8/3/2019 2SD2645
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2SD2645
No.6897-1/4
Features High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 1500 V
Collector-to-Emitter Voltage VCEO 800 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 10 A
Collector Current (Pulse) ICP 25 A
Collector Dissipation PC3.0 W
Tc=25C 80 W
Junction Temperature Tj 150 C
Storage Temperature Tstg --55 to +150 C
Electrical Characteristicsat Ta=25CRatings
Parameter Symbol Conditionsmin typ max
Unit
Collector Cutoff CurrentICBO VCB=800V, IE=0 10 A
ICES VCE=1500V, RBE=0 1.0 mA
Collector Sustain Voltage VCEO(sus) IC=100mA, IB=0 800 V
Emitter Cutoff Current IEBO VEB=4V, IC=0 40 130 mA
Collector-to-Emitter Saturat ion Voltage VCE(sat) IC=7.2A,
IB=1.44A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=7.2A, IB=1.44A
1.5 V
DC Current GainhFE1 VCE=5V, IC=1A 15
hFE2 VCE=5V, IC=8A 5 8
Diode Forward Voltage VF IEC =8A 2 V
Fall Time tf IC=5A, IB1=1A, IB2=--2A 0.3 s
SANYO Electric Co.,Ltd. Semiconductor CompanyTOKYO OFFICE Tokyo
Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6897B
D1503 TS IM TA-100990 / 52101 TS IM TA-3147 / 13001 TS IM
TA-3088
Any and all SANYO products described or contained herein do not
have specifications that can handleapplications that require
extremely high levels of reliability, such as life-support systems,
aircraft'scontrol systems, or other applications whose failure can
be reasonably expected to result in seriousphysical and/or material
damage. Consult with your SANYO representative nearest you before
usingany SANYO products described or contained herein in such
applications.
SANYO assumes no responsibility for equipment failures that
result from using products at values thatexceed, even momentarily,
rated values (such as maximum ratings, operating condition ranges,
or other
parameters) listed in products specifications of any and all
SANYO products described or containedherein.
2SD2645NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal DeflectionOutput Applications
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2SD2645
No.6897-3/4
0
0
20 40 60 80 100 120 140 160
3.0
3.5
0.5
1.0
1.5
2.0
2.5
Noheatsink
0
0
20 40 60 80 100 120 140 160
10
20
30
40
50
60
90
70
80
IT02884
IT02886
IT02888
IT02887
IT02889
Collector-to-Emitter Voltage, VCE -- V
CollectorCurrent,IC--
A
Collector-to-Emitter Voltage, VCE -- V
Reverse Bias A S O
CollectorCurrent,IC--
A
Forward Bias A S O
Collector Current, IC -- A
SwitchingTime
,SWT
ime--s
SW Time -- IC SW Time -- IB2
Base Current, IB2 -- A
SwitchingTime
,SWT
ime--s
0.1
1.0
10
0.1
7
5
3
2
7
5
3
2
5 1.0 102 3 7 52 3 7
0.01
0.1
1.0
10
100
2
3
57
2
3
57
2
3
57
2
3
57
1.0
2
3
5
7
1.0
2
3
5
2
3
5
7
10
0.1
100 2 3 2 35 7 100010 100 10003 5 72 3 5 72 3 5 72
L=500H
IB2= --2A
Tc=25C
Single pulse
VCC=200V
IC/IB1=5
IB2/IB1=2
R load
Ambient Temperature, Ta -- C
CollectorDissipation,PC--W
PC -- Ta
Case Temperature, Tc -- C
CollectorDissipation,PC--W
PC -- Tc
tstg
tf
IT02885
0.1
1.0
10
0.1
7
5
3
2
7
5
3
2
5 1.0 102 3 7 52 3 7
tstg
tf
VCC=200V
IC=5A
IB1=1A
R load
DCoperation
1ms10m
s
300
s
100
s
ICP=25A
IC=10A P
C=80W
Tc=25C
Single pulse
