50 Years of Power Semiconductor Production in · PDF fileDatasheets available on 1 50 Years of Power Semiconductor Production in Lincoln Welcome to this the latest edition of the Dynex

Datasheets available on www.dynexsemi.com 1

50 Years of PowerSemiconductor Production inLincolnWelcome to this the latest edition of the Dynex Semiconductor shortform catalogue, published as wecelebrate more than 50 years of semiconductor device production in Lincoln, England. Our semicon-ductor operations were first established in 1956 when British Thomson Houston Ltd (BTH) purchasedland and buildings in Lincoln. BTH was a subsidiary of the Associated Electrical Industries Group andoperated world leading semiconductor research and manufacturing units in the heart of England atRugby and Leicester. Following the successful development of new silicon semiconductor power devicetechnologies, and responding to a growing market demand for power electronic equipment, BTH haddecided to move to new premises in order to expand its production and selected Lincoln UK for itsmain production location.Throughout the past 50 years our operations at Lincoln have remained the centre for silicon highpower semiconductor devices, and subsequently silicon on sapphire, product design, development andmanufacture. Beginning with the transfer of know how from BTH, the Lincoln operation has acted as amagnet, capturing the best in power semiconductor technology from other well-known groups includingAEI, GEC, Marconi and SGS-Thomson.

· 1956 BTH established a semiconductor manufacturing facility at Lincoln· 1957 Production commenced in Lincoln· 1963 First UK fully diffused thyristors produced at Lincoln.· 1963 Name changed to Associated Electrical Industries (AEI)· 1966 Transfer of semiconductor research team from AEI Rugby· 1975 Transfer of semiconductor activities from the GEC Central Research facility to Lincoln· 1979 First HVDC thyristors in production (56mm)· 1980 Name changed to Marconi Electronic Devices Ltd· 1981 Second facility opened at Doddington Road, Lincoln· 1983 First GTO thyristors in production on 75mm silicon· 1984 First HVDC thyristors in production on 100mm silicon· 1985 Silicon-on sapphire IC products in production· 1989 Acquired the high power semiconductor activity of SGS-Thomson, France· 1990 Name changed to GEC Plessey Semiconductors· 1996 New Power semiconductor wafer fabrication facilities established at Doddington Road· 2000 Lincoln Business acquired by Dynex Power Inc of Canada· 2007 50th year of semiconductor production in Lincoln

Today as Dynex Semiconductor Ltd, a wholly owned subsidiary of Dynex Power Inc., we are proud tohave maintained and continued to develop our operations in Lincoln as an independent supplier ofspecialist high power semiconductor, silicon-on-sapphire, and power electronic products. From ourbase in Lincoln we have designed, developed and manufactured products for use in every corner of theworld and beyond.We have found Lincoln a very successful location, have benefited from many years of local servicefrom our highly experienced local work force, and from the support of a strong group of local suppli-ers.If you are new to Dynex, I would invite you to join the growing number of customers that we haveserved over the past 50 years, and benefit from the depth and breadth of experience and knowledgethat our products will bring to your business.For our existing customers, we thank you for using Dynex. We are pleased to continue to serve youand hope that you may grow and prosper with Dynex in the future.

With my very best regards

Paul TaylorChief Executive OfficerDynex Semiconductor Ltd

Datasheets available on www.dynexsemi.com2

Contents

50 Year Anniversary 1

Symbols and Definitions 3

Introduction 4

Powerline IGBT Modules

1200V IGBT Modules

Bi-directional switches, choppers, dual switches, halfbridges and single switches 5

1700V IGBT ModulesBi-directional switches, choppers, dual switches, halfbridges and single switches 6

3300V IGBT ModulesChoppers, dual switches, half bridges and singleswitches 7

4500V IGBT ModulesSingle switches 7

6500V IGBT ModulesSingle switches 7

IGBT and FRD Die 7

Powerline FRD Modules

1200V FRD ModulesDual Diodes, Series Pair Diodes, Single Diodes and

Triple Diodes 8

1700V FRD ModulesSeries Pair Diodes and Single Diodes 8

1800V FRD ModulesDual Diodes and Triple Diodes 8

3300V FRD ModulesDual Diodes and Series Pair Diodes 9

4500V and 6500V FRD ModulesDual Diodes 9

Custom Module Design Capability 9

Phase Control Thyristors

i2 Ion Implant Types - Disc Devices 10

Standard - Disc Devices 11

Pulsed Power Thyristors

Pulsed Power Thyristors 12

Pulsed Power Capability 12

Rectifier Diodes

Disc Devices 13

Gate Turn-off Thyristors

Disc Devices - Asymmetric Types 14

Disc Devices - Reverse Blocking Types 14

Gate Turn-off Thyristor, Snubber and FreewheelSelection Chart 14

Fast Recovery Diodes

Disc Devices 15

Space and Radiation Hard Products

Overview 15

Package Outlines

IGBT Modules 16-17

FRD Modules 18

Bipolar Disc / Puk Types 19-21

Power Assemblies

Overview including Assemblies, AC Switches,Heatsinks and Sub-contract Partnerships 22-23

Contact Us

List of Dynex sales offices, distributors andrepresentatives 24-27


Symbols and Definitions

CS Snubber capacitance.dI/dt Critical rate of rise of on-state/forward current.dIFG/dt Rate of rise of positive gate current.dIGQ/dt Rate of rise of reverse gate current (GTO).dIT/dt Critical rate of rise of on-state current (GTO).dV/dt Critical rate of rise of off-state voltage.dIVD/dt Rate of rise of off-state voltage (GTO).EOFF Turn-off energy loss.Erec Reverse recovery energy.Esw(TOT) Total switching energy.Fm Clamping force/mounting torque.I2t I

2t value.

IC Collector current.IC(PK) Peak collector current.IDRM On-state leakage current (thyristor).IF Forward current (diode).IF(AV) Mean forward current (diode).IFM Peak forward current (diode).IF(RMS) RMS forward current (diode).IFSM Single cycle surge current (diode),

(10ms half sinewave).IG(ON) Gate turn-on current (GTO).IGT Gate trigger current.IRMS RMS line current.IPK Peak current.IRRM Peak reverse recovery current.IT(RMS) RMS on-state current (thyristor).IT On-state current.IT(AV) Mean on-state current (thyristor).ITCM Maximum repetitive controllable current (GTO).ITSM Single cycle surge current (thyristor),

(10ms half sinewave).PG Gate power dissipation.PG(AV) Mean gate power dissipation.PGM Peak gate power dissipation.Qr Recovered charge.Qrr Reverse recovery charge.rT On-state/forward slope resistance.Rth(j-c) Thermal resistance – junction to case.Rth(j-hs) Thermal resistance – junction to heatsink.Rth(j-w) Thermal resistance – junction to water.

Tc Case temperature.tgq Gate controlled turn-off time.tq Turn-off time.trr Reverse recovery time.Tvj Virtual junction temperature.Twater Water temperature.VCE(sat) Collector-emitter saturation voltage (IGBT).VCES Collector-emitter voltage (IGBT).VDRM Repetitive peak off-state voltage.VDSM Non-repetitive peak off-state voltage.VF Forward voltage (diode).VFM Peak forward voltage (diode).Visol Isolation voltage.VGT Gate trigger voltage.VR Reverse voltage.VRRM Repetitive peak reverse voltage.VRSM Non-repetitive peak reverse voltage.VT On-state voltage.VTM Peak on-state voltage.VTO Threshold voltage (diode).VT(TO) Threshold voltage (thyristor).


Introduction

Dynex Semiconductor,Lincoln, UK, is a respectedand trusted supplier of highpower semiconductorcomponents andsubsystems. Dynex’sproducts are used in a widerange of applicationsworldwide, including railwaypropulsion and auxiliaryequipment, industrial motordrives, marine propulsion,aerospace power systems,power transmission anddistribution, inductionheating and renewableenergy sources.

Dynex has over 50 yearsexperience in helpingcustomers make efficientuse of power.

Dynex’s powersemiconductor businesswas established in Lincoln inthe mid 1950s as AEISemiconductors Ltd. At thattime the businessintroduced some of the firstsilicon based powersemiconductor componentsin the world. Over theintervening years thebusiness acquired thepower semiconductorinterests, technologies andproducts of formercompetitors such as GEC,SGS-Thomson, Alstom andMarconi Electronic DevicesLtd. (MEDL).

Expertise in componentspecification, design andmanufacture.

Dynex’s product portfoliooffers a comprehensivechoice including IGBT andFRD modules, phase controlthyristors, rectifier and fastrecovery diodes, fast turn-offthyristors, GTO thyristors,clamps, heatsinks andpower assemblies.

An independent source ofsilicon.

Dynex offers a trulyindependent source ofpower bipolar and IGBTwafer technology. Weencourage potentialcustomers to visit ourfacilities and meet ourengineering staff.

IGBTs and FRDsPowerline IGBT modulesare built with European stylefootprints from 107x62mm to190x140mm. Several circuitconfigurations are availableto meet the needs of systemdesigners. These includebi-directional, chopper, dual,half-bridge and single switchconfigurations with voltageratings from 1200V to6,500V and current ratingsfrom 100A to 3,600A.

