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September 2015 DocID17042 Rev 6 1/19
STB120N4F6, STD120N4F6
Automotive-grade N-channel 40 V, 3.5 mΩ typ., 80 ASTripFET™ F6 Power MOSFETs in DPAK and D²PAK packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Designed for automotive applications and AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Application• Switching applications
DescriptionThese devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
DPAK
13
TAB
D²PAK
13
TAB
Order codes VDS RDS(on) max. ID
STB120N4F6 40 V 4 mΩ 80 A
STD120N4F6 40 V 4 mΩ 80 A
Table 1. Device summary
Order codes Marking Package Packaging
STB120N4F6120N4F6
D²PAKTape and reel
STD120N4F6 DPAK
www.st.com
Contents STB120N4F6, STD120N4F6
2/19 DocID17042 Rev 6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 D2PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . 9
4.2 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . 12
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID17042 Rev 6 3/19
STB120N4F6, STD120N4F6 Electrical ratings
19
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 40 V
VGS Gate-source voltage ± 20 V
ID (1)
1. Current limited by package
Drain current (continuous) at TC = 25 °C 80 A
ID (1) Drain current (continuous) at TC = 100 °C 80 A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 110 W
Tstg Storage temperature-55 to 175 °C
Tj Operating junction temperature
Table 3. Thermal resistance
Symbol ParameterValue
UnitDPAK D²PAK
Rthj-case Thermal resistance junction-case max 1.36 °C/W
Rthj-pcb Thermal resistance junction-pcb max (1)
1. When mounted on 1 inch2 2 oz. Cu board.
50 35 °C/W
Table 4. Thermal resistance
Symbol Parameter Value Unit
IAR(1)
1. Pulse width limited by Tj max
Avalanche current, repetitive or not-repetitive 40 A
EAS (2)
2. Starting Tj = 25 °C, ID = 40 A, VDD = 25 V
Single pulse avalanche energy 394 mJ
Electrical characteristics STB120N4F6, STD120N4F6
4/19 DocID17042 Rev 6
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown Voltage
ID = 250 µA, VGS= 0 40 V
IDSSZero gate voltage drain current (VGS = 0)
VDS = 20 VVDS = 20 V, Tc = 125 °C
110
µAµA
IGSSGate body leakage current(VDS = 0)
VGS = ± 20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V
RDS(on)Static drain-source on resistance
VGS = 10 V, ID = 40 A 3.5 4.0 mΩ
Table 6. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit
Ciss Input capacitance
VDS = 25 V, f=1 MHz, VGS = 0 V
- 3850 - pF
Coss Output capacitance - 650 - pF
CrssReverse transfer capacitance
- 350 - pF
Qg Total gate charge VDD = 20 V, ID = 80 A
VGS = 10 V(see Figure 14)
- 65 - nC
Qgs Gate-source charge - 20 - nC
Qgd Gate-drain charge - 16 - nC
RG Intrinsic gate resistance f = 1 MHz open drain - 1.5 - Ω
Table 7. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay timeVDD = 20 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V(see Figure 15)
- 20 - ns
tr Rise time - 70 - ns
td(off) Turn-off delay time - 40 - ns
tf Fall time - 20 - ns
DocID17042 Rev 6 5/19
STB120N4F6, STD120N4F6 Electrical characteristics
19
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)-
80
320
A
A
VSD(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 40 A, VGS = 0 - 1.1 V
trr Reverse recovery time ISD = 80 A, di/dt = 100 A/µs,
VDD = 30 V(see Figure 17)
- 40 ns
Qrr Reverse recovery charge - 56 nC
IRRM Reverse recovery current - 2.8 A
Electrical characteristics STB120N4F6, STD120N4F6
6/19 DocID17042 Rev 6
2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B(BR)DSS vs temperature Figure 7. Static drain-source on resistance
ID
100
10
1
0.10.1 1 VDS(V)10
(A)
Operation in
this
area is
Limite
d by max R
DS(on)
100µs
1ms
10ms
Tj=175°C
Tc=25°C
Single pulse
AM08627v1
ID
200
100
50
00 2 VDS(V)4
(A)
1 3 5
250
300
5V
6V
4V
VGS=10V
