2SC2954

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DATA SHEET

SILICON TRANSISTOR

2SC2954

NPN SILICON EPITAXIAL TRANSISTOR

POWER MINI MOLD

DATA SHEET

Document No. P10405EJ3V0DS00 (3rd edition)

(Previous No. TC-1458A)Date Published March 1997 NPrinted in Japan 19

DESCRIPTION

The 2SC2954 is an NPN epitaxial silicon transistor disigned for

low noise wide band amplifier and buffer amplifier of OSC, for VHF

and CATV bnad.

FEATURES

Low Noise and High Gain.

f = 200 MHz, 500 MHz

NF: 2.3 dB, 2.4 dB

S21e

: 20 dB, 12.5 dB

Large PT in Small Package.

PT: 2 W with 16 cm2

0.7 mm Ceramic Substrate.

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

Collector to Base Voltage VCBO 35 V

Collector to Emitter Voltage VCEO 18 V

Emitter to Base Voltage VEBO 3.0 V

Collector Current IC 150 mA

Total Power Dissipation PT* 2.0 W

Termal Resistance Rth(j-a)* 62.5

C/W

Junction Temperature Tj 150

C

Storage Temperature Tstg

65 to +150

C

* With 16 cm2

0.7 mm

Ceramic Substrate

PACKAGE DIMENSIONS(Unit: mm)

Term, Connection

ECB(SOT-89)

: Emitter: Collector (Fin): Base

0.410.03+0.05

0.470.06

0.420.06

4.50.1

1.60.2

3.0

E BC

1.50.8

MIN.

2.5

0.1

4.0

0.2

5

1.50.1

0.420.06

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ELECTRICAL CHARACTERISTICS (TA = 25 C)

CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Collector Cutoff Current ICBO VCB = 10 V, IE = 0 100 nA

DC Current Gain hFE VCE = 10 V, IC = 50 mA *1 30 100 200

Gain Bandwidth Product fT VCE = 10 V, IC = 50 mA 3.0 4.0 GHz

Feedback Capacitance Cre VCB = 10 V, Emitter Grounded,

f = 1.0 MHz

1.1 1.8 pF

Insertion Power Gain

S21e2

VCE = 10 V, IC = 50 mA, f = 500 MHz

RG = 50

10 12.5 dB

Noise Figure NF VCE = 10 V, IC = 30 mA, f = 500 MHz

RG = 50

2.4 4.0 dB

*1 Pulse Measurement PW 350 s, duty cycle 2 %/Pulsed

TYPICAL CHARACTERISTICS (TA = 25 C)

TOTAL POWER DISSIPATION vs.AMBIENT TEMPERATURE

Ta-Ambient Temperature-C0

1.0

2.0

50 100 150

PT-TotalPowerDissipation-W

COLLECTOR CURRENT vs.BASE TO EMITTER VOLTAGE

VBE-Base to Emitter Voltage-V

0

100

200

0.5 1.0

IC-CollectorCurrent-mA

COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGE

VCE-Collector to Emitter Voltage-V

0

100

200

2 4 6 8 10

IC-CollectorCu

rrent-mA

DC CURRENT GAIN vs.COLLECTOR CURRENT

IC-Collector Current-mA

1

20

30

50

70

100

200

1010 100 200

hFE-DCCurren

tGain

Free Air Rth(j-a) 312.5 C/W

Ceramic Substrate16 cm2 0.7 mm

Rth(j-a) 62.5 C/W

VCE = 10 V

2 mA

1.5 mA

1 mA

IB = 500 A

0

VCE = 10 V

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FEED-BACK AND OUTPUT CAPACITANCEvs. COLLECTOR TO BASE VOLTAGE

VCB-Collector to Base Voltage-V

0

0.2

0.3

0.5

5.0

3.0

2.0

1.0

10

0.11.00.5 105.0 30

Cre-Feed-backCapa

citance-pF

Cob-OutputCapacitance-pF

f = 1.0 MHz

GAIN BANDWIDTH PRODUCT vs.COLLECTOR CURRENT


1.0

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

0.1105.0 50 100

fT-GainBandwidthP

roduct-MHz

VCE = 10 V

INSERTION GAIN vs.COLLECTOR CURRENT


5

5

10

15

30

25

20

010 3020 10050

|S21e

|2-InsertionGain-dB

INSERTION GAIN vs.FREQYENCY

f-Frequency-GHz

0.1

5

10

15

20

25

30

00.2 0.3 0.5 0.7 1.0

|S21e

|2-InsertionGain-dB

VCE = 10 V

f = 100 MHz

f = 200 MHz

f = 500 MHz

f = 1 GHz

VCE = 10 VIC = 50 mA

Cob (Emitter Open)

