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PH[ DICTIVE STUDIES OF STRUCTURE AND OTHER PROPERTIES OF CARBON NANOTUBES AND OTHER CLUSTERS USING VARIOUS SIMULAFION TECHNIQUES ABSTRACT OF THE THESIS SUBMITTED FOR THE AWARD OF THE DEGREE OF m APPLIED PHYSICS Submitted By RASHID NIZAM UNDER THE SUPERVISION OF DR. AMEER AZAIVi Co Supervisor PROF S. MAHDI A. RIZVI Supervisor DEPARTMENT OF APPLIED PHYSICS FAC J..TY OF ENGINEERING AND TECHNOLOGY ALIGARH IViUSLIM UNIVERSITY ALIGARH (INDIA) 2012

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Page 1: ABSTRACT THESIS - COnnecting REpositories · Phone{office : (0571) 2703176 ext. 3035 } Department of Applied Physics Z.H. College of Engineering & Technology ALIGARH MUSLIM UNIVERSITY,

PH[ DICTIVE STUDIES OF STRUCTURE AND OTHER PROPERTIES OF CARBON NANOTUBES AND OTHER CLUSTERS

USING VARIOUS SIMULAFION TECHNIQUES

ABSTRACT OF THE

THESIS

SUBMITTED FOR THE AWARD OF THE DEGREE OF

m APPLIED PHYSICS

Submitted By

RASHID NIZAM

UNDER THE SUPERVISION OF

DR. AMEER AZAIVi Co Supervisor

PROF S. MAHDI A. RIZVI Supervisor

DEPARTMENT OF APPLIED PHYSICS FAC J..TY OF ENGINEERING AND TECHNOLOGY

ALIGARH IViUSLIM UNIVERSITY ALIGARH (INDIA)

2012

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Abstract

The present research work is based on use of computational techniques for

detcimination of electronic and vibrational properties on nanostructures such as carbon

i/anotubes with and without defects, flillerenes and some of derivatives of fullerene. The

rianostructures presently investigated, namely: the perfect carbon nanotubes (FCNTs); carbon

".anotubes with Intiaraolecular Junctions (CNT-lMJs); Cfio; CsoO; and CeoBrg have been

found to possess novel properties with numerous applications. In the present work band

structures of different CNTs such as the armchair, the zigzag and the chiral have been

^"'culated. Calculations of Electron Density of States (DOS) and Local Density of States

(LDOS) along with the electronic, transmission through these nanotubes with the help of the

Tight-Binding Method [14, 15] have been carried out. Various combinations of PCNTs are

corsidered for different types of Intramolecular Molecular Junctions (IMJs). Studies have

been performed for three different types of Intramolecular Junctions: Ihe circumferential type

of IMJs; the distributed type and the grouped type of defects. Numerical results have also

beeii obtained for these defects in semiconductor-semiconductor (S-S), metallic-metallic (M-

M) and semiconductor-metallic (S-M) combinations. A semiconductor-metallic junction is

equivalent to a Schottky diode.

The band gaps of different types of perfect carbon nanotubes (PCNTs) are obtained in

the range of 0.3 nm to 3.9355 nm diameters and compared with available results. It is found

':hat the band gaps of semiconducting and chiral PCNTs decrease inversely with increase in

diameter and become constant at higher diameter values. The electron transmission has been

calculated in a number of PCNTs of varying chiraUty. It is well known that the armchair

PCNTs and some of the zigzag PCNTs are metallic in r atufe and have transmission value of

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2 units (number of channels) at Fermi level. The results of present calculations establish the

fact that with increase in diameter, for both the metallic and semiconducting PCNTs, the

electron energy at Fermi level decreases. For example, in an armchair (3, 3) the first

semiconducting band opens at 2.31 eV of electron energy while for a bigger armchair PCNT

(6, 6) the energy value is 1.33 eV.

The structure of carbon nanotube with Intramolecular Junction (CNT-IMJ) is much

more complex than simple carbon nanotubes and exhibit significant variation in electronic

band structure and other properties. In the present work tlu-ee different kinds of CNT- IMJ

structures: the circumferential; the distributed; and the grouped IMJs are studied in some

detail. The Local Density of States (LDOS) for circumferential type of IMJs is calculated and

compared with the component PCNTs. The transmission and the band gaps of the above

mentioned three types of defects is investigated for various combinations of CNTs such as

metallic-metallic (M-M), semiconductor-semiconductor (S-S) and semiconductor-metallic

(S-M).

Three different structural configurations of fullerene, the Mlerene Ceo, oxygen doped

fiillerene CeoO, and bromine doped flillereneCeoBreare investigated to obtain their vibrational

spectra. CeoO is found to exist as two isomers - CeoO [5, 6] and CeoO [6, 6].The Infrared

spectroscopy and the Raman spectroscopic studies are carried out for prediction of

vibrational spectra using Hartree-Fock Method at roora temperature. The present calculations

of Infi ared and Raman spectra for Ceowere compared with the available computational and

experimental data with good results. It is found that the present numerical Infi-ared results of

C6oO [5, 6] show greater similarity with the available experimental IR data of CeoO as

compared to its isomer CeoO [6, 6] at room temperature. This is opposed to the available

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results where CeoO [6, 6] isomer was found to be more stable. The calculations have also

been performed to obtain Raman spectrum of C6oBr6 and these results are compared with the

reported computational and the experimental data.

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pPE^"^^'"^^^VESTiJ0itS0FS1 , S Or T" "

USING VARIOUS L. . . . . . ^^ . - . . ECHNiQUES

UNDI

•~i. i s d c r\ r^i,., —i'-«!

Co-Supervisor

DEPA^ FACULTY C

AL

«

'' ^^' j . ? ^ . : : i w' 5 -"' ^-* *

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/ -

T8850

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DEPARTMENT OF MECHANICAL ENGINEERING ALIGARH MUSLIM UNIVERSITY, ALIGARH- 202002

Prof. S. Mahdi Abbas Rizvi Ph.D. (Imperial col., London) Office ; (0571)-2721335

Res - 2720624 Fax -2701454

E_mail:[email protected]

31.12.2012

CERTIFICATE

This is to certify that the thesis entitle(3'. "Predictive Studies of

Structure and other Proji)er|ies of Carbon Nanotiibes and other Clusters

using Various Simulation Techniques", submitted to the Department of

Applied Physics, Faculty of Engiaeenri.^/, and..,Technology, Aligarh Muslim

University, Aligarh is in partial fulfilrrieh! of the requirement of the award of

degree of Doctor of Philosophy, is an original contribution with the existing

knowledge and faithful record of research carried out by Mr. Rashid Nizam

under my guidance and supervision.

To the best of my knowledge this work has not been submitted in part

or full for any Degree or Diploma to this University or elsewhere.

I further certify that Mr. Rashid Nizam has fulfilled the requirements of

Aligarh Muslim University, Aligarh for the submis^ioivotPh.D. thesis.

'rof. S. Mahdi Abbas Rizvi) Supervisor

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Phone{office : (0571) 2703176 ext. 3035 }

Department of Applied Physics Z.H. College of Engineering & Technology

ALIGARH MUSLIM UNIVERSITY,

ALIGARH - 202 002

Ref.. No. Dated

CERTIFICATE

This is to certify that the thesis entitled "Predictive Studies of Structure and other

Properties of Carbon Nanotubes and other Clusters using Various Simulation

Techniques", which is submitted to the Department of Applied Physics, Faculty of

Engineering and Technology, Aligarh Muslim University, Aligarh in partial fulfillment

of the requirement for the award of the degree of Doctor of Philosophy, is an original

contribution with existing knowledge and faithful record of research carried out by

Mr. Rashid Nizam under our guidance and supervision.

To the best of our knowledge this work has not been submitted in part or full for any

Degree or Diploma to this University or elsewhere.

We, further, certify that Mr. Rashid Nizam has fulfilled the requirements of

Aligarh Muslim University, Aligarh for the submission of Ph.D. thesis.

iJ

(Dr. S. Mahdi A. Rizvi) Supervisor

(Dr. Ameer Azam) Co-Supervisor

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Contents Page

Contents iii

Acknowledgements vi

List of Tables vii

List of Figures viii

Glossary of Symbols xii

Chapter - 1 : Introduction 1

1.1 Preamble 1

1.2 Objective of the Present Study 4

1.3 Previous and Related Work 6

1.4 Molecular Modehng Methods 11 1.4.1 First Principles Method - Hartree-Fock Method (HF) 12 1.4.2 Density Functional Theory 12 1.4.3 Semi-Empirical Methods - Tight Binding Method (TBM) 13 1.4.4 Empirical Method - Molecular Mechanics Method (MMM)14

1.5 Present Contribution 14

1.6 Layout of the Thesis 16

Chapter - 2: Physical Structure and Properties of Carbon Nanotubes, Fuilerene and its Derivatiyes 18

2.1 Introduction 18

22 Physical Structure 18

2.2.1 Perfect Carbon Nanotube (PCNT) 18 2.2.2 Carbon Nanotube with Intramolecular Junction (CNT-IMJ) 22 2.2.3 Types of Intramolecular Junctions in CNTs 23 2.2.4 Fuilerene Buckyball 24 2.2.5 Oxygen Doped Fuilerene (CeoO) and its Isomer 27 2.2.6 Bromine Doped Fuilerene (CeoBre) 27

2J Electronic Properties of PCNTs 28 2.3.1 Energy Gap 28

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2.3.2 Electron Density of States (DOS) and Local Density of States (LDOS) 29

2.3.3 Electron Transmission 30

Chapter - 3: Spectroscopic Studies of Nanostructures 32

3.1 Introduction 32

3.2 Raman Spectroscopy 33 3.2.1 Classical Description of Raman Spectroscopy 34 3.2.2 Quantum mechanical treatment of Raman Spectroscopy 36

3.3 Infrared Spectroscopy 45

C h a p t e r - 4; Predictions of Band Structures and Electronic Transportation of Perfect Carbon Nanotubes and CNTs with Intramolecular Junction 54

4.1 Introduction 54

42 Band Structure - Perfect Carbon Nanotubes (PCNTs) 56 4.2.1 Types of Nanotubes Studied 57 4.2.2 Calculations of Energy Gap 57 4.2.3 Electron Density of States (DOS) 66

4.3 Electronic Transportation in PCNTs and CNTs with Intramolecular

Junction (CNT-IMJ) 68

4.3.1 PCNTs Used for Calculations of Transmission 70

4.3.2 Predicting Transmission of Electrons through PCNTs 70 4.3.3 CNT with Intramolecular Junctions (CNT-IMJs) 77

4.3.3.1 Introduction 77 4.3.3.2 CNTs with Circumferential Type IMJ 77 4.3.3.3 Electron Local DOS (LDOS) of CNT-IMJ

(Circumferential) 81 4.3.3.4 Electron Transmission through CNT-IMJs

(Circumferential) 86 4.3.3.5 CNTs with Other Types of Junctions 89 4.3.3.6 Electron Transmission through CNTs Different Types

of Junctions 92 4.3.3.6 (a) Transmission through Semiconductor -

Semiconductor (S-S) IMJ 92 4.3.3.6 (b) Transmission through Metallic - Metallic (M-M)

IMJ 98 4.3.3.6 (c) Transmission through Semiconductor - Metallic

(S-M) IMJ (CNT-Schottky Diodes) 99

iv

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Chapter - 5: Predictions of Infrared Spectra of FuUerene and Its Derivatives 103

5.1 Introduction 103

5.2 Infrared Spectra - Results and Discussion 103

5.2.1 (a) FuUerene (Ceo) 103 5.2.1 (b) Results of Calculation for Cgo Infrared Spectrum 104

5.2.2 Infrared Spectra of Oxygen Doped FuUerene (CeoO) 110 5.2.2 (a) Structure of CeoO Isomers: CeoO [5,6] and C^O [6,6] 5.2.2 (b) Calculation Results of Infrared Spectra of Isomers

CfioO [5,6] and CfioO [6,6] 111

5.2.3 Bromine Doped FuUerene 120 5.2.3 (a) Structure of CeoBre 120 5.2.3 (b) Infrared Spectrum of Bromine Doped FuUerene 121

Chapter - 6: Prediction of Raman Spectra of Qn and Its Derivatives 125

6.1 Introduction 125

6.2 Raman Spectra - Calculations and Results 126 6.2.1 (a) FuUerene (Ceo) 126 6.2.1 (b) Results of Ceo Raman Spectrum 127

6.2.2 Raman Spectra of Oxygen Doped FuUerene (CeoO) 130 6.2.2(a) Structure of CeoO Isomers: 130 6.2.2(b) Raman Spectra of CeoO [5,6] and CeoO [6,6] 130

6.2.3 Bromine Doped FuUerene 135 6.2.3(a) Structure configuration - CeoBre 135 6.2.3(b) Raman Spectrum of CeoBre 136

Chapter - 7: Concluding Remarks and Scope for Future Work 143

7.1 Introduction 143

7.2 Concluding Remarks 143

7.3 Proposals for Future Work 145

References 147

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Acknowledgements

First and foremost, I offer my sincere gratitude to my supervisor, Dr. S. Mahdi. A. Rizvi,

Professor, Department of Mechanical Engineering who has provided all kind support for

completion of my thesis. His patience, knowledge and providing appropriate suggestions, as

and when I required, gave me proper direction in my research work and without him; this

thesis would not have been completed or vmtten. One simply could not wish for a better or

friendlier supervisor.

I would like to express my deep sense of gratitude to my co-supervisor Dr. Ameer

Azam, Assistant Professor; Dr. S. Alim H. Naqvi; Professor, Dr. Alimuddin Professor and

the Chairman, Department of Applied Physics, for extending all kind of Departmental

facilities required for the completion of this work. I am grateful to the staff of Department of

Mechanical Engineering, my colleagues and friends for their assistance in the compilation of

the thesis.

I would like to take this opportunity to thank my parents for their cooperation and the

support, especially during difficult and testing times. I thank my two brothers for standing by

me and shouldering responsibilities of the family, thereby, allowing me to concentrate on the

research.

iliid Ni Rasnid Nizam

VI

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List of Tables

Table Caption Page

3.1 Raman Tensors of the carbon structure 42

4.1 Comparison of the band gaps of different PCNTs with increase in diameters....64

4.2 PCNTs used for Calculations of Electronic Structure 69

4.3 Different Combinations of PCNTs with Circumferential Type CNT-IMJs 78

4.4 Cases considered for transmission calculations for CNT- IMJs 90

4.5 Band gaps for various IMJs 95

5.1 Comparison of calculated Infrared spectrum with the experimental spectrum ofC,o '. '. 108

5.2 Structure parameters for C^o HO

5.3 Results of calculation ofC6oO[5, 6] 113

5.4 Results of calculation of C^oO [6, 6] 113

5.5 Infrared spectrum ofC^oO 118

5.6 Structure Parameters ofdoBr^ 122

5.7 Infrared spectrum ofC^oBrs 124

6.1 Comparison of calculated Raman spectra with the experimental data for C^o -129

6.2 Raman Spectrum ofC^OlS, 6] 133

6.3 Raman Spectrum ofCioO[6, 6] 134

6.4 Raman Spectra ofC^oBrf, 138

Vll

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List of Figures

Figure Caption Page

2.1 The unrolled honeycomb lattice of a nanotube. When the lattice sites O and A, and sites B and B' are connected, a nanotube can be constructed. OA and OB define the chiral vector C^ and the translational vector Tof the nanotube, respectively. The rectangle OAB'B defines the unit cell for the nanotube. The figure is constructed for a = (4, 2) nanotube fref 6J... 19

2.2 (a) The zigzag structure (n, 0), (b) the armchair structure (n, n) and (c) the chiral structure (n, m); n^m 20

2.3 (a) The unit cell and (b) Brillouin zone of two dimensional graphene are shown as the dotted rhombus and the shaded hexagon, respectively, a, and b, (i= l,2)are unit vectors and reciprocal lattice vectors, respectively. Energy dispersion relations are obtained along the perimeter of the dotted

triangle connecting the high symmetry points, T, K and M fref 6] 21

2.4 CNT-IMJ with Circumferential Defect 24

2.5 CNT-IMJ with Distributed Defect 24

2.6 CNT-IMJ with Grouped Defect 24

2.7 Fullerene with 60 Carbon atoms 25

2.8 Corannulene molecule 26

2.9 Pyraclene..., 26

2.10 (a) CioO configurations corresponding to [5, 6] (b) CioO [6, 6]. Oxygen atoms are shown in red and grey are carbon atoms 27

2.11 Bromine doped fullerene CsoBrt 28

2.12 (a) Band structure of carbon nanotube of (5, 5) and (b) corresponding Transmission 31

Vll l

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3.1 Schematic illustration of the Raman experiment A monochromatic beam of light impinges on a sample and the spectrum of the scattered light is recorded 35

4.1 Perfect carbon nanotube (zigzag (4, 0)) 57

4.2 Perfect carbon nanotube (zigzag (9, 0)) 57

4.3 Perfect carbon nanotube (armchair (4,4)) 57

4.4 Perfect carbon nanotube (armchair (9, 9)) 57

4.5 One-dimensional wave-vectors K are shown in the BRILLOUIN zone of graphene as bold lines for (a) metallic and (b) semiconducting carbon nanotubes fref 2,166] 59

4.6 Energy versus Axial Wave Vector (a) (4, 0) (zigzag, semiconducting) and (b) (4, 4) (armchair, metallic) PCNTs respectively 61

4.7 Energy versus Axial Wave Vector (a) (9, 0) (zigzag, metallic) and (b)

(9, 9) (armchair, metallic) PCNTs respectively. 61

4.8 Calculated band gaps in PCNTs (armchair) of different diameters 62

4.9 Band gaps of PCNTs with increase in diameters 63

4.10 Density of State versus Energy (a) (4, 0) (zigzag, semiconducting) and (b)

(4, 4) (armchair, metallic) PCNTs respectively 67

4.11 Density of State versus Energy (a) (9, 0) (zigzag, metallic) and (b) (9, 9) (armchair, metallic) PCNTs respectively 67

4.12 MOSFET structure with channel made of CNT. 71

4.13 (a) Band structure of carbon nanotube of (5, 5) and (b) Transmission 73

4.14 Transmission of different armchair carbon nanotubes 74

4.15 (a) Band structure of carbon nanotube of (5, 0) and (b) Transmission 75

4.16 Transmission of different zigzag carbon nanotubes 75

4.17 Semiconductor-Semiconductor Circumferential CNT-IMJ (5, 3) - (5, 3) 78

4.18 Semiconductor-Semiconductor Circumferential CNT-IMJ (5, 4) - (5, 4) 78

IX

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4.19 Metallic-Metallic Circumferential CNT-IMJ (6, 3) - (6, 3) 78

4.20 Semiconductor-Metallic Circumferential CNT-IMJ (6, 4) - (6, 3) 79

4.21 Semiconductor-Semiconductor Circumferential CNT-IMJ (6, 4) - (6, 4) 79

4.22 Semiconductor-Metallic Circumferential CNT-IMJ (7, 3) - (7, 4) 79

4.23 Metallic-Metallic Circumferential CNT-IMJ (7, 4) - (7, 4) 79

4.24 Semiconductor-Semiconductor Circumferential CNT-IMJ (8, 4) - (8, 4) 79

4.25 MOSFETstructure (a) channel made of CNTstructure and (b) channel made

of CNT Intramolecular Junctions 80

4.26 Near Junction LDOS ofS-S Combination (a) PCNT (5, 4) and (b) CNT-IMJ (5, 4)-(5, 4) 81

4.27 Near Junction LDOS ofM-M Combination (a) (7, 4) PCNT and (b) CNT-IMJ (7, 4)-(7, 4) 83

4.28 Near Junction LDOS ofS-M Combination (a) PCNT (7, 3) (b) PCNT (7, 4)

and (c) CNT-IMJ (7,3) - (7, 4) 85

4.29 Transmission: PCNT (5, 4) and CNT-IMJ (5, 4) - (5, 4) 86

4.30 Transmission: PCNT (7, 4) and CNT-IMJ (7, 4) - (7, 4) 87

4.31 Transmission: PCNT (7, 3), PCNT (7, 4) and CNT-IMJ (7, 3) - (7, 4) 89

4.32 Metallic-Metallic Circumferential CNT-IMJ (6, 3)-(6, 3) 91

4.33 Metallic-Metallic Distributed CNT-IMJ (6, 3)-(6, 3) 91

4.34 Metallic-Metallic Grouped CNT-IMJ (6, 3)-(6, 3) 91

4.35 Transmission: Case-1, Case-2, Case-5 and Case-8 93

4.36 Transmission: Case-3 and Case-7 97

4.37 Transmission: Case-4 and Case-6 101

5.1 Cio-Purefullerene with 60 carbon atoms 104

5.2 Infrared spectra of (a) experimental data ofCiolref 108] cm' (b) calculation ofCiolref 109] cm' (c) present calculation ofC^ocm'' 109

X

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5.3 (a) C(,oO configurations corresponding to [5, 6j (b) C^oO [6, 6]. Oxygen atoms are shown in red and grey are carbon atoms Ill

5.4 Infrared spectra of (a) C(,oO experimental data fref. Ill] cm' (b) present calculation of C^O fS, 6J (c) present calculation of C^oO f6, 6J 116

5.5 Bromine doped fullerene C^oBrf, 120

5.6 Infrared spectrum of Cf,i)Brf, 123

6.1 Pure fullerene Chowith 60 carbon atoms 126

6.2 Raman Spectra of (a) CM experimental data fref 120] cm' (b present predictions 129

6.3 Raman spectrum of (a) C^O f5, 6j (b) C^oO f6, 6] 132

6.4 Raman spectrum of C^Br^ (a) experimental data fref. 153J cm' '(b) Calculated result fref 153J cm' (c) experimental data fref 154] cm' (d) present calculations 137

XI

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Glossary of Symbols

C = chiral vector of the unrolled honeycomb lattice of carbon nanotube.

0 = chiral angle with the zigzag direction of carbon nanotube.

ci, = nanotube diameter in terms of the integers n and m.

Ci, = length of the chiral vector.

fl/ and 02= are basis vectors in real space.

bi and Z>2= are reciprocal lattice basis vectors.

r = centre of the Brillouin zone of 2D graphene.

K = another corner of the Brillouin zone of 2D graphene.

M = centre of the Brillouin zone of 2D graphene.

T = translation vector of carbon nanotube.

ti and h= are the coefficients related to {n. m).

da = greatest common divisor of(2n+m, 2m+nJ.

N = number of hexagons enclosed within the ID unit cell of a nanotube.

flj = bond lengths of €50 at the fusion of a pentagonal edge with of a hexagon.

as = bond lengths of €50 at the fusion between two hexagons.

Ih = icosahedral point group.

Eg = energy gap.

AN = number of available states given energy interval.

AE = energy interval.

(Omoieciihr- is an internal frequency that corresponds to rotational, vibrational or electronic transitions within the sample molecule.

(Os = frequency of scattered light.

XM

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E= Eocosf(oitj= is a time dependent electric field.

P = is a dipole moment in the crystal.

a = polarizability tensor.

aij = ij 'th component of polarizability tensor a.

a'l^ = tensor components for the normal mode k.

Ml = Rayleigh lines.

(Oi+ Oh - anti-Stokes lines.

coi-cok = Stokes lines.

7(q) 7(q)= kinetic energy operator for the nuclei.

Egi(R)= potential energy for the nuclei which is a function of the nuclear coordinates R.

Ei„i = total nuclear energy of the system.

|ytot^ = total wave function for the nuclei.

V = Laplace operator.

(c) R: =are Cartesian nuclear coordinates.

F^'' =Cartesian Hessian matrix.

F^'^' = diagonaiized Hessian with elements

d(p = radiation power in a conical beam

c/n = solid angle.

Vo = wave number of the incident radiation.

fio.ind(Vo) = ampli tude of the induced dipole moment .

a = polarizability of the molecule

(fo = ampli tude of the incident electromagnetic field.

Xl l l

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V™, == frequencies for rotational of the molecule.

Vyih = frequencies for vibrational of the molecule.

\\,iec = frequencies for electronic transit ions of the molecule .

d„q =-- e lectronic expectat ion value for a given set of nuclear coordinates .

{a„'qi fj) - matrix e lements depend only upon the vibrational quan tum numbers .

jx = electronic matrix e lements for Raman spectrum.

a = electronic matrix e lements for IR spectrum.

/ = linear parallel polarization of the incoming and scattered light the intensities.

/-L = perpendicular polarization of the incoming and scattered light the intensities.

p = depolarizat ion ratio.

7,,/ = irreducible spherical tensors.

/ = quan tum number used for transformed under rotation.

m = other quantum number used for transformed under rotation.

D'^' = matrix presentation in the form of the rotation matr ices .

7/5 = intensity matrix e lement .

|i»i) = initial state dur ing frequencies transit ion.

|iy) = jlnal state during frequencies transition.

Pw(Liyi)= density of photon states per frequency range following the Fermi's Golden Rule.

{Hfi) = transition dipole matrix element.

R '' = normal coordinates of the molecule.

V - frequency.

V = volume.

XIV

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V = potential energy.

p(v) = energy density per frequency range.

A = area.

l(v) = intensity per frequency interval.

Nf = number of molecules per unit volume in the fmal state.

N, = number of molecules per unit volume in the initial state.

dl = an element of absorbing material of length.

KfVfiJ = ab.sorption coefficient.

C = molar concentration of the absorption material.

Ay = integral absorption coefficient.

p = normal mode.

y = mean anisotropy.

0 = irradiance.

(c)

D^ = matrices in a basis of Cartesian distortion coordinates with symmetric operators S.

f ('") = lyiass weighted Hessian matrix.

M' = a diagonal matrix.

Xs,fi = character ofS in the irreducible representation.

(PnCr - Ri) = located on an atom at vector position R,.

Ki = wave vector of PCNTs along the circumferential.

K2 = wave vector PCNTs along the carbon nanotube axis.

^cwrC^)^ one-dimensional energy dispersion relation of a carbon nanotube.

V = discrete k values in the circumferential direction.

TT = conduction band of graphene.

XV

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7t* = Other valence band of graphene.

Eg = energy gap.

Eg-ioW^ energy dispersion relation.

E^(kx) = one-dimensional dispersion relations for the 4n states of the (n, 0) zigzag carbon nanotiibes.

T = transmission.

C" = advance Green"s functions of the carbon nanotube.

C = retarded Green's functions of the carbon nanotube.

Tj = function that describes the coupling of the carbon nanotube to the electrodes.

r2 = other function that describes the coupling of the carbon nanotube to the electrodes.

/ = identity matrix.

e — HQ = inatrix represents the finite isolated carbon nanotube.

e - W/, R =^ infinite electrodes.

hc/i = coupling matrices for adjacent points in the nanotube.

hiQ = coupling matrices for adjacent electrodes.

Xi' ' = self-energy terms due to the semi-infinite electrode.

X2'" ^ other self-energy terms due to the semi-infmite electrode.

9{L,R) — electrodes" Green's functions.

^"2 ^ ^ advanced Hermitian self-energy.

Xi,2 E = retarded Hermitian self-energy.

A, = eigenvalues.

Nvib = eigenvectors.

C - C = carbon bond length.

XVI

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C-C-C = angle among the carbon atoms.

C = carbon atom attached with the oxygen atom in CeoO.

C'-O-C = angle between the carbon atoms which are attached with oxygen atom in CeoO.

C- C'-C = angle between the carbon atom (attached with oxygen atom) and its nearest two carbon atoms in CdoO.

C" = carbon atom which attached with the bromine atom in CeoBre.

XVII

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Chapter - 1 : Introduction

1.1 Preamble

Nanotechnology deals with the manipulation of matter on atomic and molecular

scale. Generally, nanotechnology works with materials, devices and other structures

having at least one dimension size from 0.3 to 100 nanometres, it is an exciting and fast-

emerging discipline that also deals with modeling and computer simulation of systems

such as biomolecules, polymers, drugs, inorganic and organic molecules etc within nano

scales. Today, computational works have grown and became popular because of

tremendous improvements in computing power and software during the last several

decades. Complex physical, chemical and biological problems pertaining to nanoscale

may effectively be solved by using parallel or grid computing facilities with faster and

efficient numerical algorithms.

The present research effort is based on computational work on carbon nanotubes.

fullerene and fullerene derivatives. The structures used are the perfect carbon nanotubes

(PCNTs), carbon nanotubes with Intramolecular .lunctions (CNT-lM.ls). C6o. CboO and

C6oBr6have been found to possess novel properties and applications. The material

properties of the nanostructures for example, electronics, optical and others depend upon

the band structure [2]. The band structure of various carbon nanotubes and those with

Intramolecular Junction exhibit variety of intriguing properties and provide opportunities

for new and exciting nano devices. For example, it has been observed experimentally [78,

175, 176] and shown with calculations that the metallic and semiconducting nanotubes

joined through Intramolecular .lunctions behave as diodes, permitting electricity to flow in

only one direction. Theoretically, combinations of CNT-lMJs with different band gaps

may also function like light-emitting diodes and perhaps even nanoscopic lasers. It may

now be feasible to build a nano circuit that has wires, switches and memory elements

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made entirely from CNTs and other molecules. This type of engineering on a molecular

scale may eventually yield tiny versions of conventional devices exploiting quantum

effects.

The band structures of different types of CNTs like the armchair, the zigzag and

the chiral tubes have been obtained in addition to the calculations of Electron Density of

State (DOS) and Local Density of State (LDOS) along with the electronic transmission

through these nanotubes. The Tight-Binding Method [14, 15] has been applied for

calculations. Various combinations of PCNTs have been considered for studies of

Intramolecular Molecular Junctions (IMJs). Studies have been performed for three

different types of Intramolecular Junctions-the circumferential type of IMJ, distributed

type of IMJ and the grouped type of IMJ and numerical results have been obtained with

defects in semiconductor-semiconductor (S-S), metallic-metallic(M-M) and

semiconductor-metallic (S-M) combinations. A semiconductor-metallic junction is

equivalent to a Schottky diode.

