2sk1056

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2SK1056, 2SK1057, 2SK1058

Silicon N-Channel MOS FET

Application

Low frequency power amplifier

Complementary pair with 2SJ160, 2SJ161 and 2SJ162

Features

Good frequency characteristic

High speed switching

Wide area of safe operation

Enhancement-mode

Good complementary characteristics

Equipped with gate protection diodes Suitable for audio power amplifier

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2SK1056, 2SK1057, 2SK1058

Outline

12

3

TO-3P

1. Gate

2. Source(Flange)

3. Drain

D

G

S

Absolute Maximum Ratings (Ta = 25C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1056 VDSX 120 V

2SK1057 140

2SK1058 160

Gate to source voltage VGSS 15 V

Drain current ID 7 A

Body to drain diode reverse drain current IDR 7 A

Channel dissipation Pch*1 100 W

Channel temperature Tch 150 C

Storage temperature Tstg 55 to +150 C

Note: 1. Value at TC = 25C

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2SK1056, 2SK1057, 2SK1058

Electrical Characteristics (Ta = 25C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1056 V(BR)DSX 120 V ID = 10 mA, VGS = 10 V

breakdown voltage 2SK1057 140

2SK1058 160

Gate to source breakdown

voltage

V(BR)GSS 15 V IG = 100 A, VDS = 0

Gate to source cutoff voltage VGS(off) 0.15 1.45 V ID = 100 mA, VDS = 10 V

Drain to source saturation

voltage

VDS(sat) 12 V ID = 7 A, VGD = 0 *1

Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A, VDS = 10 V *1

Input capacitance Ciss 600 pF VGS = 5 V, VDS = 10 V,

Output capacitance Coss 350 pF f = 1 MHzReverse transfer capacitance Crss 10 pF

Turn-on time ton 180 ns VDD = 20 V, ID = 4 A,

Turn-off time toff 60 ns

Note: 1. Pulse test

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2SK1056, 2SK1057, 2SK1058

50 1000

Case Temperature TC (C)

150

50

ChannelDissipationPch(

W)

Power vs. Temperature Derating

100

150

Maximum Safe Operation Area

DrainCurrentID(A)

10 20 50

1.0

2

5

100

10

20

Drain to Source Voltage VDS (V)

5 500

0.5

2000.2

IDmax (Continuous)

Ta = 25C

PW=10

ms 1shot

PW=1

00ms 1shot

PW

=1s 1shot

DCOperation(T

C=25C)

2SK1056 2SK10572SK1058

Typical Output Characteristics

30

Drain to Source Voltage VDS (V)

402010 50

Dra

inCurrentID(A)

0

2

4

6

8

0

10

VGS = 10 V TC = 25C

12

0

5

6

7

8

9

Pch=100W3

4

Typical Transfer Characteristics

1.2

Gate to Source Voltage VGS (V)

1.60.80.40 2.0

0.2

0.4

0.6

0.8

1.0

0

Dra

inCurrentID(A)

TC=

25C

75

VDS = 10 V

25

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2SK1056, 2SK1057, 2SK1058

Drain to Source SaturationVoltage vs. Drain Current

1.0

Drain Current ID (A)

20.50.2 5

1.0

2

5

10

0.1

0.5

DraintoSourceSaturationVoltage

VDS(on)(V)

0.2

0.1

10

TC=25C

25C

75

CVGD = 0

Drain to Source Voltage vs.Gate to Source Voltage

6


8420 10

4

6

8

10

0

2

DraintoSourceVoltage

VDS

(V)

ID=1A

5A

TC = 25C

2A

Input Capacitance vs. GateSource Voltage

1000

500

200

100

InputCapacitanceCiss(pF)

0 2 4 10


6 8

VDS = 10 Vf = 1 MHz

Forward Transfer Admittancevs. Frequency

3.0

1.0

0.3

0.1

0.03

0.01

0.00310 k 30 k 100 k 300 k 1 M 10 M

Frequency f (Hz)

3 MForwardTransferAd

mittance

yfs

(S)

TC = 25C

VDS = 10 V

ID = 2 A

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2SK1056, 2SK1057, 2SK1058

Switching Time vs. Drain Current

500

200

100

50

20

10

50.1 0.2 0.5 1.0 2 10

Drain Current ID (A)

5

SwitchingTimeton,toff(ns)

t on

t off

Output

RL= 2

20 V

50

Input

PW = 50s

duty ratio= 1 %

Switching Time Test Circuit

90 %

10 %

90 %

10 %

Output

Input

t on t off

Waveforms

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3.2 0.2

4.8 0.2

1.5

0.

3

2.8

0.6 0.21.0 0.2

18.

0

0.

5

19.

9

0.

2

15.6 0.3

0.

5

1.

0

5.

0

0.

3

1.6

1.4 Max 2.0

2.

014.

9

0.2

3.6 0.9

1.0

5.45 0.55.45 0.5

Hitachi CodeJEDECEIAJWeight (reference value)

TO-3PConforms5.0 g

Un

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Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,

copyright, trademark, or other intellectual property rights for information contained in this document.

Hitachi bears no responsibility for problems that may arise with third partys rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachis sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause ris

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlfor maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document withou

written approval from Hitachi.

7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533

URL NorthAmerica : http:semiconductor.hitachi.com/Europe : http://www.hitachi-eu.com/hel/ecgAsia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htmAsia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htmAsia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htmJapan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167,Tun-Hwa North Road, Taipei (105)Tel: (2) 2718-3666F 886 (2) 2718 8180

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Electronic Components Group.Whitebrook ParkLower Cookham RoadMaidenhead

Hitachi Europe GmbHElectronic components GroupDornacher Strae 3D-85622 Feldkirchen, MunichGermanyTel: (89) 9 9180-0Fax: (89) 9 29 30 00

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For further information write to:

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