AO4433

SymbolVDSVGS

IDM

IAREARTJ, TSTG

Symbol Typ Max28 4054 75

RJL 21 30

W

Maximum Junction-to-Lead C Steady-State C/W

Thermal CharacteristicsParameter UnitsMaximum Junction-to-Ambient AF t 10s RJA

C/WMaximum Junction-to-Ambient A Steady-State C/W

25Gate-Source VoltageDrain-Source Voltage -30

Continuous DrainCurrent AF

Maximum UnitsParameter

TA=25CTA=70C

Absolute Maximum Ratings TA=25C unless otherwise noted

VV

-9.7-50Pulsed Drain Current B

Power Dissipation ATA=25C

Junction and Storage Temperature Range

A

PD

C

32.1

-55 to 150

TA=70C

ID-11

Avalanche Current B -36 ARepetitive avalanche energy 0.1mH B 65 mJ

AO443330V P-Channel MOSFET

Product Summary

VDS (V) = -30VID = -11 A (VGS = -20V)RDS(ON) < 14m (VGS = -20V)RDS(ON) < 18m (VGS = -10V)RDS(ON) < 36m (VGS= -5V)

ESD Protected100% UIS Tested100% Rg Tested

General Description

The AO4433 uses advanced trench technology toprovide excellent RDS(ON) and ultra-low low gate chargewith a 25V gate rating. This device is suitable for useas a load switch or in PWM applications.

SOIC-8Top View Bottom

DD

DD

SS

SG

S

G

D

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4433

Symbol Min Typ Max Units

BVDSS -30 V-1

TJ=55C -5IGSS 10 AVGS(th) -1.5 -2.45 -3.5 VID(ON) -50 A

11 14TJ=125C 15 19

13.8 18 m25.8 36 m

gFS 20 SVSD -0.72 -1 VIS -4.2 A

Ciss 1760 2200 pFCoss 360 pFCrss 255 357 pFRg 3.2 6.4 8

Qg 30 38 nCQgs 7 nCQgd 8 nCtD(on) 11.5 nstr 8 nstD(off) 35 nstf 18.5 nstrr 24 30 nsQrr 16 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/s

Drain-Source Breakdown Voltage

On state drain current

ID=-250A, VGS=0V

VGS=-10V, VDS=-5VVGS=-20V, ID=-11A

Reverse Transfer Capacitance

IF=-11A, dI/dt=100A/s

Electrical Characteristics (TJ=25C unless otherwise noted)

STATIC PARAMETERSParameter Conditions

IDSS A

Gate Threshold Voltage VDS=VGS ID=-250A

VDS=-30V, VGS=0V

VDS=0V, VGS=25V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Forward TransconductanceDiode Forward Voltage

RDS(ON) Static Drain-Source On-Resistancem

VGS=-10V, ID=-10A

IS=-1A,VGS=0VVDS=-5V, ID=-11AVGS=-5V, ID=-5A

Turn-On Rise TimeTurn-Off DelayTime

VGS=-10V, VDS=-15V, RL=1.5,RGEN=3

Gate resistance VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

SWITCHING PARAMETERSTotal Gate Charge

VGS=-10V, VDS=-15V, ID=-11AGate Source Charge

Maximum Body-Diode Continuous Current

Input CapacitanceOutput Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=0V, VDS=-15V, f=1MHz

Gate Drain Charge

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

T A=25C. The value in any given application depends on the user's specific board design.B: Repetitive rating, pulse width limited by junction temperature.C. The R

JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using

AO4433

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

10

20

30

0 1 2 3 4 5-VDS (Volts)

Fig 1: On-Region Characteristics

-I D

(A

)

VGS=-4V

-4.5V

-5V-10V

-6V

0

5

10

15

20

25

2 2.5 3 3.5 4 4.5 5-VGS(Volts)

Figure 2: Transfer Characteristics

-I D

(A)

0

10

20

30

40

0 5 10 15 20 25-ID (A)

Figure 3: On-Resistance vs. Drain Current andGate Voltage

RD

S(O

N) (m

)

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0 1.2-VSD (Volts)

Figure 6: Body-Diode Characteristics

-I S

(A

)

25C

125C

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175Temperature (C)

Figure 4: On-Resistance vs. JunctionTemperature

No

rma

lize

d O

n-R

es

ista

nc

e

VGS=-20VID=-11A

VGS=-10VID=-10A

VGS=-5VID=-5A

0

10

20

30

40

50

0 5 10 15 20-VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

RD

S(O

N) (m

)

25C

125C

VDS=-5V

VGS=-10V

VGS=-20V

ID=-11A

25C

125C

VGS=-5V


AO4433

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

2

4

6

8

10

0 5 10 15 20 25 30 35-Qg (nC)

Figure 7: Gate-Charge Characteristics

-V G

S (V

olts

)

0

500

1000

1500

2000

2500

0 5 10 15 20 25 30-VDS (Volts)

Figure 8: Capacitance Characteristics

Capa

cita

nc

e (pF

)

Ciss

1

10

100

1000

0.00001 0.001 0.1 10 1000

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)

Pow

er (W

)

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Z JA

N

orm

aliz

ed

Tra

ns

ien

tTh

erm

al R

es

ista

nc

e

Coss Crss

0.1

1.0

10.0

100.0

0.1 1 10 100-VDS (Volts)

-I D

(A

mps

)

Figure 9: Maximum Forward Biased SafeOperating Area (Note E)

100s

10ms

1ms

0.1s

1s

10sDC

RDS(ON)limited

TJ(Max)=150CTA=25C

VDS=-15VID=-11A

Single Pulse

D=Ton/TTJ,PK=TA+PDM.ZJA.RJARJA=75C/W

TonT

PD

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ(Max)=150CTA=25C

10s


AO4433

VDC

Ig

Vds

DUT

VDC

Vgs

VgsQg

Qgs Qgd

Charge

Gate Charge Test C ircuit & W aveform

-

+

-

+

-10V

VddVgs

Id

Vgs

Rg

DUT

VDCVgs

Vds

Id

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

VdsL

-

+

2E = 1/2 LIARAR

BV

I

Vgs+

VDC

DUT

L

Vgs

Isd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

dI/dtRM

rr

Vdd

Q = - Idt

t rr-Isd F-I

-I

VDCDUT VddVgs

Vds

Vgs

RL

Rg

Resistive Switching Test Circuit & Waveforms

-

+

Vgs

Vds

t t

t

t t

t

10%

r

on

d(off) f

off

d(on)


Documents

AO4433