Incorporating the latestsilicon designs and moduleconstruction techniques,Powerline IGBT productsmeet the most stringentperformance and reliabilityrequirements. Modules areoffered with copper or MetalMatrix Composite (MMC)baseplates to suit thethermal cyclingrequirements of differentapplications.

To complement the IGBTsDynex has a family of FastRecovery Diode Modulesrated from 1200V to 6,500V.Available configurationsinclude dual, single, seriespair and triple diodes.

Dynex also offer a custommodule design capability forcustomers looking for morethan just a standard module– see page 9 for moreinformation.

Thyristors, GTOs andDiodesDynex manufacture acomprehensive range ofPhase Control Thyristors(SCRs), Pulsed PowerThyristors, Rectifier Diodes,Asymmetric and Fast Turn-off Thyristors, Gate Turn-offThyristors (GTOs) and FastRecovery Diodes. Voltagesrange from 600V to 8500Vfor high voltage applications.Average current ratingsrange from a few hundredamps to 11,000A. Dynexhas recently introduced thefirst i2 ion implant phasecontrol thyristor (SCR)products. The i2 productshave enhanced currentratings, better VTM/tq tradeoffs and extended voltagecapability above 8500V.Dynex rectifier diodes willalso be upgraded via i2

technology.

Power AssembliesThe Power ElectronicAssemblies Group provide acomplete design and buildservice utilising the skillsand experience of Dynex’spower electronics,mechanical and electricalengineers who can providethe complete solution tocustomer requirements,including protection andcontrol electronics. Dynexengineers have directaccess to the company’sapplication, test andproduction design personnelto offer customers theoptimum solution and our3D design capabilityensures right first timedesigns. The group alsooffer a completerefurbishment and repairservice for the electronicpower assembliespreviously supplied not onlyby Dynex, but also othermanufacturers.

Quality AssuranceAs a leading supplier of highpower semiconductordevices and powerassemblies, Dynex operatesa total quality managementsystem, designed to providecustomers with productsand services of the higheststandard. The system is aprocess based approachfocusing on meetingcustomer’s requirements bya programme of continualimprovement of ourtechnologies, processesand facilities.

Dynex will contribute to thepreservation of theenvironment by establishing,implementing andcontinually improving theenvironmental managementsystem as an integral part ofgood business practice.

Dynex Semiconductor holdsaccreditation for the QualityManagement Systemsstandard ISO 9001:2000and the EnvironmentalManagement Systemsstandard ISO 14001:2004.

Dynex has also issued astatement of generalcompliance to the EuropeanUnion’s directive on the“Restriction of HazardousSubstances Directive”(RoHS). A copy of thisstatement and ISOcertificates can be found onthe company’s website atthe bottom ofwww.dynexsemi.com/corporate/company/



1200V IGBT Modules

Notes:1. VCE(SAT) is measured across both arms of the bi-directional switch.2. IGBT module outlines and circuit configurations are shown on pages 16-17.

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1700V IGBT Modules

Note:1. VCE(SAT) is measured across both arms of the bi-directional switch.2. IGBT module outlines and circuit configurations are shown on pages 16-17.

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3300V IGBT Modules

6500V IGBT Modules

4500V IGBT Modules

Note:1. IGBT module outlines and circuit configurations are shown on pages 16-17.

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IGBT and FRD DieNaked die are available. Please refer to factory for details.


1200V Diodes

1700V Diodes

1800V Diodes

Powerline FRD Modules(for use with IGBT Modules)

Notes:1. FRD module outlines and circuit configurations are shown on page 18.

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Powerline FRD Modules(for use with IGBT Modules)

Custom Module Design Capability

Notes:1. FRD module outlines and circuit configurations are shown on page 18.

3300V Diodes

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A-33MXP001MFD 0033 001 07 002 002 5.2 5 59 011 612 P 37x041 CiSlAA-33MXP002MFD 0033 002 07 004 004 5.2 02 091 022 801 P 37x041 CiSlAA-33MXP004MFD 0033 004 07 008 008 5.2 08 054 055 45 P 37x041 CiSlA

epyTdradnatS-sedoiDriaPseireSF-33MXP001MFD 0033 001 86 002 002 9.2 5 56 56 291 P 37x041 CiSlAF-33MXP002MFD 0033 002 86 004 004 9.2 02 521 031 69 P 37x041 CiSlAF-33MXP004MFD 0033 004 86 008 008 9.2 08 003 003 84 P 37x041 CiSlA

Transportation, power generation and industry are all benefiting from Dynex high reliability IGBT module technology.Many applications use standard products but some require custom solutions. Dynex has a strong and very experi-enced module design team and will be happy to offer custom IGBT or diode modules to those customers with non-standard requirements. This may be a simple variant of the standard module, perhaps with other combinations of die,or a full custom design. Please ask customer services for more details.



Disc DevicesrebmuNtraP

V=** MRD 001/

mumixaMV MRD /V MRR

)V(

.xaMI MRD /I MRR

)Am(

I )VA(TT@ c =

C°06)A(

I )SMR(TT@ c =

C°06)A(

I MSTVR 0=

)Ak(

I2tVR 0=

AM( 2 )s

td/Vd

)sμ/V(

.per-noNtd/Id

)sμ/A(

R )c-j(ht

)W/C°(

R )sh-c(ht

)W/C°(

V )OT(TT@ jv

)5etoNeeS(

)V(

rTT@ jv

)5etoNeeS(

m( ΩΩΩΩΩ )

T jv

)C°(

eniltuOepyTedoC

V0022otpU22G0801RCD 0022 05 3801 1071 4.41 40.1 0051 005 8620.0 2700.0 9.0 983.0 521 G#22F0381RCD 0022 001 5381 0882 5.42 00.3 0051 005 1710.0 400.0 98.0 1791.0 521 F

22L0962RCD 0022 002 0962 5224 83 22.7 0051 004 7110.0 5200.0 59.0 8231.0 521 L22C0682RCD 0022 002 5582 5844 0.83 22.7 0051 004 1010.0 5200.0 59.0 8231.0 521 C22Y0193RCD 0022 002 0193 2416 45 85.41 0051 003 53800.0 200.0 519.0 590.0 521 Y22V0604RCD 0022 002 5604 5836 0.45 85.41 0051 003 64700.0 200.0 519.0 590.0 521 V22W0545RCD 0022 002 0425 0328 5.27 03.62 0051 005 13600.0 4100.0 48.0 4370.0 521 W

V0082otpU82G069RCD 0082 05 569 6151 0.31 58.0 0051 005 8620.0 2700.0 8.0 6557.0 521 G

#82F0461RCD 0082 001 0461 0852 9.12 04.2 0051 003 1710.0 400.0 829.0 952.0 521 F82L0842RCD 0082 002 0842 6983 52.53 12.6 0051 003 7110.0 5200.0 479.0 5661.0 521 L82C0362RCD 0082 002 0362 0314 52.53 12.6 0051 003 1010.0 5200.0 479.0 5661.0 521 C82Y0563RCD 0082 002 0563 3375 5.05 47.21 0051 003 53800.0 200.0 59.0 4111.0 521 Y82V0873RCD 0082 002 0873 8395 5.05 47.21 0051 003 64700.0 200.0 59.0 4111.0 521 V82W0194RCD 0082 002 0194 0177 0.56 31.12 0051 005 13600.0 4100.0 9.0 7590.0 521 W

V0024otpU24G087RCD 0024 001 087 5221 5.01 55.0 0051 004 8620.0 2700.0 350.1 3448.0 521 G

#24F0531RCD 0024 001 0531 0212 51.81 56.1 0051 004 1710.0 400.0 0.1 5114.0 521 F24C0512RCD 0024 002 0512 7733 0.92 02.4 0051 004 1010.0 5200.0 9.0 562.0 521 C24Y0392RCD 0024 002 0392 2064 6.04 42.8 0051 004 53800.0 200.0 89.0 891.0 521 Y24V0303RCD 0024 002 0303 0674 6.04 42.8 0051 004 64700.0 200.0 89.0 891.0 521 V24B0973RCD 0024 002 0473 5785 5.35 13.41 0051 004 700.0 4100.0 1 3621.0 521 B24W0014RCD 0024 002 0014 5906 5.35 13.41 0051 004 13600.0 4100.0 0.1 3621.0 521 W

V0025otpU25G096RCD 0025 001 096 4801 54.9 54.0 0051 003 8620.0 2700.0 570.1 521.1 521 G25F0811RCD 0025 051 0811 4581 9.51 62.1 0051 003 1710.0 400.0 50.1 765.0 521 F25C0591RCD 0025 003 0591 0603 52.62 54.3 0051 003 1010.0 5200.0 1.1 643.0 521 C25Y0362RCD 0025 002 0362 1314 7.63 37.6 0051 004 53800.0 200.0 1.1 4142.0 521 Y25V0272RCD 0025 002 0272 0724 7.63 37.6 0051 004 64700.0 200.0 1.1 4142.0 521 V25B0843RCD 0025 003 0343 8835 94 00.21 0051 004 700.0 4100.0 89.0 6881.0 521 B25W0463RCD 0025 003 0553 6755 0.94 00.21 0051 004 13600.0 4100.0 89.0 6881.0 521 W