Theoretical and computational studies have been carried out for investigation of

electronic properties of carbon nanotubes, fullerene and its derivatives. Accurate

determinations of electronic properties are essential for design and development of

applications using various structures. Recently, mechanical and electronic properties of

carbon nanotubes have been studied in detail and dependence of band gap on chirality has

been observed. Band gap variations with mechanical deformation are important in view

of its ability to use as nanoscale sensors. There has been growing interest in graphene

nanoribbons, PCNTs and CNT-IMJs patterned from graphene for use as field-effect

transistors (FETs) because of excitant band structures of these nanostructures. There is

possibility of converting hydrogen terminated zigzag-edge graphene nanoribbons or

CNTs into semi-conductor materials for spintronics applications. Further, spintronic

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transistors with magnetic contacts based upon spin-unpolarized armchair-edge and

zigzag-edge graphene nanoribbons or PCNTs have been proposed. The band structure of

armchair PCNTs show metallic behavior and wires for carrying electrical current may be

fabricated from metallic and metallic - polymer composites of carbon nanotubes. The

small wires of CNTs exhibit greater specific conductivity in comparison with those of

copper or aluminum wires and find applications in modern computers at high switching

speeds.

Spectroscopy is the study of interaction between matters with radiated energy

[190] and the concept is extended to interaction of configuration structure with transfer of

energy as a function of its wavelength or frequency [64-72]. Hartree-Fock Method is

employed for calcLilation of Infrared and Raman spectra in the present research study for

various nanostructures like fullerene (C50) and fullerene derivatives such as C60O and

CftiiBrft. Using information of infrared and Raman spectra of fullerenes (Ceo) and its

derivatives, one may increase solubility of fullerenes to allow preparation of new

compounds with biological and pharmacological activities. The physical and chemical

properties of these fullerenes allow many possible applications, especially, in biomedicine

and pharmacology.

Infrared spectroscopy has been highly successful in application oforganic

structures in industrial and research, measurements, quality control as well as for dynamic

analysis oforganic structures. With the availability of modern computers and numerical

techniques, it is now possible to predict Infrared as well as Raman spectra for

nanostructures with confidence. The experimental determination of these spectra for nano

materials is rather difficult and involves considerable cost. Hartree-Fock Method may be

employed for calculations of Infrared spectra to identify functional groups, structure

elucidation, nano particles, detection of impurities and quantitative analysis.

3

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Raman spectroscopy is one of the most sensitive tecliniques used for higliiy

symmetric covalent bonds with little or no natural dipole moment. Generally, fuUerene

and its derivative form covalent bonds in materials and Raman spectroscopy is able to

provide a wealth of information about these molecules. Raman spectrum may provide

information on both intramolecular and intramolecular vibrational modes of the structure

and is capable of distinguishing even slight changes in nanostructures. It is a valuable tool

in characterization of carbon nanomaterials, for examples allotropes of diamond, graphite,

fullerenes, graphene and carbon nanotubes etc. Every peak in a band of spectrum

corresponds to a specific vibrational frequency of bond within the molecule. Hartree-Fock

Method may be a suitable tool for computation of vibrational frequencies of the

molecular structure and can give orientation of bands, in nanostructures.

1.2 Objective of the Present Study

The main objective of the present study is the investigation of electronic and

vibrational properties of carbon nanostructures using computational techniques. The

arrangement of carbon atoms in two dimensional sheet structures is called graphene and

may be curved into cylindrical geometries to form carbon nanotubes and those in

quasisherical geometries as fullerenes. In the present work various types of perfect carbon

nanotubes (armchair, zigzag and chiral). different combinations of intramolecular

junctions, fullerene and some of its derivatives have been studied for their physical

structures and electronic properties. The Tight Binding Method (TBM) [15] is employed

to obtain physical structure of different types of carbon nanotubes (CNT) [1,2]. There is

a growing interest in using carbon nanotubes (CNTs) with varied intramolecular junction

(lM.ls) in between them. CNT-lMJs with Stone-Wales defect have been investigated are

studied and an iterative projection matching method [182] is employed for their

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constructions [37]. It is observed that the semiconducting-semiconducting, metallic-

metallic and semiconducting-metallic CNTs junctions may be constructed only with

proper choice of tube diameters and pentagon-heptagon pairs otherwise nanotubes do not

join to form CNT- IMJ [18].These CNT-IMJs [80. 90-92] find their applications in Field-

[•ffect Transislors(FETs) [82-86], Schottky diodes[88. 89] and sensors etc.

In the work under investigation the fullerene C6o and its derivative CaO and

C6oBr6 have been studied. Fullerene (Coo) and its derivatives such as CooO and CeoBrohave

found applications in several fields such as manufacturing of organic compounds, solar

cell and medicines etc. The structure of fullerene and its derivatives are determined by

using an iterative projection matching method [182] and set of indices (n. m) [37].

Calculations are performed for studies of electronic properties of carbon based

nano-materials. The Tight Binding Method [14, 15] is used for prediction of electronic

band structures [2], Local Density of States (LD0S)[18], Density of States (DOS) [29]

and transmission through various nanostructures [167] and for determinations of

electronic properties of nanoscale devices such MOSFETs [166]. The determination of

band structures. LDOS. DOS and transmission of CNTs and CNT-IMJs [177] serve as

complement to conventional experiments as these parameters cannot be known otherwise.

The computed band structure results pertaining to PCNTs are plotted as conduction and

valance bands at discrete points in k-space. Calculations are performed for determination

of band gaps of CNTs up to a diameter of 3.9355 nm and compared with previous

calculated work [164, 165].The TBM [14, 15] employed for electronic DOS of several

CNTs [2] show typical features of one-dimensional system which compare satisfactorily

with the previous works [2, 29, l66].The transmission [166] of zigzag and armchair

CNTs are calculated with increasing radii. The structure and electronic properties of three

different kinds of CNT- intramolecular junctions: the circumferential; the distributed and;

5

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the grouped IMJs are studied in detail. These defects are formed in pure carbon nanotubes

called the Stone-Wales defects, lying at the circumferential, in distributed fashion or at

grouped sites. The calculations of LDOS are performed for CNT-lMJs. The calculations

are also done for determination of transmission for the above three types of

Intramolecular Junctions formed between the two perfect nanotubes. These defects were

studied using semiconducting-semiconducting, metallic-metallic and semiconducting-

metallic CNT-lMJs.

Two spectroscopic methods, namely: the Raman; and the Infrared spectroscopic

techniques are employed in the present work for studies of structural and vibrational

properties of C50, C(,oBr6. CeoO [5, 6] and C60O [6, 6] molecules. CeoO molecule found to

exist in the form CboO [5. 6] and C60O [6. 6] isomers [112]. Before the calculations of

Raman and Infrared (IR) spectra, the equilibrium structural geometry ofCeo, C6oBr6. CeoO

[5, 6] and C60O [6, 6] are optimized. Predictions of these spectra are performed using the

Hartree-Fock Method [26. 56. 110]. The numerical results of IR and Raman for Ceoare

validated against the experimental IR [108] and Raman data [120]. The computed results

of Cf,o are found to compare well with the experimental results. The same calculation

scheme [56, 110] is used for investigation of Infrared vibrational frequencies of CeoO

[5, 6] and CeoO [6, 6] are compared with the experimental [111] and available numerical

results [112]. Infrared spectrum of C6oBr6is also calculated. Further, Raman spectra of

both forms of CaoO [5, 6] and CeoO [6, 6] have been presented. Experimental results of

C6oBr6 of Popov et al [153] and that of Birkett et al [154] are compared with the computed

spectrum of CeoBre with good results.

1.3 Previous and Related Work

Several theoretical studies have been undertaken in the past for investigation of

the electrical nature of carbon nanotubes [4-6] after its synthesis in 1991. The electronic

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structure of carbon nanotubes were obtained starting from that of two-dimensional (2D)

graphene [1,3], The fundamental parameters for carbon nanotubes and the basic relations

which govern these parameters were studied by Dresselhaus et al [2, 27].Three possible

kinds of carbon nanotubes, namely: the zigzag; the armchair; and the chiral type of

carbon nanotubes were found to exist [30, 31-32]. It was observed that the electronic

spectra of these nanotubes depend upon the tube indices (n. m) using a two-dimensional

relationship for a graphene sheet [1-3, 6]. The Tight Binding Method was found to give a

convenient tool for understanding the basic characteristics of electronic band structure in

single wall carbon nanotube [14, 15].These band structures provide information about the

electronic density of states (DOS) [30, 31]. Experimentally, DOS was also measured by

the Scanning-Tunneling Microscopy (STM) for both the metallic and semiconducting

PCNTs[163].

Carbon nanotubes (CNTs) are interesting in many respects, such as: they are

stable; they can be manipulated; they can be contacted to external leads; and they can be

both metallic as well as semiconducting depending on the diameter and helicity of their

atomic structure. Further, semiconducting nanotubes can be doped by application of

electric field [76] similar to the conventional MOS field-effect transistors. The possibility

of realizing seamless connections between single-walled nanotubes with different

helicities has stimulated great interest and is an important area of research in

nanotechnology [75, 78]. Rectifying current properties were predicted for these systems

[77], as in the case of a diode, and were further verified experimentally [78].

By a simple end-to-end connection between two different nanotubes, the

intramolecular junction (IMJ) is realized by the presence of an equal number of

pentagons and heptagons [79, 80]. Complex IMJ structures also exist and can be

theoretically formed, by incorporating pentagons and heptagons in the otherwise perfect

7

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honeycomb or the hexagonal arrangement of carbon atoms. It is believed that

intramolecular junctions (IMJs) can be produced, perhaps in a controlled way, by

electron irradiation of individual single-wall nanotubes [81]. A two-terminal device like a

metal/semiconductor Intramolecular Junction may be used in logical circuits in place of

all-transistor devices. On the theoretical side. Intramolecular Junctions are ideal systems

in the study of the electronic structure of metal/semiconductor [82-85], metal/meta!

[86],and semiconductor/ semiconductor [87] interfaces, and the investigation of Schottky

barrier formation in these junctions [87, 89], and for calculation of their transport

properties [80 , 87-92].

The calculation of quantum conductance calculation in carbon nanotubes was

dealt with using a variety of techniques retlecting different approaches of quantum

transport theory in ballistic systems. Tian and Datta [80] expected an Aharonov-Bohm

type effect in graphitic tubules in an axial magnetic field combining the Landauer formula

[2, 144] with the help of semi-classical treatment of transmission. Han et al. [168] also

calculated transmissions in various CNT-IMJs that were connected in bent shapes. Saito

et al. [145] studied the tunneling conductance by connecting carbon nanotubes through

the direct calculation of the current density. Similarly, Chico et al. [90] tackled the

problem of quantum conductance in carbon nanotubes with defects by combining

efficiently a surface Green's-function approach. Tamura and Tsukada [86] studied

variation of conductance with diameter of carbon nanotubes. They combined the

Landauer formula with explicit calculation of scattering matrix and an effective-mass

approximation to simplify the physical origin of the scaling law. Anantram et al. [167]

reported conductance of carbon nanotube wires in the presence of disorder with the help

of numerical method computing electronic transmission by using a Green's function

formalism.

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The discovery of buckminsterfullerene Ceo has grown into an important field in

nanotechnology [37, 187-188].Infrared spectrum of Ceo was measured by Karctschmer et

al [108] in 1990. Later, IR of Ceo was computed [107, 109]. Raman spectrum of Ceo was

determined experimentally [120] in 1992 and the calculations of Raman spectrum of Ceo

were performed in 2000 [113]. Fullerenes [42, 48] are stable molecules like graphite and

diamond having an extended solid-state structure and soluble in various organic solvents.

This permits for derivatization of fullerene via a variety of functional groups and

materialization of unique physical and chemical properties of fullerene derivatives so

produced [45-47, 144]. For example, some alkaline metal doped Ceo reveal

superconductivity even at temperatures higher than 30° K [114, 115] and unexpected

changes in magnetic susceptibility with temperature was also observed for numerous

alkali-metal fullerenes [116-119]. Monomer fullerenes can also be altered to dimers via

nucleophiles such as cyanide or hydroxide in the solid-state reaction [121] and

polymerized fullerenes with three-dimensional structures with hardness surpassing

diamond could be fabricated under high pressure and high temperature conditions [122-

124]. Besides the common exohedral fullerene derivatives where atoms or molecules are

connected to the ring outside the fullerene cage it has been shown that small atoms or

molecules such as hydrogen could be introduced into the fullerene cage [125].

It is obvious that the experimental methods to study fullerenes and its derivatives

along with its structures and properties are difficult, time taking and are expensive.

Theoretical studies should therefore be employed to clarify the experimental results.

Recently, CeoO is one of the fullerene derivatives which have invoked interest in research

circles. It is simplest fullerene oxide(C6oO) which serves as a starting material for more

complex fullerene oxides [126, 127] and is an important ingredient in the synthesis of a

range of chemical compounds [128-135].C6oO also enhances antioxidant activity [136]

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and has much shorter lifetime in its triplet state compared to fuilerene [137]. it was

suggested that the oxygen atom could also be encapsulated inside the fuilerene cage if it

acquires enough energy to overcome both the bond formation of exohedral CeoO [138]

and the potential barrier of CfioO. Creegan et al. first reported the synthesis of CeoO in

1992 1139] and the structure of C6oO with its stability were verified in many experiments

[137,140-143]. Theoretical studies [144-150]indicated that oxygen can bridge either to

the carbon atoms adjacent to two six-member rings ([6, 6] epoxide form) or one five- plus

one si.x-member ring ([5, 6] open form).It was found from C NMR and IR

measurements [151] that CooO should have epoxide Cv symmetry with an oxygen atom

connecting two six-member rings. Later experimental study using fuilerene ozonide by

Weisman et al. [152] confirmed that both the epoxide [6, 6] and open (annulene like) [5,

6] isomeric forms can be prepared depending on how it is synthesized. Cardini el at [111]

experimentally obtained IR spectrum of C6()0 in 1994 and in 2009 Sohn et al [112] made

calculations of two isomers of C6oO [5, 6] and CfioO [6, 6]. It was predicted that IR of

C„()0 [6, 6] was more comparable to experimental CaoO [111] at 10° K than that of C6oO

[5, 6] isomer.

There are a number of Ab-initio and Semi-Empirical studies which suggested that

the [5,6] isomer is slightly more stable than the [6,6] isomer [155-158].The reorganization

between the two isomers involves two transition states and an intermediate state

corresponding to local minimum [156, 158].It should be noted that the methodologies

utilized for these studies could not account for the precise electron correlation or basis set

effect on the equilibrium geometries and relative stability between these two isomers of

C6oO. The molecular dynamics [159, 160] as well as atomic force calculations [161]

predicted the epoxide [6, 6] form as more stable species than the open [5, 6] structure.

There is disagreement between a range of theoretical investigations and experimental

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findings for CeoO [5, 6] and CaoO [6, 6]. It, therefore, appears necessary to examine such

a molecule by employing more sophisticated methods to clarify the resuhs.

There are a number of studies carried out for fulierene [169-174] and its

derivatives with regards to the structure and energies. Bromination of fulierene [153] is

preferred on chlorination as the reaction remains less exothermic. In 1994, during the

bromination of fulierene various forms were found. namelyiCeoBre; C oBrg; and

CeoBri which were thermally stable [51].In C6oBr6 six isolated Br atoms are attached to

Ceo shell through a pentagonal ring on the €50 shell [5].Experimental studies reported

Raman frequencies of CeoBre [153, 154] and theoretical calculations for Raman spectrum

have been performed in [153].

1.4 Molecular Modeling Methods

Molecular Modeling Methods are the tools that required a computer to describe or

evaluate a number of properties of molecular structure. These methods use molecular

structures numerically and suggest their behavior using equations of quantum and

classical physics. Scientists and researchers employing these tools generate and present

molecular data consisting of geometries (bond-lengths, bond-angles, torsion angles etc.),

energies (heat of formation, activation energy, etc.), electronic properties (moments,

charges, ionization potential, electron affinity and band structures), spectroscopic

properties (vibrational modes, chemical shifts, Raman spectra. Infrared spectra) and bulk

properties such as volumes, surface areas, diffusion, viscosity, etc. The computational

results are normally compared with the available experimental data or numerical work

done earlier for validations.

The molecular modeling at the atomic scale may be roughly divided into three

classes: the First Principles Method or Ab-initio methods are the most rigorous ones. In

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these methods few well controlled approximations to exact quantum mechanics are made.

The second methods, the Semi-Empirical Methods, are based on approximations and may

also contain empirically defmed parameters. The third methods are the Empirical

Methods in which a group of methods are tuned to reproduce an empirically defmed

fitting set. All the three classes have its advantages and disadvantages. The above three

classes are brietly described below.

1.4.1 First Principles Method - Hartree-Fock Method (HF)

The most common type of Ab-initio calculation scheme is the Hartree-Fock (HF)

calculation technique in which the primary approximation is the central field

approximation [11]. In HF Method, the Coulombic electron - electron repulsion is taken

into account by integrating the repulsion term [26], This also gives the average effect of

repulsion, without the repulsion interaction. This is a variational calculation technique in

which the approximate energies calculated are all equal to or greater than the exact energy

[56]. The energies are calculated in units called Hartree (I Hartree = 27.2116 eV). The

energies from Hartree-Fock calculations are always greater than the exact energy because

of the central tleld approximation and tend to a limiting value called the Hartree-Fock

limit as the basis set is improved [1 l].In the present work the governing equations using

Hartree-Fock Method for calculations of the Raman spectrum and Infrared spectrum are

given in Chapter-3 and the results for different nanostructures are available in Chapter-5

and Chapter-6 respectively.

1.4.2 Density Functional Theory

The Density Functional Theory (DFT) for calculation of nanostructure electronics

has become popular in recent years. It is based on the practical observation and is less

computationally intensive than Hartree-Fock method of similar accuracy. DFT theory was

proposed by Hoenburg and Kohn [12, 13, 53]. The underlying principle is that the energy

12

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of a molecule can be determined with the help of electron density instead of a wave

function. The original DFT theorem was applied to fmd the ground-state electronic

energy of a molecule [12. 13]. A practical application of the DFT theory was developed

by Kohn and Sham who formulated a method similar to HF for a given structure [52-53].

In this formulation, the electron density is expressed as a linear combination of basis

functions similar in mathematical form to HF orbitals [54-55]. A detenninant is formed

from the basis functions and is called for Kohn-Sham orbitals [52-55]. The energy of the

system is computed from the electrons density determinant of orbitals. The above

procedure is used for Fermion systems which can only have electron densities that arise

from an antisymmetric wave function [53]. Kohn-Sham orbitals explain the behavior of

electrons in a molecule. The DFT using electron density of same problem does faster

calculations than Hartree-Fock Method.

1.4.3 Semi-Empirical Methods - Tight Binding Method (IBM)

Semi-Empirical methods utilize a range of approximations and may include

experimentally fitted parameters. A large number of Semi-Empirical Methods are

available for example: the Tight Binding Method (TBM);Austin Model 1 (AMl);Modified

Neglect of Diatomic Overlap (MNDO) and; Parameterization Method3 (PM3) etc [56,

60].The Semi-Empirical methods use less CPU time for calculations of nanostructures in

comparison with the First Principles Methods.

The Tight Binding Method is based on the "collection of atoms" viewpoint and is

one of the most appropriate method when electrons move through the crystal slowly (or

not at all, as in insulators) and, therefore, 'belong' to an atom for an appreciable time

before they move on [14]. The electrons are considered to be tightly bound to the atom

and can jump absorbing energy in the molecule or crystal. The Tight Binding Method

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may not be readily applicable to simple (free or nearly free electron) metals [14-15] but it

is quite useful for a wide variety of other solids, especially, the covalent carbon allotropes

[15]. For further details see Chapter- 4.

1.4.4 Empirical Method - Molecular Mechanics Method (MMM)

Empirical approaches are used with Molecular Mechanics Method (MMM) for

large systems. The fundamental assumption of the MMM is that positions of the atoms in

a molecule, ion or structure, are determined by: forces between pairs of atoms (bonds, van

der Waals interactions, hydrogen bonding and electrostatic interactions etc.); groups of

three atoms (valence angles) and; the groups of four atoms (torsional angles, planes).

In the Molecular Mechanics Method (MMM) energy expression consists of a

simple algebraic equation for the energy of a compound [19, 23]. This method does not

use a wave function or total electron density. The constants of MMM equation are taken

either from spectroscopic data or ab-initio calculations. A set of MMM equations with

their associated constants is called a force field. The primary postulates of the Molecular

Mechanics Method are the transferability of parameters [19, 23, 24] and requires simple

calculations which can be applied to very large molecular systems.

1.5 Present Contribution

In the present work various simulation techniques are used for prediction of

nanostructures and calculations of properties of carbon nanotubes and other molecules.

The band gaps of different types of perfect carbon nanotubes (PCNTs) are calculated in

the range of 0.3 nm to 3.9355 nm diameters using the Tight Binding Method and

compared with the previously calculated results, it is found that the band gaps of

semiconducting PCNTs and chiral PCNTs decrease inversely with increase in diameter

and become constant at higher diameter values. The electron transmission has been

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calculated in a number of PCNTs of varying chirality. it is a known fact that the armchair

PCNTs and some of the zigzag PCNTs are metallic in nature and have transmission value

of 2 units (number of channels) at Fermi level. The results of present calculations again

establish the fact that with the increase in diameter, both of metallic and semiconducting

PCNTs, the electron energy at Fermi level decreases. For example, in an armchair (3, 3)

CNT the first semiconducting band opens at 2.3 leV of electron energy while for the

bigger armchair PCNT (6, 6) the energy value is 1.33 eV.

The structure of carbon nanotube with Intramolecular Junction (CNT-IMJ) is

much more complex than simple carbon nanotube and exhibit significant variation in the

electronic band structure and other properties. In the present work three different kinds of

CNT- IMJ structures, namely: the circumferential; the distributed; and the grouped IMJs

are studied in some detail. The Local Density of States (LDOS)for circumferential type of

IM.Is is calculated and compared with the component PCNTs. The transmission and the

band gaps of the above mentioned three types of defects are studied for various

combinations of CNTs such as metallic-metallic (M-M), semiconductor-semiconductor

(S-S) and semiconductor-metallic (S-M). The metallic CNTs connected to

semiconducting ones through intramolecular junction behave as the Schottky junction

diode.

Three different structural configurations of fullerene have been studied which are

the fullerene C o; oxygen doped fullerene CeoO; and bromine doped ful!ereneC6oBr6 for

obtaining their vibrational spectra. CeoO is found to exist in two isomers -the C6oO [5, 6]

and CeoO [6, 6].The infrared spectroscopy and the Raman spectroscopic studies are

carried out for prediction of vibrational spectra of the above mentioned nanostructures

using Hartree-Fock Method at room temperature. The present calculations of Infrared and

Raman spectra for C6owere compared with the available computational and experimental

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results with good results. It is found that computed Infrared resuhs of CeoO [5, 6] shows

greater similarity with the available experimental spectrum of CeoO as compared to its

isomerCaoO [6. 6] at room temperature. Further, predictions of CaoBre Infrared spectrum

and the Raman spectra of both CaoOisomers have been carried out. The calculations have

also been done to predict Raman spectrum of CeoBraand the results are compared with

reported computational and the experimental data.

1.6 Layout of the Thesis

The present thesis entitled "Predictive Studies of Structure and other Properties of

Carbon Nanotubes and other Clusters using Various Simulation Techniques" consists of 7

chapters and the present chapter forms Chapter-!, Introduction. It describes background

of carbon nanotubes, fullerene and fullerene derivatives. Section 1.2 gives the objectives

of the present work. The previous works done related to the present study is described in

Section 1.3.The methods used for calculations such as the First Principles Method, the

Density Functional theory and the Semi-Empirical techniques are given in Section 1.4.

The main contribution of the present study is provided in Section 1.5.

Chapter-2 deals with the structure and properties of carbon nanotubes, fullerene

and its derivatives. The physical structure of carbon nanotubes and other nanostructures

used for calculations of electronic properties and spectroscopy are explained. Section 2.3

gives brief description of electronic properties of perfect carbon nanotubes (PCNTs)

which include the energy gap. Electron Density of States (DOS), Local Density of States

(LDOS) and the Electron Transmission.

The numerical methods pertaining to the Raman and Infrared spectroscopy are

explained in Chapter-3. The Raman and Infrared calculation techniques based on the

classical as well as the quantum mechanical methodologies are described.

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Chapter-4 contains results of predictions of band structures and electronic

transport properties of perfect carbon nanotubes (PCNTs) and carbon nanotubes (CNTs)

with Intramolecular Junction (CNT-lMJs). The band structures and the band gaps of

various PCNTs are described in Section 4.2.2. Section 4.2.3 describes the calculation

results of DOS pertaining to various types of PCNTs. Three types of CNT -

intramolecular Junctions: the circumferential; the distributed; and the grouped IMJs are

considered and electron transmission is calculated through CNT-IMJ with these defects.

Electron transmission is calculated in combinations of CNTs e.g. the Metallic-Metallic

(M-M), Semiconductor-Semiconductor (S-S) and Semiconductor-Metallic (S-M) for the

three types of defects mentioned above.

Chapter-5 gives the Infrared spectra of Ceo. C6oO [5. 6] and CeoO [6. 6]as well as

CeoBn,. Section 5.2.1 provides validation of predicted results of Caowith the

experimentally observed Infrared spectrum and also compared with the calculation results

of others. Section 5.2.2 presents results of Infrared spectra of CeoO [5, 6] and CeoO [6. 6]

and comparison with the experimental data and available numerical results. The

prediction of CeoBrelnfrared spectrum is given in Section 5.2.3.

The calculations of Raman spectra of Ceo, CeoO and CeoBre have been presented

and discussed in Chapter-6. The calculated Raman spectra of Ceo and CeoBre are

compared and validated against the experimental data and predicted results. Numerical

calculations of Raman spectra of CeoO are available in Sections 6.2.2.

Chapter-7 provides the concluding remarks. Finally, the proposals are provided

for future studies in Section 7.3. References are provided at the end of the thesis.

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Chapter - 2; Physical Structure and Properties of Carbon Nanotubes, Fullerene and its Derivatives

2.1 Introduction

Carbon nanotubes (CNTs) are high aspect ratio hollow cylinders with diameters

ranging between 0.3 nm to 100 nm and approximately few centimeters in lengths. These

nanotubes are made up of entirely of carbon and represent one of many structures that

carbon adopts in the solid state. Other forms of solid carbon are diamond, graphite and

buckyballs. These and many different forms of carbon exist because of its ability to form

hybridized orbitals and achieve relatively stable structures with different bonding

configurations. Carbon nanotubes exist because of sp hybridization similar to the

structure of graphite. In this Chapter, the atomic and electronic structures of carbon

nanotubes, fullerene and its derivatives are provided.

2.2 Physical Structure

Carbon nanotubes are long, thin cylinders of carbon discovered in 1991 by S.

lijima [1]. These are large macromolecules that are unique in their size, shape as well as

significant physical properties. These can be considered as sheet of graphene (a

hexagonal lattice of carbon) rolled into a cylinder [1]. These structures have sparked

excitement and interests in research during recent years because of their interesting

properties. Presently, the physical properties are still being discovered and disputed.

Carbon nanotubes have a broad range of electronic, thermal and structural properties that

depend upon by its diameter, length and chirality or twist. Besides having a single

cylindrical wall, nanotubes can have multiple walls-cylinders inside the other cylinders.

2.2.1 Perfect Carbon Nanotube (PCNT)

A perfect carbon nanotube (PCNT) can be thought, as a single layer of graphite

crystal that is rolled up into a faultless cylinder. The rolling is done with carbon atoms

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along the circumference or along the length of the cylinder axis. The graphene l^er of

carbon nanotube m ^ be given by the chiral vectorC/, denoted by (n, m) as:

Ch= naj+ma2

The interested reader may refer to [1-6, 27] for detailed description of the geometry and

other parameters of PCNTs. For the sake of completeness a brief account is provided

below.

Figure 2. J The unrolled honeycomb lattice of a nanotube. When the lattice sites O and A, and sites B andB' are connected, a nanotube can be constructed OA and OB define the chiral vector Cf^ and the translational vector T of the nanotube, respectively. The rectangle OAB'B defines the unit cell for the nanotube. The figure is constructed for a = (4, 2) nanotube [ref. 6].

The pair of indices (n, m) denote uwitvectorswaiand /wa in tiie hexagonal

honeycomb lattice contained in the vectorC/,. The chiral vector C/, makes an angle 6

called the chiral angle with the zigzag or aj direction as shown in Figure 2.1. Each pair of

integers (n, m) shows a possible structure of the nanotube and can be used for

categorization of structure. The two possible symmetry structures for nanotubes are

known as the zigzag (n, 0) and the armchair (n, n) shown in Figure 2.2(a) and Figure

2.2(b). The names are derived from the pattern formed when a particular tube is cut

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perpendicular to the axis. All other combinations of n and m are known as chiral

nanotubes; see Figure 2.2(c) [27].

The vector C^ joins two crystallographicallyequivalent positions O and A on a

two-dimensional (2D) graphene sheet where a carbon atom is situated at each vertex of

the honeycomb composition [3]. The general nanotube axis corresponds to 0°< 6 < 30°

whereas the axis of the zigzag nanotube corresponds to 0=0"and the armchair nanotube

axis corresponds to 6=30°. The faultless cylinder of the carbon nanotube is prepared by

joining the line AB' to the parallel line OB of the graphene sheet as shown in Figure 2.1.

