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    2SC3513

    Silicon NPN Epitaxial

    Application

    UHF / VHF wide band amplifier

    Outline

    1

    2

    3

    1. Emitter

    2. Base

    3. Collector

    MPAK

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    Absolute Maximum Ratings (Ta = 25C)

    Item Symbol Ratings Unit

    Collector to base voltage VCBO 15 V

    Collector to emitter voltage VCEO 11 V

    Emitter to base voltage VEBO 2 V

    Collector current IC 50 mA

    Collector power dissipation PC 150 mW

    Junction temperature Tj 150 C

    Storage temperature Tstg 55 to +150 C

    Electrical Characteristics (Ta = 25C)

    Item Symbol Min Typ Max Unit Test conditions

    Collector to base breakdown

    voltage

    V(BR)CBO 15 V IC = 10 A, IE = 0

    Collector cutoff current ICEO 1 A VCE = 10 V, RBE =

    Emitter cutoff current IEBO 1 A VEB = 1 V, IC = 0

    Collector cutoff current ICBO 1 A VCB = 12 V, IE = 0

    DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA

    Collector output capacitance Cob 1.0 1.5 pF VCB = 5 V, IE = 0, f = 1 MHzGain bandwidth product fT 6.0 GHz VCE = 5 V, IC = 20 mA

    Power gain PG 10 dB VCE = 5 V, IC = 20 mA,

    f = 900 MHz

    Noise figure NF 1.6 dB VCE = 5 V, IC = 5 mA,

    f = 900 MHz

    Note: Marking is IS.

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    0 50 100 150

    Ambient Temperature Ta (C)

    CollectorPowerDissipationPC

    (mW)

    Maximum Collector Dissipation Curve

    150

    100

    50

    Collector to Emitter Voltage VCE (V)

    0 2 4 6 8 10

    CollectorCurrent

    IC(mA)

    Typical Output Characteristics

    20

    16

    12

    8

    440

    120

    160

    140

    180

    60

    80

    100

    IB= 20A

    DC Current Transfer Ratio vs.Collector Current

    Collector Current IC (mA)

    1 2 505 20100

    80

    40

    120

    200

    160

    DCCurrentT

    ransferRatiohFE

    PulseVCE = 5 V

    Gain Bandwidth Product vs.Collector Current

    Collector Current IC (mA)

    1 2 5 5020100

    4

    2

    6

    10

    8

    GainBandwid

    thProductfT(GHz)

    VCE = 5 V

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    Collector Output Capacitance vs.Collector to Base Voltage

    Collector to Base Voltage VCB (V)

    21 505 20100

    0.4

    0.8

    1.6

    2.0

    1.2

    CollectorOutputCapacitan

    ceCob(pF)

    IE = 0f = 1 MHz

    Power Gain vs. Collector Current

    Collector Current IC (mA)

    1 2 5 5020100

    8

    4

    12

    20

    16

    PowerGainPG(d

    B)

    VCE = 5 Vf = 900 MHz

    Noise Figure vs. Collector Current

    Collector Current IC (mA)

    1 2 5 5020100

    2

    1

    3

    5

    4

    NoiseFigureNF(dB)

    VCE = 5 Vf = 900 MHz

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    0.16

    0 0.1

    + 0.10 0.063 0.4

    + 0.10 0.05

    0.95 0.95

    1.9 0.2

    2.95 0.2

    2.8

    +0.2

    0.6

    0.6

    5

    1.5

    0.1

    5

    0.6

    5

    1.1

    +0.2

    0.1

    0.3

    Hitachi CodeJEDECEIAJWeight (reference value)

    MPAKConforms0.011 g

    Unit: mm

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    Cautions

    1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,

    copyright, trademark, or other intellectual property rights for information contained in this document.

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    intellectual property rights, in connection with use of the information contained in this document.

    2. Products and product specifications may be subject to change without notice. Confirm that you have

    received the latest product standards or specifications before final design, purchase or use.

    3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

    contact Hitachis sales office before using the product in an application that demands especially high

    quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

    of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

    traffic, safety equipment or medical equipment for life support.

    4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installation

    conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

    beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

    failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

    safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

    consequential damage due to operation of the Hitachi product.

    5. This product is not designed to be radiation resistant.

    6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

    written approval from Hitachi.

    7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor

    products.

    Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

    Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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