V0056otpU56J094RCD 0056 001 094 077 6.6 22.0 0051 002 9730.0 2700.0 801.1 746.1 521 J56G095RCD 0056 001 595 539 6.6 22.0 0051 002 8620.0 2700.0 801.1 746.1 521 G56N098RCD 0056 002 398 3041 0.51 31.1 0051 002 2020.0 400.0 1180.1 5959.0 521 N56F059RCD 0056 002 749 8841 51 31.1 0051 002 1710.0 400.0 1180.1 5959.0 521 F56L0751RCD 0056 003 8651 6642 0.22 24.2 0051 003 7110.0 5200.0 2.1 5.0 521 L56Y0222RCD 0056 003 0222 7843 0.03 05.4 0051 003 53800.0 200.0 732.1 8153.0 521 Y56B0882RCD 0056 003 5482 9644 5.83 55.7 0051 003 700.0 4100.0 31.1 462.0 521 B56W0592RCD 0056 003 5492 6264 5.83 55.7 0051 003 13600.0 4100.0 31.1 462.0 521 W

V0058otpU58J093RCD 0058 001 783 806 52.5 41.0 0051 002 9730.0 2700.0 3603.1 367.2 521 J58G074RCD 0058 001 764 437 52.5 41.0 0051 002 8620.0 2700.0 3603.1 367.2 521 G58N067RCD 0058 002 067 0911 8.21 38.0 0051 002 2020.0 400.0 342.1 243.1 521 N58F018RCD 0058 002 018 2721 8.21 28.0 0051 002 1710.0 400.0 342.1 243.1 521 F58L0031RCD 0058 003 0031 7302 6.71 55.1 0051 003 7100.0 5200.0 53.1 767.0 521 L58Y0481RCD 0058 003 0481 0982 0.52 31.3 0051 003 53800.0 200.0 3.1 55.0 521 Y58V0191RCD 0058 003 0191 0003 52 31.3 0051 003 64700.0 200.0 3.1 55.0 521 V58B0042RCD 0058 003 0732 7673 5.23 82.5 0051 003 700.0 4100.0 922.1 893.0 521 B



Notes:1. † Products are not available for new designs.2. Rth(j-c) figures given are for double side cooling, dc.3. Rth(c-hs) figures given are for double side cooling.4. Package outline information is given on pages 19-21.5. VT(TO) and rT figures given for high current levels, lower current level figures are given in the product datasheets.6. i2 phase control thyristors are available in 27mm and 35mm nominal height packages.# Refer to Factory.

Disc Devices - Standard TyperebmuNtraP

V=** MRD 001/

V MRD /V MRR

)V(

I MRD /I MRR

)Am(

I )VA(TT@ c =

C°06)A(

I )SMR(T

@ Tc =C°06)A(

I MSTVR 0=

)Ak(

I2tVR 0=

Ak( 2 )s

td/Vd

)sμ/V(

.per-noNtd/Id

)sμ/A(

R )c-j(ht

)W/C°(

R )sh-c(ht

)W/C°(

V )OT(T@T jv

)V(

rT@T jv

m( ΩΩΩΩΩ )

T jv

)C°(

eniltuOepyTedoC

V0041otpU**YS3741RCD 0021-001 052 5314 5946 46 08402 0001 005 5900.0 200.0 428.0 660.0 521 VroY

**TS405RCD 0041-001 03 654 717 8.6 132 0001 007 360.0 20.0 50.1 8.0 521 T**FS2001RCD 0041-001 001 0581 0092 5.23 0825 0001 0001 810.0 300.0 9.0 71.0 521 F

V0081otpU**E027RCD 0081-0021 03 427 0411 8.9 084 0001 007 140.0 810.0 88.0 56.0 521 E

† **GS308RCD 0081-001 05 5401 1461 41 579 0001 0001 230.0 800.0 58.0 83.0 521 G**FS3001RCD 0081-001 001 1151 4732 52.62 0443 0001 0001 220.0 400.0 68.0 52.0 521 F

† **ABS4731RCD 0081-001 051 4962 0324 05 00521 0001 0001 310.0 300.0 29.0 911.0 521 L† **YS4741RCD 0081-001 052 0063 5565 2.16 05781 0001 003 5900.0 200.0 29.0 90.0 521 VroY

**A0895RCD 0081-0021 005 5895 0049 89 00084 0001 052 5600.0 100.0 77.0 50.0 521 MroAV0082otpU

† **ES406RCD 0012-001 03 607 9011 11.8 033 0001 007 140.0 810.0 39.0 766.0 521 E† **GS608RCD 0082-001 05 448 6231 52.11 336 0001 005 230.0 800.0 19.0 56.0 521 G† **ABS5731RCD 0082-001 051 4002 8413 53 0216 0001 005 310.0 300.0 20.1 952.0 521 L

**FS6001RCD 0082-0021 001 5521 1791 5.02 0012 0001 005 220.0 400.0 29.0 4.0 521 F† **YS5741RCD 0082-0021 052 5082 6044 64 00601 0001 003 5900.0 200.0 588.0 191.0 521 VroY† **YS4751RCD 0082-0061 003 9143 0735 5.45 05841 0001 003 5900.0 200.0 388.0 11.0 521 VroY† **WS4951RCD 0082-0061 004 5783 7806 5.26 00591 0001 004 800.0 100.0 49.0 990.0 521 W

**AS3761RCD 0082-0002 005 8805 5997 57 00083 0001 005 5600.0 100.0 28.0 670.0 521 MroAV0083otpU

† **ABS6731RCD 0063-0062 051 1961 5562 52 0213 0001 003 310.0 300.0 1.1 93.0 521 L† **YS6741RCD 0083-0032 052 3222 2943 52.63 0576 0001 003 5900.0 200.0 30.1 23.0 521 VroY

V0084otpU† **YS5751RCD 0024-0062 003 6352 3893 44 0869 0001 003 5900.0 200.0 49.0 42.0 521 VroY† **WS5951RCD 0024-0062 004 0203 5474 57.35 00441 0001 004 800.0 100.0 30.1 91.0 521 W† **F0501RCD 0024-0063 051 1501 0561 51 05211 0001 002 220.0 400.0 1.1 75.0 521 F

**AS4761RCD 0024-0063 005 0493 0916 76 05422 0001 003 5600.0 100.0 59.0 831.0 521 MroA† **GS818RCD 0084-0062 05 925 038 5.7 082 0001 001 230.0 800.0 4.1 7.1 521 G† **F048RCD 0084-0024 001 048 0231 5.21 087 0001 003 220.0 400.0 3.1 29.0 521 F

V0025otpU† **YS6751RCD 0025-0004 003 2612 6933 04 0008 0001 003 5900.0 200.0 50.1 43.0 521 VroY† **WS6951RCD 0025-0004 004 6582 7844 64 00601 0001 003 800.0 100.0 0.1 522.0 521 W

**AS5761RCD 0025-0004 005 3083 0295 5.26 00591 0001 003 5600.0 100.0 0.1 51.0 521 MroAV0056otpU

† **GS028RCD 0056-0085 05 783 806 6 081 0001 001 230.0 800.0 6.1 5.3 521 G† **FS0201RCD 0056-0085 051 046 5001 7.01 265 0001 001 220.0 400.0 2.1 29.1 521 F† **FS1201RCD 0056-0006 051 048 0231 41 089 0001 001 220.0 400.0 2.1 89.0 521 F† **Y0621RCD 0056-0006 003 0621 0891 8.02 0812 0001 003 5900.0 200.0 2.1 81.1 521 VroY† **Y0661RCD 0056-0006 003 5661 0062 82 0293 0001 003 5900.0 200.0 2.1 16.0 521 VroY


Pulsed Power Thyristors

Disc Devices

Notes:1. Rth(j-c) figures given are for double side cooling, dc.2. Rth(c-hs) figures given are for double side cooling.3. Please contact Customer Services for the availability of clamps for these devices.4. Package outline information is given on pages 19-21.

The PT family of PulsePower Thyristors (PPTs) isbased on Dynex’s GTOtechnology and is designedfor long term stability underD.C. voltages. Thestructures are resistant tocosmic ray induced failuresat normal working voltages.

Dynex’s Pulse PowerThyristors may be used toconnect a source of storedenergy, such as a capacitor,to a load, or to bypass andprotect the load in the caseof a crowbar circuit. In thesepulsed power applicationswhere the rate of rise ofcurrent is very fast, thepulse power switch is actingas a closing switch andordinary phase controlthyristors (SCRs) are likelyto fail due to the high di/dtexperienced.

Pulse Power Thyristors mayalso be required to act in theopening switch mode. Suchapplications may includethose where voltage isreapplied to the pulse powerswitch shortly after closingand the switch needs tohave recovered blockingcapability or the transferredenergy needs to becontrolled. In theseapplications, the switchneeds to have turn-offcapability to reduce thenatural turn-off time (tq) ofthe device. The device isoperated in GTO mode withthe appropriatecommutating gate drive.

Dynex has been supplyingthyristors used as crowbarsto protect other high powercircuitry in railwaypropulsion units and the likefor many years. In addition,Dynex has been a supplierof devices used inequipment for thesterilization of foods byintense light or x-rays sincethe late 1980s. Theseapplications operate atmoderate di/dts and can besatisfied with conventionalthyristor solutions.

In the field of ignitronreplacements and weldswitches, Dynex has been aworld leader in theapplication of solid statedevices. Dynex has beeninvolved in the design andmanufacture of assembliesfor the pulse powercommunities on the WestCoast of America and atCERN, Switzerland.

