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A High Efficiency Synchronous A High Efficiency Synchronous Buck VRM with Current Source Buck VRM with Current Source Gate DriverGate Driver
Wilson EberleZhiliang ZhangDr. Yan-Fei LiuDr. P.C. Sen
QueenQueen’’s Power Groups Power GroupKingston, ON, CanadaKingston, ON, Canada
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OutlineOutline1. Introduction
1.1. Why you should use current source gate driveWhy you should use current source gate drive2.2. Drawbacks of existing voltage source and Drawbacks of existing voltage source and
resonant based driversresonant based drivers2. Proposed Driver and Operation3. Driver Design Procedure4. Driver Optimization in the VRM5. Logic and Level Shift Circuits6. Experimental Results7. Conclusions
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IntroductionIntroduction•• Application:Application: low voltage high current low voltage high current
voltage regulator modulesvoltage regulator modules
•• Trend to increase switching frequency for Trend to increase switching frequency for improvements in:improvements in:++ power densitypower density++ dynamic performancedynamic performance
Topology of Choice
Synchronous Buck
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Drawbacks of Increased Switching Drawbacks of Increased Switching Frequency with Conventional DriversFrequency with Conventional Drivers
RextPWM
VCC=VGS
QP
QN
Gate Loss
Switching Loss
MOSFET Driver
SGSggate fVQP = SDSDSfallriseswitch fIVttP )(21
+=
MOSFET, or BJT
switches
Hard Switching WaveformsPower MOSFETparasitics in blue
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Resonant Gate Drive TechniquesResonant Gate Drive Techniques
++ Many good (~10) circuits proposed Many good (~10) circuits proposed since early 1990s, but generally unusedsince early 1990s, but generally unused
•• LC resonant charging of the power LC resonant charging of the power MOSFET gate from zero initial currentMOSFET gate from zero initial current
•• These circuits emphasize gate energy These circuits emphasize gate energy savings,savings, but ignore, or canbut ignore, or can’’t achieve t achieve potential switching loss savingspotential switching loss savings
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Resonant Gate Drive ReviewResonant Gate Drive ReviewExisting techniques suffer from at least Existing techniques suffer from at least one of five problems:one of five problems:
1.1. Circulating current conduction lossCirculating current conduction loss2.2. Peak current dependent on duty cyclePeak current dependent on duty cycle
CirculatingCurrent
Loss
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Resonant Gate Drive ReviewResonant Gate Drive Review3.3. Large inductance, bulky transformer, or Large inductance, bulky transformer, or
coupled inductor coupled inductor 4.4. Slow turnSlow turn--on and/or turnon and/or turn--offoff5.5. Gate not actively clamped high and/or low, so Gate not actively clamped high and/or low, so
false triggering (false triggering (Cdv/dtCdv/dt) can result) can result
Q1
Qb
igate
vGSQ
Charging
Discharging
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Conventional vs. Resonant DriveConventional vs. Resonant DriveSwitching Loss SavingsSwitching Loss Savings
Voltage source Voltage source RCRC--type chargingtype charging
limits speedlimits speed
Constant current source Constant current source type charging type charging
improves speed!improves speed!
Gate Gate CurrentCurrent
CURRENT SOURCE DRIVERS CAN CURRENT SOURCE DRIVERS CAN REDUCE TURNREDUCE TURN--ON AND TURNON AND TURN--OFF LOSS!OFF LOSS!
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OutlineOutline1. Introduction2. Proposed Driver and Operation3. Driver Design Procedure4. Driver Optimization in the VRM5. Logic and Level Shift Circuits6. Experimental Results7. Conclusions
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Proposed DriverProposed Driver
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Creating a Discontinuous Current SourceCreating a Discontinuous Current SourceIndependent control of high side (HS) MOSFET and SR
Key To Speed:Key To Speed:• Create discontinuous
inductor current source, then
• Divert inductor pre-charge current to the gate
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High Side MOSFETHigh Side MOSFETTurn On SequenceTurn On Sequence
• Dictated by PWMQ1signal
• Independent control of HS MOSFET and SR
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High Side MOSFETHigh Side MOSFETTurn On SequenceTurn On Sequence
• Dictated by PWMQ1signal
• Independent control of HS MOSFET and SR
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High Side MOSFETHigh Side MOSFETTurn On SequenceTurn On Sequence
• Dictated by PWMQ1signal
• Independent control of HS MOSFET and SR
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High Side MOSFETHigh Side MOSFETTurn On SequenceTurn On Sequence
• Dictated by PWMQ1signal
• Independent control of HS MOSFET and SR
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High Side MOSFETHigh Side MOSFETTurn Off SequenceTurn Off Sequence
• Dictated by PWMQ1signal
• Independent control of HS MOSFET and SR
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SR OperationSR Operation• Same procedure for
SR• Different time
intervals due to larger gate charge
• Dictated by PWMQ2signal
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OutlineOutline1. Introduction2. Proposed Driver and Operation3. Driver Design Procedure4. Driver Optimization in the VRM5. Logic and Level Shift Circuits6. Experimental Results7. Conclusions
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Driver DesignDriver Design1. Set the turn on time, or
average gate current2. Set inductor pre-charge
time3. Calculate the inductor
value
on
gavg
avg
gon t
QIg
IgQ
t == ,
⎟⎠
⎞⎜⎝
⎛ += 11 4 don
g
oncb tt
QtV
L
ond tt21
1 ≈
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OutlineOutline1. Introduction2. Proposed Driver and Operation3. Driver Design Procedure4. Driver Optimization in the VRM5. Logic and Level Shift Circuits6. Experimental Results7. Conclusions
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Optimizing HS Gate Current Optimizing HS Gate Current w.r.tw.r.t. . Driver Loss and Switching LossDriver Loss and Switching Loss
1 1.5 2 2.5 3 3.5 4 4.5 50
0.250.5
0.751
1.25
1.51.75
22.25
2.52.75
33.253.5
avgHS
HS avgHSIg
1∝
avgHSIg∝
Total Driver LossTotal Driver Loss
SwitchingSwitchingLossLoss
Total Switching Total Switching + Driver Loss+ Driver Loss
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Optimizing SR Gate Current Optimizing SR Gate Current w.r.tw.r.t. . Driver Loss and Body Diode LossDriver Loss and Body Diode Loss
1
1
avgQIg∝
1avgQIg∝
Total Driver LossTotal Driver Loss
Body Diode LossBody Diode Loss
Total Switching Total Switching + Driver Loss+ Driver Loss
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OutlineOutline1. Introduction2. Proposed Driver and Operation3. Driver Design Procedure4. Driver Optimization in the VRM5. Logic and Level Shift Circuits6. Experimental Results7. Conclusions
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Logic Generation for Logic Generation for DeadtimeDeadtimeand Sand S11--SS44 Gating SignalsGating Signals
Gating Signal Gating Signal OutputsOutputs
HS HS MOSFETMOSFET SRSR
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Level Shift CircuitLevel Shift Circuit6 Switches (S6 Switches (S11--SS66))
RequireRequireLevel Shift Level Shift
CircuitsCircuits
x6x6
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OutlineOutline1. Introduction2. Proposed Driver and Operation3. Driver Design Procedure4. Driver Optimization in the VRM5. Logic and Level Shift Circuits6. Experimental Results7. Conclusions
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Experimental Setup and SpecsExperimental Setup and Specs•• Single Phase Apples Single Phase Apples
to apples comparisonto apples comparison• 6-layer, 2oz• 12V Input• 1.3V Output• Up to 30A Load•• 1MHz1MHz• IRF6617 HS• IRF6691 SR• 330nH inductor:
Vishay IHLP5050FD
Current Source DriverCurrent Source DriverSS11--SS88: NDS351AN, L: NDS351AN, L11: 68nH, L: 68nH, L22: 307nH: 307nH2.5ns fixed maximum 2.5ns fixed maximum deadtimedeadtime
Conventional DriverConventional DriverUCC27222UCC27222, Predictive Predictive deadtimedeadtime controlcontrol
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WaveformsWaveformsHS MOSFET HS MOSFET
and SR and SR gategate--source source waveformswaveforms
HS MOSFET HS MOSFET DriverDriver
InductorInductorCurrentCurrent
WaveformWaveform
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Efficiency vs. LoadEfficiency vs. Load1MHz, 12V input, 1.3V load, 10V 1MHz, 12V input, 1.3V load, 10V VccVcc
4% 4% Improvement!Improvement!
78.5
83.2 82.883.8
80.5
77.9
79.7
85.5
86.685.9
84.2
81.9
76
77
78
79
80
81
82
83
84
85
86
87
88
5 10 15 20 25 30Load Current [A]
Effic
ienc
y [%
]
UCC27222 Vo=1.3VResonant Driver Vo=1.3V
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Power Loss vs. LoadPower Loss vs. Load1MHz, 12V input, 1.3V load, 10V 1MHz, 12V input, 1.3V load, 10V VccVcc
2.5W 2.5W ImprovementImprovement
PerPerPhase!Phase!
1.792.62
3.76
5.42
7.87
11.07
1.662.20
2.99
4.24
6.09
8.58
0
1
2
3
4
5
6
7
8
9
10
11
12
5 10 15 20 25 30Load Current [A]
Loss
[W]
UCC27222 Vo=1.3VResonant Driver Vo=1.3V
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1.662.20
2.99
4.24
6.09
8.58
1.792.62
3.76
5.42
7.87
11.07
0
1
2
3
4
5
6
7
8
9
10
11
12
5 10 15 20 25 30Load Current [A]
Loss
[W]
Resonant Driver Vo=1.3VUCC27222 Vo=1.3V
Implications of Loss SavingsImplications of Loss Savings• 15W savings (2.5Wx6) in a
6 phase VRM, or• 120A output, assuming
loss limited to 9W per phase:• 5 phases required for
conventional driver (27A max per phase; 120A/27A=5 phases)
• 4 phases required for current source driver (30A max per phase; 120A/30A=4 phases)
• 1 phase eliminated: A SIGNIFICANT COST SAVINGS
27A
9W
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OutlineOutline1. Introduction2. Proposed Driver and Operation3. Driver Design Procedure4. Driver Optimization in the VRM5. Logic and Level Shift Circuits6. Experimental Results7. Conclusions
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Summary of AdvantagesSummary of Advantages• Current source drive to increase switching
speed, decrease switching loss and decrease conduction loss
• SR gate energy recovery (~50%) or higher operating Vcc
• Small driver inductors:• HS MOSFET: <100nH compared to 1uH+ for other
competitor current source gate driver• Optimized independent control of HS and SR
gate currents• Potential driver integration with no additional
pins for HS MOSFET and 1 additional pin for SR
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ConclusionsConclusions• Novel current source gate driver for
synchronous buck VRM proposed• Driver operation, design, optimization,
logic, level shift and experimental results presented
• Driver achieves 4% efficiency improvement and 2.5W savings over conventional at 1MHz
• Elimination of 1 phase at 1.3V/120A load
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AcknowledgementsAcknowledgementsThe authors would like to thank:
Ontario Centres of Excellence
C&D Technologies
Other interesting material available at:www.queenspowergroup.com
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Questions?Questions?