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HMC454* Product Page Quick LinksLast Content Update: 11/01/2016

Comparable PartsView a parametric search of comparable parts

Evaluation Kits• HMC454ST89 Evaluation Board

DocumentationApplication Notes• AN-1363: Meeting Biasing Requirements of Externally

Biased RF/Microwave Amplifiers with Active Bias Controllers

• Broadband Biasing of Amplifiers General Application Note• HMC454ST89 Product Note RevC 1 05• MMIC Amplifier Biasing Procedure Application Note• Thermal Management for Surface Mount Components

General Application NoteData Sheet• HMC454 Data Sheet

Tools and Simulations• HMC454 S-Parameter

Reference MaterialsQuality Documentation• Package/Assembly Qualification Test Report: 3 Lead

Plastic SOT89 Package (QTR: 10002 REV: 02)• PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor

change• Semiconductor Qualification Test Report: GaAs HBT-B

(QTR: 2013-00229)

Design Resources• HMC454 Material Declaration• PCN-PDN Information• Quality And Reliability• Symbols and Footprints

DiscussionsView all HMC454 EngineerZone Discussions

Sample and BuyVisit the product page to see pricing options

Technical SupportSubmit a technical question or find your regional support number

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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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HMC454ST89 / 454ST89E

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

v05.0710

General Description

Features

Functional Diagram

The HMC454ST89 & HMC454ST89E are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifi ers operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifi er gain is typically 17.8 dB from 0.8 to 1.0 GHz and 12.5 dB from 1.8 to 2.2 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifi er output IP3 can be optimized to +40 dBm at 0.9 GHz or +42 dBm at 2.0 GHz. The high output IP3 and PAE makes the HMC454ST89 an ideal driver amplifi er for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.

Output IP3: +40 to +42 dBm

Gain: 12.5 dB @ 2150 MHz

50% PAE @ +28 dBm Pout

+17.5 dBm W-CDMA Channel Power@ -45 dBc ACP

Single +5V Supply

Industry Standard SOT89 Package

Included in the HMC-DK002 Designer’s Kit

Electrical Specifi cations, TA = +25°C, Vs= +5V [1]

Typical Applications

The HMC454ST89 / HMC454ST89E is ideal for applications requiring a high dynamic range amplifi er:

• GSM, GPRS & EDGE

• CDMA & W-CDMA

• CATV/Cable Modem

• Fixed Wireless & WLL

Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units

Frequency Range 824 - 960 1800 - 2000 2000 - 2200 MHz

Gain 16 17.8 11 12.5 11 12.5 dB

Gain Variation Over Temperature 0.008 0.016 0.008 0.016 0.008 0.016 dB / °C

Input Return Loss 9 7 12 dB

Output Return Loss 13 21 19 dB

Output Power for 1dB Compression (P1dB) 22 24.5 24 27 24 27.5 dBm

Saturated Output Power (Psat) 25.5 28.5 28.5 dBm

Output Third Order Intercept (IP3) [2] 37 40 38 41 38 42 dBm

Noise Figure 8 6.5 5.2 dB

Supply Current (Icq) 150 175 150 175 150 175 mA

[1] Specifi cations and data refl ect HMC454ST89 measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.[2] Two-tone input power of 0 dBm per tone, 1 MHz spacing.

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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Input Return Loss

vs. Temperature @ 900 MHz

Output Return Loss

vs. Temperature @ 900 MHz

Broadband Gain

& Return Loss @ 900 MHz Gain vs. Temperature @ 900 MHz

P1dB vs. Temperature @ 900 MHz Psat vs. Temperature @ 900 MHz

-20

-15

-10

-5

0

5

10

15

20

25

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4

S21S11S22

RE

SP

ON

SE

(dB

)

FREQUENCY (GHz)