An example of a pulsepower assembly is shownabove. It uses five DynexPT40QPx45 4.5kV SCRdevices and was designedin-house by our powerelectronics design team. Itfeatures optical triggeringand feedback plusbreakover diode protectionof individual thyristors.

For more information onhow Dynex can help withyour pulse power needs,please e-mail us [email protected]

Thyratron replacement pulsed powerassembly

rebmuNtraP V MRD

)V(

V MRR

)V(

I )VA(T @Tc C°08=

)A(

I MST

)Ak(

I2t

Ak( 2 )s

td/Vd

)sμ/V(

td/Id Iot KP

)Ak()sμ/Ak(

V )OT(TT@ jv)V(

rTT@ jv

m( ΩΩΩΩΩ )

R )c-j(ht

)W/C°(

R )sh-c(ht

)W/C°(

T jv

)C°(

eniltuOepyTedoC

V0054otpU33GS003RCA 0033 61 394 5.6 081 0003 2 - 91.1 18.0 240.0 810.0 521 G

54xPQ04TP 0054 61 067 31 548 002 5 02 4.1 251.0 330.0 800.0 521 P54xHQ06TP 0054 61 0001 5.22 0252 571 01 04 5.1 76.0 310.0 300.0 521 H54xWQ58TP 0054 61 0761 73 0586 002 22 09 54.1 3.0 10.0 100.0 521 W


Rectifier Diodes

Disc Devices

Notes:† This product is an avalanche diode.1. Rth(j-c) figures given are for double side cooling, dc.2. Rth(c-hs) figures given are for double side cooling.3. Pins and tags may be present on some diode packages.4. Package outline information is given on pages 19-21.

rebmuNtraP

V=** MRR 001/

V MRR

)V(

I MRR

)Am(

I )VA(FT@ c =

C°57)A(

I )SMR(FT@ c =

C°57)A(

I MSFVR 0=

)Ak(

I2tVR 0=

Ak( 2 )s

R )c-j(ht

)W/C°(

R )sh-c(ht

)W/C°(

V OTT@ jv

)V(

rTT@ jv

m( ΩΩΩΩΩ )

T jv

)C°(

eniltuOepyTedoC

V006otpU**TS105SD 006-001 03 049 7741 11 506 70.0 20.0 7.0 52.0 571 T

**GF33DR 006-001 05 7993 8726 57.64 03901 230.0 800.0 6.0 2780.0 002 G**FF34DR 006-001 05 6644 4107 5.15 06231 220.0 400.0 6.0 4150.0 002 F**VF56DR 006-001 051 54711 05481 261 000231 5700.0 200.0 6.0 5220.0 002 V

V0081otpU**TS205SD 0041-001 03 668 0631 8 023 70.0 20.0 67.0 23.0 571 T

**YS1012SD 0051-002 001 0187 86221 97 00213 5900.0 200.0 76.0 830.0 091 VroY**36BND 0051-006 06 4975 1019 75 00261 310.0 300.0 57.0 640.0 091 roDA002OD

684BC**FS2002SD 0081-002 05 6992 7074 52.14 0058 220.0 400.0 47.0 880.0 571 F**YS2012SD 0081-002 001 4566 25401 001 00005 5900.0 200.0 57.0 5140.0 571 VroYV0082otpU

**16BND 0052-0061 001 8343 1045 23 0215 310.0 300.0 97.0 51.0 571 roDA002OD684BC

**YS3012SD 0062-0061 051 8875 6709 18 00033 5900.0 200.0 57.0 360.0 571 VroY**FS4002SD 0082-0041 05 2732 6273 52.13 0884 220.0 400.0 28.0 61.0 571 F**MS4092SD 0082 002 0978 00831 59 00154 85500.0 31100.0 9096.0 9830.0 061 M

V0053otpU**GS4011SD 0003-0041 05 9481 4092 02 0002 230.0 800.0 76.0 13.0 571 G

**46BND 0053-0003 001 9103 1474 72 5463 310.0 300.0 68.0 2.0 571 roDA002OD684BC

V0084otpU**GS7011SD 0004-0042 05 1211 1671 51 5211 230.0 800.0 57.0 44.0 051 G**FS7002SD 0004-0042 57 4951 4052 52 5213 220.0 400.0 28.0 92.0 051 F**YS6012SD 0004-0082 052 0383 6106 5.26 00691 5900.0 200.0 57.0 811.0 051 VroY**AS6092SD 0004-0053 002 1565 7788 38 00543 5600.0 100.0 87.0 3670.0 051 A

† **ES214ZSD 0044-0004 02 912 443 578.1 5.71 590.0 20.0 21.1 57.3 051 E**YS7012SD 0054-0043 052 9233 9255 5.25 00831 5900.0 200.0 77.0 761.0 051 VroY

**56BND 0054-0063 051 0952 8604 13 0084 310.0 300.0 48.0 91.0 051 roDA002OD684BC

**FS9002SD 0084-0023 57 8241 2422 5.02 5212 220.0 400.0 48.0 383.0 051 FV0005otpU**GS9011SD 0005-0023 05 019 0341 5.11 066 230.0 800.0 88.0 786.0 051 G

V0006otpU**AS7092SD 0025-0044 002 4194 5177 07 00542 5600.0 100.0 28.0 111.0 051 A**GS2111SD 0006-0004 57 118 4721 5.01 565 230.0 800.0 9.0 39.0 051 G**FS2102SD 0006-0044 57 0231 3702 5.61 5241 220.0 400.0 0.1 24.0 051 F


Gate Turn-off Thyristors

Disc Devices - Asymmetric GTO

Notes:1. Package outline information is given on pages 19-21.2. Please consult Customer Services for availability of clamps for these devices.

Disc Devices - Reverse Blocking GTO

GTO Snubber/Freewheel Diode Selection Chart

traPrebmuN

V=** MRD 001/

V MRD

)V(

V MRR

)V(

I MRD

)Am(

I MCT

)A(

I )SMR(TT@ sh

=Cº08)A(

I MST

)Ak(

Id T td/

)sμ/A(

Vd D -/td

)sμ/V(

V MT Ita )NO(G Ita TT@ j 521= ºC

)A()A()V(

CS

)Fμ(

t qg Idta qg td/

)sμ/A()sμ(

E FFO

)Jm(

R )sh-j(ht

)W/Cº(

R )sh-c(ht

)W/Cº(

eniltuOepyTedoC

V0031otpU**ES403TGD 0031 61 52 007 093 0.4 005 005 2.2 0.2 006 0.2 9.0 51 053 570.0 810.0 E

V0081otpU**ES503TGD 0081 61 05 007 373 0.4 005 005 5.2 0.2 006 5.1 5.31 51 055 570.0 810.0 E

V0052otpU**EA603GD 0052 61 05 006 053 5.3 003 0001 57.2 0.2 006 0.1 9.21 51 0001 570.0 810.0 E**PB604GD 0052 61 05 0021 587 0.8 003 0001 5.2 5.1 0001 0.1 5.51 51 0032 140.0 900.0 P**HB646GD 0052 61 001 0052 0631 0.81 003 0001 6.2 0.6 0002 0.2 0.91 04 0004 810.0 600.0 HV0054otpU**PB804GD 0054 61 05 0001 005 0.7 003 0001 5.3 0.4 0001 0.1 5.51 03 0214 140.0 900.0 P**HB846GD 0054 61 001 0002 0711 0.61 003 0001 2.3 0.7 0002 0.2 0.22 04 00001 810.0 600.0 H**XB857GD 0054 61 001 0003 5631 0.61 003 0001 0.4 0.8 0003 0.6 8.22 04 0036 6410.0 6300.0 X**WB858GD 0054 61 001 0004 0581 0.02 003 0001 0.4 0.01 0004 0.6 5.72 04 00531 110.0 1200.0 W**WD858GD 0054 61 001 0003 0271 0.02 003 057 58.3 0.01 0003 0.4 5.82 04 00521 110.0 1200.0 W

rebmuNtraP

V=** MRD 001/

V MRD

)V(

V MRR

)V(

I MRD

)Am(

I MCT

)A(

I )SMR(TT@ sh

Cº08=)A(

I MST

)Ak(

Id T td/

)sμ/A(

Vd D -/td

)sμ/V(

V MT Ita )NO(G Ita TT@ j 521= ºC

)A()A()V(

CS

)Fμ(

t qg Idta qg td/

)sμ/A()sμ(

E FFO

)Jm(

R )sh-j(ht

)W/Cº(

R )sh-c(ht

)W/Cº(

eniltuOepyTedoC

V0031otpU**ER403TGD 0031 0031 52 007 093 0.4 005 005 2.2 0.2 006 0.2 9.0 51 053 570.0 810.0 E

V0081otpU**ER503TGD 0081 0081 05 007 373 0.4 005 005 5.2 0.2 006 5.1 5.31 51 055 570.0 810.0 E

V0054otpU**PRB804TGD 0054 0054 05 008 - 0.6 003 0001 7.4 0.4 008 0.2 5.51 03 0003 140.0 900.0 P

V0056otpU**ACB904TGD 0056 0056 001 0051 - 0.3 0001 003 0.4 0.4 002 0.2 0.81 02 0052 640.0 900.0 P

rebmuNtraP edoiDrebbunS edoiDleehweerFES403TGD - 154FDER403TGD - 154FDES503TGD - 154FDER503TGD - 154FD

EA603GD - ES5208FSDPB604GD ES5208FSD ES5208FSDPB804GD KS5408FSD KS5408FSD

PRB804TGD KS5408FSD KS5408FSDACB904TGD GS06011FSD GS06011FSD

HB646GD ES5208FSD 150FDHB846GD KS5408FSD FS54502FSDXB857GD KS5408FSD 58BFDMWB858GD KS5408FSD VS54512FSDWD858GD KS5408FSD VS54512FSD


Disc Devices

Notes:1. Rth(j-c) figures given are for double side cooling, dc.2. Rth(c-hs) figures given are for double side cooling.3. Pins and tags may be present on some diode packages.4. Package outline information is given on pages 19-21.

