AO4466

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SymbolVDSVGS

IDM

I ARE ARTJ , T STG

Symbol Typ Max34 4062 75

R JL 18 24

ARepetitive avalanche energy 0.1mH B, G 16 mJ

Maximum Junction-to-Lead C Steady-State C/W

Thermal CharacteristicsParameter UnitsMaximum Junction-to-Ambient A t 10s

R JAC/WC/W

Absolute Maximum Ratings T A=25C unless otherwise noted

V

V20

Pulsed Drain Current B

Power Dissipation

T A=25C

Gate-Source Voltage

Drain-Source Voltage

Maximum Junction-to-Ambient A Steady-State

9.47.7

50

Avalanche Current B, G 18

Continuous DrainCurrent AF

Maximum UnitsParameter

T A=25C

T A=70C

30

W

Junction and Storage Temperature Range

A

P D

C

3.1

2.1

-55 to 150

T A=70C

ID

AO4466N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30VID = 9.4A (V GS = 10V)RDS(ON) < 23m (VGS = 10V)RDS(ON) < 35m (VGS = 4.5V)

100% UIS Tested! 100% Rg Tested!

General Description

The AO4466/L uses advanced trench technology toprovide excellent R DS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWMapplications. The source leads are separated to allow

a Kelvin connection to the source, which may be usedto bypass the source inductance. AO4466 and AO4466L are electrically identical.-RoHS Compliant-AO4466L is Halogen Free

G

D

S

SOIC-8

G

S

D

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

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Symbol Min Typ Max Units

BVDSS 30 V1

TJ=55C 5

IGSS 100 nA

VGS(th) 1 1.6 3 VID(ON) 20 A

17 23TJ=125C 24 30

27 35 m gFS 10 24 SVSD 0.75 1 V

IS 4.3 A

C iss 621 820 pF

C oss 118 pFC rss 85 119 pF

R g 0.4 0.8 1.5

Q g(10V) 11.3 17 nC

Q g(4.5V) 5.7 8 nCQ gs 2.1 nC

Q gd 3 nC

tD(on) 4.5 6.5 nstr 3.1 5 ns

tD(off) 15.1 23 nstf 2.7 5 nstrr 15.5 21 nsQ rr 7.1 nCtrr 8.1 11 nsQ rr 10.8 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICALCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time IF=9.4A, dI/dt=100A/ s

Body Diode Reverse Recovery Charge IF=9.4A, dI/dt=100A/ s

Body Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge IF=9.4A, dI/dt=500A/ s

Drain-Source Breakdown Voltage

On state drain current

ID=250 A, V GS =0V

VGS =4.5V, V DS =5V

VGS =10V, I D=9.4A

Reverse Transfer Capacitance

IF=9.4A, dI/dt=500A/ s

Electrical Characteristics (T J =25C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

IDSS A

Gate Threshold Voltage VDS =VGS ID=250 A

VDS =30 V GS =0V

VDS =0V, V GS = 20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON) Static Drain-Source On-Resistance

Forward TransconductanceDiode Forward Voltage

m

VGS =4.5V, I D=5A

IS=1A,V GS =0VVDS =5V, I D=9.4A

Total Gate ChargeGate Source Charge

Gate resistance VGS =0V, V DS =0V, f=1MHz

Turn-On Rise Time

Turn-Off DelayTime

VGS =10V, V DS =15V, R L=1.6 ,RGEN =3

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS =10V, V DS =15V, I D=9.4A

Total Gate Charge

Gate Drain Charge

VGS =0V, V DS =15V, f=1MHz

SWITCHING PARAMETERS

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment withT A=25C. The value in any given application depends on the user's specific board design.B: Repetitive rating, pulse width limited by junction temperature.

C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICALCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

0

10

20

30

40

50

60

0 1 2 3 4 5

VDS (Volts)Fig 1: On-Region Characteristics

I D ( A )

VGS =3.5V

4.5V

6V10V

0

4

8

12

16

20

1.5 2 2.5 3 3.5 4 4.5

VGS (Volts)Figure 2: Transfer Characteristics

I D ( A )

10

15

20

25

30

35

40

0 5 10 15 20

ID (A)Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

R D S ( O N )

( m

)

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0

VSD (Volts)Figure 6: Body-Diode Characteristics

I S ( A )

25C

125C

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150 175

Temperature (C)Figure 4: On-Resistance vs. Junction

Temperature

N o r m a l

i z e d

O n - R e s

i s t a n c e VGS =10V

VGS =4.5V

10

20

30

40

50

60

2 4 6 8 10

VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage

R D S ( O N )

( m

)

25C

125C

VDS =5V

VGS =4.5V

VGS =10V

ID=9.4A

25C

125C


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0

2

4

6

8

10

0 2 4 6 8 10 12

Q g (nC)Figure 7: Gate-Charge Characteristics

V G S

( V o l

t s )

0

200

400

600

800

1000

0 5 10 15 20 25 30

VDS (Volts)Figure 8: Capacitance Characteristics

C a p a c

i t a n c e

( p F ) C iss

Coss

C rss

0.1

1.0

10.0

100.0

0.1 1 10 100VDS (Volts)

I D ( A m p s )

Figure 10: Maximum Forward Biased SafeOperating Area (Note E)

100 s

10ms1ms

0.1s

1s

10s

DC

RDS(ON)limited

TJ(Max) =150CT A=25C

VDS =15VID=9.4A

0

10

20

30

40

50

0.0001 0.01 1 100

Pulse Width (s)Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)

P o w e r

( W )

TJ(Max) =150CT A=25C

10 s

1

10

100

0.001 0.01 0.1 1 10 100

Time in Avalache, t A (ms)Figure 9: Single Pulse Avalanche Capability

I A , P

e a k A v a

l a n c

h e C u r r e n t

( A ) In descending order

T A=25C, 100C, 125C, 150C


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0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)Figure 12: Normalized Maximum Transient Thermal Impedance

Z J A

N o r m a l

i z e d

T r a n s i e n

t

T h e r m a l

R e s

i s t a n c e

Single Pulse

D=T on /TTJ,PK =T A+P DM.ZJA .R JAR JA=75C/W

TonT

P D

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse


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-

+VDC

Ig

Vds

DUT

-+VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+VDCDUT VddVgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test Circuit & Waveforms

t t r d(on)

t on

t d(off ) t f

t off

VddVgs

Id

Vgs

Rg

DUT

-

+VDC

L

Vgs

Vds

Id

Vgs

BV

I

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Ig

Vgs-

+VDC

DUT

L

Vds

Vgs

Vds

IsdIsd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

IF

AR

DSS

2

E = 1/2 LI

dI/dt

IRM

rr

VddVdd

Q = - Idt

t rr

AR AR


Documents

AO4466