The nanotube diameter d, in terms of the integers n and m is given by:

Here ac.cis the nearest-neighbour C-C distance (1.421 A in graphite), CH is the length of

the chiral vector C and the chiral angle 6 is given by:

6 = tan'[3^'^ m/(m+2n)]

(a) (b) (c)

Figure 2.2 (a) The zigzag structure (n, 0), (b) the armchair structure (n, n) and (c) the chiral structure (n, m); n^m.

Thus a nanotube can be defined by either its (n, m) indices or equivalently by d, and 6. A

brief description of physical structure of the CNT is provided below. For details the

interested reader may refer to [1-6, 27].

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Figure 2.3 (a) The unit cell and (b) Brillouin zone of two dimensional graphene are shown as the dotted rhombus and the shaded hexagon, respectively, aiand bi (i= 1,2) are unit vectors and reciprocal lattice vectors, respectively. Energy dispersion relations are obtained along the perimeter of the dotted triangle connecting the high symmetry

points, r, K andM [ref 6J.

The unit cell and the Brillouin zone of two-dimensional graphene are shown as a

dotted rhombus and a shaded hexagon in Figure2.3 (a) and Figure 2.3 (b) respectively.

Here a/ and 02 are basis vectors in real space and Z>/ and b: are reciprocal lattice basis

vectors. In the x, y coordinates shown in Figure2.3, the real space basis vectors aj and a^

of the hexagonal lattice are expressed as:

ai = {0"'/2a,(a/2)) , az = ((3'"/2) a, (-a/2))

where a =|ai|= lozl = 1.42 x 3"^ = 2.46 A is the lattice constant of two-dimensional

graphene. Correspondingly, the basis vectors bi and 62 of the reciprocal lattice with lattice

constant of 4 n / 3"' a in reciprocal space are given by:

bi = {(27i/2^'^ a), (2 n/a)), bi={(2nlf'^ a), (- 2 n/a))

The direction of the basis vectors bj and b2 of the reciprocal hexagonal lattice are

obtained by rotating 3(P from the basis vectors a/ and a: of the hexagonal lattice in real

space, as shown in Figure 2.3(a). The first Brillouin zone is shown as the shaded hexagon

in Figure 2.3 (b). The highest symmetry for the Brillouin zone of 2D graphene is defined

by the three high symmetry points r, K and M as the centre, the comer and the centre of

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the edge respectively. The energy dispersion relations are calculated for the triangle TMK

shown by the dotted lines in Figure 2.3 (b).

In the unit cell for the ID nanotube, OB is defined as the shortest repeat distance

along the nanotube axis in Figure 2./.The translation vector of carbon nanotube 7 given

as:

T =tiai +1202

where the coefficients // and / are related to («, m) by:

ti = (2m +n)/dR ,t2 = (- 2n +m)/dR

where d^ is the greatest common divisor of (2n+m, 2m+n) and is given by:

dii will be d if (n-m) is not a multiple of 3d or 3d, if (n-m) is a multiple of 3d. In such

cases d is the greatest common divisor of f«, m). The magnitude of the translation vector

ris:

171 =3^'^L/dR

where L is the length of the chiral vector CA= ndi and d, is the nanotube diameter. The

unit cell of the nanotube is defined as the area described by the vectors T and C . The

number of hexagons N enclosed within the ID unit cell of a nanotube is decided by the

integers («, m) and is given by:

N = 2 (m^+mn+n^J/dii

2.2.2 Carbon Nanotube with Intramolecular Junction (CNT-IMJ)

The Intramolecular junctions (CNT-IMJ) are in one tube or between nanotubes

formed due to Stone-Wales defect in the PCNTs. A Stone-Wales defect is a

crystallographic defect that occurs on carbon nanotubes and graphene etc. In 1986 Stone

and Wales applied the bond switch transformation scheme to generate Stone-Wales

22

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defects in the structures [180]. The Stone-Wales transformation is the 90° rotation of two

carbon atoms with respect to the midpoint of the bond and during the single

transformation two hexagons are changed into one pentagon and one heptagon.

It is believed that intramolecular junctions can be produced, perhaps, in a

controlled way by electron irradiation of individual PCNTs [81]. Theoretically,

Intramolecular junctions are ideal systems to consider for the study of the electronic

structure of metal/semiconductor [82-85], metal/metal [86] and semiconductor/

semiconductor [87] combinations. Investigations are in progress for Schottky barrier

formation in such junctions [88, 89] and for calculations of their transport properties [80,

90-92]. An electronic CNT-IMJ is a simple two terminal device and formed through a

metal/semiconductor Intramolecular junction (metal/semiconductor CNT-IMJ or Schottky

diode) and offers interest for logical circuits.

2.2.3 Types of Intramolecular Junctions in CNTs

The indices (n, m) are used for the geometrical construction of carbon nanotubes

with intramolecular Junctions (IMJs) which correspond to specific combinations of (i and

6 [37] and the structure of the junction is obtained by using an iterative projection

matching method [182]. The tubes are connected with each other by Stone-Wales defect

lying at the circumferential, distributed or at grouped sites. The three Intramolecular

junctions: the circumferential CNT-IMJ, grouped CNT-IMJ and distributed type of CNT-

IMJ are shown in Figures 2.4-2.6. In the circumferential CNT-IMJ pairs of pentagon -

heptagon are formed on the circumference of the joints of the two carbon nanotubes as

shown in Figure 2.4.\x\ the distributed defect these pairs of pentagon and heptagon exist

at different sites on the carbon nanotube as depicted in Figure 2.5. On the other hand in

the grouped defect the pentagons- heptagons grouping are formed as a cluster on one side

within the junction area as shown in Figure2.6.

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Figure 2,4 CNT-IMJ with Circumferential Defect

Figure 2.5 CNT-IMJ with Distributed Defect.

Figure 2.6 CNT-IMJ with Grouped Defect.

2.2.4 Fullerene Buckyball

A fullerene is one kind of the molecules composed entirely of carbon in the form

of a hollow sphere, ellipsoid or tube. Spherical fullerenes are known as buckyballs and

look like football [37]. The cylindrical fullerenes are called carbon nanotubes or

buckytubes. Fullerenes are similar to graphene structure composed of graphene sheets of

linked hexagonal rings but may also contain pentagonal or heptagonal rings [185].

Richard Smalley et al at Rice University discovered fullerene and the

buckminsterfullerene (Ceo) was prepared in 1985.Five years later Sumio lijima identified

the structure from an electron microscope image where it formed the core of a "bucky

onion" [186]. Fullerenes have also been found to occur in nature as well and in outer

space [188, 189]. The detection of fullerenes spread research for a large number of carbon

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allotropes which were earlier limited to graphite, diamond and amorphous carbon such as

soot and charcoal. Buckyballs and buckytubes have recently been the subject of intense

research both for their unique chemistry and for their technological applications,

especially, in materials science, electronics and nanotechnology. BuckminsterfuUerene is

the smallest fullerene molecule in which no two pentagons share an edge. The structure of

Ceo is a truncated (T = 3) icosahedron, which resembles a football of the type made of

twenty hexagons and twelve pentagons with a carbon atom at the vertices of each polygon

and a bond along each pol>'gon edge. The Van der Waals diameter of a Ceo molecule is

about 1.1 nanometers (nm) [37,189]. The nucleus to nucleus diameter of a Ceo molecule

is about 0.71 nm.

Figure 2.7 Fullerene with 60 Carbon atoms.

Figure 2.7 displays a Ceo molecule connected trigonally to three other carbon

atoms with sp^-derived bond.Ceois like a regular truncated icosahedron and has 90 edges

of equal length, 60 equivalent vertices, 20 hexagonal faces and 12additional pentagonal

faces to form a closed shell. Two single C-C bonds are situated along a pentagonal edge

at the fusion of a hexagon and a pentagon which is defined asa^. In Ceo the bond lengths

for the single bonds a$ are 1.46 A as measured by NMR [33 - 36] and 1.455 A by neutron

scattering [38], The bond lengths of Ceo at ±e fusion between two hexagons, denoted by

<af«are measured to be equal to 1.40 A by NMR and 1.391 A by neutron diffraction. Since

Ae bond lengths in Ceo are not exactly equal (i.e., 05 - «6 ~0.06 A), the vertices of aCeo

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molecule fonn a truncated icosahedron and strictly speaking, not a regular truncated

icosahedron. In many cases the difiference between the 05 and a^ bonds are neglected and

Ceo is often called regular truncated icosahedrons. Experimentally, diameter of Ceo was

observed 7.10 ± 0.07 A [36] and calculated as 7.09 A [10].

Figure 2.7 illustrates that every pentagon of Ceo is surrounded by five hexagons.

The pentagon and its neighboring hexagons of Ceo form the corannulene molecule sho\\Ti

in Figure 2.8. Here each carbon atom of corannulene molecule is shown by green colour.

Figure 2.8 Corannulene molecule.

Another molecular subunit of Ceo molecule is the pyraclene (also called pyracylene)

which consists of two pentagons and two hexagons as depicted in Figure 2.9.

Figure 2.9 Pyradene.

The Ceo symmetry consists of an identity operation, 6 five-fold axes through the

centers of the 12 pentagonal faces, 10 threefold axes through the centers of 20 hexagonal

faces as well as 15 two-fold axes through centers of 30 edges joining two hexagons. Each

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of the 60 rotational symmetry operations can be mixed with the inversion operation that

results inl20 symmetry operations in tlie icosahedral point group h [37,49].

2.2.5 Oxygen Doped FuUerene (CeoO) and its Isomer

The structure of CeoO consists of Ceowith an oxygen atom. It has sixty carbon

nuclei residing on a sphere with an oxygen atom connected with two carbon atoms. CeoO

has two isomers CeoO [5, 6] and CeoO [6, 6] as shown in Figure 2.10 (a) and Figure 2.10

(b ) respectively. Figure 2.10 (a) displays the isomer [5, 6] with an oxygen atom bonded

(a) (b)

Figure 2.10 (a) CtgO configurations corresponding to [5, 6] (b) diP [6, 6J. Oxygen atoms are shown in red and grey are carbon atoms.

to two C atoms and out of the two bonds of oxygen atom one bond is shared with one

pentagon carbon atom and the other bond shared with one hexagon carbon atom of

Ceocage. This type of CeoO configuration is isomer CgoO [5, 6]. CsoO [6, 6] isomer is

shown in Figure 2.10 (b) and in this case two bonds of oxygen atom are shared with the

two hexagons of the carbon cage.

2.2.6 Bromine Doped FuUerene (CwBre)

The configuration CeoBre consists of Ceoand six Br atoms as shown in Figure

2.11. As described in Section 2.2.4the structure of Cgohas 12 pentagonal and 20

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hexagonal faces and in CeoBre six Br atoms are attached to six carbon atoms on the

fullerene shell through a single radial covalent bond. These six isolated Br atoms are

attached to one of the carbon atoms on a pentagonal ring on the C6o shell with one Br per

p>Tacylene miit shown in Figure 2.11. The C-Br bond length is 2.07A and one electron is

shared between the carbon atom and the Br atom [61,193].

Figure 2.11 Bromine doped fullerene CioBri

2J Electronic Properties of PCNTs

PCNTs have proved to be a promising class of electronic materials because of

their nanoscale dimension and outstanding properties, for example, of ballistic electronic

conduction etc. [143-144, 167-168]. Bodi metallic and semiconducting PCNTs possess

electrical characteristics which are favorable in nano-electronics [175-176] and nano-

mechanical applications. Although the interest and efforts of the scientific community in

the research of carbon nanotubes is considerable, some of the basic properties pertaining

to optical, electronic, magnetic and magneto-optical etc. are still not well understood.

2.3.1 Energy Gap

When a system has a large number of atoms (PCNT or CNT with Intramolecular

junction, crystalline material etc.) the higher energy levels tend to merge into two

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separate bands of allowed energies called the valence band and the conduction band. The

energy levels which are mostly filled are called valence band while those which remain

nearly empty are called conduction band. Electrons that occupy the energy levels in the

conduction band are called free electrons. The closely spaced energy levels in the valence

and conduction bands are often separated by an energy range where there are no allowed

quantum states or energy levels and are known as the energy gap Eg (or band gap). This

energy gap between the two allowed energy bands is also often referred to as the

forbidden band or forbidden gap. Numerical methods and results of calculations for band

gaps for PCNTs have been presented in Section 4.2.2.

2.3.2 Electron Density of States (DOS) and Local Density of States (LDOS)

Density of states (DOS) is the total number of energy levels per unit volume

which are available for possible occupation by electrons. In a specified small area where

the total number of electrons occupies energy levels per unit volume is called Local

density of states (LDOS). The density of states (DOS) AN/AE represents the number of

available states AN for a given energy interval AE {AE —»• 0). The DOS and LDOS is a

quantity that can also be measured experimentally under some approximation in the given

sample. Carbon nanotubes are one dimensional systems and the DOS calculated in one

dimensional system can be applied to carbon nanotubes [5, 11, 25].

The DOS or LDOS is known to depend significantly on dimensionality.

Calculations for determination of DOS, LDOS for the PCNTs and the CNT-lMJs using

the Tight Binding Method has been carried out in Section 4.2.3 and Section 4.3.3.3. The

densities of states with local density of states diverge as the inverse of the square root of

the energy {\HE) close to band extrema. The "spikes" in the DOS and LDOS profiles are

called Van Hove singularities (VHs).

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2.3.3 Electron Transmission

Research is progressing in the field of quantum conductance [143]in

nanostructures. Nanostructrures, especially, the carbon nanotubes become a natural

choice for experimental and theoretical investigations of electrical conduction on a

mesoscopic scale. The electronic bands and electron transmission properties of the CNTs

have been studied both experimentally [139-140] and theoretically [145, 167].

Theoretically, it is simpler to study the quantum electronic properties of PCNT or CNT-

IMJ than by performing experiments. The relation between conduction and transmission

with the help of Landauer formula [144] made it easier to understand the electronic

transport in extended systems and has been found to be useful in interpreting experiments

involving the conductance of nanostructures.

The band structures of PCNT or CNT-IMJ display various subbands that arise

from quantization of the wave vector around the circumference of the nanotube. The

subbands of a particular PCNT or CNT-IMJ contains a number of channels through

which electrons pass without scattering and these channels are called perfect

transmission. In other words, the total transmission at a given electron energy is equal to

the electron transmission probability times the number of channels.

The transmission versus energy is an important feature of the electronic band

structure of metallic carbon nanotubes. The band structure of carbon nanotube (5, 5)

armchair with energy versus wave vector is given in Figure 2.12 (a) which shows various

sub-bands of the band structure due to quantization of the wave vector around the

circumference of a carbon nanotube. Figure 2.12 (b) displays electron energy distribution

versus transmission in the corresponding PCNT (5, 5). The total transmission is equal to

the probability times the number of channels and the transmission probability in the case

of PCNT may be taken equal to 1 assuming no scattering. The distribution of total

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transmission exhibits steps when a sub-band opens or closes as shown in Figure 2.12(b).

The figure also displays the magnitude of change in transmission. These steps also

represent die sub-band degeneracy of the band structure. For example, the last green

colour lines in Figure 2.12 (a) crossing at £ = 0 is not degenerate sub-bands and each

contributes one channel for transmission. Thus the total transmission at the Fermi energy

»

0»*

i ^

W"'

^ i V

u

*•:

e l"-'i"

1

1 !•/ W

1

1

••I, * * -4 ' " * • • ' * '

1.,,

zr~

• " • * • • - J . ' • -

kt/ktinax Transraiscion

Figure 2.12 (a) Band structure of carbon nanotube of (5, 5) and (b) corresponding Transmission.

(E = 0) is equal to two. At about 1.75 eV, the transmission jumps from two to six imits as

the sub-bands have a degeneracy of two demonstrated with green colour lines (except the

last two green lines which cross at E = 0 having no degeneracy). The conductance and

valence bands have mirror symmetry so the Fermi energy is at the energy where the sub-

bands denoted by the green lines cross (E = 0) independent of nanotube diameter shown

in Figure 2.12 fa/These sub-bands are called crossing sub-bands. The location of wave

vector k where the crossing of lines occur changes with nanotube chirality.

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Chapter - 3: Spectroscopic Studies of Nanostructures

3.1 Introduction

Spectroscopy is the study of the interaction between matters with radiated energy

[190], Earlier, spectroscopy originated through investigation of visible light dispersed

according to its wavelength, e.g., by a prism [64]. Later, the concept was expanded to

extend any interaction of configuration structure with transfer of energy as a function of

its wavelength or frequency [64-72].Generally, spectroscopic data is represented by a

spectrum, a plot of the response of interest as a function of wavelength or frequency.

In the present work studies are carried out for different structural configurations

and the numerical calculations are carried out for two main spectroscopic techniques,

namely: the Raman spectroscopy and the Infrared spectroscopy. The results of calculation

are compared with the available experimental data and/or earlier calculated results in

certain cases. Although Raman and Infrared spectra of carbon molecules in the form of

diamond, and graphite and various other carbon derivatives have been studied over a long

time, spectroscopic studies of structures at nanometer scale, especially, of fullerene and

its derivatives [65-68] are scarcely available. Experimental as well as theoretical

spectroscopic work at the nano scale has greatly improved ones knowledge with regard to

these nanostructures [64-73, 93-106]. In the present chapter, Chapter-3, methodology for

determining Raman, and Infrared spectra of fullerene and its derivatives are presented.

This Chapter provides computational modeling and numerical simulation methods which

may be used for investigation for fullerenes and other structures like carbon nanotubes

etc. to obtain their characteristics, in particular, the properties applied to geometry,

bonding, transport, Raman and Infrared spectra etc.

The present chapter contains four main Sections. Section 3.1 is the Introduction

and Section 3.2 describes the classical statistical and quantum mechanical simulation

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techniques for the calculation of Raman spectra the results of which have been presented

in Chapter-6 for a number of structural configurations. Using Hartree-Fock calculation

technique, studies are carried out for determination of Raman spectra for fullerene Cm,

bromine doped fullerene C6oBr6 and oxygen doped fullerene CeoO (two isomers CeoO

[5, 6] and CeoO [6, 6]). The results of calculations are provided in Sections 6.2.1-6.2.3.

The third section, Section 3.3 describes the Infrared spectra through Hartree-Fock

methodology used in Chapter-5 for calculations of spectra for €50, C60O and CeoBra

structures. The calculated Infrared spectra results of various nanostructures have been

compared with the respective experimental data in Section 5.2.1- 5.2.3.The work

presented here may be of interest to researchers in a broad range of disciplines and the

interested reader may refer for further details to the literature available on the subject

[64-73,93-106].

Despite the availability of enormous experimental data with regard to the Infrared

and Raman effects for polyatomic molecules [64-73], the characteristics and other

relevant properties of these materials are yet to be understood. The theoretical tools for

such studies are well developed and can be applied to these structures for obtaining

deeper insight into the properties of interest. The theoretical studies should reduce the

cost and the labour of experimental investigations and can provide results much faster.

3.2 Raman Spectroscopy

Raman spectroscopy is based on the Raman effect, a light-scattering phenomenon.

When light of frequency ©1 irradiates a sample there will be scattering. If the frequency of

the scattered light remains the same to the original frequency then it is referred to as the

Rayleigh scattering and if the frequency of the scattered light gets shifted by cOs = coj ±

oJmoiecuiar then it is Called the Raman scattering. The frequency cOmoiecuiar is an internal

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frequency that conesponds to rotational, vibrational or electronic transitions within the

sample molecule [64 - 72].

Radiation scattering to the lower frequency side (red side of the spectrum) of the

excitation line is referred to Stokes scattering and on the other hand if the scattering takes

place at higher frequencies than that of the exciting line (blue side of the spectrum) is

called as the anti-Stokes scattering. Overall, the magnitude of shifting between the Stokes

or the anti-Stokes line and the exciting line is called the Raman shift, Acu = | coi-cos \

3.2.1 Classical Description of Raman Spectroscopy

Raman scattering is inelastic scattering of light. In other words it is scattering of

light in which the energy of scattered photon changes. The principle is demonstrated in

Figure 3.1 where a monochromatic beam of light impinges on the sample and the

spectrum of the scattered light is examined. A theoretical treatment of Raman scattering is

essential for understanding, interpretation and appreciation of experimental Raman

spectra of samples for determination of properties of materials. In this Section a general

classical theory of Raman scattering is presented without reference to the specific

properties of the sample. By using the general theory one can study as to what

information the Raman spectrum carries about the sample. To gain a detailed

understanding one requires a quantum mechanical approach which has been presented

later in the Section 3.2.2.

Classical description

A simple classical explanation of Raman effect is that when a monochromatic

light of frequency a>i impinges on a molecule [1] it experiences a time dependent electric

field E= E()Cos(a)it). This electric field induces a dipole moment P in the crystal and may

be expressed in linear order as:

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Incident light \ I /

\ Sample /

Scattered light

^ ^ ^

Energy Energy

Figure 3.1 Schematic illustration of the Raman experiment A monochromatic beam of light impinges on a sample and the spectrum of the scattered light is recorded.

P = a.E = a. Eocos(a)it) (3.1)

Where a is the polarizabiHty tensor. In general, the polarizability will be a function of

interatomic distances and changes with the vibrating molecule. In a large system,

molecular vibrations can be decomposed into normal modes of frequencies wi, 0)2, . . .

with corresponding normal coordinates as Qi, Q2, • • • and by denoting a j- the y'th

component of polarizability tensor a then the polarizability can be given as;

{dUiA I v / d^ai «M = («n)o + > • V 1 ^

4^W. ^ 41 dQkdQk' QkQk, + (3.2)

k ^ ' k.ki

In the above expression the sums are over all the normal coordinates and zero

indicates equilibrium position. The Q's are small quantities and may be considered up to

the first order in the expansion and is also known as the electrical harmonic

approximation. Let aj denote the tensor with components (daij/dQk)o following

expansion for ajj for the normal mode k may be obtained as:

ak=a„ + «)£&= ao + aj Qkocos (cok + (pk) (3.3)

This equation expresses time dependence of normal coordinates which acts like

harmonic oscillators. QO is the tensor with elements (ajy)o. Using eqn. (3.1) the induced

dipole moment becomes;

P(k)=aj:,fios (coiO + -a'kEoQkofcos {(coi +cok)t +(pk} + cos {(coi -o)k)t-(pk}] (-5-4)

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It is well known that an oscillating dipole with a given frequency emits

electromagnetic radiation of that frequency. It is therefore, clear from eqn. (3.4) that the

vibrating molecule will emit light with frequencies a/, coi + cok and cot- cu;t which are the

Rayleigh, anti-Stokes and Stokes lines respectively. The term Ql from eqn. (3.2) gives

overtone frequency Icok of radiation. The above classical explanation gives the origin of

Raman effect but still one does not fully understand details of the mechanism. For

example, the coupling mechanism between the light and the vibrations is completely

ignored in the classical approach. Further, in the present approach the radiation field

couples the electronic system. All these matters need to be considered in quantum

mechanical treatment of the Raman effects presented below.

3.2.2 Quantum mechanical treatment of Raman Spectroscopy

Raman as well as Infrared spectra are obtained due to the movement of nuclei

around their equilibrium positions in a molecule. Thus the theory of vibrational spectra

(Raman and Infrared spectra) is based upon the nuclear Schrodinger Equation given

below in its time-independent form within the Born-Oppenheimer approximation in

which electronic and nuclear degrees of freedom are decoupled.

L^t7('')V('') + 4,(«))|y^''0= E,ot\vn (3.5)

Here - — ^^''^ ^ '' is the kinetic energy operator for the nuclei, Egi(R) is the potential

energy for the nuclei which is a function of the nuclear coordinates R, E,„, is the total

nuclear energy of the system. It;'"') is the total wave function and V is the Laplace

operator.

The time independent Schrodinger equation for the stochastic explanation of

nuclei within the Born-Oppenheimer approximation calculates the frequencies for a few

number of atoms. Thus for larger number of atoms harmonic approximation replaces the

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potential Egi{R)by Egi(R) ^R^'^^F^'^R^'^v/hsTQ Rf^re Cartesian nuclear coordinates

and / ' is the Cartesian Hessian matrix. Then the nuclear Schrodinger equation in terms

of mass-weighted normal coordinates R^''-' within this approximation is given by:

L^y{ci)^^{q) + i?(q)^F(<?)R('?)J|ut°t) = Etot\v'°') (3.6)

Comparing eqn. (3.5) and eqn. (3.6) it can be seen that the second term on the left hand

side in the eqn. (3.6) is the harmonic approximation that replaces the potential for nuclei.

/' ''''is the diagonalized Hessian with elements:

' J eq

Raman Intensities

According to Placzek's classical theory of polarizability the Raman intensity is defined as

the ratio of the radiation power d0 in a conical beam of solid angle dCl [62]. Within

classical electrodynamics the intensity of an oscillating dipole is given by [43]:

l{e) = "''"' " ^-!- (3.8)

Here 6 is the angle between the directions of propagation of incident beam with the

observation, Vo is the wave number of the incident radiation, and/^„,>,/vJ is the amplitude

of the induced dipole moment which oscillates with the same frequency Vo= VoC as the

incident radiation. In general the intensity of the radiation source is large and therefore

the quantum effects on the radiation field are negligible [40]. Still required is the quantum

mechanical treatment for obtaining the molecule properties. This approach is known as a

"partial quantum mechanical treatment" of scattering phenomenon.

The time-independent amplitudes of the oscillating dipole moment are obtained as

given below in terms of matrix of the elements of the induced dipole moment [64]:

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«{v}'''\d\vl°% (3.9)

a is the polarizability of the molecule and^o is the amplitude of the incident

electromagnetic field. In the present work only the linear response of the molecule

radiation interaction has been taken and therefore the effects concerning first and higher

hyper-polarizabilities are not considered. Also, it is supposed that the electric field vector

(o is constant within the system.

The rotational contributions to the nuclear wave function |D^°') is included as below:

Iv^ot) = \v).x''°^.X^''''''' (3.10)

This gives total nuclear wave function where |u)is a product of (3n-6) [or (3N-5) for

linear molecules] vibrational single mode wave functions. Assuming:

\vn= \v;J,Mj) = \v).\j,Mj) (3.11)

with |u)defined in eq. (3.10). The above assumption is only valid if Vo >> v„,, vw* and

Vi, <'=• V(,/ec, where Vr,,,, v„b, v^i^c are the frequencies for rotational, vibrational and

electronic transitions respectively of the molecule and neglecting the coupling of matrix

elements between vibrational and rotational motion. One more requirement for this

treatment is that the electronic ground state of the system is non degenerate.

Taking a as a tensor with the matrix elements of the tensor components of the

configuration considered:

icCpq.fi) = {Vf\ijf,Mjj\dp^\jf,],,i)\Vi) (3.12)

andp, q = {x,y,z}

Here the integration over the electronic coordinates has been done in such a way that

apq is the electronic expectation value for a given set of nuclear coordinates. The

polarizability tensor components depend upon the selection of the space-fixed coordinate

system and are related to the respective molecule fixed axes/?', q'by.

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«pq = 2_, "p'q' cos(pp') cosiqq') (3.13) P'Q'

It is interesting to note that the polarizability components in the molecular

coordinate system do not change under molecular rotation in comparison with the space-

fixed system. Therefore, it is possible to have separate integration over vibrational and

rotational coordinates given by:

<«P<7./i) = 2_j^"p'q'.fi){jf'^jA'^°^ ixx')cos (yy')\ji,Mj^i) (3.14) p'q'

Here the matrix elements(ap'(j'y i) ^u^lap'^'li;,) depend only upon the

vibrational quantum numbers {Vi,Vf}.One is aware that ffp'q'is not known as a function

of R'''\ but estimation of the matrix elements (ap^y j) requires integration over nuclear

coordinates and a Taylor series expansion is necessary[ 16].Clearly, the calculation of the

matrix elements for the components of the polarizability tensor can be performed in a

similar way as for the components of the dipole moment. In equations (3.17) to (3.19)

given below one may make use of the properties of the Hermite polynomials (fi and a are

electronic matrix elements).The Taylor series expansion of electronic matrix elements

may be given as:

The total matrix elements including the nuclear wave functions neglecting the quadratic

and higher order terms in equations (3.15) may be evaluated as below:

(a,,) = a(o)KK)+^^^j(.,|<>|.,) (3.16)

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The matrix elements(u;|ui}and (u^ R '' Ui| may be obtained as: 3W-6 3W-6

p=i p= i

3N-6

{vf\Ri'^\v!] = (v.jy:^,). f ] {v,,fKi) (3.18) p=i,p*fc

{yKf\RP\vk..) = Uv,,y^X, ; i .,/ = v , , - l (3.19) I 0 ; otherwise

For fundamental transitions|ufe ,- + 1) <- |uk,i)the above equations may be summarized

as:

iafi) = K,{v,, + lyi' ( ^ (3.20)

2 _ h _ h _ h

''^~7M~ 4Tn^ ~ Srr cVk ^ " -*

It should be noted that |i;''"^)is the product of the individual harmonic oscillator

wave functions for all normal modes of the molecule through harmonic approximation in

the molecule. Also the Taylor series for jl and a are cut after the quadratic terms

(electrical harmonicity), the procedure presented here is called the double harmonic

approximation.

Equation (3.19) gives then on vanishing part for the scattering intensity that

occurs for all transitions with^u^ = 0,± 1. The case Svf^ = Ocorresponds to Rayleigh

scattering, which means the frequency of the incident radiation remains unchanged. For

Raman scattering, one has to confine to the Stokes case where Vkj - fj i + 1 and the

wave numberVo of the oscillating induced dipole is no longer Vj . The wave number of

the incident beam Vi jhas to be replaced by Vi„ - Vpwhere Vpis the wave number of the

vibrational transition for normal mode p.