Fast Recovery Diodes

The Dynex facility is unique in the United Kingdom in that ithas the capability of complete SOS componentmanufacturing on one site. This facility is a world leader inthe space components market with some 20 yearsexperience in the supply of products into spaceprogrammes.

SOS is a mature technology with a long history ofsuccessful uses in space programmes. Comprehensiveradiation data is available on most Dynex Space productsand most are submitted to total dose radiation testing. Thequality system meets all the requirements of ESA9000.There is an increasing demand for space systems that cansurvive radiation effects and ensure continued operation.

Of all the current silicon based semiconductor technologies,only SOS offers the necessary resistance to the hazards ofsingle event upset, transient and total dose radiation.

Space and Radiation Hard Products

www.dynexsemi.com/products/sos

rebmuNtraP

V=** MRR 001/

V MRR

)V(

I MRRT@ jv

)Am(

I )VA(FT@ c

=Cº56)A(

I )SMR(FT@ c

=Cº56)A(

I MSFVR =

0

)Ak(

I2tVR 0=

Ak( 2 )s

V OTT@ jv

)V(

rTT@ jv

m( ΩΩΩΩΩ )

R )c-j(ht

)W/Cº(

R )sh-c(ht

)W/Cº(

T jv

)Cº(

Qr

)Cμ(

t rr

)sμ(

VF Ita F

)A()V(

eniltuOepyTedoC

V0061otpU**154FD 0061-006 001 592 345 5.3 52.16 6.1 5.1 70.0 20.0 521 52 22.1 56.2 006 177M

V0052otpU**ES5208FSD 0052-0002 05 056 0201 5.7 182 84.1 8.0 740.0 810.0 051 045 0.5 3.2 0001 GroE

**150FD 0052-0002 001 0941 0432 41 089 1.1 5.0 810.0 300.0 051 008 0.5 58.1 0051 Fro054BCV0054otpU

**KS5408FSD 0054-0004 05 034 086 5.3 52.16 7.1 1.2 840.0 10.0 051 044 70.3 0.4 0001 KroG**FS54502FSD 0054-0004 05 6521 1791 61 0821 63.1 74.0 220.0 400.0 051 0521 0.7 1.2 0081 Fro054BC

**58BFDM 0054-0004 002 0312 0533 02 0002 5.1 53.0 110.0 300.0 051 0022 0.6 2.2 0002 684BC**VS54512FSD 0054-0004 051 0323 0805 02 0002 52.1 5.0 5700.0 200.0 051 0081 0.7 0.2 0003 V

V0006otpU**GS06011FSD 0006-0055 07 004 136 2.4 88 5.1 9.2 230.0 800.0 521 007 0.6 8.3 006 Grob977M

])iS(daR[esoDlatoT 01 26

]yadtib/srorrE[tespUtnevEelgniS 01 11-

mc/nortueN[snortueN 2] 01 51

]s/)iS(daR[tespUtneisnarT 01 21

pUhctaL enummI


Half bridge - PHM

Bi-directional switch - PBM

Package type: P

Nominal weight: 550g

140

3873

1238

4

5

67

3(E2)2(C1)

1(E1C2)

8(C1) 5(C2/E1) 7(E2)4(G1)

6(G2)

3(C2)2(C1)

1(E1/E2)

5(E1) 7(E2)4(G1)

6(G2)

C1 - Aux CollectorE1 and E2 - Aux EmitterG1 and G2 - Gate

124

57

Package OutlinesIGBT Modules

Module Outlines and Circuit ConfigurationsAll dimensions shown in mm unless stated otherwise.

Note:1. Mounting recommendations are given in the application note AN4505 ‘Heatsink Issues For IGBT Modules’ available from ourwebsite.

2(C2)4(C1)C1

G

E1 3(E1) 1(E2)

External connection

External connection

Single switch - NSMPackage type: N

C1 - Aux CollectorE1 - Aux EmitterG - Gate


140

38

130

43

21

G

E1

C1

124

57

Dual switch - DDM

Package type: D

3(C1)

5(E1)

6(G1)

7(C1) 10(E2)

12(C2)

11(G2)

1(E1)

4(E2)

2(C2)

C1 and C2 - Aux CollectorE1 and E2 - Aux EmitterG1 and G2 - Gate


Chopper switch - DCM

3(C1)

5(E1)

6(G1)

7(C1)

1(E1)

4(E2)

2(C2)

140

38

130

13

2412

11

10

7

6

5

124

57

2(C2)1(C1)7(C1)

9(G1)

8(E1) 3(E1) 4(E2)

External connection

External connection

Single switch - FSMPackage type: F

140

38

130

13

24

7 8

9

C1 - Aux CollectorE1 - Aux EmitterG1 - Gate


124

57

Single switch - ESMPackage type: E

C2C1C1

G

E2 E1 E2 E3

External connection

External connection

C3

C1 - Aux CollectorE1 - Aux EmitterG - Gate


140

38190

C1

C2

C3E3

E2

E1C1

E2

G

28.5

57

124

Single switch - BSS

Package type: B

2(E)

3(G)

1 (C)

5(E1) 4(C1)

Nominal weight: 270g105

107

25 36m

ax

62

4

35

12

C1 - Aux Collector, E1 - Aux EmitterG - Gate

48

93

Half bridge - WHS

Package type: W

(C1)3

(E2)2

(E1C2) 1

6(G2)7(E2)

5(E1) 4(G1)E1 and E2 - Aux Emitter, G1 and G2 - Gate


30.18

105

62 48

107

93



Package OutlinesIGBT Modules

Note:1. Mounting recommendations are given in the application note AN4505 ‘Heatsink Issues For IGBT Modules’ available from ourwebsite.

Half bridge - WHS

Chopper - WKS(Upper arm controlled)

Chopper - WLS(Lower arm controlled)

Package type: W

3(C1)2(E2)1(E1C2)

6(G2)7(E2)

5(E1)4(G1)

3(C)2(K)1(A,E)3(K1)2(E2)1(A1C2)

6(G2)7(E2)

5(E1)4(G1)

A - AnodeE1 and E2 - Aux EmitterG1 and G2 - GateK - Cathode


30.18

105

62

107

7

5

4

6

3

1

2

Single switch - XSMPackage type: X

5(C2)7(C1) 3(Aux C)

2(G)

1(Aux E) 6(E1) 4(E2)

External connection

External connection


140

48

130

124

57

Dual switch - GDMPackage type: G


13

24

5

8

9

6

7

10

13038

160140

3(C1)

7(E1)

6(G1)

5(C1) 8(E2)

10(C2)

9(G2)

1(E1)

4(E2)

2(C2)

C1 and C2 - Aux CollectorE1 and E2 - Aux EmitterG1 and G2 - Gate

124

57


Dual arm - FXMPackage type: F

140

38

130

13

24


2(K2)1(K1)

3(A1) 4(A2)

External connection

External connection

External connection for singlediode application

124

57

Dual arm - NXMPackage type: N

2(K2)4(K1)

3(A1) 1(A2)

External connection

External connection



140

38

130

43

21

124

57

Single arm - BXS

Package type: B

2(A) 1 (K)


107

25 36m

ax

62

4

35

12

48

93

Series arm - PXMPackage type: P


140

3873

123

1(K2/A1)2(A2) 3(K1)124

57


Package OutlinesFRD Modules

Triple arm - EXMPackage type: E

C3(K3)C1(K1)

E1(A1) E3(A3)

External connection

External connection

C2(K2)

E2(A2)


140

124

38190

28.5

57

C1

C2

C3E3

E2

E1

Notes:1. Clamping recommendations are given in the application note AN4839 ‘Clamping of Power Semiconductors’ available from our website.

7

5

4

6

3

1

2

Dual arm - XSMPackage type: X

7(K2)7(K1)

6(A1) 4(A2)

External connection

External connection



140

48

130

124

57

Half bridge - WHS

Package type: W


62 48

107

93

2(K2)

1(A1/K1)

3 (A1)


Hole Ø3.6 x 2.0 deep (In both electrodes)

15.0

14.0Ø1.5

Cathode

GateAnode

Nominal weight: 82g

Ø25 nom

Ø25 nom

Ø42 max

Cathodetab

Diode outline has no pin or tag, butsometimes may be present on

some packages

Package type: DO200AD

Gate tube

Cathodeaux.tube

Ø38.0Ø56.0 maxØ63 nom

Cathode

Anode

36 nom

29.5

nom


Ø51 nom


Ø38.0


26.5

25.5

Ø63 nomØ100 nom

Ø63 nom

52

559.6

Cathodeaux.tube

Gatetube

Anode

Cathode


Package type: B

Discs / PuksAll dimensions shown in mm unless stated otherwise.