Cve (Emitter Graund)

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NOISE FIGURE, ASSOCIATED GAIN vs.COLLECTOR CURRENT


1

5

4

3

2

1

0

6

15

12

9

6

3

0

18

2 3 5 7 10 20 30 50 70 100

Ga-Associated

Gain-dB

NF-NoiseFigure-dB

VCE = 10 Vf = 500 MHzRG = 50

NF

Ga

NOISE FIGURE,vs.FREQUENCY

2SC2945 IM2, IM3 vs. IC

VCE = 10 VV0 = 110 dB V/75 Rg = Re = 75

at

IM2IM3

f = 90 + 100 MHzf = 2 200 190 MHz

IM2IM3

IM3

IM2

(dB)

f-Frequency-GHz

0.1

5

4

3

2

1

0

20

30

40

50

60

70

80

20 30

IC (mA)

40 6050 70

6

0.2 0.3 0.5 1.0

NF-NoiseFigure-dB

VCE = 10 VIC = 30 mARG = 50

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ANGLEOF

REFLECTI

ON

COEFFC

IEN

TINDE

GREE

S 20

30

40

50

0060

70

8090100

110

120

130

140

150

160

150

14

0

13

0

12

0

110

10090

80

70

60

50

40

3

0

20

10

0

10

0.28

0.22

0.30

0.20

0.32

0.18

0.34

0.16

0.36

0.140.38

0.12

0.40

0.10

0.42

0.08

0.440

.06

0.46

0.04

0.21

0.19

0.17

0.15

0.130.11

0.09

0.07

0.05

0.03

0.29

0.31

0.33

0.35

0.370.39

0.41

0.43

0.45

0.47

0.0

2

0.4

8

0.0

1

0.4

9

0 0

0.

49

0.

01

0.4

80.0

2

0.4

70.0

3

0.4

60.04

0

.45 0

.05

0.4

4 0.0

6

0.43

0.07

0.42

0.08

0.41

0.09

0.40

0.10

0.39

0.11

0.38

0.12

0.37

0.130.36

0.14 0.35

0.150.34

0.16

0.33

0.17

0.32

0.18

0.31

0.19

0.3

0

0.2

0

0.29

0.2

1

0.28

0.22

0.27

0.23

0.26

0.24

0.25

0.25

0.24

0.26

0.23

0.27

WAVELENGTHSTOWARDLOAD

WA

VEL

EN

GTH

STOW

ARDGENERATOR

2.0

50

10

6.0

4.0

3.0

1.8

1.6

1.4

1.20

.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1.

0

(+JX

ZO

)

0.2

0.4

0.6

0.8

1.0

0.8

0.7

0.6

0.3

0.2

0.1

0.2

1.0

0.8

0.6

0.4

0.2

1.0

0.8

0.6

0.4

0.4

0.5

5.0

10

50

3.0

4.0

1.8

2.0

1.2

1.

00

.91.4

1.6

REACTANCE COMPONENT

( R

ZO )

NEGA

TIVE

REAC

TANCE

COMPONENT

POSITIVE

REACTANCE

COMPONE

NT

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0

10

20

0

(JX

ZO)

20

20

0.2

0.4

0.6

0.8

1.0

S21e-FREQUENCY

S11e, S22e-FREQUENCY

CONDITION VCE = 10 VIC = 50 mAf = 0.1 to 1.0 GHz (STEP. 100 MHz)

CONDITION VCE = 10 VIC = 50 mA

90

0

30

30

60

60

180

150

150

120

120

90

10 15 205.0

1.00.7

0.50.3

0.2

0.1 GHz

S12e-FREQUENCY

CONDITION VCE = 10 VIC = 50 mA

90

0

30

30

60

60

180

150

150

120

120

90

0.1 0.150.200.05

0.1

0.7

0.5

0.30.2

0.1GHz

1 GHz

1.0 GHz

0.1 GHz 0.1 GHz

S11e

S22e

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[MEMO]

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No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in thisdocument.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from use of a device described herein or any other liability arising

from use of such device. No license, either express, implied or otherwise, is granted under any patents,

copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on

a customer designated "quality assurance program" for a specific application. The recommended applications

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each

device before using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Spec ial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96. 5

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