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Raman Tensor Invariants

In the following sub-section expressions for tensor invariants for Raman scattering

are obtained. For a phonon with a diagonal Raman tensor with three elements ay^ aj + ai

and the scattering configuration in the laboratory frame being (ZZ), to find the Raman

intensity one would integrate and average over all possible orientations of the crystal.

Taking help of Euler's angles [57, 58]:

1 rn,2n,2n

zz = 7-7 |ei.;?.ej2di//d(psinudu (3.22)

J rn;niM fsin(p sinv\ lo.\ \ /sincp sinv\ 4z = TTT (( cosmsinv 02 cos(psinv ) d^d(p sin vdv (3.23)

^^ •'0 V cosv J\ aj\ cosv J

Integrating and rearranging one gets:

45 a + 4y;2

l 5 ~ Izz = 7 7 ^ ^ (3.24)

where

and

1

Ys' = \ [(ai - ^2)' + (a2 -a,y+ (a, - a,)'] (3.25)

The result in equations (3.24) is valid for all parallel polarizations of the incoming and

outgoing linearly polarized light as well as for every Raman tensor excluding that y ' . For

perpendicular linear polarization e.g. Ixz after integration one gets

hz - 37s^/45. It can be noted that the symmetry can also be partially obtained from the

experimental studies of unoriented systems. The intensity on unoriented materials can be

obtained from the transformation of a tensor under rotation. A second-rank tensor can be

split with respect to the rotation group into a scalar matrix, an antisymmetric matrix with

rank one and a symmetric traceless matrix with rank two. These components separate

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quantum numbers and contain transformation properties under rotation. Tlie matrix

elements for a fixed orientation are obtained using tlie Wigner-Eckart theorem and the

integration over all crystal orientations is carried out by the tensor invariants. Using the

approach of Neslor and spiror [59] one defines the Raman scattering isotropic invariant

« = 3 {«xx + ayy + oc^z) (3.26)

The antisymmetric anisotropy

3 Ys = llioixy - OCyxf + i^xz " ^ZA:)^ + («yz " ^zy) ] (3-27)

4

and the symmetric anisotropy

YI = 2 [(«xx - ayyf + K y - ^zz)^ + («zz " ^xx)^]

where aij(i,j = x.y.z) are the elements of the Raman matrix as given in Table 3.1 for

carbon nanotubes.

Table 3.1 Raman Tensors of the carbon structure

^m ' 2(J?) ^Ks) ^Hg) ^2y/; ^2[K)

(a 0 ()\ /O <' 0\ /'O 0 A /O 0 0\ /O / 0\ /- / 0 0" 0 a 0 \-a 0 0 0 0 0 10 0 -c / 0 0 0 / 0

>() 0 h \ o 0 0/ W 0 0/ \o -d 0/ ID (J 0/ l o 0 Oj

A linear combination of the tensor invariants can be expressed in the scattering

intensity on an unoriented sample in any scattering configuration. For linear parallel (j|)

with perpendicular (• ) polarization of the incoming and scattered light the intensities are

given by (apart from a constant factor):

/ = 455^ + 4 y | and /^ = 2Y'S^ + ^YIS (3-29)

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and is a general solution of Equation (3.23). The quotient L / / is defined as

depolarization ratio p. The Placzek's polarizability approximation gives that the

depolarization ratio of a totally symmetric vibrational mode is less than 0.75, and that of

the other modes is equal to 0.75. A Raman band whose depolarization ratio is less than

0.75 is known as P-depolarization band, and a band with depolarization ratio of 0.75 is

called a U-depolarization band.

Raman Intensity in Unorientaed Systems

The Raman intensities for any polarization on arbitrarily oriented systems can be

obtained using the matrix element for a particular Raman tensor of rank two and taking

the average over Euler's angles. The irreducible spherical tensors are used for

transformation of tensor under rotation group which can be taken as decomposition with

respect to rotational group. The irreducible spherical tensors Tl^'\\?i\e j and m quantum

numbers and can be transformed under rotation as:

7'i/' = X7'i/'^oS('^<0.0) (3.30)

Where D^^ is the matrix representation in the form of the rotation matrices. The rank k

tensor can be reduced into irreducible tensors of ranks 0, 1, 2, 3...k with the help of the

Clebsch-Gordan coefficients. A normalized Raman tensor R = 7^"^+ J^'^-'r T ^ may be

obtained by the following irreducible tensors:

'o u \."-xy "-yxj

T±i = +o[(azx + «xz) ±{«zy + «yz)]

'^S = 2 [("^^ ~ "^z) ± ( "zy - <^yz)]

'o ~~7f\.^^2z~ ^xx~ ^yy)

(3.31)

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In a fixed scattering configuration, the intensity matrix element hs is obtained

with the Wigner-Eei<art theorem. Using eqn. (3.3) and averaging over the randomly

oriented molecules the intensity ks would be:

7,5 «h.i?.e,P= J ^e,r(^) dv (3.32)

hs= j ^ lY.i/i^il^M^rnM dv (3.33)

where (JJ^ - miTrijI/ - M)are the Clebsch-Gordan coefficients with the selection rule

M = THj - m^.Using eqn. (3.30) one gets:

ks= j I QJs - mim,\J K - mi]) ( ^ TJJ^D. p(ms-mi) • dv (3.34)

The rotation matrices are orthonormal

i DJ/'^'D^''^ dv = n :5;i;/kifc2'^/iiM2 (3.35)

"'"^ V2ATT

The orthonormality of the rotation matrices gives:

ILS « Qds - mim,\J K -^i^y-^f^Yl^M^f ^ - ^ p

The sum over p does not depend upon the angular momentum quantum numbers m and

may be calculated for every /under consideration. As the mixed elements in the squared

sum do not necessarily cancel, therefore, care should be taken while adding over p by

using orthogonality of the rotation matrices in Eq. (3.35). Afterwards for calculation of

// is to be done for J=Q, 1,2 from (3.31).

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Depolarization Raman spectrum {p - l-^/h\)

The depolarization ratio is defined earlier as the intensity ratio between the

perpendicular component and the parallel component of the scattered light [191, 192].The

electric field of the incident light stimulates the scattered light. Hence the direcfion of the

vibration of the electric field or the polarization direction of the scattered light might be

assumed to be the same as that of the incident light. But in reality some part of the Raman

scattered light retains the polarization direction and other part is scattered in

perpendicular direction to that of the incident light called the perpendicular component.

The part component of the Raman scattered light whose polarization direction remains

parallel to that of the incident light is known as the parallel component. The ratio between

these two components is expressed as the depolarization ratio;

(P = I-/I||) (3.37)

The value of the depolarization ratio of a Raman band depends upon the symmetry of the

molecule and the normal vibrational mode. It is known that the depolarization ratio of a

totally symmetric vibrational mode is less than 0.75 and that of the other modes equals

0.75.

3.3 Infrared Spectroscopy

Experimentally, the main principles of operation of Infrared and Raman

microscopes are simply that the radiation illuminates a small area of the sample, and then

a microscope receives the transmitted, reflected or scattered light which is later analyzed

by a spectrometer. Incrementally, the sample then moves along a plane perpendicular to

the direction of illumination. The process is repeated for all sections of the sample till

complete vibrational spectra are obtained. The vibrational microscopy depends on the size

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of the sample under consideration, the area of illumination, the excitance and the

wavelength of incident radiation.

The Infrared vibrational spectra of different groups in a molecule are obtained due

to absoiptions at certain characteristic frequencies. It is because the normal mode of even

a very large molecule is often dominated by the motion of a small group of atoms. The

intensities of vibrational lines in Infrared spectrum give the motions of atoms or small

groups in particular molecule. Ultimately, the molecules in a sample are identified by

examining its Infrared spectrum and referring to a table of characteristic frequencies and

intensities.

The prediction of Infrared spectra is based on time independent Schrodinger

equations. Therefore, the equations from (3.5) to (3.7) are again used to calculate F^^^

representing system of 3N decoupled differential equations, one for each normal mode,

along an individual normal coordinate.

Transition Rates and Infrared Intensities

The Infrared spectra intensities using different models are calculated through the

time dependent perturbation in Hartree atomic units. Firstly, a specific transition is

required to determine the transition rate. For the first order time dependent perturbation

theory assuming a continuous range of frequencies that can make a transition between the

initial state |ii,)and the final state|i;^), the rate of transition as given in [39, 40]|uy ) <-

|ii(>shallbe:

Wf^, = ^{H^^)'p,{vfi) (3.38)

Where p^(u^,)is the density of photon states per frequency range following the Fermi's

Golden Rule. Neglecting the contributions from the magnetic dipole moments and higher

order terms in the dipole approximation [40] the perturbation is given by:

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{H}f)=-{vf\fi{R^<^^).^\vn

= -</^/i).(o (3.40)

Considering that average amplitude (o of the field vector with ^ is to be constant all over

the molecule. The transition dipole matrix element, {fifi) = {U^'"|/I(R^''))|U'°^) requires

integration over normal coordinates R *' of the molecule as it involves the translational

and rotational contribution in \v'-°'^). The total nuclear wave function which includes the

translation and rotational contribution is given by:

Where \v) is a product of the (3N-6) (or (3N-5) for linear molecules) vibration of single

mode wave functions. Neglecting rotational and translational contributions the expression

in eqn. (3.40) gives (//I- ) = (M/i)^-^o such that the electronic dipole moment has the

same direction. The molecules may randomly be oriented and therefore to model the

spectrum quantum mechanically, an addition over all allowed rotational states would be

necessary to include. Thus the classical mean value (/i"f ) = ,{Hfi)^/3 may be applied

here.

Classical Electromagnetic theory and Transition Rate

The classical electromagnetic field energy with frequencyvin volume V is given

by E™'' = IECIEIV, butone may introduce the energy density per frequency range:

£EMF P(y)=~-PN(V) (3.42)

Wp:l= S;;p(v;i)(/V-^/) With:

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as the Einstein coefficient for stimulated emission, % is equal to Bf,. N/ and N,

respectively denote the number of molecules per unit volume in the final state. In the case

of Infrared spectroscopy, the intensity per frequency interval I(v) emitted by a radiation

source at frequency v is defined as the energy AE that passes through an area A within the

time interval / i.e. I(v)dv = AE/{AAt). The total of the light source in the finite range of

frequencies is given by:

[ I^:=I{v)dv = Iiv)Av (3.44) 'range

Here the intensity per frequency range is assumed to be almost constant in the range Av of

the line width of the radiation source. If an element of the absorbing material of length is

dl with cross section ^=FM, every transition |i)y ) <- |iii)in this element will decrease the

energy of the radiation field by an amount of AE = hvfi, such that the number of

transition VK iff V in the element of volume Fper time interval At decreases. The decrease

in the intensity [41] is given by:

-dl^fi = hVfiWp:f dl = hVfiBfip{yfi){Ni - Nf)dl (3.45)

Rate of transition

According to the above eq. (3.45) p(v) = I(v)/c = \vl{cAv) leads to a homogeneous

differential equation with the solution [40]:

^ =/o,v^.exp[-K(v;i)Ci] (3.46)

where / is the total length of the sample chamber and the absorption coefficient K{yfi) is

given as:

48

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and C is the molar concentration of the absorption material. As the absorption lines

always have a finite width, for the integral absorption coefficient A^ such that Bf, is

constant in the frequency range gives:

•'line

) dv = K:(V)AV

The occupation number for the harmonic oscillator from the Boltzmann

distribution at the lowest level [171] in thermal equilibrium is given by the above

equation. The expectation value of the electronic dipole moment jlR'^^^ in the eqn. (3.48)

which enters through {iifi)'^a.nd depends on R^'^ is calculated through a Taylor series

expansion.

Since all fundamental transitions \vpf) <- |iip,i)for a given normal mode/? occur

at the same frequency v/, = Vpit is important to add over all the absorption coefficients for

these transitions. After this addition of transition, the integral absorption coefficient is

independent of temperature. Using Taylar's series expansion (given below) for the

absorption coefficient Ay is:

Taylor series expansion of electronic matrix elements

The Taylor series expansion of electronic matrix elements shall be:

After evaluation of the total matrix elements, including nuclear wave functions

[neglecting quadratic and higher order terms from eqn. (3.50) one gets:

49

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(,,,) = /I(o)(v,|.,) + ^ i - ^ \ Rl^'(vr\R'^y) (3.51)

Evaluation of matrix elements{u |uj) andiUy /? Vi -

3JV-6

wii^i)=n^^P'^i"P''^ p=i

3JV-6

p = i

3W-6

(.,|4^)|.,) = {v,,r\Rf\v,,). l \ K,\v,,)

ffc./l<^hfc.i) =

p=l,p*k

((Vk.i + ^y^%,: Vk,f = Vk.i + 1

(Vk.iy^%k '• ^k.f=-"k,i-'^ 0 ; otherwise

(3.52)

(3.53)

(3.54)

(3.55)

The equations for fundamental transitionsjufc; + 1) «- \vi(i) may be summarized as

(3.56)

<M/i> = iJk("k.i + 1) 1/2 f dji

^dR, (9) J (3.57)

It is noticed that |u^°^) is a product of the individual harmonic oscillator wave functions

for all normal modes of the molecule in harmonic approximation. The sample is arranged

in such a way that the incident beam is directed alongside the z-axis of the space fixed

Cartesian coordinate system and plane polarized in y direction. The observation of the

scattered radiation are detected as plane polarized along the y and z axes without any

other analyzer in x-axis {6 = n/2). The amplitude of the induced dipole moment (eqn. 3.9)

is given by:

<MJ,"')'= ((«yy./i) + <«zy,/i))fo (3.58)

50

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Using ^0^= fo,z = 0 and fo,y= Ko| the eqn. (3.8) becomes:

K72) = ""'' f"^"' m^^yy.fi)' + <<^^y,fi)') (3-59) Z£Q

Conversion of classical terms into Quantum Integration

In the classical method all cosine terms averages over the vibration state are converted

into the quantxim mechanical integration for the scattering volume containing N,

molecules and summation over all allowed rotational levels gives [43]:

The mean anisotropyy is introduced by:

Y^ = 2 [(<"^x/i) - i^yy.fi)? + (<«yy,/i) ~ ("zz.fi))^ + {{"zzji) " i«xx,fi)f]

+ IHi^xyji? + {(^yzjif {cCzx.ri)')] (3-61)

and the mean (isotropic) polarizability a may be given as:

a = 3 {{axx.fi) + ((^yy.fi) + i«zz.fi)) (3.62)

The classical polarizability tensor components are converted into the quantum mechanical

matrix elements and the irradiance is introduced as:

<t>=\eoC^^ (3.63)

Calculation of Derivatives

Central differencing is used to calculate gradients, dipole moments and

polarizability of all configurational structures. The calculations are carried out for 6N

different structure molecules through Bickley formula [44] of 3-point central differences

as every atomic Cartesian coordinate has to be distorted in positive and negative

directions. The molecular group symmetry is used to reduce computational work. Those

distorted structures must be calciilated where the displacements for a minimal set of

51

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symmetric non-redundant atoms and the data are obtained using symmetry

considerations.

Tiiose molecules exhibiting nontrivial point group symmetry, the symmetry

operations of such point group map the position of one nucleus Aj onto the position of

other nucleus A2. The symmetric operators S are represented by D^ matrices m a basis

of Cartesian distortion coordinates. By doing calculation for all Cartesian displacements

of atom Aj, the dipole moments, polarizability and gradients for the displacement of the

coordinates of atom ^2 are obtained as:

VEi2) = DI'^VE(1) (3.64)

The derivatives are obtained from the above transformations as:

V«(2)/iW(2) = Dfv^'KV)ii^'\2) (3.65)

and the corresponding part of the Hessian is

F^'\2) = D^'V(^^(l)fl^'^^ (3.66)

The Hessian of the considered configuration contains all contributions with

respect to rotation and translation. In principle, these modes should have a zero vibration

frequency due to the fact that electronic potential energy in which the nuclei move is not

affected by these motions. These motions show absolute values of frequencies which are

slightly greater than zero due to errors in the numerical differentiation procedure. The

percentage of translational and vibrational contribution to a normal mode are determined

first by comparing the resulting momentum and angular momentum of the normalized

mode with the corresponding values for a normalized translational and rotational mode.

For a pure vibration normal mode, the momentum and angular momentum ought to be

zero.

52

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Diagonalization of Cartesian Hessian matrix

Using the mass weighted Hessian F^"^^ matrix the energy eigenvalue is obtained

by diagonalizing the Cartesian Hessian matrix F '' given by:

piq) _ u(m)pim)ij{m)

p[q) ^ y(ni)t^-l/2f(c)^-l/2j;(m) (367)

Where M"' is a diagonal matrix with MJj^ = Sij/mi and the nuclear mass mjis the mass

of the atom corresponding to the Cartesian coordinate R^'. The standard projection

operators used to obtain a block diagonalized Hessian is given by.

Pi'=^t''^A'' (3-68) s=i

Where Xs.n^^ the character of 5 in the irreducible representation (irrespective) ofTfiOf

dimension nv(h is the order of the group). The matrices of eigenvectors are obtained by

diagonalizing the projection operator:

Sl^'^^pfsl^^ = ^i'^ (3.69)

and may be used in turn to get the Hessian irrespectively of F/jin the symmetry adapted

basis Sj^Fj^Sj^ = F^ . It is assumed that mass weighting of Cartesians coordinates

neither affects P ' -* nor 5 ''-'so that 5 ' -' = 5 "*-*. Thus each block f^^-'can be diagonalized

separately. The quantum mechanical treatment of the theory of Infrared spectrum

described above is used for obtaining Infrared spectrum of different structures in

Chapter-5.

53

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Chapter-4: Predictions of Band Structures and Electronic Transportation of Perfect Carbon Nanotubes and CNTs with Intramolecular Junction

4.1 Introduction

The electronic band structure (or simply band structure) of a solid is defined as

those ranges of energy an electron is "forbidden" or "allowed" to possess and is

equivalent to the energy required to free an outer shell electron from its orbit about the

nucleus to become mobile charge carrier and able to move freely within the solid material

[2, 4]. It gives a band gap or energy gap within the energy range in a solid where no

electron states can exist and is an important factor for determination of electrical

conductivity of materials. The band structure for a periodic specific crystal lattice may be

obtained from diffraction of quantum mechanical electron waves along the Bravais

lattice. Material properties such as electronic, optical and others depend upon band

structure [2]. In the present work numerical calculations have been presented for energy

gaps for various perfect carbon nanotubes (PCNTs) and electron density of states (DOS)

in Sub-Sections 4.2.2 and 4.2.3 respectively.

In the present chapter, electronic transport through PCNTs and CNTs with

Intramolecular Junctions (CNT-IMJs) has also been studied. Electronic transport can be

understood in terms of the conductivity of the medium. The conductivity tensor o may be

defined from the generalised Olim's law j = oE where j and E are the current, and static

uniform electric field respectively. In case of a carbon nanotube, during equilibrium in

absence of an electric field, the energy bands are equally occupied in the backward and

forward directions of each wave vector and no net charge is transported in either

direction. In the semi-classical theory (Tight Binding Method) the time evolution of the

wave vector for the Bloch electrons in a uniform electric field electron interchange of

states occur through each carbon nanotube [15]. Each of these carbon nanotubes exhibits

54

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y

its own electronic band and the band structure changes when electric or magnetic field is

applied. The band structure of these nanotubes describe whether it is conducting or semi­

conducting. This motivates the intensive study of the electronic band structure of

nanotubes since their shape and occupation are crucial for the electronic transport. In the

present chapter, the band structure and the band gaps of various PCNTs are studied.

Further, transmission through different PCNTs as well as CNTs with Intramolecular

Junction is also calculated. Electrons Density of State for these CNTs is calculated using

the Tight Binding Method. Finally, the energy gaps are calculated for each type of carbon

nanotubes in Section 4.2.3.Section 4.3 deals with the transmission through various

PCNTs and CNTs with Intramolecular Junction using the Tight Binding Method. In

Section 4.3.3 calculations are carried out for the transmission of CNTs with different

molecular junctions and compared with the transmission in PCNTs. The last Section 4.3.4

describes structure of the CNT Schottky diodes and calculations for the transmission

through them.

Tight Binding Method

Tight Binding Method (TBM) or LCAO (linear combination of atomic orbitals) is

the standard method for solving the periodic potential problems encountered in the

electronic motion in solids. This was originally proposed by Bloch. The method consists

of making a linear combination of atomic orbitals situated on various atoms of the crystal.

The coefficients being the values of the plane wave exp(ik.R) at various positions R

where atoms are located.

TBM gives solutions exhibiting all the correct symmetry properties of the energy

bands. It is easier to get solutions with TBM for energy bands at arbitrary points in the

Brillouin zone in comparison with other approximate methods. Initially an atomic orbital

55

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(Pn(r - Rj) is located on an atom at vector position Ri and with quantum numbers

symbolized by the subscript n. Then the Bloch sum is formulated over all the atomic

positions in the unit cells of the crystal J^iexp {ik.R)(Pn (r - Ri). Similarly, other

Bloch sums are set up corresponding to each atomic orbital of an atom which corresponds

to each atom in the unit cell of the crystal. The non-vanishing matrix components of the

Hamiltonian lies between the Bloch sums of the same k value corresponding either to

different atomic orbitals on the same atom or to atomic orbitals on different atoms in the

unit cell. Diagonalizing the matrix of Bloch sum yields the energy band structure

solution. Non-diagonal matrix components vanish at special symmetry points of the

Brillouin zone by taking special values of k. These vanishing components of matrix lead

to special properties of energy bands at these symmetry points.

4.2 Band Structure - Perfect Carbon Nanotubes (PCNTs)

Section 4.2.2 deals with the electronic band structures of one-dimensional carbon

nanotubes and the effect of change in diameter of carbon nanotubes on the band structure

and explains the behavior of PCNTs in respect of being metallic or semiconductor

depending upon the chirality. In case of graphene, a zero gap semi-conductor, the valence

and conduction bands meet at the comers called the K-points of the hexagonal Brillouin

zone. The graphene sheet can be taken as infinite two dimensional plane without

additional constrains while the PCNTs made up of rolling of graphene sheet may be

considered to be infinite in one direction and finite around its circumference producing its

confinement effects and additional periodic boundary conditions. Section 4.2 consists of

three Sub-Sections. Eighty-three (83) perfect carbon nanotubes are considered for

calculations of band gaps as explained in Section 4.2.2. In Section 4.2.3 electron DOS is

calculated and presented.

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4.2.1 Types of Nanotubes Studied

The construction of perfect carbon nanotube has been explained in Section 2.2.

Using the Tight Binding Method [14, 15] eighty-three carbon nanotubes are constructed

[1-3] and out of these four tubes are shown in Figure 4.1- Figure 4.4, two are zigzag and

the other two have armchair structures.

Figure 4.1 Perfect carbon nanotube (zigzag (4, 0)).

Figure 4.2 Perfect carbon nanotube (zigzag (9, 0)).

Figure 4.3 Perfect carbon nanotube (armchair (4, 4)).

Figure 4.4 Perfect carbon nanotube (armchair (9, 9)).

4.2.2 Calculations of Energy Gap

The commonly used method for determining the electronic structure of single wall

carbon nanotubes is the Tight Binding (TBM) Method [15]. This is a standard procedure

in solid-state physics and works well for the case of weak overlap of atomic wave

57

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functions in an insulating crystal. The IBM approximation gives a convenient method for

understanding the basic characteristics of band structure in single wall carbon nanotube

[14, 15]. The electronic structure of a carbon nanotube (CNT) can be acquired from that

of graphene. The wave vector related with the chiral vector C j in the circumferential

direction gets quantized. On the other hand wave-vector associated with the direction of

the translation vector T along the CNT axis remains continuous for an infinite carbon

nanotube. These are the boundary conditions of the nanotube. This gives the energy bands

in the form of one-dimensional dispersion relationship which are the cross sections of the

energy bands in the case of graphene. For the reciprocal lattice vectors K2 of PCNTs

along the carbon nanotube axis C11.K2 = 0, T.K2 = 2n and K^ in the circumferential

direction, (C^. /f 1 = ZTT , T. Ki = O) the expressions are given as:

Ki = li-t2h + t,b2) (4.1)

K2=^{mbi-nb2) (4.2)

The one-dimensional energy dispersion relation of a carbon nanotube can be written as

E^r(k)^Eg_2D[k-ll^^ + vKi^ (4.3)

where -n/T <k < n/T is a one-dimensional wave-vector along the carbon nanotube

axis and V = 1,2,3 N. The periodic boundary conditions for carbon nanotube

provide N discrete k values in the circumferential direction. These N pairs of energy

dispersion curves correspond to the cross sections of the two-dimensional energy

dispersion surface of graphene which is given by eqn. (4.3). Several lines cut near one of

the K points as shown in Figure 4.5. The separations between two adjacent lines with the

length of the cutting lines are given by \K]\ = ^/dcm and (/If l = 2n/T respectively.

The carbon nanotube gets a zero energy gap if the cutting line passes through a K point of

58

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the two-dimensional Brillouin zone [2, 166] as shown in Figure4.5(a), where the it and

ff* energy bands of graphene are degenerate by symmetry. If the /f-point is situated

between two cutting lines such that K is always located in a position one-third of the

distance between two adjacent K-i lines then a semiconducting carbon nanotube with a

finite energy gap is formed as shown in Figure4.5 (b). Further, for a given indices of

carbon nanotube (n, m) if n-m is exactly divisible by 3 then the carbon nanotube is

metallic where as carbon nanotubes with residuals 1 and 2 for the division n-m by 3 are

semiconducting as pictorially depicted in Figure 4.5 (a) and Figure 4.5 (b) respectively.

Calculations for band gaps of different kind of carbon nanotubes are given below that

explain the metallic or semiconductor nature of the carbon nanotube.

(a) Metallic (b) Semiconductor

k

Figure 4.5 One-dimensional wave-vectors K are shown in the BRILLOUIN zone of graphene as bold lines for (a) metallic and (b) semiconducting carbon nanotubes [ref 2,166],

Band Gap of armchair and zigzag PCNTs

When the system has a large number of atoms in case of PCNT or CNT with

Intramolecular Junction as also in crystalline material, the higher energy levels tend to

merge into two sepm ate bands of allowed energies called the valence band mid tihe

conduction band as shown in Figure 4.6 and Figure 4.7. The energy levels which are

mostly filled are called valence band while those which remain nearly empty are called

conduction band. Electrons that occupy the energy levels in the conduction band are

called free elections. The closely spaced energy levels in the valence and conduction

59

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bands are often separated by an energy range where there are no allowed quantum states

or energy levels known as the energy gap Eg (or band gap).

Fermi energy level at EF = Odivides the conduction band and valence band. It is

useful to build an approximate relation that describes the dispersion relations in the

regions around the Fermi energy Ef = 0 as electrical conduction is decided by states

around the Fermi energy. The expression around the point (0, ±An/3a.) where the energy

gap is zero and/ = 0 is given by /(k) ~ - t ( l + 2e^''^"/^ cos{ky a/l)). It is easy to

show that/(k) «(tV3 at/2)(fc;, + i/9y), with ^y = ky + (An/Sa). The

corresponding energy dispersion relation can be written as [28]

Eg-2D{k) = ± | / (k) |

V3at r~ 7 Eg.2D(k) = ±-^^k^,+P^ (4.4)

In general (n, n) armchair carbon nanotubes yield 4n energy subbands by means of

2n conduction and 2n valence bands. Out of these 2n bands, two are non-degenerate and

n-1 are doubly degenerate [2]. The degeneracy comes from the two subbands with the

same energy dispersion but with different v - values. In general all the zigzag carbon

nanotubes have the lowest conduction and the highest valence bands and are doubly

degenerate whereas all armchair carbon nanotubes have band degeneracy between the

highest valence and the lowest conduction band. For both of the armchair as well as

zigzag carbon nanotubes bands are symmetric with respect to k = 0 [2 - 4]. It is a known

fact [2] and present calculations also show that an armchair carbon nanotubes bands have

two valleys at around k = ±2n/3a points as shown, for example, in Figure 4.7(b) while

the zigzag carbon nanotubes can have at the most one valley as shown in Figure 4.7(a).

The bands in each armchair cross the Fermi level at k = ±27r/3a thus they are considered

to exhibit metallic behaviour [2]. There is no energy gap of the order of ~ 0.011 eV for

60

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armchairs as shown in Figure 4.6(b), Figure 4.7(b) and Figure 4.8 irrespective of the

tube diameter. Some zigzag tubes also show zero band gaps as shown in

Figure4.7(a).This is because zigzag tubes become metallic when the tubes are (2n + m)/3

is an integer otherwise the tube remains semiconducting.

kt/ktuiiix kt(%tinai:

Figure 4.6 Energy versus Axial Wave Vector (a) (4, 0) (zigzag, semiconducting) and (b) (4, 4) (armchair, metallic) PCNTs respectively.

(a) (b)

kt/ktmax

Figure 4.7 Energy versus Axial Wave Vector (a) (9, 0) (zigzag, metallic) and (b) (9, 9) (armchair, metallic) PCNTs respectively.

61

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0.016:

0.015:

0.01 +

0.011

^0.012J

"^o.oir

I o.or

0.0091

0.0081

0.007:

0.006i

-&- •e- -B- -B- -B- -e- -H

' I TJ dA

T — i — r 1— r~ rT -—I—I—r

Diameter (nm) ' ' ' i;2

Figure 4.8 Calculated band gaps in PCNTs (armchair) of different diameters.