Hole Ø3.6 x 2.0 deep (In both electrodes)15

.0m

ax

Cathode

GateAnode

Nominal weight: 82g

Ø25.0 max

Ø25.0 max

Ø41.9max

Cathodetab

Package type: CB486

GateAnode

Cathode

Ø1.

5

Ø73.0 maxØ47 nom

Ø47 nom

27.4

625

.86


Cathodeaux.tab


Package type: E (GTO)

Package type: C


Ø48 nom

27.0

25.4

Cathode

Anode


Ø48 nomØ76 max

Package type: CA


Ø63 nomØ102 max

25.6

± 0

.5

Anode


Ø63 nom

CathodeØ89 nom

Package type: CB450

Cathode

Anode

32.9

34.1

Ø63 nomØ92 max



Ø63 nomØ102 max

Ø1.

5

Ø57.0 max

Ø34 nom

Ø34 nom

Cathode

Gate

Anode


27.4

625

.86


Cathodetab

Package type: E (SCR/Diode)

Package type: F (SCR/Diode) Type code: G (SCR/Diode) Package type: H Package type: J


Package OutlinesThyristors and Diodes

CathodeØ120.0 maxØ84.6 nom

Ø84.6 nomAnode

Gate

Ø1.

5

Cathodeaux.tab



35.6

134

.11

Anode

Cathode

Gate

Ø1.

5Cathode

aux.tab

Ø98.9 maxØ62.85 nom

Ø62.85 nom



27.4

625

.86

Ø1.

5

Ø57.0 max

Ø34 nom

Ø34 nom

Cathode

Gate

Anode


35.5

133

.91


Cathodetab



72 max

Ø84.6 nom

27.7

25.5

Anode

Cathode

Gatetube

Cathode aux.tube



Ø84.6 nom

Ø120 max

Package type: W (GTO)


Cathodeaux.tube

Ø38 nomØ56 max

Ø57.5 maxØ63.5 max

Ø38 nomØ51 nomCathode

Anode

27.0

25.5


Gate tube

15.0

max

Nominal weight: 55g

Ø19Ø37.5max

Holes Ø3.6 x 2.0 deep (In both electrodes)

Cathode

Anode

Ø19Ø 42 max

Package type: M771 Package type: M779b

15.0

14

.0

Nominal weight: 55g

Cathodetab

GateØ1.5

Ø19 nom


Cathode

Anode

Ø19 nomØ 42 max


some packages


Ø73 nom

Cathode

Gate

Anode


some packagesNominal weight: 1100g

28.3

25.4

Cathode tab

Ø73 nomØ112.5 max

Ø1.5

Package type: K Package type: L


Holes Ø3.6 x 2.0 deep (In both electrodes)

27.0

25

.4

AnodeØ25 nom

Cathode Ø42 maxØ25 nom



27.0

25.4

Cathode

Anode


Ø34 nom

Ø34 nomØ58.5max

Package type: T (SCR/Diode)Package type: N Package type: P

Anode

Cathode

Gate

Ø1.

5Cathode

aux.tab

Ø98.9 maxØ62.85 nom

Ø62.85 nom



35.5

633

.96

GateAnode

Cathode

Ø1.

5

Ø73.0 maxØ47 nom

Ø47 nom

35.5

133

.91


Cathodeaux.tab


Package type: V (SCR/Diode)

Package type: M (SCR/Diode)

26.0

nom

Cathode

Anode


Cathodetab

Gate


Ø100 nom

Ø100 nomØ148 nom

Ø138.5 nom

Ø1.5


some packages




37.7

34

.39

Cathode

Gate

AnodeØ73 nom

Ø112.5 max


Ø1.5

Ø73 nom

Cathodetab


some packages

Ø100 nom

Gate

Cathode

Anode

35.0

± 0

.5

Ø100 nom

Ø148 nom

Ø138.5

Ø1.

5

2 holes Ø3.6 x 2.0 deep (In both electrodes)

Cathode tab



some packages

Package type: Y (SCR/Diode) Package type: A (SCR/Diode)



63 max

63 max9.6

Cathode aux.tube

Gatetube

CathodeØ70 nom

Anode


Ø112 maxØ66 nom

27.0

25.5

Package type: X


28.3

126

.79

Cathode

Anode

Hole Ø3.6 x 2.0deep (In both electrodes)

Cathodetab

Gate


Ø84.6 nom

Ø84.6 nomØ120 max

Ø120 max

Ø1.5

Package type: W (SCR)


Power Assemblies

In addition to the discreteproduct line, Dynex offers adesign, build andrefurbishment service forpower assemblies throughour Power ElectronicAssemblies group. Thisgroup provides support forcustomers requiring morethan the basicsemiconductor and utilisesthe skills of our powerelectronics, mechanical andelectronic engineers. Theteam has direct access tothe company’s application,test and product designpersonnel to produce theoptimum solution for yourrequirements.

Typical applications forDynex power assembliesinclude:

High power rectificationPulse powerInvertersSoft startsBattery chargersMagnet suppliesResistance weldingswitchesVariable speed drivesGTO gate drive unitsStatic compensation

Dynex also has a range ofair and liquid cooledheatsink and clampingsystems.

AssembliesDynex power electronicsand mechanical engineersare experts in designinghigh quality and highreliability power assembliesfor applications whereoptimised performance isrequired in the harshest ofenvironments.Many factors need to betaken into consideration tomaximise semiconductorperformance in anassembly. Typically theseare; type of heatsink,transient conditions,overloads, ambienttemperature, surface finish(e.g. black anodised) andthe method of cooling onwhich the application relies(air, liquid or phase change).With a wealth of experiencebehind them and using CADsoftware and the vast rangeof bipolar and IGBT powersemiconductor devices andcomponents available, thedesign team are able to

provide customers with asolution which best suitstheir needs.

Typical Dynex assemblydesigns include:

RectifiersStandard diode and thyristorrectifier combinations.

3-phase and dual 3-phase diode rectifierassemblies.3-phase (6 pulse) anddual 3-phase (12 pulse)controlled assemblies.

Inverters/Converters3-phase thyristor inverterpower units.IGBT chopper H-bridgeinverter modules.IGBT full 3-phaseinverters for motorcontrol.Frequency converters.

Pulsed PowerSingle pulse systems(e.g. 150kA, 20kV, 1pulse per 5 seconds).Multiple pulse systems,(e.g. 15Hz).Waveform shaping.

Stack AssembliesStick stacks for highvoltage, high currentapplications.MV soft starts.Crowbars.Thyristor/GTOassemblies with anti-parallel diodecombinations.

Special SystemSupportOur experienced engineersand assemblers haveworked closely withcustomers throughout theworld to design and/ormanufacture assemblies totheir requirements. Typicallythis work has includedmarine and rail propulsionand power utilityapplications such asSTATCOM link assemblies,SVC and HVDC systems.

Dynex also undertakerefurbishment ofassemblies. This processinvolves the stripping downof an existing assembly intoits component parts andcleaning, replacing,rebuilding and testing theassembly. Thisrefurbishment service hasproved especially beneficialto railway traction operatingcompanies who do not havethe facilities or the skilledengineering staff toundertake this type of work.

Use the online technicalenquiry form or call Dynex todiscuss your powerassembly requirements.

Online technical enquiry form: http://www.dynexsemi.com/products/power_assembly/technical_enquiry/

Pulsed power low inductance co-axialassembly for single shot duty

Water cooled IGBT H bridgeinverter assembly


Power Assemblies

Online technical enquiry form: http://www.dynexsemi.com/products/power_assembly/technical_enquiry/

water cooled base plate.

High voltage A.C. switchesare available up to 15kV forHV soft starts and SVCsystems.

Water cooled A.C. switches(discrete device type): 300Ato 3200A rms welding rating.(Water 40°C, 4.5 ltrs./min.,5% duty cycle, 20 cycles.)Natural air cooled A.C.switches: 400A to 3270Arms. (T

amb. 45°C, 5% duty

cycle, 10 cycles.)Ignitron replacement solidstate assemblies are alsoavailable and can easily befitted as a direct substitutefor a pair of ignitrons.

Device ClampsA line of pre-loaded clampsis offered, from cube clampsfor single side cooling up to30mm discs and bar clampsup to 83kN for our 100mmdisc devices. Bar clampsare suitable for single anddouble side cooling, withhigh insulation versionsavailable for high voltageassemblies.

Clamps can also besupplied separately as a kitof parts.

HeatsinksDynex has its ownproprietary range ofextruded aluminiumheatsinks designed tooptimise the performance ofour semiconductors.Additionally, Dynex hasaccess to a vast range ofaluminium extrusions fromindependent manufacturersgiving our design team thebest options available.Water cooled heatsinks(coolers) are available andare compatible with devicesup to 100mm silicondiameter. These aredesigned for use in highcurrent, high powerassemblies such as single,three or six phase bridges orA.C. controllers. Completebridges of up to six devicesmay be constructed and twocoolers per device may beused for double sidecooling. Power block for 150kW Switched Reluctance (SR) motor

High voltage AC switch for SVC applications

Air cooled and water cooled(cooler) heatsinks

A.C. SwitchesDynex offer acomprehensive range ofstandard water and aircooled A.C. switchassemblies, includingisolated heatsink types andmodules with an integral


Contact UsSales Offices, Distributors and Representatives

Details of power contacts were correct at the time of going to press. For latest up to date address list please refer to the ‘Contact

Us’ section on our website http://www.dynexsemi.com

Key: D = Distributor, R = Representative.