10

11

12

13

14

15

16

17

18

19

20

0.7 0.8 0.9 1 1.1 1.2

+25 C+85 C -40 C

GA

IN (

dB)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0.7 0.8 0.9 1 1.1 1.2

+25 C+85 C -40 C

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-20

-15

-10

-5

0

0.7 0.8 0.9 1 1.1 1.2

+25 C+85 C -40 C

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

20

21

22

23

24

25

26

27

28

29

30

0.7 0.8 0.9 1 1.1 1.2

+25 C+85 C -40 C

P1d

B (

dBm

)

FREQUENCY (GHz)

20

21

22

23

24

25

26

27

28

29

30

0.7 0.8 0.9 1 1.1 1.2

+25 C+85 C -40 C

PS

AT

(dB

m)

FREQUENCY (GHz)

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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Output IP3 vs. Temperature @ 900 MHz Noise Figure vs. Temperature @ 900 MHz

Gain, Power & Output IP3

vs. Supply Voltage @ 900 MHz

Reverse Isolation

vs. Temperature @ 900 MHz

34

35

36

37

38

39

40

41

42

43

44

0.7 0.8 0.9 1 1.1 1.2

+25 C+85 C -40 C

IP3

(dB

m)

FREQUENCY (GHz)

5

6

7

8

9

10

11

12

13

14

15

0.7 0.8 0.9 1 1.1 1.2

+25 C+85 C -40 C

NO

ISE

FIG

UR

E (

dB)

FREQUENCY (GHz)

-40

-35

-30

-25

-20

-15

-10

-5

0

0.7 0.8 0.9 1 1.1 1.2

+25 C+85 C -40 C

ISO

LAT

ION

(dB

)

FREQUENCY (GHz)

5

10

15

20

25

30

35

40

45

4.5 4.75 5 5.25 5.5

GAINP1dB

PSATIP3

GA

IN (

dB),

P1d

B (

dBm

), P

SA

T (

dBm

), IP

3 (d

Bm

)

Vs (V)

5.5V

5.0V

4.5V

-80

-75

-70

-65

-60

-55

-50

-45

-40

-35

-30

7 8 9 10 11 12 13 14 15 16 17 18 19

AC

PR

(dB

c)

Channel Output Power (dBm)

CDMA IS95Frequency : 880 MHzIntegration BW: 1.228 MHz Forward Link, 9 Channels

Source ACPR

ACPR vs. Supply Voltage @ 880 MHz

CDMA IS95, 9 Channels Forward

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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Input Return Loss

vs. Temperature @ 1960 MHz

Output Return Loss

vs. Temperature @ 1960 MHz

Broadband Gain

& Return Loss @ 1960 MHz Gain vs. Temperature @ 1960 MHz

P1dB vs. Temperature @ 1960 MHz Psat vs. Temperature @ 1960 MHz

-25

-20

-15

-10

-5

0

5

10

15

20

25

1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3

S21S11S22

RE

SP

ON

SE

(dB

)

FREQUENCY (GHz)

5

6

7

8

9

10

11

12

13

14

15

1.7 1.8 1.9 2 2.1 2.2

+25 C+85 C -40 C

GA

IN (

dB)

FREQUENCY (GHz)

-20

-15

-10

-5

0

1.7 1.8 1.9 2 2.1 2.2

+25 C+85 C -40 C

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

1.7 1.8 1.9 2 2.1 2.2

+25 C+85 C -40 C

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

22

23

24

25

26

27

28

29

30

31

32

1.7 1.8 1.9 2 2.1 2.2

+25 C+85 C -40 C

P1d

B (

dBm

)

FREQUENCY (GHz)

22

23

24

25

26

27

28

29

30

31

32

1.7 1.8 1.9 2 2.1 2.2

+25 C+85 C -40 C

PS

AT

(dB

m)

FREQUENCY (GHz)

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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Output IP3 vs. Temperature @ 1960 MHzNoise Figure

vs. Temperature @ 1960 MHz

Gain, Power & Output IP3

vs. Supply Voltage @ 1960 MHz

Reverse Isolation

vs. Temperature @ 1960 MHz

34

35

36

37

38

39

40

41

42

43

44

1.7 1.8 1.9 2 2.1 2.2

+25 C+85 C -40 C

IP3

(dB

m)