83 PCNTs are chosen between the diameter range of 0.3 nm - 3.9355 nm. These

PCNTs include armchair, chiral and zigzag types leaving out those zigzag tubes which are

metallic in nature. 16 of these 83PCNTs aremetallic (armchair) and 67 are semiconductor

(chiral and zigzag).The band gaps of chiral and zigzag tubes between 0.3nm to3.9355nm

diameters (67 in numbers)is displayed in Figure 4.9 and in Table 4.1.In Tables

4./nanotubes are listed with increasing chiral angle 6° in order of increase in indices (n,

m). The tube diameter and the calculated value of band gap are also given. The results in

Tables 4.1 clearly show that irrespective of the chiral angle, with the increase in diameter,

the band gap decreases. Further, it may be seen that for the tube of about the same

diameter with different chirality shall have about the same band gap. Therefore, it is clear

62

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thai: the band gap of the semiconducting tubes depend inversely upon the diameter. The

armchair (n, n) tubes band g ^ of the order of 0.01 leV remains independent of diameter

as shown in Figure4.9 and Figure 4.8. Figure 4.9 also give die band gaps by Mintmire

et al [162]. Similar results have also been reported by White et al [164,165] for the band

gaps of carbon nanotubes.

3l

2.5-

a.

d

0.5-

_ _ _ angle = 0 degree angle = 1.87 degree

- — — angle = 5.2 degree an^e = 5.81 degree an^e = 7.58 degree angle = 8.94 degree angle = 19.1 degree an^e = 23.41 degree calcalated data ret 162

I'"I r 'ri-rT'r "i" V»3

1 1.5 2 2.5 3 3.5 Diameto* of CNT (nm)

Figure 4.9 Band gaps ofPCNTs with increase in diameters.

63

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p o

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p ON U)

jo

b to O N -J

p bo

b

p U)

U)

Ul

to 4^ 00 u> U)

ON

p Ul ON 4^ Ul Ul

4 Ul U)

?

0

Ul

U) U) -J

a"

b

S

a" 1,

3

"a"

k b M(.

&

a 1.

1 3

"a"

k b S"

"a" 1

3

II

II j«i

be

05 II

Ul Qo

k^

N

Oj

^

ts)

UJ

K.

to

i**

I • •1

a

a

I

f

i 1 s-

I §

ON 4^

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t

1

1

1

1

1

00

o

0\

1

1

1

-J

U)

ir\

o

1

1

1

to

ON

o k) ON

1

1

"to

to bo vo

o to

o

to

o to

ON

to ON NO to -J

o

to

-J

p to

to

JO —/

to to

00 Lfl

P

to

to

00 00 00

p Ul

4^

VO VO

p l/i 00 to

o

o

p In o

p

b

p bo

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ON

O

to

po

p bo to 00

b o VO

o

00 to Ul

io Ul

'2 k)

o

b 00

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p

to

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ON Ul

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4.2.3 Electron Density of States (DOS)

Density of states (DOS) is the total number of energy levels per unit volume

available for possible occupation by electrons. Local density of states (LDOS) is defined

as the specific small area where the total number of electrons occupy energy levels per

unit volume.

DOS for zigzag PCNT

The energy bands for (n, 0) zigzag carbon nanotubes may be obtained by

enforcing the periodic boundary conditions. This prescribes the allowed wave-vectors ky

in the circumferential direction as nkya = 2v7t, (v = 1... 2n). The one-dimensional

dispersion relations for the 4n states of(n, 0) zigzag carbon nanotubes may be written as:

E'fe) = ± ^ |k| + (S-')] («' 47r /3v

3a

- Tr/VSa <kx < TT/VSO

The energy gap for subband v can be written as difference between the energies of the +

and - branches at kx= 0:

^," = V 3 « ' ^ ( v - | ) ( " '

The energy gap has a minimum value of zero corresponding to v = 2n/3. If n is not

a multiple of three then the minimum value of v - 2n/3is equal to 1/3. This gives the

minimum energy gap as:

V3at27r 2ac-ct O.SeVnm E„ = = w

3 na dcNT dcNT

where dcNj- — na/n is the diameter of the carbon nanotubes. The DOS for

semiconducting zigzag carbon nanotubes based on (4.6) and (4.7) may be written as:

66

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(a) (b)

u

O

V - ' ' ' ' 4 ' ' ' ' 4

Energy (eV) 10 -fO

J Vj UJ \}J

V \)

- 1 1 L I - ' ' ' ' i ' ' ' ' 4 Energy (eV)

Figure 4. JO Density of State versus Energy (a) (4, 0) (zigzag, semiconducting) and (b) (4, 4) (armchair, metallic) PCNTs respectively.

(a) (b)

I IJ

V

\}

- i ' ' ' ' 4 ' ' ' ' 4 Energy (eV)

s

^

^ u

u u vj ^ 14

^ -•5 • • • • 6 • ' ' ^ T

Energy (eV)

F/gMre -/J/ Density of State versus Energy (a) (9, 0) (zigzag, metallic) and (b) (9, 9) (armchair, metallic) PCNTs respectively.

67

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which is valid only if (£" - Ep) « t [29].

The DOS for the metallic carbon nanotubes (armchair) may also be obtained but it

is independent of their diameters as well as chirality because of the linear dispersion

relations around the Fermi energy [2]. The density of states (DOS) [2] per unit length

along the metallic carbon nanotube axis is constant given by 8/37tac-ct.

It is observed that the DOS of PCNTs shows some typical features in one

dimensional system. The DOS of semiconducting zigzag depends on the structure and

diameter as shown in Figure 4.10 (a) and Figure 4,11 (a). The continuous electronic

DOS in a CNT is divided into a series of spikes because of radial confinement of the

wave function which is referred to as Van Hove singularities shown in Figure 4.10 and

Figure 4.11. It may be seen in Figures 4.10(b) and 4.11(b) that the universal relation for

the armchair [2] nanotubes has zero band gaps near the Fermi level. At Fermi level the

DOS between the two adjacent Van Hove singularities has some finite value for metallic

tubes shown in Figure 4.10(b) and Figure 4.11(b) while the DOS is zero at the Fermi

level for semiconducting nature of zigzag tubes see Figure 4.10 (a). It may be noted that

the zigzag tube (9, 0) is metallic in nature. It has been already verified through Scanning-

Tunneling Microscopy (STM) that the PCNTs both metallic and semiconducting possess

DOS [163].

4.3 Electronic Transportation in PCNTs and CNTs with Intramolecular Junction (CNT-IMJ)

Electronic transportation property of carbon nanotubes is mainly defined from the

theoretical point of view. Transport properties of carbon nanotubes are interesting

because of unique topological structures of tubes and become more interesting when

68

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different structures of carbon nanotubes are connected to one another. Electronic

transportation measurements are also possible through single and multi-wall carbon

nanotubes. However, the single-wall nanotubes usually exhibit large differences,

presumably, due to non-ideal contacts.

Experimentally, the electronic transportation is an analogue to the Transmission

Electron Microscope (TEM) which is generally used to characterize the microstructure of

materials with very high spatial resolution. This provides information about the

morphology, crystal structure and defects, crystal phases, composition etc. and the

magnetic microstructure can also be obtained by a combination of electron optical

imaging (2.4 A point resolution), electron diffraction and small probe (20 A) capabilities.

The Transmission Electron Microscope utilizes a high energy electron beam transmitted

through a very thin sample to image and investigate the microstructure of materials with

atomic scale resolution. Electrons are focused with electromagnetic lenses and the image

is obtained on a fluorescent screen or verified on film or digital camera.

In the following subsections electronic states and transport properties of PCNTs

and CNTs with Intramolecular Junctions (CNT-IMJ) are discussed and determined

theoretically with the help of band structure and transmission.

Table 4.2 PCNTs used for Calculations of Electronic Structure

Cases 1 2 3 4 5 6 7 8 9 10

PCNT (5 ,0) Semiconductor

(6,0) Metallic (7,0) Semiconductor (8,0) Semiconductor

(9,0) Metallic (10, 0) Semiconductor

(3, 3) Metallic (4,4) Metallic (5 ,5) Metallic (6,6) Metallic

Radius{A) 1.96 2.35 2.74 3.13 3.52 3.91 2.03 2.03 3.39 4.07

Total no of atoms 190 228 266 304 342 380 198 264 330 396

69

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4.3.1 PCNTs Used for Calculations of Transmission

In this Section ten carbon nanotubes have been employed using six

semiconductors and four metallic nanotubes with different radii as given above.

4.3.2 Predicting Transmission of Electrons through PCNTs

It is possible to evaluate the performance of various atomic models by calculating

the transmission and the local electronic density of states (LDOS) and comparing these

with experiments [15].The theoretical transmission through PCNT may be calculated by

using the tube in the form of a MOSFET. This MOSFET assembly involves a channel

made of CNT as shown in Figure 4.12. It is coimected with two electrodes: a source and;

a drain and an insulating thin film, usually silicon dioxide, separates the channel, source

and the drain from a third electrode called the gate (G). By applying a voltage Vgs

between the gate and source, the conductance of the semiconducting channel can be

modulated. Charge carriers (electrons or holes) traveling between source and drain

encounter a material and structure-dependent energy barrier in the bulk of the

semiconductor. Transmission has been calculated using this assembly for PCNT (10, 10)

in the form of MOSFET chaimel structure described above [166]. Before calculating the

transmission the PCNTs are optimized by using Molecular Mechanics energy

minimization technique [19,23, 24].

Tine system as shown in Figure 4.1 lis divided into three parts, the main channel

that contains PCNT which is coupled to its two nearby layers i.e. electrodes. The channel

has two vertical grids facing each other at the ends of the tubes containing 1000 energy

points on each grid. As described before in the thesis the commonly used technique is for

determining the electronic structure of SWNTs is the Tight Binding Method (TBM) [14,

15] and is a standard procedure in solid-state physics and performs quite well for the case

of weak overiap of atomic wave functions in an insulating crystal. In the present work in

70

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almost each case of the PCNT used is about 40 A in length with different radii. The

energy grid voltage is ±12eV at each end of PCNT while ±2 eV gate voltage is used at

the lower and upper bound of the gate respectively.

^^Octrod-

Holes ^-^-¥ •

G;itv\ * •'•''"'" iMiHituhc

Figure 4.12 MOSFET structure with channel made ofCNT.

The transmission can be expressed in terms of die Green's functions for the

carbon nanotubes and coupling of the carbon nanotubes to the contact electrodes [21, 22,

194] as:

r = rr[riG'T2G"] (4.8)

where Cand Care the retarded and advance Green's functions of the carbon nanotube.

Fi and r2are functions that describe the coupling of the carbon nanotube to the electrodes.

The Green's function of the whole system is given as:

Gie-H) = l (4.9)

where e = E -\-ir] with rj arbitrary- and small and / is the identity matrix. Here the

Hamiltonian of the system is expressed as a discrete real space matrix consisting of the

carbon nanotube and the semi- infinite electrodes. The above function is divided into sub-

malrJces thai correspond to the individual subsystems:

- 1

'LRC "RC GR "•LC

0

ie-Hc) K CR (4.10)

4, (6 - W«)>

71

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The matrix e - Hciepresents the finite isolated carbon nanotube, e - H^«gives the

infinite electrodes, and /icsand h^c are coupling matrices that will be non zero only for

adjacent points in the nanotube and the electrodes respectively. Gcan be calculated [22]

as:

r,a 1-1 (4.11)

where 'Z]^'^ = hl^gihic and '£,2'^ = hcRQihljf are defined as the self-energy terms due

to the semi-infinite electrode and ^(i^) = (e-//(i„Ry) are electrodes' Green's

functions. The self-energy terms can be considered as effective Hamiltonians that arise

from the coupling of the carbon nanotube with the electrodes. After knowing the Green's

functions, the coupling functions /^ 2 can be obtained as [22]:

/l,2(f) = 42^^^^-J[^f] (4.12)

where ^•1,2^^^''^ Ei,2^are the advanced Hermitian self-energy and the retarded

Hermitian self-energy which is the conjugate of the advanced Hermitian self-energy.

The distinctive band structure of metallic carbon nanotubes is partially responsible

for their excellent current carrying capacity and is different from the electronic band

structure of conventional metjils. The transmission versus energy is an important feature

of the electronic band structure of metallic carbon nanotubes and it is necessary to

understand their current-voltage characteristics. The band structure of carbon nanotube

(5, 5) armchair is given in Figure 4.13(a) with energy verse wave vector. Figure 4.13(a)

displays various sub-bands of the band structure due to quantization of the wave vector

around the circumference of a carbon nanotube. The conductance and valence bands have

mirror symmetry so the Fermi energy is at the energy where the sub-bands denoted by the

green lines cross {E = 0) independent of nanotube diameter as shown Figure 4.13(a).

72

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These sub-bands are called crossing sub-bands. The last green colour lines of Figure

4.13(a) crossing at £ = 0 is not degenerate sub-bands and each contributes one chaimel

for transmission. The location of wave vector k where the crossing of lines occur changes

with the nanotube chirality. There are only two sub-bands per spin at the Fermi energy'

which are independent of nanotube diameter and chirality. Similar results of transmission

for PCNT (10,10) are available calculated in Anantram et al [167].

In Figure 4.13(b) electron energy distribution versus transmission is given. The

total transmission is equal to the probability times the nimiber of channels. The

transmission probability' for PCNT ma>' be taken equal to 1 assuming no scattering. The

total transmission shows steps when a sub-band opens or closes as shown in Figure

4.13(b). The figure also displays the magnitude of change in transmission and these steps

represent the sub-band degeneracy of the band structure. As seen in Figure 4.13 (b) the

kt/kimsx

9:

i^.

r.'*\

* - ' i'>

U

* • :

e .1...

1

1

# w Al. "J

1

1

k * ' • V ' - * -

IL_

_r"

• * * -

Transinisiion

Figure 4.13(a) Band structure of carbon nanotube of (5, S) and (b) Transrmssioru

73

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13

12

11

10

1 1

(A

I I

fr

! i

•4-

i! I

I

Armchair CNT (3,3) Diameter 4.06 Ang Armchair CNT (4,4) Diameter 5.42 Aug Armchair CNT (S, ^ Diameter 6.78 Ang Armchair CNT (6,6) Diameter 8.14 Aug

n d \

i ••-{•"?

t 'I

1 i i i i i iri lMiniii i i if i i i i i i i i i i i i i i i iMiuiii i i i iniii i i i i i i i i iMiiii i i i i i i i i i i i i i i i i| i i i i i i i i i if i i

Enei^ (eV)

Figure 4.14 Transmission of different armchair carbon nanotubes.

total transmission at the Fermi energy (E = 0) is equal to 2. At about 1.75 eV, the

transmission jumps from two to six units because the sub-bands have a degeneracy of two

as shown with green colour lines (except the last two green lines which cross at £ = 0

having no degeneracy).

The study of transmission in different armchair CNTs as presented in Table 4.2

with increasing diameters has been carried out and given in Figure4.14. It may be seen

from the figure that change of armchair structures (n, n) in terms of diameter does not

effect the variation in transmission at Fermi level and the transmission value remains 2 at

Fermi level irrespective of the tube. The results also show that the electron energy

difference of armchair CNTs decrease with increase in diameter, for example, the electron

energy difference for armchair (3, 3) is 4.62 eV while for armchair (6, 6) it is 2.66 eV.

The total sub-bands and total transmission increases with increase in diameter as the

74

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Transmisiition

Figure 4.15 (a) Band structure of carbon nanotube of (5, 0) and (b) Transmission.

12;

5

1]

Zigzag CNT (5,0) Diameta- 3.92 Ang Zigzag CNT (6,0) Diameta- 4.70 Ang Zigzag CNT (7,0) Diameta- 5.48 Ang Zigzag CNT (8,0) Diameter 6.26 Ang Zigzag CNT (9,0) Uameta 7.04 Ang Zigzag CNT(10,0) Mameto- 7.82 Ang

£ I 111 M i l pfrrTTTTTrnnTTTTTT rft iiiiiijiiMiiiiiiliiiiiiiMiiii[fim[iiMmiiiliiiiiiiiiiiiiiiiiiiiiiiiiiiiii j i i i i f i f lnfi imil i i i i i i

Energy (eV)

Figure 4.16 Transmission of different zigzag carbon nanotubes.

73

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number of quantum numbers arising from quantization of the electron wave function

around the nanotubc circumference also become larger.

Figure 4.15(a) displays various sub-bands of the band structure of zigzag carbon

nanotube (5, 0) having the band gap of 2.06 eV. It is observed that zigz^ tubes become

metallic which show no band gap when the tubes are such that (2n + m)/3 is an integer

otherwise it remains semiconducting showing band gap. Further details of zigzag

nanotube and its band structure may be seen in Section 4.2.2. Figure 4.15(b) represents

electron enei^ distribution versus transmission. In case of semiconducting CNT (5, 0)

the transmission becomes zero at the Fermi level. As defined earlier dte total transmission

is equal to the probability times the number of channels. The transmission variation also

demonstrates steps when a sub-band opens or closes and these sub-bands have a

degeneracy of 2 as shown in Figure 4.15 (b). The transmission of different zigzag CNTs

described in Table 4.2 with increase of diameto* has been calculated and displayed in

Figure 4.16. The figure also shows that the number of transmission steps increase with

increase in diameter of zigzag carbon nanotubes. It should be noted that die

semiconducting sub-bands referred to as non-crossing sub-baids as well as crossing sub-

bands depend on the indices (n, 0).

F^ure 4.16 gives electron energy difference of various ngzag carbon nanotubes

with increase in diameter. It is found that for all metallic zigzag carbon nanotubes

electron energy difference decrease with increase in diameter at Fermi level but die

transmission remains constant and is equal to 1 It is interesting to note diat the

transmission of all semiconductor zigz^ tubes is zero at Fermi level and have band gaps

which decrease with increase in diameter. In Figure 4.16, for example, band gap o§

semiconductor zigz^ naiotube (5, 0) is 2,06 eV while the band gap for (10, 0) is

0.96 eV.

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4.3.3 CNT with Intramolecular Junctions (CNT-IMJs)

4.3.3.1 Introduction

The physical structure of the Intramolecular Junctions (IMJ) is much more

complex than simple CNTs. The carbon nanotubes with Intramolecular Junctions are

formed due to Stone-Wales defect in the CNTs(for further details see Section

2.2.2).When two different CNTs are joined by IMJ the energy levels of each CNT must

split at the joint so that there will be redistribution of energy levels to accommodate

electrons of the new system.

To construct nanotubes widi Intrmnolecular Junctions (IMJs) geometrically, the

carbon nanotube indices (n, m) that correspond to the specific combination of ^ and 6 [37]

are determined by using an iterative projection matching mediod [182]. The

semiconducting-semiconducting, metallic-metallic and semiconducting-metallic CNTs

junctions may be constructed with proper choice of tube diameters and pentagon-

heptagon pairs otherwise the carbon nanotubes do not join to form IMJs. The calculation

method used earlier (Section 4.3.2) for prediction of transmission of PCNTs is again

employed here for CNT-IMJs by treating them as a channel in Hie MOSFET.

4.3.3.2 CNTs with Circumferential Type IMJ

Sixteen (16) numbers of chiral carbon nanotubes are selected so that die pairs widi

Intramolecular Junctions are of almost equal radius. These CNTs are used to form eight

(8) CNT-IMJs with increasing order of CNT index (n, m) as shown in Table 4.3. All such

combinations are formed with the circumferencial type of defect explained earlier in

Section 2.2.3.

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Table 4.3 Different Combinations ofPCNTs with Circumferential Type CNT-lMJs

Case No.

1 S-S IMJ

2 S-S IMJ

3 M-M IM.I

4 S-M IMJ

5 S-S IMJ

6 S-M IMJ

7 M-MIM.T

8 S-SIMJ

PCNTs Left Rigftt

(5,3) Semiconductor

(5, 4) Semiconductor

(6,3) Metallic

(6,4) Semiconductor

(6,4) Semiconductor

(7,3) Semiconductor

(7,4) Metallic

(8.4) Semiconductor

(5,3) Semiconductor

(5,4) Semiconductor

(6,3) Metallic

(6.3) Metallic

(6.4) Semiconductor

(7,4) Metallic

(7,4) Metallic

(8.4) Semiconductor

Radius(A)

2.74

3.06

3.11

3.11/ 3.41 3,11

3.48/ 3.77 3.77

4.14

Total no of atoms m Assembly

266

294

304

314

332

353

364

406

S-S IMJ ; Semiconductor- Semiconductor Intramolecular Junction M-M IMJ : Metallic-Metallic Intramolecular Junction S-M IMJ : Semiconductor- Metallic Intramolecular Junction

Figure 4.17 Semiconductor-Semiconductor Circumferential CNT-IMJ (5,3)-(5, 3).

Figure 4.18 Semiconductor-Semiconductor Circumferential CNT-IMJ (5, 4)-(5, 4).

Figure 4.19 MetaUic-Metallic Circumferential CNT-IMJ (6,3)-(6, 3).

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Figure 4.20 Semiconductor-Metallic Circumferential CNT-IMJ (6, 4)-(6, 3).

Figure 4.21 Semiconductor-Semiconductor Circumferential CNT-IMJ (6, 4)-(6, 4).

Figure 4.22 Semiconductor-Metallic Circunrferential CNT-IMJ(7,3)-(7, 4).

Figure 4.23 MetalUc-MaaUic Circumferential CNT-IMJ (7, 4)-(7, 4).

Figure 4.24 Semiconductor-Semiconductor Circumferential CNT-IMJ(8, 4)-(8,4).

In the present study the Local Density of States (LDOS) and the transmission of

the above IMJs are calculated. The details of structures of Ae above systems are given in

Section 2.2.2.The properties of CNT-IMJ, whether metal or semiconductor, depend on its

structure when these are joined together to form metal-semiconductor, semiconductor-

semiconductor or metal-metal junctions. The rich interplay between the structural and

79

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electronic properties of IMJs give rise to new physical phenomena and the possibility of

novel nanoscale device applications. It is assumed that these intramolecular junction

configurations of half-tubes of different helicity are joined seamlessly vwth each other

without much disruption in structure,

A MOSFET using CNT with Intramolecular Junction as a channel through which

the theoretical transmission is calculated shown in Figure 4.25(b). Figure 4.2S(a)

depicts MOSFET with PCNT.As described in Section 4.3.2 the MOSFET is connected

with two electrodes- a source and drain and an insulating thin film, usually silicon

dioxide, separates the channel, source and drain from a third electrode called the gate (G)

displayed schematically in Figure4.25.'The source and drain voltage ± 12eV is used at

each end of CNT while ± 2 eV gate voltage is applied at tiie lower and upper bound of

the gate respectively. Various tj-pes of CNTs shown in Figure 4.17-4.24 were used in

Figure 4.25(a) and theoretical transmission and the Local Density of State (LDOS) were

calculated. Different pairs of CNT-IMJs as described in Table 4.3 (were constructed and

employed as in Figure 4.25(b)) and theoretical calculations for transmissions and LDOS

are carried out.

(a) (b)

iiiih hrminul ('.fiw I'-rmtnal

Figure 4.25 MOSFET structure (a) channel made of CNT structure and (b) channel made of CNT Intramolecular Junctions.

80

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Out of the eight (8) cases of IMJs studied here three are described below. The

results of similar systems like Semiconducting-Semiconducting IMJ (cases 1, 2, 5, 8),

Metallic-Metallic IMJ (cases 3, 7) and Semiconducting-Metallic IMJ (cases 4, 6) exhibit

similar behavior. Therefore, the combinations of cases 2, 6 and 7 (see Table 4.3) above

are chosen and explained below.

4.3.3.3 Electron Local DOS (LDOS) of CNT-IMJ (Circumferential)

The aim here is to calculate the atomic structure, LDOS of CHTs without defects

and LDOS of circumferential type of CNT-IMJs. The introduction of pentagon-heptagon

TarT»A

b ' ^ • •.»' ' iiltlJ' ' ' <^-^ (a)

BiMrcCtV)

CKf'UU<M)'(9k4

Figure 4.26 Near Junction LDOS ofSS Combination (a) PCNT (S, 4) and (b) CNT-IMJ (5, 4) - (5, 4).

81

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pair defects into the hexagonal networlc of CNTs can alter the helicity of CNTs as well as

their fundamental electronic structure. Various nanoscale devices can be built by using

different combinations of tube intramolecular junctions by altering the electronic

properties to the desired behaviour.

LDOS near the junctions in various CNT pairs is calculated and presented in

Figures 4.26 - Figures 4.28. Similar results of CNT -IMJs obtained through the Tight

Binding Method for the n electrons are available in [177].

LDOS -Semiconductor-Semiconductor IMJ

Figure 4.26(a) shows LDOS of PCNT (5, 4) given by red lines. PCNT (5,4) is of

semiconductor in nature and has a band gap of 1.22eV. A magnified figure of LDOS to

show details of variation near the Fermi level is also given. Figure 4.26(b) displays

LDOS for CNT-IMJs (5, 4) - (5, 4) (Semiconductor-Semiconductor) calculated over a

few rings at the junction shown in blue lines. It may be noted that the cell refers to one

unit of the tube and the ring having the atoms around the circumference of CNTs as

explained in Section 2.2.2. Both systems, the PCNT (5, 4) and S-S CNT-IMJ (5, 4) - (5,

4), give sharp LDOS features corresponding to the Van Hove singularities of a quasi ID

system. It is obvious that LDOS of PCNT (5, 4) is mirror image with respect to Fermi

level (E=0) shown in Figure 4.26(a). It is observed in Figure 4.26((b) (blue lines) that

for CNT- IMJ the LDOS distribution changes quite rapidly as one moves away from the

junction and for a distance substantially away (from the junction) the LDOS of the system

(IMJ (5,4) - (5,4)) becomes same as that of PCNT (5,4). It is also seen from the magnified

inset showing conditions near the Fermi level that the LDOS of semiconducting CNT

(5, 4) and CNT -IMJ(5, 4) - (5, 4) at Fermi level remains zero but in the case of IMJ the

band gap gets reduced to 1.0 eV from 1.22 eV for PCNT (5, 4). There is no effect of

82

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pentagon-heptagon pairs on LDOS at Fenni level. LDOS peaks decrease towards the

positive energies in comparison with negative energies due to pentagon-heptagon defects.

It is clear that moving away from the interface tiie LDOS features of PCNT is recovered.

I* •> M t V , , , . l .

Figure 4.27 Near Junction LDOS ofM-M Combination (a) (7, 4) PCNT and (b) CNT-IMJ(7,4)-(7,4).

LDOS -MetaUic-MetaUic IMJ

Figures 4.27 (a) shows LDOS of PCNT (7, 4) given by the red lines. LDOS for

CNT -IMJs (7, 4) - (7, 4) is given by the blue lines in Figure 4.27 (b). PCNT (7, 4) is

metallic in nature. LDOS calculations of CNT-IMJ (7, 4) - (7, 4)) has been carried out

over few a rings of the nanotube in the vicinity of the interface. LDOS of metallic PCNT

(7, 4) and CNT-IMJs((7, 4) - (7, 4)) show sharp features corresponding to Van Hove

83

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singularities of a quasi ID system. Similar to the semiconductor PCNT given above the

LDOS of metallic PCNT(7, 4) also has mirror image with respect to Fermi level

(E=0)?Lnd has a finite value at Fermi level with electron energy difference of 2.78 eV due

to metallic nature as shown in Figure 4.27(a). It is observed in Figures 4.27(b) that the

comparison with PCNTs, CNT-IMJ of ((7, 4) - (7, 4)) shows changes in LDOS due to

insertion of pentagon-heptagon pairs. The electron energy difference gets reduced to 2.28

eV in CNT-IMJs while the LDOS remains the same at the Fermi level.

LDOS - Semiconductor-Metallic IMJ

LDOS are calculated for CNT-IMJ (Semiconductor (7, 3) - Metallic (7, 4)), with

the left side being PCNT (7,3) and the right side the metallic PCNT (7, 4). LDOS of both

PCNTs are obtained separately in a few number of rings and displayed in Figure 4.28(a)

and Figure 4.28(b) respectively. LDOS of semiconductor PCNT (7, 3) has zero value at

Fermi level and has a band gap of 1.04 eV and LDOS of metallic PCNT (7, 4) at Fermi

level was greater than 0.0. The LDOS of semiconducting PCNT (7, 3) and that of metallic

PCNT (7, 4) are mirror image with respect to Fermi level (E=0j.LDOS of CNT-IMJ

between (7, 3) and (7, 4) was found to have a value 0.0 at the Fermi level and has a band

gap of 0.81 eV displayed by blue lines in Figure 4.28(c). Insets in Figures 4.2S(a)-(c)

give magnified LDOS distributions near the Fermi level in the above cases. Sharp

features of LDOS corresponding to the Van Hove singularities of a quasi ID system are

displayed in Figures 4.28(a)-(c).

The result of Figure4.28(c) demonstrates that the behavior of CNT-IMJ Local

Density of State transforms from pure semiconductor to metallic across the junction. This

84

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PCOTtM • . . . • t > . A . M...i.. M . I . . . .I . ' . .

•U •). A«. .« . . . v . . I . It.

i .M...i,. M...t...ff....\,..ff., .

clfT•lMl^^JH^4)

J

5—T?-T—a—r~r,—1—iT-

(c)

Fiff«re 4.2« Near Junction LDOS of S-M Combination (a) PCNT (7, 3) (b) PCNT (7, 4) and (c) CNT-IMJ (7, 3) - (7, 4).

IS a real semiconductor-metal hybrid structure in which the transition takes place between

the two different types of systems moving from die semiconductor to metallic. It is

observed that the LDOS of the semiconductor (7, 3)is zero and that of metal (7, 4) is

85

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greater than zero at the Fermi level are diluted within a few rings of atoms but CNT-IMJ

(7, 3) - (7,4) has a very low of LDOS nearly equal to zero at the Fermi level. Similar type

of LDOS results with different CNTs have been reported (18].

