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A method for thermal model generation of MEMS packages Márta Rencz 1 Vladimír Székely 2 Zsolt Kohári 2 Bernard Courtois 3 2 Technical University of Budapest, Department of Electron Devices Budapest XI, Goldmann Gy. tér 3, H-1521 Hungary E-mail: <szekely| kohari>@eet.bme.hu 1 Microelectronics Research and Development Ltd. Budapest XI, Gulyás utca 27, H-1112 Hungary E-mail: [email protected] 3 TIMA Laboratory, 46 Avenue Felix Viallet 38031 Grenoble cedex, France E-mail: [email protected] Paper presented by András Poppe 1,2

A method for thermal model generation of MEMS packages

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1 Microelectronics Research and Development Ltd. Budapest XI, Gulyás utca 27, H-1112 Hungary E-mail: [email protected]. 2 Technical University of Budapest, Department of Electron Devices Budapest XI, Goldmann Gy. tér 3, H-1521 Hungary E-mail: @eet.bme.hu. - PowerPoint PPT Presentation

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Page 1: A method for thermal model generation of MEMS packages

A method for thermal model generation of MEMS packages

Márta Rencz1 Vladimír Székely2 Zsolt Kohári2 Bernard Courtois3

2Technical University of Budapest, Department of Electron Devices Budapest XI, Goldmann Gy. tér 3, H-1521 Hungary E-mail: <szekely|kohari>@eet.bme.hu

1Microelectronics Research and Development Ltd. Budapest XI, Gulyás utca 27, H-1112 Hungary E-mail: [email protected]

3TIMA Laboratory, 46 Avenue Felix Viallet 38031 Grenoble cedex, France E-mail: [email protected]

Paper presented by András Poppe1,2

Page 2: A method for thermal model generation of MEMS packages

Outline Introduction Basic theory of generating reduced order models

the time-constant spectrum concept generation of reduced order models from transient

results direct calculation of time-constant spectra

Benchmark problem: SP10 MEMS package Results by ANSYS + THERMODEL Results by SUNRED + THERMODEL Results by SUNRED direct calculations Measurement + THERMODEL

Use of the different approaches Conclusions, future plans

Page 3: A method for thermal model generation of MEMS packages

Introduction

MEMS applications are frequently thermally operated, so knowing the thermal characteristics of their packages is very important.

Now we present a method for the generation of reduced order dynamic thermal models, either from simulated or from measured transient results.

The applicability of the method is presented on a benchmark package used for (pressure) sensor applications.

Page 4: A method for thermal model generation of MEMS packages

The time-constant spectrum concept

))/exp(1()( ii

i tRta

1 2 3

R

iii RC /

C1

R2

C2

R3

C3

R1

Lumped RC systems: discrete lines

dtRta ))exp(/exp(1()()(

R

Si chip

Ideal heat sink

Dissipator

Distributed RC systems: continuos spectrum

a(t) is the unit-step response. The Ri set is replaced by the R() continuous spectrum of the distributed RC system, defined on the z = ln t, = ln logarithmic time scale.

Time constant spectrum is a useful representation of the dynamic behavior of linear RC systems, such as thermal systems.

Page 5: A method for thermal model generation of MEMS packages

Compact model generation from transient results

dtRta ))exp(/exp(1()()(

As shown before, the unit-step response can be expressed as:

which is a convolution-type formula. Differentiating both sides yields:

)()()( zwzRzadz

d

where is the convolution operator and

)exp(exp)( zzzw

Page 6: A method for thermal model generation of MEMS packages

Compact model generation from transient results (contd.)

Restoration of the R(z) time-constant spectrum involves the following steps:

1) The a(t) unit-step has to be transformed to logarithmic time scale

2) a(z) has to be differentiated (numerically)

3) da(z)/dz has to be deconvolved by w(z)

This is the basis of the NID method (network identification by deconvolution).

Page 7: A method for thermal model generation of MEMS packages

Compact model generation from transient results (contd.)