FREQUENCY (GHz)

0

1

2

3

4

5

6

7

8

9

10

1.7 1.8 1.9 2 2.1 2.2

+25 C+85 C -40 CN

OIS

E F

IGU

RE

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

1.7 1.8 1.9 2 2.1 2.2

+25 C+85 C -40 C

ISO

LAT

ION

(dB

)

FREQUENCY (GHz)

5

10

15

20

25

30

35

40

45

4.5 4.75 5 5.25 5.5

GAINP1dB

PSATIP3

GA

IN (

dB),

P1d

B (

dBm

), P

SA

T (

dBm

), IP

3 (d

Bm

)

Vs (V)

ACPR vs. Supply Voltage @ 1.96 GHz

CDMA 2000, 9 Channels Forward

ACPR vs. Supply Voltage @ 2.14 GHz

W-CDMA, 64 DPCH

4.5V

-70

-65

-60

-55

-50

-45

-40

-35

-30

0 2 4 6 8 10 12 14 16 18 20

AC

PR

(dB

c)

Channel Output Power (dBm)

WCDMAFrequency : 2.14 GHzIntegration BW: 3.84 MHz64 DPCH

5.5V

Source ACPR

5.0V

5.5V

5.0V

4.5V

-85

-80

-75

-70

-65

-60

-55

-50

-45

-40

2 4 6 8 10 12 14 16 18 20 22

AC

PR

(dB

c)

Channel Output Power (dBm)

CDMA2000 Rev. 8Frequency : 1.96 GHzIntegration BW: 1.228 MHzForward Link, SRI, 9 CHANNELS

Source ACPR

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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Outline Drawing

Absolute Maximum Ratings

Collector Bias Voltage (Vcc) +6.0 Vdc

RF Input Power (RFIN)(Vs = +5Vdc) +25 dBm

Junction Temperature 150 °C

Continuous Pdiss (T = 85 °C)(derate 13.6 mW/°C above 85 °C)

0.890 W

Thermal Resistance(junction to ground paddle)

73 °C/W

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +85 °C

Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]

HMC454ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H454XXXX

HMC454ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H454XXXX

[1] Max peak refl ow temperature of 235 °C[2] Max peak refl ow temperature of 260 °C[3] 4-Digit lot number XXXX

Package Information

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS].

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

ELECTROSTATIC SENSITIVE DEVICEOBSERVE HANDLING PRECAUTIONS

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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900 MHz Application Circuit, Compact Layout

Recommended Component Values

L1, L2 1 nH

L3 36 nH

R1 5.1 Ohms

C1 8 pF

C2 22 pF

C3 2.7 pF

C4, C6 100 pF

C5 2.2 μF

TL1

Impedance 50 Ohm

Physical Length 0.050”

Electrical Length 2.5°

PCB Material: 10 mil Rogers 4350, Er = 3.48

This circuit was used to specify the performance for 894-960 MHz operation. This circuit will satisfy many applications from 700 to 1200 MHz. Contact the HMC Applications Group for assistance in optimizing performance for your application.

Pin Descriptions

Pin Number Function Description Interface Schematic

1 RFINThis pin is AC coupled.

Off chip matching components are required. See Application Circuit herein.

3 RFOUTRF output and DC Bias input for the output amplifi er stage.

Off chip matching components are required. See Application Circuit herein.

2,4 GNDThese pins & package bottom must be connected to

RF/DC ground.

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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900 MHz Evaluation PCB

The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appro-priate heat sink. The evaluation circuit board shown is available from Hittite upon request.

List of Materials for Evaluation PCB 107755 [1]

Item Description

J1 - J2 PCB Mount SMA Connector

J3 -J4 DC Pins

C1 8 pF Capacitor, 0402 Pkg.

C2 22 pF Capacitor, 0402 Pkg.

C3 2.7 pF Capacitor, 0402 Pkg.

C4, C6 100 pF Capacitor, 0402 Pkg.

