32514HK TC-00002974/62012TKIM/D2409TKIM PE No. A1566-1/5

http://onsemi.com

Semiconductor Components Industries, LLC, 2014March, 2014

MCH6445N-Channel Power MOSFET60V, 4A, 78mΩ, Single MCPH6

ORDERING INFORMATIONSee detailed ordering and shipping information on page 2 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Features • 4V drive • Low ON-resistance • Protection diode in

SpecificationsAbsolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS 60 V

Gate-to-Source Voltage VGSS ±20 V

Drain Current (DC) ID 4 A

Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 16 A

Allowable Power Dissipation PD When mounted on ceramic substrate (1500mm2×0.8mm) 1.5 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Package Dimensions unit : mm (typ)7022A-009

Ordering number : ENA1566B

Product & Package Information• Package : MCPH6

• JEITA, JEDEC : SC-88, SC-70-6, SOT-363

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL Marking

Electrical Connection

3

4

1, 2, 5, 61 : Drain2 : Drain3 : Gate4 : Source5 : Drain6 : Drain

MCPH6

2.0

0.25

1.6

2.1

0.25

0.85

0.30.65

0.15

0 to 0.02

0.07

6 5 4

1 2 3

6 5 4

1 2 3 TL

ZU

LOT N

o.

LOT N

o.

MCH6445-TL-EMCH6445-TL-W

MCH6445

No. A1566-2/5

Electrical Characteristics at Ta=25°C

Parameter Symbol ConditionsRatings

Unitmin typ max

Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V

Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 mA

Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 mA

Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V

Forward Transfer Admittance | yfs | VDS=10V, ID=2A 3 S

Static Drain-to-Source On-State Resistance

RDS(on)1 ID=2A, VGS=10V 60 78 mΩRDS(on)2 ID=1A, VGS=4.5V 74 104 mΩRDS(on)3 ID=1A, VGS=4V 81 114 mΩ

Input Capacitance Ciss

VDS=20V, f=1MHz

505 pF

Output Capacitance Coss 57 pF

Reverse Transfer Capacitance Crss 37 pF

Turn-ON Delay Time td(on)

See specified Test Circuit.

7.3 ns

Rise Time tr 9.8 ns

Turn-OFF Delay Time td(off) 40 ns

Fall Time tf 24 ns

Total Gate Charge Qg

VDS=30V, VGS=10V, ID=4A

10 nC

Gate-to-Source Charge Qgs 1.6 nC

Gate-to-Drain “Miller” Charge Qgd 2.1 nC

Diode Forward Voltage VSD IS=4A, VGS=0V 0.82 1.2 V

Switching Time Test Circuit

Ordering InformationDevice Package Shipping memo

MCH6445-TL-EMCPH6 3,000pcs./reel

Pb-Free

MCH6445-TL-W Pb-Free and Halogen Free

PW=10msD.C.≤1%

10V0V

VIN

P.G 50Ω

G

S

ID=2ARL=15Ω

VDD=30V

VOUTVIN D

MCH6445

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

MCH6445

No. A1566-3/5

ID -- VDS ID -- VGS

Drain-to-Source Voltage, VDS -- V

Dra

in C

urre

nt, I

D -

- A

Gate-to-Source Voltage, VGS -- V

Dra

in C

urre

nt, I

D -

- A

2.0

3.0

5.5

6.0

1.0

1.5

4.0

2.5

3.5

0.5

4.5

5.0

00

1.0

2.0

4.0

4.5

0.20.1

3.0

1.5

0.5

2.5

3.5

00.4 1.00.80.60.3 0.5 0.90.7

IT13789

0 0.5 1.0 2.0 3.01.5 2.5 3.5 4.0

IT13790

Ta=7

5°C

--25°

C

4.0V 3.5

V

3.0V

VDS=10V

15.0

V10

.0V

25°C

4.5V

VGS=2.5V

7.0V

SW Time -- ID Ciss, Coss, Crss -- VDS

IS -- VSD| yfs | -- ID

Drain Current, ID -- A

Switc

hing

Tim

e, S

W T

ime

-- n

sFo

rwar

d T

rans

fer A

dmitt

ance

, | y

fs |

-- S

Diode Forward Voltage, VSD -- V

Sour

ce C

urre

nt, I

S --

A

Drain-to-Source Voltage, VDS -- V

Cis

s, C

oss,

Crs

s --

pF

Drain Current, ID -- A

RDS(on) -- Ta

Stat

ic D

rain

-to-

Sour

ceO

n-St

ate

Res

ista

nce,

RD

S(on

) --

mΩ

Ambient Temperature, Ta -- °C

RDS(on) -- VGS

Stat

ic D

rain

-to-

Sour

ceO

n-St

ate

Res

ista

nce,

RD

S(on

) --

mΩ

Gate-to-Source Voltage, VGS -- V

5

3

2

3

2

7

7

5

10

IT13795

IT13793

0.1 1.02 3 5 7 2 3 5 7 0 20 4010 30 50 60

100

10

2

1000

7

5

3

2

7

5

3

IT13796

IT13794

0.2 0.4 0.6 0.8 1.0 1.20.01

0.175

3

2

2

1.075

3

2

VGS=0V--2

5°C

25°C

Ta=7

5°C

td(on)

td(off)

tf

t r

VDD=30VVGS=10V Ciss

Coss

Crss

f=1MHz

0.01

0.1

0.12 73 5 2 102 73 51.073 5

1.0

7

5

3

2

2

7

7

5

3

VDS=10V

75°CTa= --2

5°C

25°C

1075

3

IT13792

--6020

120

40

90

70

140

60

30

50

100

130

150

110

80

160

--40 --20 0 20 40 60 80 100 120 140 160

VGS=4.5V, ID=1A

VGS=10.0V, ID=2AVGS=

4.0V, ID=1A

0 4 8 12 142 6 10 16

IT13791

170

30

40

60

50

70

90

80

130

110

100

140

120

160

150

Ta=25°C

ID=1A2A

MCH6445

No. A1566-4/5

IT150730.1 1.02 3 5 2 3 5 77 2

0.01

2

0.1

3

57

2

1.0

3

57

2

IDP=16A

ID=4A

PW≤10ms

100ms

DC operation (Ta=25°C)

1ms

100ms

10ms

Operation in this areais limited by RDS(on).

10 1003 5 7

10

3

23

57

VGS -- Qg

Total Gate Charge, Qg -- nC

Gat

e-to

-Sou

rce

Vol

tage

, VG

S --

V

0 4 7 962 3 51 8 100

4

6

8

10

9

7

5

1

2

3

IT13797

VDS=30VID=4A

A S O

Drain-to-Source Voltage, VDS -- V

Dra

in C

urre

nt, I

D -

- A

Ta=25°CSingle pulseWhen mounted on ceramic substrate (1500mm2×0.8mm)

PD -- Ta

Ambient Temperature, Ta -- °C

Allo

wab

le P

ower

Dis

sipa

tion,

PD

--

W

0

0.2

1.2

1.61.51.4

1.0

0.8

0.6

0.4

1.8

0 20 40 60 80 100 120 140 160

IT15074

When mounted on ceramic substrate(1500mm2×0.8mm)

MCH6445

PS No. A1566-5/5

Note on usage : Since the MCH6445 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.

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Outline Drawing Land Pattern Example MCH6445-TL-E, MCH6445-TL-W

Mass (g) Unit

0.008* For reference mm

Unit: mm

0.65 0.65

0.4

2.1

0.6