Once the time-constant spectrum is known, compact model generation is straightforward:

1) Discretize the spectrum

2) For the discrete spectrum generate the corresponding Foster-model

3) Convert the Foster-model into a Cauer-ladder network

Impelementation: THERMODEL

http://www.micred.com/thermodel.htm

Page 8: A method for thermal model generation of MEMS packages

Direct calculation of time-constant spectra

))exp((Im1

)( zzR sZ

)exp()sin(cos zj s

)()()( zezRzR rC

))2exp()exp(cos21

)exp(sin)(

zz

zzer

0

5

10

15

20

25

30

-1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1

er(z

)

z

2 degree4 degree

It can be proven that the the time constant spectrum can be calculated from the complex Z(s) thermal impedance by the expression below:

To avoid singularities on the - axis in practice we deviate from the axis by a small angle , as shown in the figure:

The calculated Rc(z) spectrum is the convolution of the real one with a known er(z) function:

The er(z) function is a narrow pulse (see the figure) which can be diminished by setting to any small value.

Calculation on a line deviated by a small angle from the - axis.

Width of the er(z) function at different values.

Page 9: A method for thermal model generation of MEMS packages

Direct calculation of time-constant spectra in different thermal field solvers

The frequency domain solution algorithm of both the THERMAN and SUNRED thermal field solvers has been extended according to the presented approach to allow direct calculation of thermal time-constant spectra.

Setting parameters of the time constant analysis in the THERMAN program.

Calculated time constant spectra that describe driving point and transfer behavior of a membrane.

http://www.micred.com/therman.html

http://www.micred.com/sunred.htm

Page 10: A method for thermal model generation of MEMS packages

Example – feature extraction for the veri-fication of detailed models of a package

Time-constant spectra are easy to compare. Good match

suggests that even the 2D model is accurate enough in

this case.

Time-constant spectrum calculated with the 2D model:

2D SUNRED model and its steady state simulation results:

Measured unit-step transient response:

Time-constant spectrum extracted by THERMODEL from above measured transient response:

3D SUNRED model and its steady state simulation results:

Time-constant spectrum calculated with the 3D model:

Page 11: A method for thermal model generation of MEMS packages

Our options for generating reduced order models

Thermal transient measurement + THERMODEL Transient simulation with a field solver +

THERMODELWe tried in the present study: ANSYS + THERMODEL SUNRED + THERMODEL

Direct calculation with a field solverWe tried in the present study: SUNRED

Our benchmark problem: SP10 sensor package

Page 12: A method for thermal model generation of MEMS packages

The first simulation model

Part(s) Material Thermalconductivity

[W/mK]

Specific heatC [Ws/kgK]

Mass density103 [kg/m3]

Chip Silicon 100 678 2.33Die attachadhesive

QMI 505 2 525 1.6

Capsule NittoMP-7410TA

0.882 270 2

Leadframe OLIN C 194 262.5 383 8.9

Due to plane symmetry only half of the structure was simulated. The package was treated as if mounted on a PCB (ideal heat-sink).Convection was neglected.P=1W applied on the chip.

Page 13: A method for thermal model generation of MEMS packages

ANSYS simulation, reduced order modeling by THERMODEL

Steady-state results by ANSYS

0

5

10

15

20

25

30

1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000

Tem

pe

ratu

re [

K]

Time [s]

Transient step-response by ANSYS

-10

0

10

20

30

40

50

60

1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000

R(z

)

[K/W

/de

ca

de

]

Time [s]

THERMODEL result: the R(z) time-constant spectrum

Corresponding time-constant spectrum calculated by THERMODEL

Element values of the identified 3 stage model network:N R [K/W] C [Ws/K]1 2.89 4.74e-022 7.54 3.12e-02 3 1.62e+01 2.03e-01

Page 14: A method for thermal model generation of MEMS packages

SUNRED simulation, reduced order modeling by THERMODEL

Transient step-response by SUNRED Corresponding time-constant spectrum calculated by THERMODEL

0

5

10

15

20

25

30

0.0001 0.001 0.01 0.1 1 10 100

Tem

pe

ratu

re [K

]

Time [s]

-5

0

5

10

15

20

25

30

0.0001 0.001 0.01 0.1 1 10 100

R(z

)

[K/W

/de

ca

de

]

Time [s]

