BU1507

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1507AX

GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst casedissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 700 VIC Collector current (DC) - 8 AICM Collector current peak value - 15 APtot Total power dissipation Ths ≤ 25 ˚C - 45 WVCEsat Collector-emitter saturation voltage IC = 4 A; IB = 0.95 A - 1.0 VVCEsat Collector-emitter saturation voltage IC = 4 A; IB = 0.8 A - 5.0 VICsat Collector saturation current f = 16kHz 4 - Atf Fall time ICsat = 4 A; f = 16kHz 0.25 0.5 µs

PINNING - SOT186A PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 base

2 collector

3 emitter

case isolated

LIMITING VALUESLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 700 VIC Collector current (DC) - 8 AICM Collector current peak value - 15 AIB Base current (DC) - 4 AIBM Base current peak value - 6 A-IB(AV) Reverse base current average over any 20 ms period - 100 mA-IBM Reverse base current peak value 1 - 5 APtot Total power dissipation Ths ≤ 25 ˚C - 45 WTstg Storage temperature -65 150 ˚CTj Junction temperature - 150 ˚C

THERMAL RESISTANCES


Rth j-hs Junction to heatsink with heatsink compound - 3.7 K/W

Rth j-a Junction to ambient in free air 55 - K/W

1 2 3

case

b

c

e

1 Turn-off current.

October 1997 1 Rev 1.100



ISOLATION LIMITING VALUE & CHARACTERISTICThs = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 Vthree terminals to external waveform;heatsink R.H. ≤ 65% ; clean and dustfree

Cisol Capacitance from T2 to external f = 1 MHz - 10 - pFheatsink

STATIC CHARACTERISTICSThs = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mAICES VBE = 0 V; VCE = VCESMmax - - 2.0 mA

Tj = 125 ˚CIEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mABVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - VVCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V

L = 25 mHVCEsat Collector-emitter saturation voltages IC = 4 A; IB = 0.8 A - - 5.0 V

VBEsat Base-emitter saturation voltage IC = 4 A; IB = 0.8 A - - 1.1 V

hFE DC current gain IC = 100 mA; VCE = 5 V - 17 -hFE IC = 4 A; VCE = 5 V 5.0 7.0 9.0

DYNAMIC CHARACTERISTICSThs = 25 ˚C unless otherwise specified


Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 68 - pF

Switching times (16 kHz line ICsat = 4 A; IB(end) = 0.7 A; LB = 6 µH;deflection circuit) -VBB = 4 V

ts Turn-off storage time 5.0 6.0 µstf Turn-off fall time 0.25 0.5 µs

2 Measured with half sine-wave voltage (curve tracer).




Fig.1. Switching times waveforms.

Fig.2. Switching times definitions.

Fig.3. Switching times test circuit.

Fig.4. High and low DC current gain. hFE = f (IC)VCE = 1 V

Fig.5. High and low DC current gain. hFE = f (IC)VCE = 5 V

Fig.6. Typical collector-emitter saturation voltage.VCEsat = f (IC); parameter IC/IB

IC

IB

VCE

ICsat

IBend

64us

26us20us

t

t

t

TRANSISTOR

DIODE

0.01 0.1 1 10 1001

10

100

IC / A

hFE

VCE = 1 VThs = 25 CThs = 85 C

BU2507AF/X

ICsat

90 %

10 %

tfts

IBend

IC

IB

t

t

- IBM

BU2507AF/X

0.01 0.1 1 10 1001

10

100

IC / A

hFE

VCE = 5 VThs = 25 CThs = 85 C

+ 150 v nominal adjust for ICsat

Lc

CfbT.U.T.LBIBend

-VBB

0.1 1 10 1000.01

0.1

1

10

Ths = 25 CThs = 85 C

BU2507AF/X

IC / A

VCEsat / V

IC/IB = 3IC/IB = 4

IC/IB = 5




Fig.7. Typical base-emitter saturation voltage.VBEsat = f (IB); parameter IC

Fig.8. Typical losses.PTOT = f (IB); IC = 4 A; f = 16 kHz

Fig.9. Typical collector storage and fall time.ts = f (IB); tf = f (IB); IC = 4.0 A; Tj = 85˚C; f = 16 kHz

Fig.10. Normalised power dissipation.PD% = 100⋅PD/PD 25˚C = f (Tmb)

Fig.11. Transient thermal impedance.Zth j-hs = f(t); parameter D = tp/T

0 0.5 1 1.5 20.6

0.7

0.8

0.9

1

1.1

1.2

IB / A

VBEsat / V


BU2507AF/AX

IC = 4 A

IC = 3 A

0 20 40 60 80 100 120 140Ths / C

PD% Normalised Power Derating120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

BU2507AF/DF/AX/DX

0 0.5 1 1.5 20.1

1

IB / A

Ptot / W10


1E-06 1E-4 10E-2 1E+000.001

0.01

0.1

1

10

BU2507AF/X/DF/X

t / s

Zth / K/W

D = tp tp

T

TP

t

D

D = 0

0.02

0.050.10.2

0.5

0 0.5 1 1.5 20

2

4

6

8

10BU2507AF/AX/Df/DX85ts/tf

IB / A

ts/tf/ us




MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.

Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".

10.3max

3.23.0

4.6max

2.9 max

2.8

seatingplane

6.4

15.8max

0.6

2.5

2.54

5.08

1 2 3

3 max.not tinned

3

0.5

2.5

0.90.7

M0.4

15.8 max.

19max.

13.5min.

Recesses (2x) 2.50.8 max. depth

1.0 (2x)

1.3




DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.


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BU1507