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An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.) Vinayakam Subramanian, Dr. Ji Zheng (Apache Design Solutions Inc.)

An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

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Page 1: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR

I/O interface

Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

Vinayakam Subramanian, Dr. Ji Zheng (Apache Design Solutions Inc.)

Page 2: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

Introduction Needs:

Memory interface performance validation is becoming increasingly complex

Increasing speeds, design configurations, design cost optimization in die, package, board

Lower supply voltages allow for lower noise margins (due to SSO/SSN, crosstalk, ISI) on I/O performance metrics.

Look-ahead and comprehensive analysis needed during IO placement/package prototyping early analysis, signoff

Challenges: SSO/SSN analysis is a coupled Signal-Integrity and Power-Integrity problem.

Requires concurrent modeling and simulation of the chip-package-board Signal delivery network (SDN) and power delivery network (PDN).

Combine the varying (and often conflicting) simulation requirements of the SDN and PDN.

Requires a robust and automated environment to seamlessly integrate the system-level model constituents.

Needs to overcome the challenge of computation complexity of traditional simulations using transistor-level model of the I/O circuits.

An “ideal” SSO/SSN analysis methodology needs to accurately trade off between accuracy and efficiency of modeling, extraction and simulation flows

An “ideal” SSO/SSN analysis methodology needs to accurately trade off between accuracy and efficiency of modeling, extraction and simulation flows2

Page 3: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

Proposed I/O Characterization Methodology An efficient and accurate “system-level” methodology for characterization of LPDDR I/Os

has been presented.

The proposed flow leverages the underlying physics of the SSO/SSN to optimize the modeling and simulation of the system-level constituents

System-level silicon measurements on a actual product have been performed to benchmark the accuracy of the proposed flow

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Page 4: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

Sentinel-SSO Methodology (1/2)

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Page 5: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

Sentinel-SSO Methodology (2/2)

Aggressor Modeling MethodologyAggressor Modeling Methodology

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Page 6: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

Performance benefit from Sentinel-SSO Macromodel

More than 2X performance improvement with negligible loss in accuracy

– 5hrs 10mins with full transistor level spice model for all the DDR bank IOs

– 2hrs 20mins with Sentinel-SSO Macromodel for all IOs except victim and two aggressors on each side

Red : Full Transistor model-based SPICE simulation

Blue: Sentinel-SSO macromodel-based simulation

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Page 7: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

Model-to-hardware correlation Silicon validation platform was set up with the device-memory interface. Software code was prepared to exercise the memory interface with minimal extraneous SOC activity. TDR measurements (for passive channel characterization) and link RLGC/S-parameter parasitic model

generation Micro-probing of data/strobe bit waveforms during LPDDR WRITE transactions (under controlled

environment) Noise measurements on Power Distribution network during LPDDR switching activity

7Block schematic of the hardware setup

Page 8: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

TDR Simulation Flow

Import of Memory PCB layout in Sentinel-PSI

Import of Memory PCB layout in Sentinel-PSI

Model reduction, Technology stack-up, port-setup, analysis settings

Model reduction, Technology stack-up, port-setup, analysis settings

Parasitic extraction and s-parameter model output

Parasitic extraction and s-parameter model output

SPICE analysis with TDR pulse (@ probe locations) on extracted PCB

model

SPICE analysis with TDR pulse (@ probe locations) on extracted PCB

model

Overlay with measurement dataOverlay with measurement data

Import of Memory PCB, intermediate PCB, CHIP PCB layouts in Sentinel-

PSI

Import of Memory PCB, intermediate PCB, CHIP PCB layouts in Sentinel-

PSI

Model reduction, Technology stack-up, port-setup, analysis settings for

each PCB

Model reduction, Technology stack-up, port-setup, analysis settings for

each PCB

Parasitic extractions and s-parameter model outputs

Parasitic extractions and s-parameter model outputs

SPICE analysis with TDR pulse (@ probe locations) on cascaded PCB

models

SPICE analysis with TDR pulse (@ probe locations) on cascaded PCB

models

Overlay with measurement dataOverlay with measurement dataSimulation Flow with only Memory PCB

Simulation flow with full CHIP-MEMORY channel

Addition of socket modelsAddition of socket models

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Page 9: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

TDR characterization of memory and full channel (CHIP-to-MEMORY )

//i.cmpnet.com/planetanalog/features/Ansoft_flex/Fig4.jpg

Depiction of data bit routing (on DDR PCB w/o DDR IC) characterization with TDR setup

Red : SimulationGreen: Measurement

Model-to-hardware correlationTime (ps)

Imp

edan

ce (

ohm

s)

TDR methodology

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Page 10: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

SSO-SSN Simulation Flow

Import of Memory PCB, intermediate PCB, CHIP PCB

layouts in Sentinel-PSI

Import of Memory PCB, intermediate PCB, CHIP PCB

layouts in Sentinel-PSI

Model reduction, Technology stack-up, port-setup, analysis settings for

each PCB

Model reduction, Technology stack-up, port-setup, analysis settings for

each PCB

Parasitic extractions and coupled SI/PI s-parameter model outputs

Parasitic extractions and coupled SI/PI s-parameter model outputs

Addition of socket modelsAddition of socket models

Import of package in 3D EM ToolImport of package in 3D EM Tool

Model reduction, Technology stack-up, port-setup, analysis

settings for package

Model reduction, Technology stack-up, port-setup, analysis

settings for package

Parasitic extractions and coupled SI/PI s-parameter model outputs

Parasitic extractions and coupled SI/PI s-parameter model outputs

Output coupled SI/PI s-parameter model of package

Output coupled SI/PI s-parameter model of package

CHIP databaseCHIP database Sentinel-SSO connectivity and Sentinel-SSO connectivity and simulation frameworksimulation framework

Sentinel-SSO connectivity and Sentinel-SSO connectivity and simulation frameworksimulation framework

O/P waveform, timing data

O/P waveform, timing data

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Page 11: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

Supply bounce with activity

Pk-to-pk noise on VDDS-VSSS is ~230 mV(no MPU activity)

Yellow: DQS2Cyan: DQ22Magenta: CLKN/CLKPGreen: VDDS-VSSS

Measurement waveform capture: DQ22/DQS2/CLK/VDDS-VSSS (@100 MHz)

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Page 12: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

Model-to-hardware correlation for data waveform

Red : SimulationGreen: Measurement

Time (ns)

Vol

tage

(v)

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Page 13: An accurate and efficient SSO/SSN simulation methodology for 45 nm LPDDR I/O interface Dr. Souvik Mukherjee, Dr. Rajen Murugan (Texas Instruments Inc.)

Conclusions

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-  Develop an efficient IO macromodeling capability to analyze system-level SSO/SSN on a high-speed digital memory interface.

   Demonstrated on an LPDDR memory interface for a 45nm SoC design.

Established model-to-hardware correlation.

   Innovative capability that alleviates the burden of traditional methodologies that are computationally prohibitive.