THERMODEL result: the R(z) time-constant spectrumTue Dec 14 12:19:38 1999

.SUBCKT cauer 1 0

C0 1 6 1.299838e-02

R0 1 2 1.406075e-01

C1 2 6 2.946844e-02

R1 2 3 1.809813e+00

C2 3 6 1.734340e-02

R2 3 4 6.302130e+00

C3 4 6 1.910058e-01

R3 4 5 1.730904e+01

C4 5 0 7.794206e+00

R4 5 0 2.187223e+00

.ENDS cauer

SPICE netlist of the model generated by THERMODEL

Page 15: A method for thermal model generation of MEMS packages

SUNRED simulation, time-constant spectrum calculated by direct method

-5

0

5

10

15

20

25

30

35

40

45

0.001 0.01 0.1 1 10 100

R(z

) [K

/W/d

aca

de

]

Time [s]

Page 16: A method for thermal model generation of MEMS packages

Verification by measurement

-10

0

10

20

30

40

50

60

70

1e-07 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000

Te

mp

era

ture

[K

]

Time [s]

THERMODEL: input and model-response for 1W step

INPUTMODEL

-10

0

10

20

30

40

50

60

70

80

1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000

R(z

) [

K/W

/de

cad

e]

Time [s]

THERMODEL result: the R(z) time-constant spectrum

Measured transient step response and the response of the model generated by THERMODEL from the measured data

Time constant spectrum extracted by THERMODEL from the measured unit-step response

Page 17: A method for thermal model generation of MEMS packages

Modified simulation model

The package was treated as if mounted on a PCB and the back surface of the PCB was attached to an ideal heat-sink. Convection was neglected. P=1W applied on the chip. PCB=0.55 W/mK

During simulation the conditions of the measurement setup have to be considered to help model verification.

Page 18: A method for thermal model generation of MEMS packages

SUNRED transient simulation + THERMODEL

Loci of main spectrum lines coincide, and the peak temperature is also close to the measured one.

0

10

20

30

40

50

60

70

80

1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000

Te

mp

era

ture

[K

]

Time [s]

THERMODEL: input and model-response for 1W step

INPUTMODEL

-20

0

20

40

60

80

100

120

0.0001 0.001 0.01 0.1 1 10 100

R(z

) [

K/W

/de

cad

e]

Time [s]

THERMODEL result: the R(z) time-constant spectrum

Transient step response simulated by SUNRED and the response of the model generated by THERMODEL from the measured data

Time constant spectrum extracted by THERMODEL from the simulated unit-step response. Even a single RC stage is enough for modeling.

Page 19: A method for thermal model generation of MEMS packages

Execution timesTool # of nodes Time-scale Points/decade Run time*

[min/decade]ANSYS transient 17823 logarithmic 10 33.3SUNRED transient 8192 quasi-log 20 20.3SUNRED direct t.c. 8192 logarithmic 20 313

  Comments

1) Note, that the ANSYS runs were done on a DEC AXP 500 MHz computer, while SUNRED was running on a PC with a 200 MHz Pentium processor.

2) In direct time-constant calculation SUNRED can not take advantage some of its algorithmic features which enable a rather quick transient simulation.

3) Run-time of THERMODEL is a few seconds even on PC, it can be neglected with respect to the execution times of the field solvers.

Page 20: A method for thermal model generation of MEMS packages

Summary We propose a method for reduced order thermal

modeling of packages: transient simulation by a field solver followed

by model identification with THERMODEL

transient measurement results evaluation by THERMODEL

Only one example was shown here, but we carried out a lot of similar simulations. We realized, that MEMS packages are well described with very simple reduced order models.

Page 21: A method for thermal model generation of MEMS packages

SummaryTHERMAL

SIMULATION (FEM, FDM, BEM)

THERMODEL

THERMAL TRANSIENT

MEASUREMENT

Multi-domain simulation and design systems

Library of reduced order models (e.g. in SPICE format)

Page 22: A method for thermal model generation of MEMS packages

Summary

Sensitivity of different sensors are very much dependent on temperature. Thus, simple but accurate behavioral thermal models of MEMS packages are essential.

In sensor design considering thermal characteristics of packages on system level is important. Our reduced order models can be applied to support this.