2SC3356

7/27/2019 2SC3356

1/9

DATA SHEET

SILICON TRANSISTOR

2SC3356

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. P10356EJ5V1DS00 (5th edition)

Date Published March 1997 NPrinted in Japan 19

DESCRIPTION

The 2SC3356 is an NPN silicon epitaxial transistor designed for low

noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

FEATURES

Low Noise and High Gain

NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

High Power Gain

MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

Collector to Base Voltage VCBO 20 V

Collector to Emitter Voltage VCEO 12 V

Emitter to Base Voltage VEBO 3.0 V

Collector Current IC 100 mA

Total Power Dissipation PT 200 mW

Junction Temperature Tj 150 C

Storage Temperature Tstg 65 to +150 C

ELECTRICAL CHARACTERISTICS (TA = 25 C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0

Emitter Cutoff Current IEBO 1.0 A VEB = 1.0 V, IC = 0

DC Current Gain hFE* 50 120 300 VCE = 10 V, IC = 20 mA

Gain Bandwidth Product fT 7 GHz VCE = 10 V, IC = 20 mA

Feed-Back Capacitance Cre** 0.55 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz

Insertion Power Gain

S21e

2

11.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Noise Figure NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz

* Pulse Measurement PW

350

s, Duty Cycle

2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

hFE Classification

Class R23/Q * R24/R * R25/S *

Marking R23 R24 R25

hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification

PACKAGE DIMENSIONS

(Units: mm)

1.5

2

13

Marking

PIN CONNECTIONS

1.2.3.

EmitterBaseCollector

2.80.2

2.9

0

.2

1.1

to1

.4

0

to0

.1

0.9

5

0.3

0.95

0.4

+0.1

0.0

5

0.4

+0.1

0.0

5

0.1

6+0.1

0.0

6

0.65+0.10.15

7/27/2019 2SC3356

2/9

2

2SC3356

TYPICAL CHARACTERISTICS (TA = 25 C)

TOTAL POWER DISSIPATION vs.AMBIENT TEMPERATURE

200

100

0

10

20

50

100

200

50

1 5 10 500.5

100 150

TA-Ambient Temperature-C

IC-Collector Current-mA

DC CURRENT GAIN vs.COLLECTOR CURRENT

PT-To

talPower

Dissipa

tion-m

W

hFE-D

CCurren

tGa

in

VCE = 10 V

0

5

10

15

0.5 1 5 10 50 70


INSERTION GAIN vs.COLLECTOR CURRENT

|S21e

|2-Insert

ion

Ga

in-d

B

VCE = 10 Vf = 1.0 GHz

0.3

0.5

1

2

0 0.5 1 2 5 10 20 30

VCB-Collector to Base Voltage-V

FEED-BACK CAPACITANCE vs.COLLECTOR TO BASE VOLTAGE

Cre-Feed-backCapaci

tance-pF

f = 1.0 MHz

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

0 0.5 1.0 105.0 30


GAIN BANDWIDTH PRODUCT vs.COLLECTOR CURRENT

fT-G

ainBan

dw

idthPro

duc

t-MHz

VCE = 10 V0

10

20

0.1 0.2 0.4 0.6 0.81.0 2

f-Frequency-GHz

INSERTION GAIN, MAXIMUM GAINvs. FREQUENCY

Gmax-Max

imum

Ga

in-d

B

|S21e

|2-Insert

ion

Ga

in-d

B

VCE = 10 VIC = 20 mA

Gmax

|S21e|2

Free Air

7/27/2019 2SC3356

3/9

3

2SC3356

0

2

1

5

4

3

7

6

0.5 1 5 10 50 70


NOISE FIGURE vs.COLLECTOR CURRENT

NF-NoiseFigure-dB

VCE = 10 Vf = 1.0 GHz

5

4

3

2

1

0

18

15

12

6

3

02 4 6 8 10

VCE-Collector to Emitter Voltage-V

NOISE FIGURE, FORWARD INSERTIONGAIN vs. COLLECTOR TO EMITTER VOLTAGE

NF-NoiseFigure-dB

|S21e|2-Inse

rtionGain-dB

f = 1.0 GHzIC = 20 mA

|S21e|2

NF

S-PARAMETER

VCE = 10 V, IC = 5 mA, ZO = 50

f (MHz)