C5 2.2 μF Capacitor, Tantalum

L1, L2 1 nH Inductor, 0402 Pkg.

L3 36 nH Inductor, 0402 Pkg.

R1 5.1 Ohms

U1HMC454ST89 / HMC454ST89ELinear Amp

PCB [2] 107753 Evaluation PCB, 10 mils

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350, Er = 3.48

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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1960 & 2140 MHz Application Circuit

Recommended Component Values

L1 8.2 nH

C1 1 pF

C2 1.2 pF

C3 3 pF

C4 100 pF

C5 2.2 μF

TL1 TL2 T3 TL4

Impedance 50 Ohm 50 Ohm 50 Ohm 50 Ohm

Physical Length 0.32” 0.10” 0.07” 0.17”

Electrical Length 34° 11° 8° 18.5°

PCB Material: 10 mil Rogers 4350, Er = 3.48

This circuit was used to specify the performance for 1800-2000 and 2000-2200 MHz operation. This circuit will satisfy many applications from 1700 to 2500 MHz. Contact the HMC Applications Group for assistance in optimizing performance for your application.

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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1960 & 2140 MHz Evaluation PCB

The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appro-priate heat sink. The evaluation circuit board shown is available from Hittite upon request.

List of Materials for Evaluation PCB 107749 [1]

Item Description

J1 - J2 PCB Mount SMA Connector

J3 - J4 DC Pins

C1 1.0 pF Capacitor, 0402 Pkg.

C2 1.2 pF Capacitor, 0402 Pkg.

C3 3.0 pF Capacitor, 0402 Pkg.

C4 100 pF Capacitor, 0402 Pkg.

C5 2.2 μF Capacitor, Tantalum

L1 8.2 nH Inductor, 0402 Pkg.

U1 HMC454ST89 / HMC454ST89E

PCB [2] 107747 Evaluation PCB, 10 mils

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350, Er = 3.48

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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Recommended Component Values

L1 18 nH

C1 4 pF

C2, C6 10 pF

C3 3 pF

C4 100 pF

C5 2.2 μF

TL1 TL2 TL3

Impedance 50 Ohm 50 Ohm 50 Ohm

Physical Length 0.35” 0.05” 0.53”

Electrical Length 18° 2.5° 27°

PCB Material: 10 mil Rogers 4350, Er = 3.48

Broadband Gain & Return Loss

-15

-10

-5

0

5

10

15

20

25

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4

S21S11S22

RE

SP

ON

SE

(dB

)

FREQUENCY (GHz)

20

25

30

35

40

45

50

0.7 0.8 0.9 1 1.1 1.2

IP3P1dB

IP3

(dB

m),

P1d

B (

dBm

)

FREQUENCY (GHz)

Output IP3 & P1dB

Alternative 900 MHz Application Circuit, Optimal OIP3 Layout

This alternate application circuit for 900 MHz applications features a resonating I/O structure on the PCB that, while using more PCB area, will improve output IP3 from +40 dBm to +42 dBm. This circuit will satisfy many applications from 700 to 1200 MHz as the typical performance below demonstrates. Contact the HMC Applications Group for assistance in optimizing performance for your application.

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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Alternate 900 MHz Evaluation PCB

The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appro-priate heat sink. The evaluation circuit board shown is available from Hittite upon request.

List of Materials

Item Description

J1 - J2 PCB Mount SMA Connector

J3 - J4 DC Pins

C1 4 pF Capacitor, 0402 Pkg.

C2, C6 10 pF Capacitor, 0402 Pkg.

C3 3.0 pF Capacitor, 0402 Pkg.

C4 100 pF Capacitor, 0402 Pkg

L1 18 nH Inductor, 0402 Pkg.

U1 HMC454ST89 / HMC454ST89E

PCB* 107750 Evaluation PCB, 10 mils

* Circuit Board Material: Rogers 4350, Er = 3.48

HMC454ST89 / 454ST89Ev05.0710

InGaP HBT ½ WATT HIGH IP3

AMPLIFIER, 0.4 - 2.5 GHz