4.3.3.4 Electron Transmission through CNT-IMJs (Circumferential)

Transmission ofSendconductor-Senuconductor IMJ

Figure 4.29 shows the variation of transmission for Semiconductor-

Semiconductor CNT-IMJs (5, 4) - (5,4) through the Intramoleculiff Junction mid also for

PCNT (5, 4). The red lines represait the transmission of PCNT and the blue lines, the

transmission of CNT-IMJs (5, 4) - (5,4). It is observed that transmission in PCNT (5, 4)

has mirror image with respect to Fermi level (E=0). But the two PCNTs when combined

to form CNT-IMJ the transmission quickly changes from that ofthe transmission of

10-

8-

a -.2 -| 6 -

e . U •

H4.

2"

1

J „„M(JJ

;^ssm,

f - ^

>

r\

irciHI

- .

r'

CNT(5,4) TfT-IMJ (5,4)-(5,4)

f f -

.J ^

/

„„.j„ 4'" 6 I I I I I

Energy (eV)

Figure 4.29 Transmission: PCNT (5, 4) and CNT-IMJ (5, 4) - (5, 4).

86

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original PCNTs across the junction within a few rings of atoms due to the presence of

inserting pentagon-heptagon pairs. It is also observed that the transmission for the

junction gets reduced as shown in Figure 4.29. It is noted that there is no change of

transmission in the joint at the Fermi level and it remains zero as before. It is interesting

to note that the variation of transmission for negative and positive energies becomes

unsymmetric.

12-

10-

1

PCNT (7,4) CNT-IMJ(7,4)-(7,4)

\ IIMI>lllllllll|IIIIMIIIIIHIIIIIIIIII)JIIIII!inillllllllllllllllllllltllllllllMIIIIIIIIIIIJ

Energy (eV)

Figure 4.30 Transmission: PCNT(7, 4) and CNT-IMJ(7, 4) - (7, 4).

Transnussion of Metallic-Metallic IMJ

Figure 4.30 displays transmissions for metallic PCNT (7,4) and CNT-IMJ (7,4) -

(7, 4).Here also the red lines in the figure represent transmission of PCNT (7, 4) and the

blue lines depict the transmission of CNT-IMJ (7, 4) - (7, 4). It is observed that

transmission in metallic PCNT (7, 4) has fransmission value = 2 at Fermi level given by

red lines. Again mirror im^e of transmission for PCNT (7, 4) with respect to Fermi level

87

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(E=0) is obtained. Contrary to the transmission of the PCNT the transmission variation

loses symmetry for CNT-IMJ. It is noted that the CNTs (7, 4) when combined to form

CNT-IMJ (7, 4) - (7, 4) shows that the transmission at the Fermi level decreases. Further,

throughout for Energy between -8 to +8 eV transmission is reduced for the junction in

comparison with the PCNT (7,4) as shown in Figure 4.30.

Transmission of Semiconductor-Metallic IMJ

Figure 4.31 displays the predicted transmission of the semiconducting PCNT

(7, 3), the metallic PCNT (7, 4) and CNT ((7, 3) - (7, 4)). The transmission of

semiconducting PCNT (7, 3) is given by red lines; the green lines give the transmission

through the metallic PCNT (7, 4) and the transmission of CNT-IMJ ((7, 3) - (7, 4)) is

shown by the blue lines respectively. It is seen that the semiconducting CNT (7, 3) and

metallic CNT (7, 4) give mirror image transmission with respect to Fermi level which is

absent in CNT-IMJ. The transmission of semiconducting CNT (7, 3) is zero at the Fermi

level while the transmission of metallic CNT (7, 4) has a value of 2 at the Fermi level.

After the combination of CNT(7, 3) and CNT (7, 4) with Intramolecular Junction, it is

seen that the transmission is reduced to zero at the Fermi level and semiconductor CNT

characteristics remain dominant over the metallic CNT as shown in Figure4.31. The

passage of electron transmission decreases at Intramolecular Junction in the carbon

nanotube due to the formation of pentagon and heptagon pair as the transmission is

directly proportional to chirality in carbon nanotubes. It is observed that when carbon

nanotubes of different characteristics are joined together for example semiconductor

with the metallic tube greater deviations occur in transmission than when joining of

semiconductor with semiconductor or metallic with metallic. Similar types of

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transmission results have been reported [168] in which two CNTs are connected but in

bent shape.

PCNT (1,3) PCNT(7,4)

Energy (eV)

Figure 4.31 Transmission: PCNT(7, 3), PCNT (7, 4) and CNT-IMJ(7, 3) - (7, 4).

4.3.3.5 CNTs with Other Types of Junctions

In Sections 2.2.2 and 2.2.3 different types of Intramolecular Junctions which are

likely to exist were explained e.g. circumferential, distributed or grouped. In the previous

study in Section 4.3.3.4 only the ring or circumferential type of Intramolecular Junctions

were investigated and LDOS as well as transmissions through these junctions were

calculated for various combinations of CNTs. In the present section calculations of

transmissions through CNTs with other two defects i.e. the distributed and grouped types

of Intramolecular Jimctions are investigated.

In this Section eight (8) cases of different CNT-IMJ structures have been studied.

As explained earlier for building a CNT Intramolecular Junction model, an iterative

projection matching method [182] is used through which the indices (n, m)o( the two

connecting PCNTs corresponding to specific combination of f/and 9 are [37] determined.

89

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C/1

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The PCNTs are connected by Stone-Wales defect lying at circumferential, distributed or

grouped sites. For further details see Section 2.2.3.

Figure 4.32 Metallic-Metallic Circumferential CNT-IMJ (6, 3)-(6,3).

Figure 4.33 Metallic-Metallic Distributed CNT-IMJ (6, 3)-(6, 3).

Figure 4.34 Metallic-Metallic Grouped CNT-IMJ (6,3)-(6, 3).

Eight (8) cases as given in Table 4.4 have been considered for calculation of

transmission through various combinations of PCNTs with different types of defects. The

information regarding radii along with the total number of atoms of the assembly

considered for calculations is also provided in Table ^.^.Three types of junctions,

namely: the circumferential CNT-IMJ; distributed CNT-IMJ; and grouped CNT-IMJ are

shown in Figure 4.32, Figure 4.33 and Figure 4.34 respectively for two metallic tubes of

similar configuration (6. 3) with the pairs of indices (n, m) for left and right PCNTs. In

the circumferential CNT-lMJs the pentagons and heptagons are formed at the

circumference of the joint of the two carbon nanotubes as shown in Figure4.32. On the

other hand in the distributed junctions these pentagons- heptagons combinations are

distributed over the nanotubes as given in Figure4.33. Figure 4.34 shows the grouped

type of defect where pentagons- heptagons groups are formed as a group at one side near

91

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the middle of the junction of nanotubes. It is interesting to note that for CNT-IMJ ((5,4)-

(5, 4)) all three types of defects give rise to the same configuration of the junction and can

be seen in Figure 4.18 and therefore, no changes in transmission and other properties of

the junction are expected.

Different combinations of PCNTs with the above mentioned three types of defects

are displayed in Table 4.4 which have been studied here with increasing order of indices

(n, m). In Table 4.4 cases 1-8 have been considered and calculations of transmission have

been carried out.

4.3.3.6 Electron Transmission through CNTs with Different Types of Junctions

The method of calculation of transmission for CNT-IMJs (Circumferential) has

already been given in Section 4.3.3.4 and the same method has again been employed here

for the calculation of transmission for other two types of junctions. A MOSFET model

used in [166] and described in Section 4.3.3.2 has been used here for all cases considered

in Table 4.4.

The results of calculations of electron transmission in eight cases of CNT-IMJs

are explained below in three classes: Semiconducting-Semiconducting CNT-IMJs,

Metallic-Metallic CNT-IMJs and Semiconducting-Metallic CNT-IMJs.

4.3.3.6 (a) Transmission through Semiconductor - Semiconductor (S-S) IMJ

Figure 4.35 shows transmission for Semiconductor-Semiconductor CNT-IMJs pertaining

to four cases namely: case-1; case-2; case-5; and case-8 as given in Table 4,4. In Figure

4.35 blue lines represent the transmission through the circumferential CNT-IMJs; the

green lines for the distributed junctions; and the red lines shows the grouped CNT-IMJs;

and the black lines give transmission in PCNTs. It is obvious that transmission through

the semiconductor PCNT remains zero at the Fermi level [168]. The results show that the

92

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<1rMraf«r«KfcllC-NT.|MJ(lJ).(5,3» Db(l«m«irNT-lM4(S,J)-(W) fironiMdfVr-IMJ (M) • (J..t)

Case - 1

J - 1 • • ' • « • • .

burtf (cV) (1rcanfatn<l<il(nT-IMJiS,4)-(!v4)

— nuilbl lcd CNT- rMJ (Si4) - (S.4) t/re^>«IOVr-IMJ(M).(5,0

Case - 2

Energy (eV)

Clrtamfenud*! CNT- IMJ (6^4) - (<s4) Dittribilfd Crn*- IMJ (6,4) • ( M ) Gnmpcd CNT- IMJ ( M ) - (6,4) PCNT«i,4)

Case - 5

£ a e r g y ^eV)

Qttumtitttimi CNT-IMJ(M)-(II<')) nuriliDtnt CUT- IMJ (8.4) -1&4) Cinwita) (HOT- IMJ (M) - (Kt)

Case - 8

Energy (»V)

Figure 4.35 Transmission: Case-1, Case-2, Case-5 and Case-8.

93

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transmission in each of these cases of Semiconductor-Semiconductor IMJs there is no

effect of heptagons-pentagons at the Fermi level and the transmission remains zero at

E=0 although the band gap is reduced. It is to be noted that the transmission on both

sides of Fermi level in Figure 4.35 (cases 1, 2, 5 and 8) does not remain symmetric. It is

perhaps due to un-symmetric occurrences of heptagon -pentagons groups at the junctions.

The transmissions of circumferential (5, 4) - (5, 4) has already been discussed in Section

4.3.3.4. It was observed therein that the transmission of circumferential CNT-IMJs (5, 4)

gets reduced at each level when compared with the transmission of (5,4) PCNT as shown

in Figure 4.29 and Figure 4.35. But there is no change of transmission in the joint at the

Fermi level and it remains zero as in the PCNT (5, 4). It is interesting to note that for

Semiconductor-Semiconductor IMJs for the cases discussed above, it is found that the

band gap is reduced at the Fermi level from the band gap value of its original PCNTs.

This is due to the presence of pentagons - heptagons pairs.

Calculations have also been carried out to study changes in the band gaps of

various IMJs given in Table 4.5. The table shows band gaps of the cases (1- 8) of IMJ

considered and also of the connecting PCNTs. The band gaps are calculated for various

types of IMJs of possible combinations of PCNTs i.e. circumferential, distributed and

grouped type of defects.

It may be seen in the Table 4.5 for semiconductor PCNTs (5, 3); the band gap

calculated is 1.36 eV. The band gaps for three defects namely circumferential, distributed

and grouped for Semiconductor-Semiconductor CNT- IMJ ((5, 3) - (5, 3)) may be seen in

this table. It may be noted that the band gap reduces markedly with different defect. The

band gaps for circumferential and distributed CNT-IMJ (5, 3) are reduced by

approximately 50% (0.79eV and 0.98 eV) from the value of band gap of PCNT (5, 3)

(1.36eV). The band gap decreases further to value of 0.44 eV for the case of grouped

94

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(/3

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defect. For these defects in Semiconductor-Semiconductor IMJs (5, 3) two pairs of

heptagon - pentagon are formed in eacii case. Clearly the changes in band gap can be

attributed to distributions of heptagon - pentagon pairs in the defect region. In the case of

circumferential, distributed and grouped defects, these pairs appear at different locations

while in the grouped the pairs are clustered at any one location. This may be one of the

reasons that the band gaps of circumferential and distributed have a high value while for

the grouped defects it is lowered. The same trend is found for case - 5 Semiconductor-

Semiconductor IMJs (6, 4) where the band gaps for circumferential and distributed

defects it is 0.55 eV and 0.56 eV respectively while for the group defect it is 0.35 eV. The

band gap for PCNT (6, 4) is 1.06 eV.

It is interesting to see that for the other two cases of Semiconductor-

Semiconductor IMJs namely case - 2 (Semiconductor-Semiconductor (5, 4) IMJ) and

case - 8 (Semiconductor-Semiconductor (8, 4) IMJ) for which the band gaps for all the

above mentioned defects remain almost the same and has about the same value as that of

the concerned PCNT.Case-2, ((5, 4) - (5, 4)) IMJ has the same quantum configuration

structure for all types of defects and has only one pair of heptagon - pentagon with

exactly the same geometry in the nanotube structure. Thus the same transmission and

same band gap of value 1.0 eV is obtained for the all the above types of CNT-IMJs and is

given by blue lines in Figure 4.35seeTable 4.5.

For the case-8 of Table 4.5 the band gap of PCNT (8, 4) is 0.88 eV. The band

gaps of circumferential, distributed and grouped ((8, 4) - (8, 4)) IMJs are 0.84 eV, 0.86

eV and 0.83 eV respectively. It may be noted that the structures of semiconductor PCNT

(8, 4) and Semiconductor-Semiconductor CNT-IMJs ((8, 4) - (8, 4)) have the largest

diameter among all the nanotubes mentioned above. The ((8, 4) - (8, 4)) IMJs for all types

of defects have 4 pairs of heptagon-pentagon at the junction and in between a number of

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hexagons exist. This reduces the effect of heptagons-pentagons pairs at the junction of

CNT-IMJs and therefore, the band gaps of each ((8, 4) - (8, 4)) IMJ are comparable to

PCNT (8,4) near the Fermi level.

Onuifataelii CNT- IMJ (6,3) - (6,3) nrtiUnteil CNT- IMJ (6,3) - (6,3) Oroii!ttdCNT-IMJ(6,J)-(6,3) PCNT (6,3)

Case -3

il»iiiNii»nniiiji»MiiiMiiiijiniWiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiijiii

Energy (eV)

aitnmfemcial QTT- Mi (7,4) - (7,4) WtrtbBtedCNT-IMJp,4)-(7,4) Oro^CNT-IMJ(7,4)-(7,4) PCNT (7,4)

Case -7

i iuii i i i i i i i i i i i i i i inii i i iyii i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i

Energy (eV)

Figure 4.36 Transmission: Case-3 and Case-7.

97

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4.3.3.6(b) Transmission through Metallic -Metallic (M-M) IMJ

Figure 4.36 gives results of calculations for transmission of metallic CNT-lMJs

pertaining to case-3 (M-M (6, 3) - (6, 3)) and case-7(M-M (7, 4) - (7, 4)) shown in Table

4.4. As before, the blue lines represent the results of circumferential CNT-IMJs. The

dashed green lines show the distributed CNT-IMJs and the long dashed red lines the

grouped CNT-IMJs. The Fermi Energy level is shown in the figure at E=0. The

circumferential (M-M) CNT-IMJs (7, 4) - (7, 4) has already been discussed in Section

4.3.3.4.

At the Fermi level, it is observed that the transmission value of PCNT (6, 3) is 2.

The value of transmission gets reduced to 0.87 in circumferential CNT-IMJ ((6, 3) -

(6, 3)). In case of the distributed CNT-IMJ the transmission between the energy level -2

to +2 eV is 0.5 before the Fermi level and increases to 0.61 at the Fermi level then

reaches to a value of 1.03 .It may be seen in the case of grouped CNT-IMJ ((6, 3) - (6, 3))

that the transmission in the energy range -2 to +2eVdecreases to 0.08 just before the

Fermi level and then reaches to 0.17 at the Fermi level. The lowest transmission is

obtained in the case of grouped CNT-IMJ ((6, 3) - (6, 3)) at the Fermi level among all the

three defects. It may be noted that there exist 3 pairs of heptagon - pentagon in this

combination. The positions of these 3 pairs of heptagon - pentagon may have changed the

transmission values in CNT-IMJ ((6, 3) - (6, 3)) for different defects. Away from the

Fermi level due to presence of these 3 pairs the transmission near the Fermi level for

PCNT (6, 3) is significantly modified and a wavy nature of transmission is obtained,

especially, for the distributed and grouped types of defects. Further, it may be seen that

the transmission does not remain symmetrical about the Fermi level.

In case 7, each IMJ for the aforesaid 3 defects has 3 pairs of pentagon- heptagon

located at different sites of CNT to form three types of IMJs (for further details of

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structures of IMJs see 2.2.3 Section). It has already been discussed in Section 4.3.2 that

all types of metallic PCNTs have transmission value 2 at the Fermi level see Figure 4.36.

The energy level between -2 to+2eV near the Fermi level becomes slightly wavy for

circumferential IMJ (7, 4) - (7, 4) with a reduction reaching to 1.85 units at the Fermi

level as shown in Figure 4.36. It is further seen that the transmission of circumferential

IMJ (7, 4) - (7, 4) reaches to 1.11 units just before and after the Fermi level with two

valleys between the energy range -2 to + 2eV. The transmission of the distributed IMJ (7,

4) - (7, 4) and the grouped IMJ (7, 4) - (7,4) gets reduced and reaches to 0.26 units at the

Fermi level between the energy level -2 to +2 eV. It may be seen that for the grouped IMJ

(7, 4) - (7, 4) the transmission goes as low as to 0.13 just before the Fermi level in the

same energy level. It could be due to the presence of 3 pairs of pentagons- heptagons. It is

observed that the circumferential CNT-IMJ (7, 4) - (7, 4), the distributed CNT-IMJ and

grouped CNT-IMJ remain metallic in nature as all the IMJs have finite value of

transmission at the Fermi level.

4.3.3.6 (c) Transmission througti Semiconductor - Metallic (S-M) IMJ (CNT-Schottky Diodes)

The case of metallic PCNTs connected to semiconductor PCNT through

Intramolecular Junction is equivalent to a Schottky junction diode [78, 175, 176]. The

Schottk}' diode is a semiconductor diode with a low forward voltage drop and a very fast

switching action. When metal is brought into contact with a semiconductor during

fabrication of a chip, electrons diffuse out of the semiconductor into the metal leaving a

region known as the "depletion layer" at the contact that has no free electrons and a small

band gap is formed. The Schottky diode with Intramolecular Junctions (Semiconductor-

Metallic) where two CNTs are connected at a bend has been reported earlier [78]. The

99

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Schottky diodes may also be fabricated by introducing a pentagon and a heptagon into the

hexagonal carbon lattice using two tube segments with different atomic and electronic

structures and by fusing them seamlessly together to create Intramolecular

semiconductor-metal junctions.

Figure 4.37 shows transmission through Semiconductor-Metallic CNT-IMJs for

case-4 and case-6 given in Table 4.4 for all the above three types of defects. In the

present configurations semiconductor PCNTs (6,4) and (7,3) are connected with metallic

PCNTs (6, 3) and (7, 4) to form S-M IMJs. As already explained the transmission of all

semiconductor PCNTs are zero at the Fermi level and the transmission of metallic PCNTs

is 2. It is interesting to note that as given in Figure 4.37 in case - 4 and case - 6the

transmission becomes zero in each case of CNT-IMJs at the Fermi level which shows the

dominant effect of semiconducting behaviour in formation of Semiconductor-Metallic

CNT-IMJs. The calculations show that the transmissions at the Fermi level for the cases

4 and 6 have extremely low values of 0.001 and 0.002 respectively.

In Figure 4.37 for S-M IMJs exhibit band gap and semiconductor behaviour. The

incident electrons from the metallic tube are fully reflected. Due to the presence of the

barrier at the Semiconductor-Metallic interface, the transmission is lesser than that in

either of the respective metallic or semiconductor PCNTs for all energies. The calculation

results for transmission as reported before for case - 4 and case - 6 for S-M IMJ isO.OOl

and 0.002 is very small at the Fermi level and can be taken as zero and the behaviour

would that be same as that of semiconducting tube. The transmission characteristic in

Semiconductor-Metallic CNT-IMJs may be due to its geometrical structure. In case - 4

and case - 6 there are 3 pairs and 4 pairs of heptagon- pentagon respectively lying in the

defective region. Similar types of transmission results of Semiconductor-Metallic CNTs

have also been reported in [168] where two CNTs are connected at a bend. It is noted that

100

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12

ID­

S' B .2

H

arcamfereuclal CNT- EM J (6,4) - (6,3) Dtstrtbnted OTT- IMJ (6,4) - (6,3) Groiq>ed CKT-IMJ (6, 0 - (6,3) PCNT(6,-^ PCNT(6,3) "t

^

-^ .^ ,,, ,i,....

r1 ' '

" - i " " "

r " " J " '

^

p j

r f

} '

iiiiiihiiiiiiiiiiiiiiiiiiiiiiiiiii

Eii«tj)'(«V)

Case - 4

14i

E n e i ^ («V) arcmBto«MtalCNT-IMJ(7,3)-(7,4)

Gron>edCNT-IMJ(7^-(7,4) - PCJJT(7,3)

PCNT(7,4)

Case - 6

Energy (eV)

Figure 4.37 Transmission: Case-4 and Case-6.

the location of pentagons- heptagons at different sites in the joint may be responsible for

the variation of transmission at different levels m CNT-IMJs. Wavy lines are obtained

101

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with reduced step wise transmission which is generally obtained in PCNTs as shown in

Figure 4.37; see Section 4.3.2for further details. The values of transmission are found to

be smaller for positive energies in comparison with negative energies in each case of

CNT-IMJs. Decrease in variations in transmission is seen in the case of circumferential

CNT-IMJs in comparison of other two defects.

Table 4.5 shows calculated band gaps of semiconductor PCNTs (cases 1,2 4,5,6

and 8), S-S IMJs (cases 1,2,5 and 8) and S-M IMJs (cases 4 and 6). For metallic PCNTs

band gaps are zero. In case - 4 the band gap of PCNT(6, 4)is 1.06 eV which is reduced to

0.77 eV, 0.72 eV and 0.71 eV when semiconductor PCNT (6, 4)is connected with

metallic PCNT (6, 3) to form circumferential CNT-IMJ, the distributed CNT-IMJ and

grouped CNT-IMJ (6, 4) - (6, 3) respectively. The decrease in band gaps of IMJs as seen

in case 4 may be due to the change in location of 3 heptagon - pentagon pairs at the

junction. Similar results have been obtained for band gaps in the range of 0.55-0.75 eV

for graphene on silicon schottky (Semiconductor-Metallic) junction [176].

In case - 6 the band gap of semiconductor PCNT (7, 3) has been calculated

asl.04eV. The calculations of Semiconductor-Metallic (7, 3) - (7, 4) CNT-IMJs give

band gaps ofD.SleV, 0.67eV and 0.60 eV for circumferential, the distributed and grouped

types of IMJs respectively. Marked reduction in band gaps in each (7, 3) - (7, 4) IMJ is

observed in comparison with the PCNTs (7, 3). It may be due to the presence of 4 pairs of

heptagon - pentagon in the defect region of IMJ. Similar results are reported for

Semiconductor-Metallic CNT with the band gap value of 0.60 eV [175]. It may be seen

that for the case of grouped defect in (S-M) (7, 3) - (7, 4) IMJ, the present calculations

match the results of [175].

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Chapter - 5: Predictions of Infrared Spectra of Fullerene and Its Derivatives

5.1 Introduction

The vibrational spectrum of a molecule is regarded as a unique physical property

and is a characteristic of the molecule and can be utilized as fingerprints for recognition

by comparison of the spectrum from an "unknown" with the previously recorded

reference spectra. It is possible to find whether a specific fiinctional group is present in

the sample or not in the sample with the help of the Infrared spectrum. If detected, it is

also possible to determine local orientation of the group and its local environment.

In the present chapter, predicted results of Infrared spectra for fullerene and some

of its derivatives are presented. The methodology for determining Infrared spectra has

already been explained in Section 3.3.Three different structural configurations have been

studied here: Ceo; CeoO and; CeoBrg. It may be noted that each nanostructure has a single

Infrared spectrum except for the CeoO which has two spectra as it has one further isomer

[112].

5.2 Infrared Spectra - Results and Discussion

5.2.1 (a) Fullerene (Ceo)

The detailed description of fullerene Ceo has been presented in Section 2.2.4. As

described, there are 60 carbon atoms in fullerene (Ceo) located at the vertices of a

truncated icosahedron shown in Figures. 1. The average nearest-neighbor carbon-carbon

(C-C) distance in Ceois 1.44 A and is almost similar to that of graphite (1.42 A). In Ceo,

each carbon atom is trigonally bonded to three other carbon atoms in a sp^-derived

bonding configuration. A regular (Ceo) truncated icosahedron has 90 edges of equal

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lengths, 60 equivalent vertices, 20 hexagonal faces and 12additional pentagonal faces to

form a closed shell.

F^ure 5.7 C»- PurefuUerene with 60 carbon atoms.

5.2.1 (b) Results of Calculation for C6oInfnired Spectrum

(i) Icosahedron Symmetry for €««

The fullerene (Cgo) structure has 174 degrees of freedom and has icosahedral Ih

symmetry. The icosahedral group has 120 symmetry operations divided into 10

classes.{Ag, Fig, F2g, Gg, Hg, F2u, Gu, Hu). The class of identity consists of 12

primajy 5 fold rotation (12C5 and I2C5 ) with centres at 12 pentagons and 20 secondary 3

fold rotation with centers at 12 hexagonal faces. In addition to the above, it has 30

secondary 2 fold rotations going through 30 edges joining the neighbouring hexagon mid

each of these symmetry operations have invariation symmetry. The character table for Ih

symmetry has 10 irreducible representations of Ih point group symmetry. Out of 180

degrees of freedom for Ceo molecules, there shall be 174 vibrations modes and taking into

104

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account the icosaliedral symmetry and the degenerate modes only 46 distinct frequency

modes are expected.

(ii) Numerical Calculations

The numerical method of calculating Infrared spectrum of Ceo and other structural

configurations is explained in detail in Section 3.3 and all calculations were performed

with the Gaussian program package [110] using Hartree-Fock method.

Hartree - Fock computational technique

In the initial step of the Hartree-Fock calculation technique the physical structure

of the molecule under consideration is specified using the projection method as described

in [37]. The structure so obtained is further optimized on the basis of minimization of

potential energy of the system. The optimization is done using Gaussian procedure

described below. The calculations are carried out for the Infrared and Raman spectra

using the prediction procedure embodied in the Gaussian software [110]. This procedure

consists of obtaining the Hessian matrix containing second-order partial derivatives of

potential V with respect to displacements in the cartesian coordinate system. The above

3N X 3N matrix (N is the number of atoms) of force constant is converted into mass-

weighted cartesian coordinates. The diagonalization of mass-weighted cartesian

coordinates gives 3N eigenvalues and the roots of these eigenvalues are the fundamental

frequencies of the molecule. The next step is to move the center of mass to the origin of

the coordinate system and also to determine the moment of inertia. This matrix is used to

find vectors corresponding to rotations and translations. The present procedure enables to

know the normal modes of vibrations and to distinguish between the lower frequencies

vibrational modes from the rotational and translational vibrational modes.

105

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In the next step of the Gaussian procedure, we generate transformation from mass-

weighted cartesian coordinates to a set a 3N coordinates separating rotation and

translation of molecule to obtain Nvib= 3N- 6 or Nvib = 3N- 5 vibrational modes.

Afterwards the mass-weighted Hessian in the cartesian coordinates is transformed to new

internal coordinates. The number of vibrational coordinates are diagonalized generating

Nvib eigenvalues X= 4ji v and Nvib eigenvectors. These eigenvalues are then converted

into frequencies using the relationship Vi=v*iC where c is the speed of light and v*i =

V-^-j. Finally, the reduced mass, force constants and cartesian displacements are

calculated.

Geometry optimization

Geometry optimization is the procedure for finding the minimum energy

configuration of the given molecule. The procedure calculates the wave function and the

energy at a starting geometry and then keeps on searching a new geometry of a lower

energy. The process is repeated until the lowest energy configuration is found. The

procedure includes calculation of force on each atom by solving the gradient (first

derivative) of energy with respect to atomic positions. Bemy algorithms are used at each

step to select a new geometry for rapid convergence to the required geometry of lowest

energy. In the end at the minimum energy configuration the force on each atom is zero.

However, it may be noted that this procedure will not necessarily find the global

minimum, i.e. the geometry with the lowest energy. It finds a stationary point where

forces at atoms are zero. The above optimization procedure is embodied in the Gaussian

software [110].

The values of variables used in the above described calculation method for

infrared spectrum of Ceo are: the rotational constants in x, y and z axes in the fullerenes

106

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are 0.09, 0.09 and 0.09 (GHz) respectively. Further, Ceo has 300 symmetry adapted basis

functions, 900 primitive gaussians, 300 cartesian basis functions, 180 alpha electrons and

180 beta electrons with the nuclear repulsion energy of 8844.27 Hartree.

The main results after calculation of the Infrared spectrum of Ceo are summarized

below:

1) Ceo has point group symmetry with the irreducible representations from among 174

vibrational degrees of freedom and 46 in numbers are given below:

r,ot = 2Ag + 3Fig + 4F2g + 6Gg +8Hg+Au + 4Fiu + 5F2u+ 6Gu + 7Hu

2) Among the above only the Fiu vibrations have non vanishing dipole moment. Thus,

only four Infrared active modes exist in theCeomoIeculeon account of symmetrical

quadratic basis functions. On the other hand the Raman active modes depend upon Ag and

Hg symmetry only. And therefore, 10 Raman active modes exist in Ceo and the

frequencies which will be different from the four Infrared frequencies of Fiu mode. The

comparison of observed experimental frequency values of Infrared active with the present

results for Ceo is summarized in Table 5.1. Table 5.1 gives comparison of present

calculations of Ceo Infixed shown in column (3) with experimental data of Karctschmer

et al [108] given in column (1). Given in column (2) are the previously calculated

frequencies values for Ceo molecule by Bakowies et al [109] where the semi-empirical

calculation technique, MNDO, was employed for estimating the Infrared spectra. The

results have been scaled down by a factor 0.85 to compensate for overestimation of

frequencies and intensities.

3) It is a known fact that the theoretical based calculations invariably overestimate

frequencies by 10-30% [107] and, therefore, the calculation results do not compare well

with the experimental data. Taking the above fact in mind a scaling factor (0.855) has

been used for the purposes of comparison with experimental data. Therefore, in the

107

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present calculations the predicted frequencies as shown in Table 5.1 as well as in

Figure 5.2 have been scaled down by a factor of 0.855 uniformly across the range.

4) Comparison of Infrared results of earlier calculations for Ceo given in Table 5.1

[108], indicate that the ratio of the experimental frequencies (column -1) to the calculated

frequencies in [109] varies from 0.91 to 0.80 for the two low frequencies 527 and

577 cm'' respectively. On the other hand in the present calculations, the computed

frequency ratio is almost 1 for two frequencies- 577 cm''and 1429 cm"' while for

frequencies 527 cm'' and 1183 cm'' this ratio comes out to be 0.98 and 0.99 respectively.

The chosen scale factor is quite satisfactory.

Table 5.1 Comparison of calculated Infrared spectrum with the experimental spectrum of Ceo

I. Experimental Data (cm'') fref. 1081

527 577 1183 1429

2 Calculated Results (cm'') fref. 1091

491 610 1149 1384

3. Presented Calculated Results (cm'')

536 561 1194 1400

5) The available IR experimental data even for symmefric systems are scarce and

therefore, more theoretical efforts are needed before a full explanation of the individual

spectral lines of each configuration could be properly explained. The fullerene (Ceo)

shows markedly different Infrared spectrum than its derivatives. As shown above only

four IR-active modes exist in the clean and free Ceomolecule. It is found that if the

molecule is part of a crystal then the symmetry is reduced to allow for translational

invariance. Since the molecules reside at lattice sites with Th symmetry a good reference

point group is Th which allows degeneracy only up to three. Hence, the four fold

degenerate G- modes as well as the five fold-degenerate H modes split into modes with

lower degeneracy, amongst others into Fu modes.

108

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(a)

\y-^ Freq^uency

^'

&•

(b)

L ' " ' ' ^ " T A M J

li • 260 • 460 • «dO • 860 " KftW ' 12'00 ' 14to0 ' Frequency

(c)

u 1 . Frcqueney

F/ Mre 5.2 Infrared spectra of (a) experimental data of Ceo fref 108] cnt' (b) calculation ofCeolref 109] cnt' (c) present calculation ofCeocnf'.

109

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Table 5.2 displays results of geometrical parameters of Ceo after optimization

reported by Cardini et al [111] as well of the present calculations. Here C represents a

general carbon atom of Ceo. In Section 2.2.4 it is reported that Ceo possesses 12

pentagonal faces and 20 hexagonal faces. These pentagonal faces and hexagonal faces of

Ceo form (C-C-C) pentagon angles and (C-C-C) hexagon angles in the cage. The bond

lengths and the angles in present work are compared with [111]. The bond lengths of

hexagonal faces vary slightly from bond to bond. It may be seen that the present results

of Ceo are comparable with the reported work [111].

Table 5.2 Structure parameters for Qo

J.

C - C bond length on a pentagon

C - C bond length on a hexagon

Angle (C-C-C) pentagon Angle (C-C-C) hexagon

Dipole moment

2. Calculation Results - Ceo fref. nil

1.47 A

1.41 A

108.0° 120.0°

0

3. Present Calculation - do

1.46 A

1.375 A

107.9-108.0° 119.9-120.0°

0

5.2.2 Infrared Spectra of Oxygen Doped Fullerene (CeoO)

The description and the detailed geometry of CeoO is available in Section 2.2.5.

5.2.2 (a) Structure of CeoO Isomers: CeoO [5,6] and CeoO [6,6]

CeoO has two isomers CeoO [5, 6] and CeoO [6, 6] as shown in Figure 5.3 (a) and

5.3 (b). CeoO [5, 6] has oxygen atom sharing with one hexagon and one pentagon of the

fullerene cage {Figure5.3 (a)) while the other isomer CeoO [6, 6] shares an oxygen atom

with two hexagons (carbon atoms) of fullerene as shown in Figure5.3 (b). The average

bond length of C-C bond of the structure CeoO may be taken to be the same and n

10

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electrons may be assumed to be evenly delocalized all over bonds except those of the

carbon with an oxygen atom.

Figure 5.3 (a) CaoO configurations corresponding to [5, 6J (b) Ct^O [6, 6]. Oxygen atoms are shown in red and grey are carbon atoms.

5.2.2 (b) Calculation Results of Infrared Spectra of Isomers CgoO [5,6] and C6oO [6,6]

In an earlier work of Cardini et al [111] the experimental and result of calculations for IR

spectra have been presented for CeoO molecule without distinguishing between two the

isomers C6oO [5, 6] and C^QO [6, 6]. Later, in Sohn at el [112] two isomers CeoO [5, 6]

and CeoO [6, 6] were reported to exist. Calculations of IR spectra for these two isomers

are carried out and the results are presented here. It was shown that the experimental

results of Cardini et al [111] at 10°K matched better with IR results of CsoO [6, 6] instead

of CeoO [5,6]. The present calculations are performed at the room temperature.

Despite the symmetry of CeoO molecule, the eigenvectors are, in general,

somewhat difficult to visualize. In the present work the equilibrium structural geometry

of C6oO [5, 6] and CeoO [6, 6] were determined through full optimization of geometrical

parameters using the Hartree-Fock Method without any constraint (See Section-5.2.1 (b)

111

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for further detail). The optimized structural parameters of C6oO [5, 6] and CeoO [6, 6] are

given in Table 5.3 and Table 5.4 respectively.

Table 5.3 and Table 5.4 respectively show the results of optimized structure

parameters of C6oO [5, 6] and CeoO [6, 6] as well as previous calculations of Cardini et al

and Sohn et al [111, II2].In Table 5.3 these optimized parameters of calculations of

Cardini et al are given in column (2) and those of Sohn et al for CeoO [5,6] isomer are in

column (3) and column (4) show the present optimized value of CeoO. Similarly, in

Table 5.4, the optimized structure of CeoO [6, 6] isomer are provided in the same order.

Here C represents a general carbon atom while C is the carbon atom bound with the

oxygen atom and C'-O-C is the angle between oxygen atom and its nearest two carbon

atoms. C- C'-C is the angle between the carbon atom (attached with oxygen atom) and its

nearest two carbon atoms. Results of the present calculations are provided for angles C-

C'-C (pentagon), C-C-C (hexagon) and C'-C'-C (hexagon) for CeoO [5, 6] isomer. It may

be seen that results of [111] generally compare with the present results while the results

of [112] do not compare for isomer CeoO [5,6]. The bond lengths of C-C hexagon as well

as C-C pentagon markedly vary for [111] in comparison with the present results. The

angle C'-O-C is quite different (67.7°) in the present calculations in comparison with

[112] (104.2°) while it compares with [111] (65°). Additional geometrical information is

also provided for the present calculation in Table 5.3 which are not available in [111] and

[112].

Table 5.4 gives results of geometrical parameters for CeoO [6, 6] isomer after

optimization the present case and the results of others. It is seen that the results of the

three calculations are comparable. Value of various parameters of the present calculations

such as the angles C-C'-C (pentagon) and C'-C'-C (hexagon) are given which are not

available in [111, 112]. The bond lengths of C-C hexagon and C-C pentagon markedly

112

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vary for [111] in comparison with the present results. The angle C'-O-C (64.6°) in present

calculations is comparable with [111] (65°) and [112] (63.1°). It may be seen that the

Table 5.3 Results of calculation ofCeoO [5, 6]

1.

C - C hexagon C - C pentagon

C-C C-C C'-O

Angle (C'-O-C) Angle (C-C'-C)

pentagon Angle (C-C'-C) hexagon

Angle (C-C'-C) hexagon

Angle (C-C-C) pentagon Angle (C-C-C) hexagon

Dipole moment Basis Set

2. Results of calculation [ref. Ill]

c«,o 1.407-1.479 A 1.407-1.479 A

1.468 A 1.538 A 1.430 A

65° -

--

107.6-108.5° 118.8-121.4°

--

3. Results of calculation [ref. 112]

C6oO [5,61 2.193 A 2.193 A

--

1.390 A 104.2°

-

--

---

6-3IG

4, Present calculation

Results C6«0 [5,6]

1.365-1.441 A 1.375-1.464 A 1.463-1.515 A

1.600 A 1.43616 A

67.7° 105.2°

116.8° 115.8°

107.7-108.9° 118.4-121.4°

1.159D ST0-3G

Table 5.4 Results of calculation ofCioO [6, 6]

1.

C - C hexagon C - C pentagon

C - C C - C C - 0

Angle (C'-O-C) Angle (C-C'-C)

pentagon Angle(C'-C'-C)

hexagon Angle (C-C-C)

pentagon Angle (C-C-C)

hexagon Dipole moment

Basis Set

2 Results of calculation [ref. 111[

CMO 1.407-1.479 A 1.407-1.479 A

1.468 A 1.538 A 1.430 A

65° -

-

107.6 - 108.5°

118.8-121.4°

--

3. Results of calculation [ref. 112]

C«,0 16,61 1.511 A 1.511 A

--

1.447 A 63.1°

-

-

-

-

-6-31G

4. Present calculation Results

C«oO r6,61 1.366-1.379 A 1.450-1.492 A 1.509-1.509A

1.533 A 1.434 A 64.6° 105.7°

117.0°

107.4-108.9°

120.0-121.7°

1.159D ST0-3G

113

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present results of pentagon and hexagons angles for CeoO [5, 6] and CeoO [6, 6] compare

very well with the results of [ 111 ].

The Infrared spectra for the two isomers CeoO [5, 6] and CeoO [6, 6] are given in

Figures 5.4 (a, b and c). Figure 5.4(a) gives experimental IR spectrum of [111]. Figures

5.4 (b) and (c) are the results of present calculations of IR spectrum of CeoO [5, 6] and

CeoO [6, 6] respectively. The calculations were performed with the help of Gaussian

program package [110]. The variables used in the calculations of Infrared of CeoO by the

Gaussian program package are: the rotational constants used in x, y and z directions in the

fullerenes derivative (CeoO) are 0.09, 0.08 and 0.08 (GHz) respectively, the CeoO has 305

symmetry adapted basis functions, 915 primitive gaussians, 305 cartesian basis functions,

184 alpha electrons and 184 beta electrons with the nuclear repulsion energy of 9190.52

Hartree.

The most significant change in the Infrared spectrum induced by the addition of

oxygen in fiillerene is the redistribution of the Infrared intensity among the normal modes

as shown in the Table 5.5, Starting with 183 total degrees of freedom for an isolated CeoO

molecule and subtracting six degrees of freedom corresponding to three translations and

three rotations, results in 177 vibration degrees of freedom. Although the two fuUerene

derivatives CeoO [5, 6] and CeoO [6, 6] have the same numbers of 177 degrees of freedom

yet they exhibit different specfra.

Following conclusions may be drawn from the results of the Infrared calculations

carried out for the CeoO [5,6] and CeoO [6, 6]:

1) The Ab-initio method used for calculation [11, 26, 56] overestimates Infrared

intensities. Thus all the calculated Infrared intensities may show some error when

compared with the available experimental data as seen eariier in Section 5.2.1 (b). See

also [109]. In the present case the calculated frequencies for CeoO have been scaled down

114

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by a factor 0.855 uniformly throughout the range and compared with the available

experimental data at room temperature given in Table 5.5.

2) The experimental spectrum of CeoO [111] in Figure 5.4(a) and Table 5.5 suggest

that there are 17 major peaks and the rest of the peaks are weak. The experimental

spectrum of CeoO in Figure 5.4(a) can be divided into four ranges of frequencies: 200-

600 cm'', 600-800 cm'', 800-1200 cm'' and 1200-1505 cm'' and the results may be

analyzed in each range separately.

3) The Infrared spectrum of QoO is calculated in between the range of frequencies 240

- 1650 cm'. The minimum calculated peak for CeoO [5,6] is obtained at 248 cm"' and for

CeoO [6, 6] 257 cm'as seen in Figures 5.4 and Table 5.5.

4) Figures 5.4 show that several peaks that are observed in both isomers of CeoO

compare satisfactorily with the available experimental data [111] e.g. 299, 496, 564, 744,

761 and 1206 cm"'etc.

5) There are several Ab-initio and Semi-Empirical studies suggesting that CeoO [5, 6]

isomer is slightly more stable than CeoO [6, 6] [143-146] and rearrangement between the

two isomers involves two transition intermediate states corresponding to local minimum

[144-146] from CeoO [6,6] isomer to CeoO [5,6] isomer or vice versa.

6) The reduced symmetry of the fuUerene derivatives split the degenerate vibrations of

C6oO to a large extent. This splitting adds to vibrations which are produced by

intermolecular interactions in the crystal. Thus the Infrared intensity among various

splitting components is not uniformly distributed. Moreover, in some cases the intensity is

concentrated in a single component.

7) It may be seen that all the normal modes of the fullerene cage become active in the

epoxide in comparison with Cwand there is full removal of degeneracy.

115

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4^0 660 gjo lik^ 12"00 14(K) Frequency

Figure 5.4 Infrared spectra of (a) QoO experimental data [ref. HI] cm'^ (b) present calculation ofCgoO/S, 6J (c) present calculation of QoO [6, 6J.

16

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8) The epoxide group can be considered as a small local perturbation of the fullerene

cage. The frequencies of the cage exhibit a small frequency shift towards blue. This shift

can be at lower or higher frequencies in the two isomers of CgoO as observed depending

on the normal mode.

9) There are many additional normal modes of the epoxide that are calculated at

different frequencies which are supposed to be due to involvement of the largest

displacement of oxygen atom. These modes are appreciably lower than the characteristic

frequencies of an epoxide group.

10) It is worth noting that the intensity of the Infi'ared-active fundamentals of Ceo

decreases appreciably in the fullerene derivative (CeoO) in each isomer and it is found that

most of the bands inactive in Ceo become Infrared active in C oO. In some regions of the

calculated spectrum, the overall intensity decreases to an extent that the bands become

barely detectable for comparison with the available experimental data.

11) Figure 5.4 and Table 5,5show the highest peak to occur at 521 cm''in experimental

spectiiim [111] in the range between 200-600 cm''and has correctly been predicted in

both of the isomers of CeoO-The predicted peak at 521 cm"'of QoO is overestimated at

530 cm'' in both spectra [5, 6] and CeoO [6,6].A weak peak at 299 cm'Hs well predicted

here for isomer [5,6] as shown in Table 5.5.

12) Shown in Figure 5.4 and Table 5.5are comparison in the range of 600- 1200 cm"\

Thirteen (13) significant IR experimental peaks appear between 600 - 800 cm'' which are

clearly seen in the calculated results of CeoO [5, 6]. From a detailed examination of

Figure 5.4 and Table 5.5, it may be seen that a peak at 1179 cm"'in the range 800-

1200cm''is seen and is presently overestimated at 1188 cm''for both isomers.

17

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Table -5.5 Infrared spectrum ofdoO

1 Frequency

248 257 265 274 282 291 299 308 316 325 333 342 351 359 368 376 385 393 402 410 419 428 436 445 453 462 470 479 487 496 504 513 522 530 539 547 556 564 573 581 590 599 607 616 624 633 641 650 658 667

Intensity IS, 61

0.1 O.I 0.1 0.1 0.1 0.4 2.2 0.8 0.3 0.5 0.5 0.3 0.3 0.5 0.3 0.2 0.7 0.4 0,6 0.9 1

0.6 0.5 0.7 1.4 1.6 0.9 1.2 2

2.9 3

4.4 13J 58.9 29.1 9.6 4.8 2.9 2.3 2.9 1.5 1.1 3.1 1.6 0.9 0.5 0.5 0.5 1.1 1.8

Intensity 16,61

0.1 0.1 0.2 0.6 3.4 1.1 0.3 0.1 0.2 0.1 0.1 0.2 0.1 0.1 0.1 0.1 0.2 0.3 1.2 0.7 0.5 0.9-0.4 0.4 0.4 0.6 0.9 1.5 3.9 2.6 3.8 9.4

47.3 47 13.6 5.2 3.3 2.6 3.2 1.1 0.6 0.5 0.5 0.8 0.3 0.2 0.2 0.3 0.3

Experimental data*

------

299 ----------------------

495 -

• -

521 ----

564 --

590 --

616 -

631 --. -

Frequency

675 684 693 701 710 718 727 735 744 752 761 770 778 787 795 804 812 821 829 838 846 855 864 872 881 889 898 906 915 923 932 941 949 958 966 975 983 992 1000 1009 1017 1026 1035 1043 1052 1060 1069 1077 1086 1094

Intensity 15,61

1.6 1.4 2.6 11.2 4.4 2.1 1.7 3.2 7.2 14.2 10.5 12.3 14.4 14.9 18.3 4.1 2.2 1

0.7 0.4 0.3 0.3 0.2 0.2 0.2 0.2 0.2 0.3 0.8 0.6 0.6 1.7 1.1 1.9 0.4 0.2 0.2 0.2 1

0.8 OJ 0.2 0.5 0.6 0.2 0.3 0.9 0.5 0.5 1.3

Intensity (6,61

0.2 0.5 0.3 0.2 0.3 0.2 0.1 0.2 0.3 0.7 0.8 1.6 1.3 1.7 4.7 3.7 1 1

0.5 0.3 0.2 0.1 0.1 0.2 0.3 1.1 0.6 1.3 2.8 1.9 7.4 2

2.7 1.9 0.5 0.2 0.2 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.2 0.2 0.1 0.2 0.3 0.5

Experimental data* 675

----

718 --

742 -

760 770

--

795 . . . --. -

862 -----------------

1017 -------

1085 -

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Tables. 5 Continued

Frequency

1103 1112 1120 1129 1137 1146 1154 1163 1171 1180 1188 1197 1206 1214 1223 1231 1240 1248 1257 1265 1274 1283 1291 1300

Intensity 15,61

3 1

0.8 1.2 2

0.9 1

1.4 2.9 83 39.3 11 5.2 3.1 5.1 4.2 5.5 73 4.5 2.4 3.4 2.9 1.9 2.1

Intensity [6.61

0.5 0,7 0.4 0.4 0.6 0.9 1.8 5.2 3.4 7.3 36.4 27.6 9.7 25.8 7.5 5.9 2.9 1.5 1.2 2.9 13 1

0.8 0.6

Experimental data*

. -. -. • -

1160 -

1179 --

1206 -

1220 -

1240 1248

---

1283 --

Frequency

1308 1317 1325 1334 1342 1351 1359 1368 1377 1385 1394 1402 1411 1419 1428 1436 1445 1454 1462 1471 1479 1488 1496 1505

Intensity 15,61

4.5 1.4 0.8 1,2 1.1 2

33 2.2 2.4 7.5 11.2 17.1 113

8 5.7 8.6 4.1 2.3 1.4 0.8 0.6 1.6 2

1.2

Intensity 16,61

0.7 0.9 0.4 03 03 0.4 0.8 1

1.1 2.9 10.7 14 3.4 2.4 2.5 1.9 0.7 0.7 2.7 0.9 0.3 0.2 0.1 0.1

Experimental data*

1308 ---

1343 --

1370 ---

1400 --

un ---

1461 ----

1505

Experimental data of Cardini et al [111].

13) The number of peaks observed in CeoO [111] in the range 1200 to 1505 cm at

room temperature are 12 in numbers. In this range two predicted at peaks at 1206 and

1220 cm'' match with the experimental values for CeoO [6, 6] than [5, 6] as shown in

Figure 5.4 and Table 5.5. The predicted peak in the present case at 1206 cm'' is

overestimated at 1214 cm''. Rest of the peaks in experiment in this range appear with

greater intensities in CgoO [5, 6] than in C6oO [6, 6] as shown in Figure 5.4 and

Table 5.5.

14) Sohn at el [112] found that IR of CeoO [6, 6] is better predicted when compared

with the experimental values at 10° K temperature than CeoO [5, 6] while the present IR

results of C6oO [5, 6] show greater similarity with the measured IR spectrum fill] than

CeoO [6, 6] at the room temperature.

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15) It has been observed [111,112] that by changing temperature from lower to higher

produces a more abrupt and substantial change in the Infrared band shapes. This change

can be taken as evidence for the occurrence of a phase transition from a low-temperature

ordered to a high-temperature orientationally disordered structure. The phase transition

has already been reported at 278° K in CMO [111,112].

16) From the present results of IR for CeoO [5, 6] and CeoO [6, 6] isomers, it may be

concluded that IR spectra of CgoO are quite sensitive to temperature and at room

temperatui-e isomer CeoO [5, 6] is more stable which is indicated by the experiments

[155-158] as well as by the present study.

5.2.3 Bromine Doped Fullerene

5.2.3 (a) Structure of CeoBr

Six Br atoms are attached to six carbon atoms on the fullerene shell through a single

radial covalent bond (length 2.07A) by sharing one electron from the carbon atom of

ftillerene and the other by the Br atom [193]. Detailed geometry of CeoBre has been

provided in Section 2.2.6. Possible structure of CeoBre in which six isolated Br atoms are

attached to one of the carbon atoms on a pentagonal ring on the Ceo shell, with one Br per

pyracylene unit is shown in FigureS.S. All calculations pertaining to IR spectrum of

CeoBregiven below were performed with the Gaussian program package [110].

Figure 5.5 Bromine doped fullerene C^r6

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5.2.3 (b) Infrared Spectrum of Bromine Doped Fullerene

It should be noted that the experimental results as well as calculations of IR of CeoBre are

scarcely available in the literature. The present predictions of Infrared spectrum of CeoBre

are given below. Gaussian prediction procedure along with the Hartree-Fock method is

again used here. This method has already been validated in the previous Sections 5.2.1

and 5.2.2. Table 5.6 shows results of optimized structure of CeoBrg molecule and the

notations used are explained below. C again represents a general carbon atom of Ceo cage

and the carbon atoms that are bonded with the bromine atom in CgoBre are represented by

C". The optimized structure of doETt has 20 hexagons and 12 pentagons (details of

C6oBr6 may be found in Section 2.2.6).It is found that the bond lengths of C-C hexagon as

well as C-C pentagon in the cage of CeoBr* do not markedly vary from one another after

optimization. The optimized angles of 20 hexagons and 12 pentagons faces are given in

Table 5.6.

CeoBre has C\ symmetry and has 192 degrees of freedom that includes normal

degrees of freedom for Ceoand additional 18 for six bromine atoms. The important

parameters chosen for the Gaussian program package [110] for calculation of IR of

CeoBreare: the rotational constants of CeoBre in x, y and z axes of the fuUerenes derivative

are 0.04, 0.03 and 0.03 (GHz) respectively. The CaoBre structure has 408 symmetry

adapted basis functions, 1242 primitive gaussians, 414 cartesian basis functions, 285

alpha electrons and 285 beta electrons with the nuclear repulsion energy of 18390.92

Hartree.

The calculations of IR of CeoBre took 12 steps to converge after optimization. The

predicted results for IR spectrum of CaoBre are given in Figure 5.6 and on Table 5.7.

Following conclusions may be drawn from the results.

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Table 5.6 Structure Parameters ofCioBrt

1. C - C hexagon C - C pentagon

C" - Br Angle (C-C-C)

pentagon Angle (C-C-C)

hexagon Dipole moment

Basis Set

1.348-1.350 A 1.348-1.351 A

2.076A 107.9-108.1°

120.0°

5.571D ST0-3G

1) There are 25 significant peaks in the IR of CeoBre from 0 to 1530 cm"' as shown in

Figure 5.6 and Table 5.7.

2) The bending vibrations of C-Br atoms are seen in the range of 60-170cm''.

3) Carbon-bromine stretching vibrations are found in the range of 150-900 cm'' and

combine powerfully with the radial vibrations of the carbon cage.

4) It should be noted that the carbon atoms do not contribute in the low-frequency

modes, whereas above 250-300 cm'' frequency the vibrations are in turn localized mostly

on the carbon skeleton of the molecules without significant displacements of bromine

atoms.

5) The intense IR of CeoBrainside 550-620 cm'' region originates from radial motions

of carbon skeleton with partially localized bromine fragments of CeoBre molecule.

6) The medium IR spectrum of C6oBr6in the 700-800 cm'' region is due to vibration of

the un-substituted fragments of bromine molecule.

7) The strong IR lines observed in 750-850 cm'' region is caused by the deformations

due to carbon- carbon atoms and carbon-bromine atoms.

8) It is further seen that the stretching vibrations of C-C atoms fall into 1000-1530 cm"'

interval of the spectrum.

122

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9) The deformation of Infrared peaks among carbon -bromine atoms and among the

carbon - carbon atoms of CooBre structure occur around 1000-1200 cm"' and 1200-1400

cm''respectivelyand are seen with low intensity.

0 200 400 ' 6 0 0 ' 800 ' 1000 ' 1200 1400 Frequency

Figure 5.6 Infrared spectrum ofCsoBre

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Table 5.7 Infrared spectrum ofCmBr^

Frequency 34 43 51 60 68 11 86 94 103 111 120 128 137 145 154 162 171 180 188 197 205 214 222 231 239 248 257 265 274 282 291 299 308 316 325 333 342 351 359 368 376 385 393 402

Intensity 1 1 2 6 9 2 1 1 0 1 1 3 2 8 3 8 4 1 2 1 1 2 5 2 4 3 3 4 8 27 26 12 4 3 6 21 1! 15 54 53 15 14 15 15

Frequency 410 419 428 436 445 453 462 470 479 487 496 504 513 522 530 539 547 556 564 573 581 590 599 607 616 624 633 641 650 658 667 675 684 693 701 710 718 727 735 744 752 761 770 778

Intensity 18 16 24 51 15 15 6 6 5 12 13 28 41 12 5 4 7 7 3 3 5 8 5 6 17 23 9 5 10 15 11 10 15 7 8 3 2 4 13 15 7 4 11 12

Frequency 787 795 804 812 821 829 838 846 855 864 872 881 889 898 906 915 923 932 941 949 958 966 975 983 992 1000 1009 1017 1026 1035 1043 1052 1060 1069 1077 1086 1094 1103 1112 1120 1129 1137 1146 1154

Intensity 10 8 2 1 1 1 1 1 1 1 1 2 5 13 11 2 1 -----------------•

-

1 3 5 2 1 1 1 1

Frequency 1163 1171 1180 1188 1197 1206 1214 1223 1231 1240 1248 1257 1265 1274 1283 1291 1300 1308 1317 1325 1334 1342 1351 1359 1368 1377 1385 1394 1402 1411 1419 1428 1436 1445 1454 1462 1471 1479 1488 1496 1505 1513 1530 -

Intensity 4 19 6 3 1 1 ---

1 1 1 1 2 3 6 22 66 39 19 7 10 4 2 2 3 8 37 17 25 33 22 8 4 7 14 5 8 16 44 23 7 5 -

124

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Chapter-6; Prediction of Raman Spectra of Cfin and Its Derivatives

6.1 Introduction

Raman spectroscopy is the study of inelastic scattering of laser light from a

sample. Photons excite or absorb optical phonons of the sample. The incident frequency

gets shifted con-esponding to the allowed phonon modes in the sampled material after

interaction with the sample. Detailed description of Raman spectroscopy is provided in

Chapter-3.2.

Raman scattering is divided into two categories according to the interaction with

the sample by gaining or losing the energy corresponding to the frequency shift. The

process through which the incident photon's energy is partly used to create a phonon and

the resulting photon has a lowered frequency is called a Stokes process. While if, the

exiting phonon has a higher frequency than the incident initial photon as a consequence of

absorbing energy from a photon, the process is called anti-Stokes. Raman spectra are

qualitatively identical in Stokes and anti-Stokes components but the anti-Stokes

intensities are lower than Stokes intensities.

One can study Raman spectra of those molecules only which have permanent

polarization or have an effect on its polarization. The molecule which has permanent

polarization or has an effect on its polarization when interact with the photons is called a

Raman active molecule and the vibration mode of such a molecule is called as Raman

active vibrational mode of the molecule. The outgoing photons reflect the modification of

the molecule's optical response (during the interaction) in the form of vibrations. A

Raman active vibrational mode mechanically deforms a molecule by varying distances

between the atoms and the constant modulation of the molecule polarizability varies with

the given frequency. All Raman calculations are carried out in the manner by which IR

125

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calculations were done in Chapter-5 using Gaussian program package [110].The results of

the calculations of Raman are reported in the Section 6.2.

In the present Chapter-6, predicted Raman spectra of fullerene and some of its

derivatives are presented. The methodology for determination of Raman spectra has

already been explained in Section 3.2. Three different structural configurations are

studied here: Ceo; CeoO; and CeoBre and the Raman spectra of these structures have been

calculated and presented. It may be noticed that each nanostructure has a single Raman

spectrum except for CeoO which has two spectra as it has two isomers.

6.2 Raman Spectra - Calculations and Results

In this Section 6.2 the Raman spectra of Ceoand its derivatives have been calculated.

6.2.1 (a) Fullerene (CM)

Figure 6.1 Pure fullerene CM with 60 carbon atoms.

The configuration of Ceoas shown in Figure 6.1 has been explained in Section

5.2.1 and is employed here and for determination of Raman spectrum.

126

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6.2.1 (b) Results of Ceo Raman Spectrum

(i) Icossahedron Symmetry for Ceo

The details of Icossahedron Symmetry of Ceoarehas been provided earlier in Section

5.2.1.

