Upload
felix-takey-kobata
View
218
Download
0
Embed Size (px)
Citation preview
7/29/2019 2sc3513
1/6
2SC3513
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
7/29/2019 2sc3513
2/6
2SC3513
2
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collector to emitter voltage VCEO 11 V
Emitter to base voltage VEBO 2 V
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V(BR)CBO 15 V IC = 10 A, IE = 0
Collector cutoff current ICEO 1 A VCE = 10 V, RBE =
Emitter cutoff current IEBO 1 A VEB = 1 V, IC = 0
Collector cutoff current ICBO 1 A VCB = 12 V, IE = 0
DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA
Collector output capacitance Cob 1.0 1.5 pF VCB = 5 V, IE = 0, f = 1 MHzGain bandwidth product fT 6.0 GHz VCE = 5 V, IC = 20 mA
Power gain PG 10 dB VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure NF 1.6 dB VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is IS.
7/29/2019 2sc3513
3/6
2SC3513
3
0 50 100 150
Ambient Temperature Ta (C)
CollectorPowerDissipationPC
(mW)
Maximum Collector Dissipation Curve
150
100
50
Collector to Emitter Voltage VCE (V)
0 2 4 6 8 10
CollectorCurrent
IC(mA)
Typical Output Characteristics
20
16
12
8
440
120
160
140
180
60
80
100
IB= 20A
DC Current Transfer Ratio vs.Collector Current
Collector Current IC (mA)
1 2 505 20100
80
40
120
200
160
DCCurrentT
ransferRatiohFE
PulseVCE = 5 V
Gain Bandwidth Product vs.Collector Current
Collector Current IC (mA)
1 2 5 5020100
4
2
6
10
8
GainBandwid
thProductfT(GHz)
VCE = 5 V
7/29/2019 2sc3513
4/6
2SC3513
4
Collector Output Capacitance vs.Collector to Base Voltage
Collector to Base Voltage VCB (V)
21 505 20100
0.4
0.8
1.6
2.0
1.2
CollectorOutputCapacitan
ceCob(pF)
IE = 0f = 1 MHz
Power Gain vs. Collector Current
Collector Current IC (mA)
1 2 5 5020100
8
4
12
20
16
PowerGainPG(d
B)
VCE = 5 Vf = 900 MHz
Noise Figure vs. Collector Current
Collector Current IC (mA)
1 2 5 5020100
2
1
3
5
4
NoiseFigureNF(dB)
VCE = 5 Vf = 900 MHz
7/29/2019 2sc3513
5/6
0.16
0 0.1
+ 0.10 0.063 0.4
+ 0.10 0.05
0.95 0.95
1.9 0.2
2.95 0.2
2.8
+0.2
0.6
0.6
5
1.5
0.1
5
0.6
5
1.1
+0.2
0.1
0.3
Hitachi CodeJEDECEIAJWeight (reference value)
MPAKConforms0.011 g
Unit: mm
7/29/2019 2sc3513
6/6
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533
URL NorthAmerica : http:semiconductor.hitachi.com/Europe : http://www.hitachi-eu.com/hel/ecgAsia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htmAsia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htmAsia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htmJapan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167,Tun-Hwa North Road, Taipei (105)Tel: (2) 2718-3666Fax: (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong KongTel: (2) 735 9218Fax: (2) 730 0281Telex: 40815 HITEC HXHitachi Europe Ltd.
Electronic Components Group.Whitebrook ParkLower Cookham RoadMaidenheadBerkshire SL6 8YA, United KingdomTel: (1628) 585000Fax: (1628) 778322
Hitachi Europe GmbHElectronic components GroupDornacher Strae 3D-85622 Feldkirchen, MunichGermanyTel: (89) 9 9180-0Fax: (89) 9 29 30 00
Hitachi Semiconductor(America) Inc.179 East Tasman Drive,San Jose,CA 95134Tel: (408) 433-1990Fax: (408) 433-0223
For further information write to: