5Oth SISC Session”• Nicollian Award: MiaomiaoWang (Yale) for tunneling spectroscopy of traps in high‐k MOS • 2005 –Key Bridge Marriot (Arlington VA) –GC: Eric Vogel •

5Oth SISC ‐ “RUMP Session”

December 13, 2019Bahia Resort and HotelSan Diego, CA, USA

Moderator: Bob WallaceUT‐Dallas

SISC Program Committee: 1997‐2000; 2009‐2012SISC Executive Committee: 2001‐2004

Limerick Contest Winner: 1998

© 2019 R.M.Wallace 2

© 2019 R.M.Wallace 3https://www.ieeesisc.org/past.html#history

First… a useful Review!


https://www.ieeesisc.org/history/SISC_history_2009.pdf

BTL Transistor Technology Symposium (1952)

© 2019 R.M.Wallace5

First detailed disclosure of BTL transistor research results and fabrication for a $25,000 license(~$242,225 in 2019)

Symposium was “enabled” by antitrust concerns

From Lojek (2007)

(Computer History Museum)

SiO2 studied for passivation…(~1958‐61)


MOS – 1959 at BTL


“…it served no immediate need in AT&T equipment, the company did not pursue development of a product.” (Laws – Computer History Museum)

Drivers in the early 1960’s


Minute Man II (1965‐1997)

Minute Man I ‐ Guidance

Minute Man II ‐ Guidance

The guidance system contained 2,000 microchips made by Texas Instruments.

Total real R&D expenditures by source of funds, 1960‐2000.Source: U.S. National Science Foundation,

National Patterns of R&D Resources.

From Lojek (2007)



Apollo Guidance Computer

https://airandspace.si.edu/stories/editorial/apollo‐guidance‐computer‐and‐first‐silicon‐chipshttps://www.hq.nasa.gov/alsj/ic‐pg3.html

Stein, Congressional Research Service Report RL34645 (2009)

$B

Telstar‐1Starfish prime



NNSA

O’Niel in Atomic Audit, S. Schwartz, ed. (1998)

underground

Important MOS Conferences in the 1960’s…

• IEEE Solid‐State Device Research Conference (SSDRC) – Test device structures, including MOS• Electrochemical Society Meetings• Silicon Interface Specialists Conference (1965)

• Sponsored by the IEEE Electron Devices Group• Devoted to Physics and Chemistry of MOS structures• ~70 attendees (by invitation)

• Physics of Failure Conference in Electronics• Air Force push starting in 1961• 1966 conference famous for lively mechanisms discussion…• Leads to the Reliability Symposium…

Source: Basset: “To the Digital Age”, pp.139‐146© 2019 R.M.Wallace 12

Where it all started…1965

Exciting SISC & Limericks!


Some Notable Organizers –SISC 1965

• Conference Committee• Steven R. Hofstein (Chairman‐Invitations) – RCA – First commerically available MOS Transistors (3N98, 3N99 ‐ 1964) and CMOS (1968)

• Robert Norman – Fairchild, GMe (co‐founder) – Circuit designer, First planar integrated circuit team (1960), “Micrologic” Flip‐Flop ICs (1961), Proposed solid state memory, first calculator team

• C.T. Sah – Shockley Semi. Lab, Fairchild, U. Illinois‐ pn junctions, MOS diodes, CMOS concept, text book!

• Earl Schlegel – Philco‐Ford – Interface strain, IEEE TED Bibliography on MOS (1967)

• Ed H. Snow – Fairchild – MOS reliability (“instabilities” ‐mobile ions, CV measurement, w/ Deal and Grove) on a scientific basis

• James E. Thomas – BTL, IBM (Solid State Mgr in CD), GI

Sources: Basset: “To the Digital Age”Lojek: “History of Semiconductor Engineering”SISC 1965 Technical Program© 2019 R.M.Wallace 14

Some Notable Attendees – SISC 1965

• Gerald Abowitz – Phillips – Si surface states and orientation• Mohamed M. (John) Atalla – BTL, hp associates, Fairchild, … – First SiO2

MOSFETs (“oxide passivation”) (1958‐60)• Pieter Balk – IBM – MOS chemistry research manager, oxidation rate and

orientation, Effect of hydrogen anneals on interface states• C. N. Berglund – BTL – steam‐grown SiO2/Si via CV measurements• Bruce Deal – Fairchild – Oxide growth kinetics, ion‐induced flatband shifts• Robert Donovan – RTI – Electron irradiation and trapping, the elephant!• Alan Fowler ‐ IBM – MOS physics research manager, mobility and orientation• Adolf Goetzberger – BTL – MOS CV (conductance) measurements• Andy S. Grove – Fairchild – Radiation damage model, oxidation • Fredric Heiman – RCA ‐ First commercially available MOS Transistors• Hap Hughes – NRL – Radiation hardening• Ed Nicollian ‐ BTL – MOS CV (conductance) measurements• Paul Rappaport – RCA – Transistors, ICs, Photovoltaics• Karl Zaininger – RCA – MOS Transistor


Institutions Represented– SISC 1965

• Industry• Amelco, Bell Telephone Labs (BTL), Computer Control, Corning Glass,

Crystalonics, Fairchild, Ford, General Electric (GE), General Instruments (GI), General Microelectronics (GMe), General Telephone & Electronics, Hitachi, hp, IBM, Motorola, Northrop, Philco, Raytheon, RCA, Sperry, Sprague, Sylvania, Texas Instruments, Westinghouse,

• Government• NRL, Army (Fort Monmouth), Air Force (Rome)

• Academic• Polytechnic Inst. Brooklyn, Case Inst. Technology, Carnegie Inst. Technology,

MIT (Lincoln), Princeton, Research Triangle Inst.


Andy Grove, Bruce Deal, and Ed Snow discuss MOS technology at the Fairchild Palo Alto R&D Laboratory, 1966.© 2019 R.M.Wallace 17

Robert Donovan’s assessment (1966)

https://www.computerhistory.org/revolution/digital‐logic/12/279

Sah

(Physics of Failure Conference in Electronics‐Columbus)

(Fairchild) (Shockley Labs)

(TI)

(RCA)

(RCA)

(IBM)

(Sprague)


MOS Papers by year (1967)

Bassett, after Schlegel IEEE TED (1967)


Some notable papers in the mid‐late 1960’s• P. Balk, “Effects of hydrogen annealing on silicon surfaces,” presented at the Electrochemical Society Meeting San Fransisco, CA

May 9‐13, 1965, Extended Abstracts of Electronics Division, Vol. 14, No. 1, abstract No. 109, pp. 237–240, May 1965

• E. H. Snow, A. S. Grove, B. E. Deal, and C. T. Sah, “Ion Transport Phenomena in Insulating Films,” J. Appl. Phys., 36(5), pp. 1664‐1673, May 1965.

• A. S. Grove, B. E. Deal, E. H. Snow and C. T. Sah, “Investigation Of Thermally Oxidised Silicon Surfaces Using Metal‐oxide‐semiconductor Structures,” Solid‐State Electron. 8, pp. 145‐163, Aug. 1965

• P.Balk, P. J. Burkhardt, L. V. Gregor, “Orientation Dependence of Built‐In Surface Charge on Thermally Oxidized Silicon,” Proc. IEEE, pp. 2133‐2134, Dec. 1965

• E. Kooi, “Effects of low temperature heat treatments on the surface properties of oxidized silicon,” Philips Research Reports 20, pp. 578–594, Oct. 1965

• A. G. Resvez, “Taxonomy of Electric Charges in Metal‐Insulator‐Semiconductor Systems,” Proc. IEEE, pp. 1002‐1003 , Jul. 1966

• E. Arnold and G. Abowitz, “Effect Of Surface States on Electron Mobility in Silicon Surface‐inversion Layers,” Appl. Phys. Lett., 9(9), pp. 344‐346, Nov. 1966

• R. P. Donovan, “The Oxide‐Silicon Interface,” Physics of Failure in Electronics Vol.4, Prof. 5th Symposium, Columbus, OH, pp. 199‐231, Nov. 1966

• C. N. Berglund, “Surface States at Si‐SiO2 Interfaces, ” IEEE TED, ED‐13, p. 701. 1966

• H. G. Carlson, C. R. Fuller, D. E. Meyer, J. R. Osborne, V. Harrap and G. A. Brown, “Clean Metal Oxide Semiconductor Systems,” Physics of Failure in Electronics Vol.4, Prof. 5th Symposium, Columbus, OH, pp. 265‐291, Nov. 1966

• B. E. Deal, M. Sklar, A. S. Grove, and E. H. Snow, “Characteristics of the Surface‐State Charge of Thermally Oxidized Silicon, J. Electrochem. Soc., pp.266‐274, Mar. 1967

• G. Abowitz, E. Arnold, and J. Ladell, “Symmetry of Interface Charge Distribution in Thermally Oxidized Silicon, Phys. Rev. Lett., 18(14), pp. 543‐546, Apr. 1967

• Y. Miura and Y. Matukura, "Instabilities of MOS Structure,“ Jap. J. Appl. Phys., Vol. 6, p. 582, May 1967.

• E. H. Nicollian and A. Goetzberger, “The Si‐SiO2 Interface ‐ Electrical Properties as Determined by the Metal‐Insulator Silicon Conductance Technique,” Bell Sys. Tech. Journal, 66(6), pp. 1055‐1133, Jul 1967.

• E. S. Schlegel, “A Bibliography of Metal‐Insulator‐Semiconductor Studies,” IEEE TED, 14(11), pp.728‐749, Nov. 1967 (prepared for the 2nd (1967) SISC!)

• A. G. Resvez and K. H.Zaininger, “The Si‐SiO2 Solid‐Solid Interface System,” RCA Review, pp. 22‐76, Mar. 1968

• B. E. Deal, E. L. MacKenna, and P. L. Castro, “Characteristics of Fast Surface States Associated with SiO2‐Si and Si3N4‐SiO2‐Si Structures,” J. Electrochem. Soc., pp. 997‐1005, Jul.1969


And so the industry develops…


From Lojek (2007)

From anysilicon.com (2019)

SISC Anniversary Lectures and Program Changes

• (1979) 10th SISC – J.L. Moll: “The Outer Limits of Si VLSI”• (1984) Poster Session Introduction• (1989) 20th SISC – R.H. Dennard: “The evolution and scaling of DRAMs”• (1995) Ed Nicollian Best Student Paped Award Introduced• (1999) 30th SISC – “The Great Breakdown Debate!”• (2009) 40th SISC – T.P. Ma: “Gate Dielectrics, Interfaces and the SISC”• (2012) C.T. Sah EDS “Celebrated Member” celebration with SISC• (2016) SISC moves to the west coast


A sample of SISC “recent” notable topics/papers• 1996 – The Catamaran – GC: Bob Stahlbush

• SiO2/SiC, “nitride” dielectrics, “ultra‐thin” (~4‐5nm) oxides, Monte Carlo transport, Ab‐initio modeling, Breakdown, radiation effects, Si/SiGe Heterostructures, trapping, Pbcenters, impact of direct tunneling…

• “Deuterium annealing for improved hot carrier reliability”• Nicollian Award: Jan De Blauwe (imec) for SILC studies

• 1997 – The Mills House (Charleston SC) – GC: Doug Buchanan• SiO2/SiC, JVD nitride, Interface traps, mobile protons in oxides, “alternative dielectrics”

(Ta2O5), Hot electrons by BEEM, Pb and E’ centers, charge pumping• “…A fundamental re‐examination of how we assign XPS spectra at the SiO2/Si interface?”• Nicollian Award: Tanya Nigam (imec) for Validity of constant current breakdown test

• 1998 ‐ The Catamaran – GC: Len Trombetta• SiO2/SiC, more mobile protons, Radiation effects, more alternative dielectrics (Ta2O5, TiO2), dopant diffusion control, RPECVD nitrides• “Crystalline oxides on silicon” (SrTiO3)• Nicollian Award: Mrinal Das (Purdue) for Inversion channel mobility in SiC MOSFETs

• 1999 – The Mills House (Charleston SC) – GC: Dan Fleetwood• Alternative dielectrics (Ta2O5, TiO2, Al2O3, Hf/Zr‐silicate, HfO2), Hydrogen passivation, Breakdown and Reliability (AT&T vs IBM)• “…This analysis predicts that silicon oxide cannot be made much thinner than about

2.6±0.15nm assuming 1V operation…• Nicollian Award: Shigeyasu Uno (Osaka Univ.) for I‐V of ultra thin oxide films after soft

breakdown.


A sample of SISC “recent” notable topics/papers• 2000 – The Catamaran – GC: Beall Fowler

• “High‐k dielectrics”, non‐volatile memory, border traps, SiC MOS, GaN MIS, Breakdown, radiation effects, anode hole injection, …

• “ALCVD for advanced gate dielectric applications”• Nicollian Award: Z.J. Luo (Yale) for 1 nm Zr‐silicate for CMOS application

• 2001 – The Westin Grand (Washington DC) – GC: Kathy Krisch• “High‐k dielectrics”, “Traditional Insulators”, Interface traps and ESR, JVD nitride traps,…• “Integration challenges for high‐k gate stack engineering”• Nicollian Award: Thomas Kauerauf (imec) for Low Weibull slope of breakdown

distributions in high‐k layers”

• 2002 ‐ The Catamaran – GC: Lori Lipkin• “High‐k dielectrics”, SiC MOS• “Passivation of Ga2O3‐GaAs Interfaces…” • Nicollian Award: Wenjuan Zho (Yale) for mobility extraction for high‐k MOSFETs

• 2003 – Key Bridge Marriot (Washington DC) – GC: Bob Wallace• High‐k metal gate integration, Ferroelectrics, SIC, III‐V, …• “Challenges for dual metal gate electrodes on HfO2”• Nicollian Award: Mike Hale (UCSD) for Oxide bonding on GaAs and understanding Fermi

Level pinning


A sample of SISC “recent” notable topics/papers• 2004 – The Catamaran – GC: Carl‐Mikael Zetterling

• Metal gates, high‐k dielectrics, Ge MOS, III‐V‐MOS, SiC MOS, hydrogen, NBTI, breakdown, charge pumping,…

• “Suppression of interfacial oxide formation by oxygen scavenging for EOT<0.7nm”• Nicollian Award: Miaomiao Wang (Yale) for tunneling spectroscopy of traps in high‐k MOS

• 2005 – Key Bridge Marriot (Arlington VA) – GC: Eric Vogel• Metal gates, FUSI, high‐k dielectric reliability, interface dipoles, phase change memory, Ge

MOS, NBTI, breakdown, charge pumping,…• “H2/D2 isotopic effect on NBTI in SiOx/HfSiON/TaN””• Nicollian Award: Frank Yeh (Yale) on SONOS NV‐memory

• 2006 ‐ The Catamaran – GC: Glen Wilk• Metal gates, high‐k dielectric reliability, ferroelectric memory, Ge MOS, pMOS Vt control,

breakdown, charge pumping,…• “Opportunities and challenges for high‐k/III‐V MOSFETs” • Nicollian Award: Laurent Thevenod (LETI) for mobility extraction for high‐k MOSFETs from

magnetoresistance measurements

• 2007 – Key Bridge Marriot (Arlington VA) – GC: Matt Copel• High‐k/metal gate, trap levels in high‐k, hot carrier injection, charge pumping, III‐V MOS,

work function control,…• “Ge and III/V: the CMOS of the future”• Nicollian Award: Stanislov Markov (U. Glasgow) for band‐gap and permittivity change at

high‐k gate stack interfaces”


A sample of SISC “recent” notable topics/papers• 2008 – The Catamaran – GC: Ben Kaczer

• Metal/high‐k, Ge MOS, III‐V‐MOS, NAND Flash, work function control,…• Tutorial introduced! Guido Groeseneken on Charge Pumping• “Physical origin of Vth instability in high‐k MOSFETs”• Nicollian Award: Marko Milojevic (UTD) for In situ XPS of clean‐up effect on III‐V

• 2009 – Key Bridge Marriot (Arlington VA) – GC: Dina Triyoso• Metal/high‐k, “oxide electronics”, multiferroics, Ge MOS, III‐V‐MOS, graphene,…• Tutorial: Thomas Schroeder on thin (ferroelectric) oxide characterization by XRD/XPS• “Metal‐dependent contact properties ion graphene FETs”• Nicollian Award: Jacopo Franco (imec) for Si‐passivation on NBTI reliability of Ge and SiGe

pMOSFETs

• 2010 ‐ The Catamaran – GC: Martin Frank**• Metal/high‐k, oxide electronics, Ge MOS, III‐V‐MOS, SIC MOS, graphene,…• Tutorial: Matthias Passlack on interface state analysis on non‐silicon semiconductors• “Trap distribution in ultrathin dielectrics by inelastic tunneling spectroscopy” • Nicollian Award: Fei Xue (UT‐Austin) for InAs and InGaAs buried channel MOSFETs with ALD

gate dielectrics

• 2011 – Key Bridge Marriot (Arlington VA) – GC: John Robertson• Metal/high‐k, Ge MOS, III‐V‐MOS, Cross‐bar memory, work function control, relibility…• Tutorial: Mark Lundstrom on understanding the Nanoscale MOSFET• “Origin of eff rolloff for replacement gate process”• Nicollian Award: Suyog Gupta (Stanford) for ALD on GeSn

© 2019 R.M.Wallace 29** Postdoc who eventually became a SISC General Chair

A sample of SISC “recent” notable topics/papers• 2012 – The Catamaran – GC: Michele Houssa**

• Metal/high‐k, Ge MOS, III‐V‐MOS, VO2 MIT devices, ReRAM, reliability…• Tutorial: Dirk Wouters on Resistive Switching Devices• “Graphene Bilayer Pseudospin FETs…”• Nicollian Award: Jiangjiang Gu (Purdue) for LaAlO3/InGaAs gate‐all‐around nanowire MOSFETs

• 2013 – Key Bridge Marriot (Arlington VA) – GC: Chad Young*• Metal/high‐k, “oxide electronics”, multiferroics, Ge MOS, III‐V‐MOS, graphene,…• Tutorial: Michelle Simmons (remotely) on a Si quantum computer• “Growth and Characterization of Silicene, Germanene and other 2D layered materials”• Nicollian Award: Heng Wu (Purdue) for junctionless MOSFETs on GeOI

• 2014 ‐ The Catamaran – GC: Alex Demkov• Metal/high‐k, oxide electronics, Ge MOS, III‐V‐MOS, SIC MOS, graphene,2D Materials…• Tutorial: Perrine Batude on 3D monolithic integration• “Dielectric/III‐V Interfaces with Nitridation Interlayer for GaN Power Electronics” • Nicollian Award: “Aaron” Barton (UTD) on HfSe2 2D TMDs by MBE

• 2015 – Key Bridge Marriot (Arlington VA) – GC: Peide Ye• 2D Materials, Metal/high‐k, Ge MOS, III‐V‐MOS, Cross‐bar memory, work function control,

reliability…• Tutorial: Iuliana Radu on Spin Logic• “Silicon at the two‐dimensional limit: the debut of the silicene transistor”• Nicollian Award: Julien Borrel (STMicroelectronics) for AC impact of dielectric insertions in

contacts…

© 2019 R.M.Wallace 30** Postdoc who eventually became a SISC General Chair* Student who eventually became a SISC General Chair

A sample of SISC “recent” notable topics/papers• 2016 – The Catamaran – GC: Valeri Afanas’ev

• Metal/high‐k, Ge MOS, III‐V‐MOS, VO2 MIT devices, ReRAM, reliability…• Tutorial: Tom Theis on materials, devices, and circuit architectures for future electronics• “Material Innovation Ferroelectric Hafnium Oxide: Towards Cheaper Memories, Steeper Slopes

and New Value Adders for HKMG”• Nicollian Award: Chris Smyth (UT‐Dallas) for contacts on WSe2: interface chemistry and band

alignment• 2017 – Bahia Resort Hotel– GC: Chris Hinkle*

• Metal/high‐k, “oxide electronics”, multiferroics, Ge MOS, III‐V‐MOS, graphene,…• Tutorial: Lars Samuelson on semiconductor nanowires• “Emerging Memories:High Density Integration Challenges”• Nicollian Award: Mahmut Sami Karvik (UCSD) on ultra‐low defect density for HfO2/Ge via Al gettering gate

• 2018 ‐ The Catamaran – GC: Matthias Passlack• Metal/high‐k, oxide electronics, Ge MOS, III‐V‐MOS, SIC MOS, graphene,…• Tutorial: Philippe Vereecken on solid state batteries• “Quasi‐Static Negative Capacitance (QSNC): Science Fact or Science Fiction?” • Nicollian Award: Guanyu Zhou (UT‐Dallas) on High Mobility Helical Tellurium Field Effect

Transistors

• 2019 – Bahia Resort Hotel– GC: Paul McIntyre (50th SISC!)• Metal/high‐k, Ge MOS, III‐V‐MOS, Cross‐bar memory, work function control, reliability…• Tutorial: Jeff Welser on Quantum Computing• Nicollian Award: ??????

© 2019 R.M.Wallace 31* Student who eventually became a SISC General Chair

Documents

5Oth SISC Session”• Nicollian Award: MiaomiaoWang (Yale) for tunneling spectroscopy of traps in high‐k MOS • 2005 –Key Bridge Marriot (Arlington VA) –GC: Eric Vogel •