S11

S11

S21

S21

S12

S12

S22

S22

200

400

600

800

1000

1200

1400

1600

1800

2000

0.651

0.467

0.391

0.360

0.360

0.361

0.381

0.398

0.423

0.445

69.3

113.3

139.3

159.2

176.9

172.7

160.3

152.2

143.3

137.6

10.616

6.856

4.852

3.802

3.098

2.646

2.298

2.071

1.836

1.689

129.3

104.4

90.9

81.2

72.9

67.3

59.3

55.2

49.0

46.2

0.051

0.071

0.086

0.101

0.118

0.137

0.157

0.180

0.203

0.220

59.2

54.4

56.0

59.1

61.0

63.5

63.3

64.1

63.7

64.7

0.735

0.550

0.468

0.426

0.397

0.373

0.360

0.337

0.320

0.302

28.1

34.1

33.9

33.6

35.7

38.3

43.0

45.9

52.3

52.2

VCE = 10 V, IC = 5 mA, ZO = 50

f (MHz) S11 S11 S21 S21 S12 S12 S22 S22

200

400

600

800

1000

1200

1400

1600

1800

2000

0.339

0.258

0.243

0.242

0.260

0.269

0.294

0.314

0.343

0.367

107.0

147.3

167.7

177.0

164.5

157.6

148.7

143.1

136.5

131.4

16.516

8.928

6.022

4.633

3.744

3.193

2.750

2.479

2.185

2.016

108.7

92.1

83.0

76.2

69.9

65.7

58.8

55.5

50.1

47.8

0.035

0.060

0.085

0.109

0.136

0.160

0.187

0.212

0.238

0.254

66.1

71.0

71.9

72.2

70.4

69.9

66.7

65.2

62.4

61.6

0.459

0.343

0.305

0.284

0.266

0.246

0.233

0.208

0.190

0.173

36.6

32.9

29.9

29.4

31.7

35.0

40.4

43.6

50.5

48.3

7/27/2019 2SC3356

4/9

4

2SC3356

S-PARAMETER

ANGLEOF

REFLECTI

ON

CO

EFF

CIENT

INDEGREE

S 20

30

40

50

0060

70

8090

100

110

120

130

140

150

160

150

14

0

13

0

12

0

110

10090

80

70

60

50

40

3

0

20

10

0

10

0.28

0.22

0.30

0.20

0.32

0.18

0.34

0.16

0.36

0.140.38

0.12

0.40

0.10

0.42

0.08

0.440

.06

0.46

0.04

0.21

0.19

0.17

0.15

0.130.11

0.09

0.07

0.05

0.03

0.29

0.31

0.33

0.35

0.370.39

0.41

0.43

0.45

0.47

0.0

2

0.4

8

0.0

1

0.4

9

0 0

0.

49

0.

01

0.4

80.0

2

0.4

70.0

3

0.46 0

.04

0.4

5 0.0

5

0.4

4 0.0

6

0.43 0.0

7

0.42

0.08

0.41

0.09

0.40

0.10

0.39

0.11

0.38

0.12

0.37

0.130.36

0.14 0.35

0.150.34

0.16

0.33

0.17

0.32

0.18

0.31

0.19

0.3

0

0.2

0

0.29

0.2

1

0.28

0.22

0.27

0.23

0.26

0.24

0.25

0.25

0.24

0.26

0.23

0.27

WAVELENGTHSTOWARD

LOAD

WAVELENGTH

STOWARDGENERATOR

2.0

50

10

6.0

4.0

3

.0

1.8

1.6

1.4

1.20

.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1.

0

(+JX

ZO

)

0.2

0.4

0.6

0.8

1.0

0.8

0.7

0.6

0.3

0.2

0.1

0.2

1.0

0.8

0.6

0.4

0.2

1.0

0.8

0.6

0.4

0.4

0.5

5.0

10

50

3.0

4.0

1.8

2.0

1.2

1.

00

.91.4

1.6

REACTANCE COMPONENT

( R

ZO)

NEGAT

IVE

REACTA

NCECOMPONENT

POSITIVE

REACTANCE

COMPO

NENT

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0 1

020

0

(JX

ZO)

20

20

0.2

0.4

0.6

0.8

1.0

S11e, S22e-FREQUENCY

S21e-FREQUENCY

90

0

30

30

60

60

180

150

150

120

120

90

5 10 15 20

S21e

0.2 GHz

2.0 GHz

90

0

30

30

60

60

180

150

150

120

120

90

0.05 0.1 0.15 0.2 0.25

S12e

0.2 GHz

2.0 GHz

S12e-FREQUENCY

VCE = 10 V200 MHz Step

CONDITION

VCE = 10 VIC = 20 mA

CONDITION VCE = 10 VIC = 20 mA

CONDITION

0.2 GHz

0.2 GHz

0.2 GHz

2.0 GHz

IC = 20 mA

S22e

S11e

IC = 20 mAIC = 5 mA

IC = 5 mA

7/27/2019 2SC3356

5/9

5

2SC3356

[MEMO]

7/27/2019 2SC3356

6/9

6

2SC3356

[MEMO]

7/27/2019 2SC3356

7/9

7

2SC3356

[MEMO]

7/27/2019 2SC3356

8/9

2SC3356

No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in thisdocument.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from use of a device described herein or any other liability arising

from use of such device. No license, either express, implied or otherwise, is granted under any patents,

copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on

a customer designated "quality assurance program" for a specific application. The recommended applications

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each

device before using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Spec ial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96. 5

7/27/2019 2SC3356

9/9

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.
http://www.datasheetcatalog.com/http://www.datasheetcatalog.com/http://www.datasheetcatalog.com/http://www.datasheetcatalog.com/

Documents

2SC3356