Customer Services

Dynex Semiconductor, Doddington Road, Lincoln, LN6 3LF. United Kingdom.Tel: + 44 (0)1522 502753 / 502901/ 500500, Fax: + 44 (0)1522 500020. E-mail: [email protected]

Sales Offices

France, Spain, Portugal, Benelux, Italy & Switzerland: Tel: +33 3 44 72 84 31. Fax: +33 3 44 72 77 61.E-mail: [email protected]

Rest of the World: Tel: +44 1522 502716 / 502901, Fax: +44 1522 500020. E-mail: [email protected]

Africa & Middle East

IsraelD Elina Electronic Engineering Limited, 25 Ha-Lehi, Bnei-Brak 51200. Tel: 03 6164970/1. Fax: 03 616 4951.

E-mail: [email protected] Richardson Electronics, 4 Hayetzira Street, Ra’Anana 43100. Tel: 09 7483232. Fax: 09 7416510. E-mail: [email protected]

South AfricaD Taltronics Pty. Ltd, PO Box 2578, Edenvale 1610. Tel: +27 11 9746155, Fax: +27 11 97435555. E-mail: [email protected]

Asia / Pacific Region

AustraliaD Richardson Electronics, ABN 19 069 808 108, Unit 3, 42-50 Stud Road, Bayswater. VIC 3153. Tel: (3) 9738 0733,

Fax: (3) 9738 1807. E-mail: [email protected] Richardson Electronics, ABN 19 069 808 108, Unit 23, 10 Gladstone Road, Castle Hill. NSW 2154. Tel: (2) 9894 7288,

Fax: (2) 9894 7481. E-mail: [email protected]

D Beijing Jing Yi Chun Shu Rectifier Co. Ltd, 45 Bei Xinhua Jie, Beijing 100031. Tel: 010-660 36136 / 660 56946,Fax: 010-660 36095 / 660 56926. E-mail: [email protected]

D Richardson Electronics, Room 1009, Union Plaza, 20 Chaoyangmenwai Dajie, Chaoyang District, Beijing 100020.Tel: 010-6588-5548, Fax: 010-6588-5541. E-mail: [email protected]

D Richardson Electronics, Room 602, Flat B., Far East International Plaza, No. 317 Xianxia Road, Shanghai 200051.Tel: 021- 6235-1788, Fax: 021-6440-1293. E-mail: [email protected]

D Sunny Electric Trading Co. Ltd, F Flat, 16th Floor West AIDI Building, Binhe Road, Futian Area, Shenzhen, 518045.Tel: 0755-835 51085 / 83551293 / 83551030, Fax: 0755-835 51052. E-mail: [email protected]

IndiaR BSM Technologies, H532, AWHO, Senavihar, Kammanahalli, Bangalore 560084. Tel: 98 450 23390. Fax: 80 545 0003.

E-mail: [email protected].

JapanD Fuji Electronics Co Ltd, Ochanomizu-Center Building, 2-12 Hongo 3 Chome Bunkyo-Ku, Tokyo 113. Tel: (03) 3814 2200,

Fax: (03) 3814 1771, E-mail: [email protected] Richardson Electronics, Q-Dan 1991, Building 1-12-1, Fujimi, Chiyoda-Ku, Tokyo 102-0071. Tel: (03) 5215 1577,

Fax: (03) 5215 1588. E-mail: [email protected] Richardson Electronics, Umeshin-Park Building, 4-3-11 Nishi-Tenma, Kita-Ku, Osaka 530-0047. Tel: (06) 6314 5557,


D RNB Korea Ltd, Room 202 Hyundai I-Valley, 223-12 Sangdaewon-dong, Jungwon-gu, Seongnam-si, Kyunggi-do 461-10.Tel: (031) 737 9580/1, Fax: (031) 737 9582. E-mail: [email protected]

D Richardson Electronics, 7F, Yesung B/D, 150-30 Samsung-dong, Kangnam-Ku, Seoul 135-090.Tel: (02) 539-4731, Fax: (02) 539 4730. E-mail: [email protected]

MalaysiaD Richardson Electronics, No. 5B Worldwide Business Park, Block 1, Jalan Tinju 13/50, Seksyen 13, 40675 Shah Alam, Selangor.

Tel: 603-5511-5421, Fax: 603-5511-5423. E-mail: [email protected]



PhilippinesD Richardson Electronics, Unit 2805 Jollibee Plaza B/D, Emerald Av., Ortigas Center, Pasig City. Tel: 632-636-8891,

Fax: 632-633-9471. E-mail: [email protected]

D Richardson Electronics, 76 Playfair Road, #03-01 LHK2 Building, 367996. Tel: +65-487-5995, Fax: +65-487-5665.E -mail: [email protected]

TaiwanD Richardson Electronics, FL17-1, No.-77 Hsin-Tai 5 Rd. Sec. 1, Hsihjr City, Taipei Hsien 221. Tel: (2) 8691-5238 / 2698-3288,

Fax: (2) 8691-5235. E-mail: [email protected] Taiwan Thyristor Industries Co. Ltd, 10F-5, No. 12, Lane 609, Chung-Hsin Road, Sec 5, San-Chung, Taipei.

Tel: (02) 2999 2101, Fax: (02) 2999 2169. E-mail: [email protected]

ThailandR Choakchai Electronic Supplies Ltd, Part. 128/22 Thanon, Corp. Atsadang, Bangkok 10200. Tel: 2 223921, Fax: 2 2247639.D Richardson Electronics, 555/13-14 Unity Tower 1st Floor, Sukhumvit 103 Rd Bangchak, Phrakhanong, Bangkok 10260

Tel: (2) 749-4402 / 749-4419, Fax: (2) 749-4403. E-mail: [email protected]

VietnamD Richardson Electronics, Suite #206-207, Tecasin Business Center, 243-243B Hoang Van Thu St, Dist. Tan Binh, Ho Chi Minh City.

Tel: +84 89974245/84 89974246. Fax: +84 89974071. E-mail: [email protected]

Europe

AustriaR P.E.P., Raustrasse 17-1, 88400 Biberach. Tel: 07351 31956. Fax: 07351 827723. E-mail: [email protected]

BelgiumD ACAL SA, Lozenberg 4, 1932 Zaventum. Tel : 02 720 5983. Fax: 02 725 1014.D Richardson Electronics Benelux B.V., Holland Office Centre, Kruisweg 789-799, Bldg. 5, 2132 NG Hoofdorp, The Netherlands.

Tel: +31 23 55 60 490. Fax: 31 23 55 60 491. E-mail: [email protected]

CroatiaR P.E.P., Raustrasse 17-1, 88400 Biberach. Tel: 07351 31956. Fax: 07351 827723. E-mail: [email protected]

Czech RepublicD Semic Trade s.r.o., Volutova 2521 / 18, Praha 5, 158-00. Tel: 02 5162 5331. Fax: 02 5162 6252. E-mail: [email protected].

DenmarkD Richardson Electronics, Baldersbuen 15H, DK-2640 Hedenhusene. Tel: 46 55 56 30. Fax: 46 55 56 31. E-mail: [email protected]

FinlandD Richardson Electronics, Lunkintie 21, FI-90460 Oulunsalo. Tel: 08 825 1126 / 08 825 1100. Fax: 08 825 1110.

E-mail: [email protected]

D Richardson Electronics, 46 Avenue Kleber, Colombes Cedex 92706. Tel: (01) 55 66 00 30. Fax: (01) 55 66 00 31.E-mail: [email protected]

GermanyD Hy-Line Power Components Vertriebs GmbH, Inselkammerstrasse 10, 82008 Unterhaching. Tel: 089-614 503 10.

Fax: 089-614 503 20. E-mail: [email protected] P.E.P., Raustrasse 17-1, 88400 Biberach. Tel: 07351 31956. Fax: 07351 827723. E-mail: [email protected] Richardson Electronics, Zeppelinstrasse 2, 82178 Puchheim. Tel: 089-890 214-0. Fax: 089-890-214-90. E-mail: [email protected]

HungaryR P.E.P., Raustrasse 17-1, 88400 Biberach. Tel: 07351 31956. Fax: 07351 827723. E-mail: [email protected]

ItalyD Richardson Electronics srl, Via Colleoni, 5, Pallazo Taurus 3, 20041 Agrate Brianza, Milano. Tel: (039) 653 145.

Fax: (039) 653 835 E-mail: [email protected],DSisram SPA, Casella Postale 1168, 10100 Torino. Tel: 011 440 44 44. Fax: 011 440 44 00. E-mail: [email protected]

NetherlandsD ACAL Nederland BV, Beatrix de Rijkweg 8, 5657 EG, Eindhoven. Tel: 040 250 26 02. Fax: 040 251 02 55. E-mail: [email protected] Richardson Electronics Benelux B.V., Holland Office Centre, Kruisweg 789-799, Bldg. 5, 2132 NG Hoofdorp, The Netherlands.

Tel: +31 23 55 60 490. Fax: 31 23 55 60 491. E-mail: [email protected]

D Richardson Electronics, Vestre Oterbekkvei 4, 3135 Torod. Tel: 333 86271. Fax: 333 83106. E-mail: [email protected]

PolandR P.E.P., Raustrasse 17-1, 88400 Biberach. Tel: 07351 31956. Fax: 07351 827723. E-mail: [email protected]

RomaniaD Sytron Technologies Overseas srl, Calea Rahovei 266-268, Corp 63, Etas 7, Sector 5, 0501912 Bucharesti. Tel: (21) 423 2971.




RussiaD RTD-Universal, 8-AYA UI. Tekstilchikov, dom 11, 109129 Moscow. Tel: + 7 (0)95 919-87-40. Fax: + 7 (0)95 919-87-44.

E-mail: info@rtd- universal.ruSpain & Portugal

D Lintronic S. L., Severo Ochoa, 9, Las Rozas, 28230 Madrid. Tel: (91) 640 1300. Fax:(91) 640 0422. E-mail: [email protected] Richardson Electronics, Calle Hierro 9, 1 a Planta Nave 10 Edificio Legazpi, 28045 Madrid. Tel: (91) 528 3700,


D Sangus-Richardson, Girovagen 13, 1tr, Jarfalla 175-62. Tel: (08) 564 705 90. Fax: (08) 760 4663. E-mail: [email protected]

SwitzerlandD Hy-Line AG, Gründenstrasse 82, CH-8247 Flurlingen. Tel: 0 52 647 42 00. Fax: 0 52 647 42 01. E-mail: [email protected] Richardson Electronics, Zeppelinstrasse 2, 82178 Puchheim, Germany. Tel: + 49 89-890 214-0. Fax: +49 89-890-214-90.

E-mail: [email protected] Turkey

D Elektro Elektronik Sanayi Ticaret A.S., Alemdag Cad No. 169, 81257 Unraniye, Istanbul. Tel: 216 461 07 00, Fax: 261 461 07 96.E-mail: [email protected]

UkraineR VD Mais, PO Box 942, Zhilyanska St 29, 01033 Kyiv, Ukraine. Tel: (380 44) 287 1356,. Fax: (380 44) 287 3668.

E-mail: [email protected] Kingdom

D Europower Components Ltd, Gibson House, Caenby Corner Trading Estate, Hemswell Cliff, Gainsborough DN21 5TL.Tel: 01427 668888. Fax: 01427 668866. E-mail: [email protected]

D Richardson Electronics, 226 Berwick Avenue, Slough SL1 4QT. Tel: 01753 733010, Fax: 01753 733012. E-mail: [email protected]

North America

Canada

D Richardson Electronics, Brampton, ON. Toll Free: 800-348-5580, Tel: (905) 789-3000, Fax: (905) 789-3050.E-mail: [email protected]

D VR Electronics, 101 Bentley St, Markham, ON. Tel: (905) 475 1401, Fax (905) 475 1402. E-mail: [email protected] Votron Electronics Ltd, 250 Rayette Rd, Unit 25, Concord, Ontario L4K 3G6, Tel: (905) 669 9870, Fax, (905) 669 4617.


United States of America

All States, DistributionD Darrah Electric Company, 5914 Merrill Ave, Cleveland, OH 44102-5699. Tel: (216) 631-0912, Fax: (216) 631-0440.

E-mail: [email protected] Richardson Electronics, La Fox, IL. Toll Free: 888-735-7358, Tel: (630) 208-2290, Fax: (630) 208-2550. E-mail: [email protected]

AlabamaR All South Technical Sales, Tel: (256) 971 0422, Fax: (631) 468 3950. E-mail: [email protected]

ArkansasR O & M Sales Inc, 8340 Meadow Road, Suite 224, Dallas, TX 75231. Tel: (214) 361-8876, Fax: (214) 692-0235.

E-mail:[email protected]

R KSA Electronics, 1081 Camino Del Rio South, Suite 205,San Diego,CA 92108. Tel: (619) 858 0770, Fax (619) 858 0773.E-mail: [email protected]

D Richardson Electronics, Woodland Hills, CA. Toll Free: 800-348-5580, Tel: (818) 594-5600, Fax: (818) 594-5650.E-mail: [email protected]

Carolina, NorthR All South Technical Sales, Tel: (919) 460 8660, Fax: (919) 460 1129. E-mail: [email protected] All South Technical Sales, Tel: (919) 386 1106, Fax: (919) 460 1129. E-mail: [email protected]

Carolina, SouthR All South Technical Sales, Tel: (336) 282 7855, Fax: (336) 282 7853. E-mail: [email protected]

DelawareR Metz Jade Associates, 290 King of Prussia, Suite A 100, Radnor, PA 19087-5110. Tel: (610) 293-0200, Fax: (610) 293-6441.


R All South Technical Sales, Tel: (770) 447 6478, Fax: (919) 460 1129. E-mail: [email protected]

GeorgiaR All South Technical Sales, Tel: (770) 447 6478, Fax: (770) 447 6478. E-mail: [email protected]



IllinoisD Richardson Electronics, La Fox, IL. Toll Free: 888-735-7358, Tel: (630) 208-2290, Fax: (630) 208-2550. E-mail: [email protected]

R Select Technology Group, 125 East Lake St, Bloomingdale, Illinois 60108. Tel: (630) 539 1980, Fax: (630) 530 1983.E-mail: [email protected]

LouisianaR O & M Sales Inc, 8340 Meadow Road, Suite 224, Dallas, TX 75231. Tel: (214) 361-8876, Fax: (214) 692-0235.


R Metz Jade Associates, 290 King of Prussia, Suite A 100, Radnor, PA 19087-5110. Tel: (610) 293-0200, Fax: (610) 293-6441.E-mail: [email protected]

MississippiR All South Technical Sales, Tel: (256) 971 0422, Fax: (256) 971 0201. E-mail: [email protected]

New JerseyR Metz Jade Associates, 290 King of Prussia, Suite A 100, Radnor, PA 19087-5110, Tel: (610) 293-0200, Fax: (610) 293-6441.

E-mail: [email protected] York

D Richardson Electronics, Ronkonkoma, NY. Toll Free: 800-737-6937, Tel: (631) 468-3900, Fax: (631) 468-3950.E-mail: [email protected]

OhioD Darrah Electric Company, 5914 Merrill Ave, Cleveland, OH44102-5699. Tel: (216) 631-0912, Fax: (216) 631-0440.


R O & M Sales Inc, 8340 Meadow Road, Suite 224, Dallas, TX 75231. Tel: (214) 361-8876, Fax: (214) 692-0235.E-mail: [email protected]

Pennsylvania, EasternR Metz Jade Associates, 290 King of Prussia, Suite A 100, Radnor, PA 19087-5110. (168xx to 196xx only). Tel: (610) 293-0200,

Fax: (610) 293-6441. E-mail: [email protected]

R All South Technical Sales, Tel: (256) 971-0422, Fax: (256) 971-0201. E-mail: [email protected]

R O & M Sales Inc, 8340 Meadow Road, Suite 224, Dallas, TX 75231. Tel: (214) 361-8876, Fax: (214) 692-0235.E-mail: [email protected]

VirginiaR Metz Jade Associates, 290 King of Prussia, Suite A 100, Radnor, PA 19087-5110, Tel: (610) 293-0200, Fax: (610) 293-6441.


R Select Technology Group, 125 East Lake St, Bloomingdale, Illinois 60108. Tel: (630) 539 1980, Fax: (630) 530 1983.E-mail: [email protected]

Central America

MexicoD Richardson Electronics, La Quemada 439, Col. Narvarte, Mexico City, DF 03020.

Tel: +52 555-532-2522, Fax: +52 555-609-0006. E-mail: [email protected], [email protected] Richardson Electronics, Av. Mariano Otero Nol. 1901 Int. 103-104, Res Victoria, Guadalajara Jalisco 44550.

Tel: +52 33 31230041/+52 33 31230042, Fax: +52 33 31210969. E-mail: [email protected]

South America

BrazilD Richardson Electronics, R Nascimento e Silva, 291, Ipanema Block, Rio De Janeiro 22421020 RJ

Tel: (21) 2521 9000, Fax: (21) 2521-9900. E-mail: [email protected]

D Richardson Electronics, Rua Antonio das Chagas, 1426 Sao Paulo-SP 04714-002 Tel: (11) 5186-9655, Fax: (11) 5186-9678.E-mail: [email protected]

ColombiaD Richardson Electronics, Calle 96 No. 22-64, Oficina 210, Bogota DC. Tel: (57-1) 636-1028, Fax: (57-1) 636-1005.



This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of anyorder or contract nor be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capabilityperformance or suitability of any product or service. The Company reserves the right to alter without prior knowledge the specification, design or price of any product or service.Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece ofequipment. It is the user’s responsibility to determine fully the performance and suitability of any equipment using such information and to ensure that any publication or data usedhas not been superseded. These products are not suitable for use in any medical product whose failure to perform may result in death to the user.

All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request.

All trademarks and registered trademarks are property of their respective owners.

Supersedes issue March 2006, version DS5766-2.© Dynex Semiconductor 2007.

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50 Years of Power Semiconductor Production in · PDF fileDatasheets available on 1 50 Years of Power Semiconductor Production in Lincoln Welcome to this the latest edition of the Dynex