(ii) Numerical Calculation

The method of calculation of Raman spectrum has been explained in Section 3.2.

Calculations aie performed with the Gaussian program package [110] (See Section-5.2.1

(b) for further details). The variables used in the present work for calculation of Raman

spectrum using Gaussian program package [110] are: the rotational constants in x, y and z

axes in the fullerenes are 0.09, 0.09 and 0.09 (GHz) respectively. Ceo has 300 symmetry

adapted basis functions, 900 primitive gaussians, 300 cartesian basis functions, 180 alpha

electrons and 180 beta electrons with the nuclear repulsion energy of 8844.27 Hartree.

Optimization of Ceo is done before proceeding with the calculation of Raman spectrum.

The results of calculations of Raman Spectrum for Ceoare displayed in Figure 6.2 (b) and

in Table 6.1. Figure 6.2 (a) shows results of experiment of [120].

The numerical results of Ceo Raman spectrum are summarized below:

1) The same optimized parameters for Ceoas given earlier in Table 5.2 have been used

for the present calculations also.

2) Ceo has point group and the irreducible representations for the 174 vibrational

degrees of freedom are given as:

r,o, = 2Ag + 3Fig 4- 4F2g + 6Gg +8Hg+Au + 4Fiu + 5F2u + 6Gu + 7Hu

3) The Raman active modes of Ceo have Ag and Hg symmetry (corresponding to the

basis functions for all symmetrical quadratic forms while the anti-symmetric Fig does not

127

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contribute to the Raman scattering) among its irreducible representation. It may be seen

from (2) above that there are 10 Raman active modes.

4) Table 6.1 gives comparison of experimental results of Ceo Raman spectrum of [120]

given in column (2), the calculated spectrum performed in Beu et al [113] placed in

column (3) and the present calculations shown in column (4). The calculated frequency

values in column (3) where the non-orthogonal Tight Binding Molecular Dynamics was

employed for estimating the Raman spectrum of Cao, the results were scaled down by a

factor 0.95 to compensate for overestimation of frequencies. The ratio of experimental

frequencies to the calculated values of [113] is given in column (5) in Table 6.1. The ratio

used in the present calculations is displayed in column (6). It may be seen that for a

number of frequencies the present results match with the experimental value with the

value of the ratio equal to 1.0.

5) It was observed earlier in Section 5.2 that the theoretical calculation techniques

invariably overestimate frequencies by 10-30% [107], and therefore, the calculation

results do not compare well. A scaling factor (0.855) is used here for the purpose of

comparison of the present results of calculations with the experimental data. The same

scaling factor was also used earlier in the case of calculation of the Infrared specfra (see

Section 5.2). In the present calculations the predicted frequencies shown in column (4) in

Table 6.1 as well as in Figure 6.2 have been scaled down by a factor of 0.855 uniformly

across the range.

6) It is seen in Table 6.1 that the present results in column (4) compare well with the

experimental data of [120] shown in column (2). The predicted results are better than the

calculation of Beu et al [113] shown in column (3).

128

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c

(a)

520(S) -»

lii9A„

^ ' w,». m "2 •;;' - > — I — > — r — ' — r _^.^.™„.^ -,- I I " I — ' — J — . , - , ,

0 200 400 600 800 1000 1200 1400 1600 1800 4001-1

350

300H

zso

150-

100-

50

0

(b)

. X X * ^ ^ l • I ^ ' ^ > ML. I ' ' • — I ' " '• I"

200 400 600 800 1000 1200 1400 1600 1800

Frequency

Figure 6.2 Raman Spectra of (a) Ceo experimental data [ref. 120] cm'' (b) present predictions

Table 6.1 Comparison of calculated Raman spectra with the experimental data for do

1. Mode

H.(l)

H„(2)

A.(l) H.(3)

H.(4)

H.(5)

H.(6)

H.(7)

A.{2)

H.(8)

2 Experimental Results (cm'')

[ref 120]

270

431

493 708

773 1099

1248

1426

1469

1573

3. Calculated

Results (cm-')

lref.113]

280

447

530

769

820

1205

1288

1516

1548

1610

4. Present

Calculation Results (cm-')

151

436

470 718

761 1094

1248

1436

1462

1633

5. Experimental

value/Calculated Result [ref.lB]

0.96

0.96

0.93

0.92

0.94

0.91

0.96

0.94

0.94

0.97

6. Ejqyerlmental value / Present Calculations

1

0.98

1

0.98

1

1

1

0.99

1

0.96

129

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6.2.2 Raman Spectra of Oxygen Doped Fulleiene (CeoO)

6.2.2(a) Structure of CeoO Isomers:

The structures of CeoO as shown in Figure 5.2and explained earlier in Section

5.2.2(a) is used here again for the prediction of the Raman spectra.

6.2.2(b) Raman Spectra of CeoO [5,6) and CsoO [6,6]

Calculations were performed with the help of Gaussian program package [110].

The values of variables used in the calculations for the Gaussian program package are: the

rotational constants in x, y and z axes in the CeoO [5, 6] and CeoO [6, 6] are 0.09, 0.08

and 0.08 (GHz) respectively. The CeoO [5, 6] and CeoO [6, 6] have same number of 305

basis functions, 915 primitive gaussians, 305 cartesian basis functions, 184 alpha

electrons and 184 beta except electrons with the nuclear repulsion energy as 9191.80

Hartree for CeoO [5, 6] and is 9190.52 Hartree in the case of CeoO [6, 6]. The numerical

results converged after 17 cycles and 15 cycles with density matrix = 0.6764D-08 and

density matrix = 0.5915D-08 for C6oO [5,6] and [6,6] respectively.

In the present studies prediction of Raman spectra of CeoO are performed and the

1 esults are discussed below. It should be noted that the method employed for calculation

of Ceo spectrum provided in Section 6.2.1 is also used here and the results have again

been scaled down by a factor 0.855 to compensate for the overestimation of frequencies.

The results of calculations of Raman Spectrum for CgoO [5,6] and [6, 6] are displayed in

Figure 6.3(a)-(b) and in Table 6.2-6J.¥o\lowmg are the conclusions drawn from the

calculation results of Raman spectra of CeoO:

1) The Infrared optimized structural parameters of CeoO provided in Table 5.2.2 are

used in carrying out the calculations of Raman spectra for CeoO.

2) Notable changes in the Raman spectra are seen by addition of oxygen atom in Ceo

when compared with the Raman spectra of CeoO shown in Figure 6.3. It may be seen that

130

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only 10 Raman peaks are predicted in the spectrum of C(,o while a large number of peaks

are seen in the spectra of CeoO by addition of an oxygen atom to Ceo. The redistribution in

the two cases of CeoO [5, 6] and [6, 6] of the Raman intensity is given in Tables 6.2 - 6.3

and in Figure 6.3(a)-(b).

3) 14 major Raman peaks in addition to certain weak peaks are seen in CeoO [5, 6]

while 11 major Raman peaks with weak peaks are observed in CeoO [6, 6] in Tables 6.2 -

6.3 and Figure 6.3 (a)-(b).

4) The spectra of CeoO [5, 6] and [6, 6] may be divided into four regions: 200 - 600

cm''; 600 -1000 cm"'; 1000 -1400cm'' and; 1400 -1701 cm''.

5) The highest intensity in the case of [5, 6] and [6, 6] are found in the range 1400 -

] 701 cm'' and the lowest intensity in 600 -1000 cm"' range.

6) Between the frequency range 200 - 600 cm'' each spectrum has 3 significant peaks.

The first two peaks in the case of CeoO [5, 6] occur at 257 cm'', 453 cm'' and in the case

of [6,6] at 257 cm"', 436 cm"' frequencies. The third significant peak at 479 cm'' appears

for [5,6] while for case of [6,6] it is seen at the frequency 462 cm''.

7) Each spectrum of [5, 6] and [6, 6] in the range 600 - 1000 cm'' has two significant

peaks. In case of [5, 6] at the frequencies 710 cm"', 761cm'' and for [6, 6] at 718 cm'',

761 cm"' with [5,6] having higher intensities than [6,6].

8) Five major Raman lines are seen for [5,6] while only two lines for [6,6] are found in

the frequency range 1000 - 1400 cm"'. The first-three and fifth (at 1094 cm'', 1180 cm"',

1257 cm'' and 1394 cm"') Raman lines for [5, 6] show high intensities. However, the

fourth Raman line (1342 cm"') appears with lower intensity for [5, 6]. On the other hand

the Raman lines for [6, 6] at 1103 cm"' and 1274 cm"' appear with higher intensities than

those of [5, 6].

131

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650'

500

460

400

350

300'

250

200

ISO'

100

50

0

SOOi

400^

950

30O

250

150

100

SUA

(a)

, ,A,. fJ\^ , pT^ , ^•—T— fT 200 400 600 800 tOOO 1200 1400 1600

(b)

<mmi\ III^|\||» I if/Sm. J.(A.I|»iii/,ilftdflCiiiii|>Cjllll.^WWI|Jl^i

aoo m 600 soo looo 1200 t40o leoo Frequency

Figure 6.3 Raman spectrum of (a) CsoOfS, 6] (b) CeoO [6, 6],

132

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Table 6.2 Raman Spectrum ofCioO [5, 6]

Frequency 171 180 188 197 205 214 222 231 239 248 257 265 274 282 291 299 308 316 325 333 342 351 359 368 376 385 393 402 410 419 428 436 445 453 462 470 479 487 496 504 513 522 530 539 547

Intensity 0.2 0.2 0.3 0.4 0.5 0.7 1,2 2.4 6.7 31.6 34.5 10.7 3.2 1.5 1 1 0.7 0.7 2 1 0.6 0.5 0.7 0.5 0.5 1.4 0.9 1.3 2.2 5.9 5.6 4.3 9.2 27.3 9.5 16.7 23.1 6.1 4.7 3.1 1.3 1.1 2.1 2.1 4.3

Frequency 556 564 573 581 590 599 607 616 624 633 641 650 658 667 675 684 693 701 710 718 727 735 744 752 761

no 778 787 795 804 812 821 829 838 846 855 864 872 881 889 898 906 915 923 932

Intensity 1.6 0.7 0.5 0.7 0.5 0.4 1.3 0.5 0.3 0.2 0.2 0.3 0.6 1 1.2 1.1 1.7 6.4 8.4 4.9 2.5 3.5 7.6 14.5 15.3 12.5 10 8.9 8.6 2.1 1 0.7 0.5 0.3 0.2 0.2 0.2 0.2 0.2 0.3 0.7 0.5 1.6 2.2 5.1

Frequency 941 949 958 966 975 983 992 1000 1009 1017 1026 1035 1043 1052 1060 1069 1077 1086 1094 1103 1112 1120 1129 1137 1146 1154 1163 1171 1180 1188 1197 1206 1214 1223 1231 1240 1248 1257 1265 1274 1283 1291 1300 1308 1317

Intensity 3.6 1.2 0.9 0.4 0.3 0.3 0.4 1.1 1.3 0.7 0.7 1.8 2.4 1.3 2 6.6 4.9 7.9 38.9 26.9 7.2 5.4 7.8 6 2.6 2.5 4.3 14 43.6 10.7 5.1 2.7 2.6 4.3 4.7 8

15.3 50.5 37.6 79 38.8 20.5 16.5 17.8 6.6

Frequency 1325 1334 1342 1351 1359 1368 1377 1385 1394 1402 1411 1419 1428 1436 1445 1454 1462 1471 1479 1488 1496 1505 1513 1522 1530 1539 1548 1556 1565 1573 1582 1590 1599 1607 1616 1625 1633 1642 1650 1659 1667 1676 1684 1693 1701

Intensity 5.1 10.3 15.4 7.9 11 8.8 9.7 22.6 35.8 111 40 55.4 189.9 466 87.4 35.7 39.7 22.1 10.7 13.7 20 13.5 5.1 3.6 3.3 4.5 8.4 10.2 5.3 6.1 12.1 51.1 50.2 25.8 51 47 130.3 57.5 20.4 7.1 3.8 2.4 1.7 1.3 1

133

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Table 6.3 Raman Spectrum ofC6oO[6, 6]

Frequency 171 180 188 197 205 214 222 231 239 248 257 265 274 282 291 299 308 316 325 333 342 351 359 368 376 385 393 402 410 419 428 436 445 453 462 470 479 487 496 504 513 522 530 539 547

Intensity 0.2 0.2 0.3 0.3 0.5 0.7 1.1 2 5.1 24.4 31 12.3 3.4 1.7 2 I 0.6 0.4 0.5 0.4 0.6 0.7 0.4 0.3 0.3 0.4 0.6 0.8 1.7 3.2 5.3 8.7 4.4 9.2 50.1 21.7 7.2 4.6 1.7 1 0.7

[ 0.5 0.6 1.4 1.1

Frequency 556 564 573 581 590 599 607 616 624 633 641 650 658 667 675 684 693 701 710 718 111 735 744 752 761 770 778

' 787 795 804 812 821 829 838 846 855 864 872 881 889 898 906 915 923 932

Intensity 0.7 0.3 0.2 0.2 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.2 0.4 0.3 0.4 1.3 0.9 1.3 5.1 6.1 1.8 2.3 6.5 10.4 12.3 6.6 3.7 3.1 3.8 2.5 0.8 0.6 0.5 0.3 0.2 0.2 0.2 0.2 0.2 0.3 0.5 1.4 3 2.9 12.8

Frequency 941 949 958 966 975 983 992 1000 1009 1017 1026 1035 1043 1052 1060 1069 1077 1086 1094 1103 1112 1120 1129 1137 1146 1154 1163 1171 1180 1188 1197 1206 1214 1223 1231 1240 1248 1257 1265 1274 1283 1291 1300 1308 1317

Intensity 3 2,4 0.8 0.4 0.3 0.2 0.2 0.2 0.3 0.4 1.4 1 0.5 0.7 0.9 1.3 2.6 8.4 20.4 28.3 17.3 13.2 3.4 1.8 1.4 1.9 6.1 1.8 1.1 1.2 1.5 2.1 6.4 3.2 4.9 6.2 20.5 29 45.3 48.1 34 11.8 8.5 6.3 5.6

Frequency 1325 1334 1342 1351 1359 1368 1377 1385 1394 1402 1411 1419 1428 1436 1445 1454 1462 1471 1479 1488 1496 1505 1513 1522 1530 1539 1548 1556 1565 1573 1582 1590 1599 1607 1616 1625 1633 1642 1650 1659 1667 1676 1684 1693 1701

Intensity 3.4 2.5 2.5 3 5.8 4.8 5.1 8

11.2 29.2 30.2 67.9 268 284.1 123.7 43.5 78.2 32.1 11.6 6.7 4.6 3.5 3.3 3.4 2.5 3.8 2.5 2.3 2 2.1 2.4 3.3 5.1 10.6 40 43.9 151.1 62 17.8 6.9 3.7 2.4 1.6 1.2 0.9

134

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9) Four significant lines are seen for [5, 6] in the range of frequencies of 1400-1701

cm"' (1436 cm'', 1496 cm"', 1590 cm'' and 1633 cm"'). The strongest line appeared at

1436 cm''. In addition to the above another smaller line is observed at 1633 cm" and the

rest two lines are of high intensities for [5, 6]. For CeoO [6, 6] three significant Raman

lines are seen at 1436 cm'', 1462 cm''and 1633 cm"'. All these lines are of high intensity

with the line at 1436 cm"'being the strongest among these three. It should be noted that

the two lines at 1436 cm'' and 1633 cm'' are found in the both spectra. Between these two

lines, the line at 1436 cm"' for [5, 6] is stronger than CeoO [6, 6] while at 1633 cm'' the

line for [6,6] has higher intensity than [5, 6].

6.2.3 Bromine Doped Fullerene

The structure of CeoBre shown in Figure 5.5 and explained in Section 5.2.3 is

used therefore prediction of Raman spectrum. The results of calculations are given below.

6.2.3(a) Structural configuration - CmBri

The calculations are performed with the help of Gaussian program package [110].

In the first step the structure of CeoBre is optimized. The optimized parameters obtained

earlier for the calculation of IR of CeoBreare given in Table5.6a.nd the same have again

been used for calculations of Raman spectrum. Other details are available in Section

5.2.3.

The parameters given below are used for calculation of RamanforCeoBreusing the

Gaussian program package [110]. The rotational constants in x, y and z axes for the

fullerenes derivatives (CsoBre) are 0.04,0.03 and 0.03 (GHz) respectively. The CeoBr^ has

408 basis functions, 1242 primitive gaussians, 414 cartesian basis functions, 285 alpha

electrons and 285 beta electrons with the nuclear repulsion energy of 18390.92 Hartree.

135

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a

0 2( )0 400 eon

Up) kj,a,A... .n «iii

ROO 1000 1200 1400

w

LA

1600

800 1000 1200 1400 1600

Frequency

Figure 6.4 Raman spectrum of CeoBre (a) experimental data fref. 153] cm (b) calculated result (ref. 153] cm'' (c) experimental data [ref. 154] cm'' (d) present calculations.

5) In the range 0 - 200 cm" weak Raman lines observed in the spectra show the

bending vibrations of C-Br.

6) High intensity Raman peaks appear between 200 - 600 cm''range of frequencies due

to carbon-bromine stretching vibrations. These vibrations of C-Br in CeoBre are mixed

with the radial vibrations of the ftillerene cage. Strong Raman lines in CeoBre due to radial

motions of carbon skeleton are seen in this range.

137

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7) The results show that all spectra have medium Raman lines and weak Raman lines

in tlie frequency range 600-1000 cm"'. Most of the medium Raman lines are seen in the

range 600-800 cm"' while weak lines appear between 900 - 1000 cm''.

8) A number of very weak Raman peaks are observed in the range of 1000 -1400 cm''.

At around 1300 cm'' few medium Raman peaks are seen in all the above spectra.

9) At around the frequency value of 1465 cm'* the two experimental results as shown

in Figure 6.4 (a, c) as well as the calculated results of [154] give strongest peak. The

present calculation given in Figure 6.4 (d) also exhibits a peak at this frequency but the

intensity is lower.

Table 6.4 Raman Spectra ofCeoBrt

1. Experiment (Frequency)

fref.l53Jcm'

65 -

86 -

101 --

134 -

146 --

170 -

195 -

204 209

-----

265

2. Experiment (Frequency)

[ref. 154] cm-'

-------------------

202 --

254 -

3. Numerical

Calculations (Frequency)

[ref. 153] cm' 71 77 81 -------

160 163 177 --

194 205 211

---

249 259

-

4. Present calculations

(Frequency) (Intensity) cm''

68 77 86 94 103 HI 120 128 137 145 154 162 171 180 188 197 205 214 222 231 239 248 257 265

12.3 3.2 2.2 2.4 1.4 2.1 6.4 15.9 6.3 13.9 6.8 17

23.1 8

10.2 6.2 6.5 12.9 31.3 32.3 19.6 22.9 49.8 54.5

138

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Table 6.4 - Continued

1. Experiment (Frequencv)

Iref. 1531 cm'

--

291

310 . -

333 ---

368 ---

400 ---

433 448 455

----

494

513 ----

555 --

585 ---

612 ----

2. Experiment (Frequency)

[ref. 154] cm'

263 -

273 -. --

307 -----

395 . ----

428 ------

498 506

---

536 -

573 ---

589 -

606 -----

3. Numerical

Calculations (Frequency)

Iref. 153] cm-' --. -

311 ---•

--

363 --

397

407 --------

486

507 •

------

575 582

--

606 -

620 ---

4. Present calculations

(Frequency) (Intensity) cm'

llA 282 291 299 308 316 325 333 342 351 359 368 376 385 393 402 410 419 428 436 445 453 462 470 479 487 496 504 513 522 530 539 547 556 564 573 581 590 599 607 616 624 633 641 650

156.3 341.8 381.1 194.8 55.5 34.1 46.5 179.2 65.9 48.6 100.9 108.7 38.7 39

35.6 51.2 58.4 65.6 111.4 329.8 128.4 123.7 38.7 28.9 31.8 45.1 66.9 75.5 41.5 25.9 23.3 24.5 66.8 252.8 54.3 24

30.3 29.8 18.4 17.5 48

32.4 14.7 10.8 17.4

139

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Table 6.4 - Continued

1. Experiment (Frequency)

fref. 153] cm'

.

. --. -

70-6 . 713 728

-747

--

769 776 785

-802 817

--

836 836

-855 ----------

949 ---------

2 Experiment (Frequency)

fref. 154] cm''

--------

722 -

740 . -

766 -

783 --

811 .

827

--

851 --------------------

3. Numerical

Calculations (Frequency)

fref. 1531 cm' -. ---

709

727 -

744 747 -

771 -

782 795

-819

----

843 -

867 -----

915 926

• -

946 --

970 ------

4. Present calculations

(Frequency) (Intensity) cm'

658 667 675 684 693 701 710 718 727 735 744 752 761 770 778 787 795 804 812 821 829 838 838 846 855 864 872 881 889 898 906 915 923 932 941 949 958 966 975 983 992 1000 1009 1017 1026

26.3 44.3 99.2

299.4 140.1 85.4 25 12 11

19.1 12.6 10.7 7.1 13.2 15.9 12.5 7.1 2.6 1.8 1.8 3.7 6.9 6.9 4.6 3.1 1.7 2.1 4.2 14.6 40.1 18.6 4.4 1.9 1.1 0.7 0.5 0.4 0.3 0.3 0.2 0.2 0.2 0.1 0.1 0.1

140

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Table 6.4 - Continued

1. Experiment (Frequency)

Iref. 153] cm'

--

1063 --

1089 -.

1113 ----

1157 --

1176 1188 ----

1232 -------------------

-

2. Experiment (Frequency)

fref. 154/cm-'

----------------

1168 -----•

-

1239 ------------------

-

3. Numerical

Calculations (Frequency)

fref. 1531cm-' --

1053 ---

1084 1094 -

1111 --

1139 ---

1170 1180 ----

1228 ----------

1317 -

1334 -------

-

4. Present calculations

(Frequency) (Intensity) cm''

1035 1043 1052 1060 1069 1077 1086 1094 1103 1112 1120 1129 1137 1146 1154 1163 1171 1180 1188 1197 1206 1214 1223 1231 1240 1248 1257 1265 1274 1283 1291 1300 1308 1317 1325 1334 1342 1351 1359 1368 1377 1385 1394 1402

0.1 0.2 0.2 0.2 0.3 0.4 0.7 1.6 6.3 16.8 7.5 1.9 0.9 0.6 0.6 0.9 3.3 3.1 2.7 0.8 0.5 0.4 0.4 0.5 0.6 0.8 1 1.4 2 3.4 7.4 24.8 76.4 55 17.4 10.6 25 8.3 3.8 3.1 3.7 7.1 30 16.7

141

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Table 6.4 - Continued

1. Experiment (Frequency)

lref.lS3]cm'

----

1444 -

1461 1467 1473

-1497

--------

1576

2. Experiment (Frequency)

[ref. 154] cm'

----

1443 -

1465 ----------

1574 --

3. Numerical

Calculations (Frequency)

[ref. 1531 cm' -

1413 -

1431 1441

-1465

--

1486 ---

1520 1534

--

1554 1565 1578

4. Present calculations

(Frequency) (Intensity) cm''

1411 1419 1428 1436 1445 1454 1462 1471 1479 1488 1496 1505 1513 1522 1530 1539 1548 1556 1565 1573

29.9 66.2 39.1 15.1 6.8 6.9 11.1 8.9 23.3 38.3 85.2 47.6 34.1 23

14.6 13.7 30.2 144 51.5 58.1

142

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Chapter - 7; Concluding Remarks and Scope for Future Work

7.1 IntrodHCtion

In the present Chapter the overall work submitted in the thesis has been

summarized and conclusions drawn from the invesitagations are given. Directions for

future research in the concerned areas have also been suggested.

7.2 Concluding Remarks

The work presented in the thesis pertains to steps towards a better understanding

of nanostructures such as PCNTs, CNT-IMJs, Ceo, CeoO and CeoBfe which may be used in

future in electronics and other systems. The main finding from the studies are

summarized below:

1) The present investigations confirmed the view of armchair nanotube being metallic in

nature.The energy gap calculated for various armchair CNTs is foimd to be

negligilbly small irrespective of their diameters. On the other hand the band gaps of

zigzag and chiral PCNTs decrease inversely with diameter and become constant at

high diameters range.

2) The transmission values for armchair as well as metallic zigzag CNT ig found to be

equal to 2 at Fermi level. The energy of the first semiconducting subbands from the

Fermi energy decreases with increase in the diameter of metallic PCNTs. For

example, in an armchair PCNTs (3, 3) the first semiconducting band opens at 2.31 eV

while for the bigger armchair PCNTs (6, 6) this value is found to be 1.33 eV.

3) Significant changes in the electronic properties are observed in the cases of

Intramolecular junctions. As an example, Table 4.5 shows that the band gap for CNT-

IMJ (5, 4) - (5,4) gets reduced to I.O eV from PCNT (5,4) having the band gap value

of 1.22 eV at Fermi level. Similar changes in transmission values of IMJs have been

noted. For example, the transmission value for semiconducting PCNT (7, 3) is zero

143

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while for the metalUc PCNT (7, 4) transmission at Fermi level is 2. But for

combination CNT-IMJ (7, 3) and (7, 4) the transmission at Fermi level becomes zero

and the semiconducting behavior prevails for the combination. Such Intramolecular

junctions behave as Schottky junction diodes.

4) Three different kind of molecular junctions have been studied here namely: the

circumferential jimctions; distributed junctions; and the grouped types of IMJs.

Significant changes in electronic properties were noted for the above types of joints.

For example, the calculations for semiconducting-metallic CNT-IMJ (7, 3) - (7, 4)

gives band gaps of 0.81 eV, 0.67 eV and 0.60 eV respectively for the circumferential,

distributed and grouped types of defects. While the band gap for PCNT (7, 3) is I.O

eV near Fermi level while metallic PCNT (7,4) has zero band gap.

5) The results of present calculations of Infrared spectrum for Ceo compare very well

with the experimental data and the ratio of observed experimental frequency to

calculated frequency varies between be 0.98 and 1.

6) Between the two isomers of CeoO the present calculations of Infrared spectra of CgoO

[5, 6] and CeoO [6, 6] show that C^O [5, 6] has greater similarity with the available

experimental data. This is opposed to the earlier observations where CaoO [6, 6]

isomer was found to be more stable [112].

7) The computed Infrared spectrum of CeoBre exhibits 25 significant peaks between

0-1530 cm'' range. The intense IR of CeoBre in 550-620 cm'' region originates from

radial motion of carbon skeleton with partially localized bromine molecules of

CeoBre. The medium IR peaks of CeoBrg in 700-800 cm'' range is due to vibrations of

the un-substituted fragments of bromine molecule and the stronger peaks observed

within 750-850 cm'' range is caused by the deformation due to carbon- carbon and

carbon- bromine atoms in CeoBre.

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8) The present computed Raman spectrum of Ceo compares well with the experimental

data [120] and are better predicted in comparison with the earlier calculations of Beu

et al [113]. For a number of frequencies for the present calculations the ratio of

observed experimental frequencies to the calculated values equals to about 1.0.

9) 14 major Raman peaks in addition to certain weak peaks are predicted in the spectrum

of CeoO [5, 6] while for CeoO [6, 6] eleven (11) major peaks along with other weak

peaks are seen in the calculated spectrum.

10)27 significant Raman lines with a number of weak lines are obtained in the present

studies for CeoBre in the range of 0-1701 cm''. High intensity Raman peaks appear

between 200 - 600 cm'' due to carbon-bromine stretching. Most of the medium

Raman lines are seen in the range 600-800 cm'' while weak lines appear between 900

-1000 cm"'.

7.3 Proposals for Future Work

The present studies have shed light on many aspects of carbon nanostructures of

different forms such as: PCNTs; CNT with IMJs; fullerene and; various derivatives of

flillerene. However, as to be expected, it has raised further questions requiring indepth

research in future. Certain aspects which need further investigations are listed below:

1) The present work focuses on calculations of DOS, LDOS and transmission of

different forms of CNT-IMJs. Further investigations in respect of prediction of

conductance and other parameter such as current-voltage characteristics etc. need to be

done. Special attention is needed in obtaining current-voltage characteristics in the case of

Semiconductor-Metallic joints which behave as Schottky junction diodes.

2) Electronic band structures of perfect nanotubes and carbon nanotubes with

Intramolecular junction has been carried out in the present investigations. Earlier

reseasrchers indicated [195] that by substitution of boron and nitrogen atoms in carbon

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lattice in nanotubes significantly change electronic band structures. Work should proceed

in fabrication of various types of CNT p-n and n-p junctions by chemically doping the

nanotubes. Research is required for obtaining current-voltage characteristics of such p-n

diode, n-p diode junctions and transistor-like devices. Experimental data in such studies

shall be vital in design and fabrication of these nanoscale devices.

3) The present work focuses on the theoretical calculations of Raman and IR spectra

of selected fullerene based nanostructures such as Cgo, CeoO and its isomers and CeoBre.

Further studies of fullerene based structures such as CeoS, CMCI^, C70, CnoO and CuoO

need to be investigated. Experimental data and characteristics of aforesaid structures are

scares. The theoretical studies will only be meaningful after the availability of

experimental data of these structures.

4) The Raman and IR studies have been carried out in the present work at fixed

temperature, mechanical forces and in the absence of magnetic and electric fields.It will

be useful to carry out further theoretical and experimental studies on nanostructures such

as PCNTs, CNT-IMJs and others at varying temperature, forces, magnetic and electric

fields.

5) There is a need for further refinement in the modeling, prediction procedures and

computational strategies for faster, more accurate calculations for larger molecules.

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