20 20 60 100 140 180

    Tj / C

    VIG / V BUK205-50Y8.0

    7.5

    7.0

    6.50 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

    VSG / V

    IS / uA BUK205-50Y500

    400

    300

    200

    100

    0

    0 2 4 6 8 10VSG / V

    IS / mA BUK205-50Y20

    15

    10

    5

    0-60 -20 20 60 100 140 180

    Tj / C

    VSG / V BUK205-50Y1

    0.8

    0.6

    0.4

    0.2

    0

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    Fig.22. Typical status clamping voltage, VSG= f(Tj).parameter VIG; conditions IS= 100 A, VBG= 13 V

    Fig.23. Low load current detection threshold.IL(OC)= f(Tj); conditions VIG= 5 V; VBG= 13 V

    Fig.24. Supply typical undervoltage thresholds.VBG(TO)= f(Tj); conditions VIG= 3 V; IL= 80 mA

    Fig.25. Supply typical overvoltage thresholds.VBG(LP)= f(Tj); conditions VIG= 5 V; IL= 80 mA

    Fig.26. Typical battery to ground clamping voltage.VBG= f(Tj); parameter IG

    Fig.27. Typical negative load clamping characteristic.IL= f(VLG); conditions VIG= 0 V, tp= 300 s, 25 C

    -60 -20 20 60 100 140 180

    Tj / C

    VSG / V BUK205-50Y8.0

    7.5

    7.0

    6.5

    5VIG / V =

    0

    -60 -20 20 60 100 140 180Tj / C

    VBG(LP) / V BUK205-50Y47

    46

    45

    44

    43

    on

    off

    -50 0 50 100 150 2000

    100

    200

    300

    400

    500

    600

    700

    800BUK205-50Y

    Tmb / C

    IL(OC) / mA

    max.

    min.

    typ.

    -60 -20 20 60 100 140 180Tj / C

    VBG / V BUK205-50Y65

    60

    55

    50

    10 uA

    1 mA

    IG =

    -60 -20 20 60 100 140 180Tj / C

    VBG(TO) / V BUK205-50Y5

    4

    3

    2

    1

    0

    on

    off

    -25 -20 -15 -10 -5 00

    5

    10

    15

    20

    25

    30BUK205-50Y

    VLG / V

    IL / A

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    Fig.28. Typical negative load clamping voltage.VLG= f(Tj); parameter IL; condition VIG= 0 V.

    Fig.29. Typical battery to load clamping voltage.VBL= f(Tj); parameter IL; condition IG= 5 mA.

    Fig.30. Typical reverse battery characteristic.IG= f(VBG); conditions IL= 0 A, Tj= 25 C

    Fig.31. Typical reverse diode characteristic.IL= f(VBL); conditions VIG= 0 V, Tj= 25 C

    Fig.32. Typical output capacitance. Tmb= 25 CCbl= f(VBL); conditions f = 1 MHz, VIG= 0 V

    Fig.33. Typical overload characteristic, Tmb= 25 C.IL= f(VBL); condition VBG= 13 V; parameter tp

    -60 -20 20 60 100 140 180Tj / C

    VLG / V BUK205-50Y

    -22

    -20

    -18

    -16

    -14

    -12

    -10

    7.5 A

    1 mA

    IL =

    tp = 300 us

    -1.2 -1 -0.8 -0.6 -0.4 -0.2 0-40

    -30

    -20

    -10

    0BUK205-50Y

    VLB / V

    IL / A

    -60 -20 20 60 100 140 180Tj / C

    VBL / V BUK205-50Y65

    60

    55

    50

    100 uA

    1 mA

    4 A

    IL =

    tp = 300 us

    0 10 20 30 40 50100 pF

    1 nF

    10 nFBUK205-50Y

    VBL / V

    Cbl

    -20 -10 0

    VBG / V

    IG / mA BUK205-50Y0

    -50

    -100

    -150-15 -5 0 5 10 15 20 25

    0

    10

    20

    30

    40

    50

    60BUK205-50Y

    VBL / V

    IL / A

    VBL(TO) typ.

    tp =

    300 us

    current limiting

    i.e. before short

    circuit load trip

    50 us

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    Fig.34. Typical overload current, VBL= 9 V.IL= f(Tmb); conditions VBG= 13 V; tp= 300 s

    Fig.35. Typical short circuit load threshold voltage.VBL(TO)= f(VBG); condition Tmb= 25 C

    Fig.36. Typical short circuit load threshold voltage.VBL(TO)= f(Tmb); condition VBG= 13 V

    Fig.37. Transient thermal impedance.Zthj-mb= f(t); parameter D = tp/T

    -50 0 50 100 150 2000

    10

    20

    30

    40

    50

    60BUK205-50Y

    Tmb / C

    IL / A

    typ.

    -60 -20 20 60 100 140 180Tmb / C

    VBL(TO) / V BUK205-50Y15

    14

    13

    12

    11

    10

    9

    8

    7

    6

    5

    0 10 20 30 40

    VBG / V

    VBL(TO) / V BUK205-50Y12

    11

    10

    9

    80

    100n 10u 1m 100m 10

    t / s

    Zth j-mb / (K/W) BUK205-50Y10

    1

    0.1

    0.01110m100u1u

    D =tptp

    T

    TP

    t

    D

    0.5

    0.2

    0.1

    0.05

    0.02

    D =

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    MECHANICAL DATA

    Dimensions in mm

    Net Mass: 1.5 g

    Fig.38. SOT426

    mounting base connected to centre pin (cropped short)

    MOUNTING INSTRUCTIONS

    Dimensions in mm

    Fig.39. SOT426

    soldering pattern for surface mounting.

    10.3 MAX

    11MAX

    15.4

    2.5

    0.5

    1.4 MAX

    4.5 MAX

    0.85 MAX(x4)

    3.4

    3.4

    1.7

    1.7

    11.5

    9.0

    3.8

    1.3 (x4)

    1.7

    3.4

    1.7

    17.5

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    Philips Semiconductors Product specification

    TOPFET high side switch BUK205-50YSMD version of BUK201-50Y

    DEFINITIONS

    Data sheet status

    Objective specification This data sheet contains target or goal specifications for product development.

    Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

    Product specification This data sheet contains final product specifications.

    Limiting values

    Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

    Application information

    Where application information is given, it is advisory and does not form part of the specification.

    Philips Electronics N.V. 1996

    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

    The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

    LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.