76 8
150
350
AM08628v1ID
150
100
50
00 2 VGS(V)4
(A)
1 3 5
200
300
VDS=2V
AM08629v1
V(BR)DSS
-75 TJ(°C)
(norm)
-25 7525 1250.80
0.85
0.90
0.95
1.00
1.05
175
1.10
1.15ID = 250 μA
AM08630v1RDS(on)
3.5
3.0
2.5
2.0ID(A)
(mΩ)
20 40
4.0
4.5VGS=10V
60 80
AM08631v1
DocID17042 Rev 6 7/19
STB120N4F6, STD120N4F6 Electrical characteristics
19
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
VGS
6
4
2
00 10 Qg(nC)
(V)
40
8
20 30
10VDD=20V
ID=80A
50 60 70
AM08632v1 C
1000
100
100.1 10 VDS(V)
(pF)
1
Ciss
Coss
Crss
f = 1 MHz
AM08633v1
VGS(th)
0.8
0.6
0.4
0.2-75 TJ(°C)
(norm)
-25
1.0
7525 125
1.2
175
ID = 250 μA
AM08634v1 RDS(on)
2.0
1.5
1.0
0.5
-75 TJ(°C)
(norm)
-25 7525 125
VGS=10VID=40A
0175
AM08635v1
VSD
20 ISD(A)
(V)
10 5030 400.4
0.5
0.6
0.7
0.8
0.9
1.0TJ=-55°C
TJ=175°C
TJ=25°C
60 70 80
AM08636v1
Test circuits STB120N4F6, STD120N4F6
8/19 DocID17042 Rev 6
3 Test circuits
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped Inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200mF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID17042 Rev 6 9/19
STB120N4F6, STD120N4F6 Package information
19
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and products status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 D2PAK (TO-263) type A package information
Figure 19. D²PAK (TO-263) type A package outline
Package information STB120N4F6, STD120N4F6
10/19 DocID17042 Rev 6
Table 9. D²PAK (TO-263) type A mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10 10.40
E1 8.50 8.70 8.90
E2 6.85 7.05 7.25
e 2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.4
V2 0° 8°
DocID17042 Rev 6 11/19
STB120N4F6, STD120N4F6 Package information
19
Figure 20. D²PAK recommended footprint(a)
a. All dimension are in millimeters
Package information STB120N4F6, STD120N4F6
12/19 DocID17042 Rev 6
4.2 DPAK (TO-252) type A2 package information
Figure 21. DPAK (TO-252) type A2 package outline
DocID17042 Rev 6 13/19
STB120N4F6, STD120N4F6 Package information
19
Table 10. DPAK (TO-252) type A2 mechanical data
Dim.mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 5.10 5.20 5.30
e 2.16 2.28 2.40
e1 4.40 4.60
H 9.35 10.10
L 1.00 1.50
L1 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°
Package information STB120N4F6, STD120N4F6
14/19 DocID17042 Rev 6
Figure 22. DPAK (TO-252) recommended footprint (b)
b. All dimensions are in millimeters
DocID17042 Rev 6 15/19
STB120N4F6, STD120N4F6 Packaging mechanical data
19
5 Packaging mechanical data
Figure 23. Tape for DPAK (TO-252) and D²PAK (TO-263)
P1A0 D1
P0
F
W
E
D
B0K0
T
User direction of feed
P2
10 pitches cumulativetolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top covertape
AM08852v2
Packaging mechanical data STB120N4F6, STD120N4F6
16/19 DocID17042 Rev 6
Figure 24. Reel for DPAK (TO-252) and D²PAK (TO-263)
Table 11. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R 50
T 0.25 0.35
W 23.7 24.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot in core fortape start 25 mm min.width
AM08851v2
DocID17042 Rev 6 17/19
STB120N4F6, STD120N4F6 Packaging mechanical data
19
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3
Revision history STB120N4F6, STD120N4F6
18/19 DocID17042 Rev 6
6 Revision history
Table 13. Document revision history
Date Revision Changes
09-Feb-2010 1 First release
29-Oct-2010 2 Document status promoted from preliminary data to datasheet.
11-Nov-2010 3 Corrected RDS(on) value in Table 5: Static.
13-May-2011 4 Removed package and mechanical data: TO-220
17-May-2011 5 Description in cover page has been updated.
23-Sep-2015 6Updated title, features and description in cover page.
Updated Section 4: Package information.
DocID17042 Rev 6 19/19
STB120N4F6, STD120N4F6
19
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