2N5401

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2N5401/MMB

T5401

ND i sc r et e POWER & S i gna l

Techno log ies

PNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages. Sourced from Process 74.

MMBT54012N5401

Absolute Maximum Ratings* TA = 25C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 150 V

VCBO Collector-Base Voltage 160 V

VEBO Emitter-Base Voltage 5.0 V

IC Collector Current - Continuous 200 mA

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C

Thermal Characteristics TA = 25C unless otherwise noted

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Symbol Characteristic Max Units

2N5401 *MMBT5401

PD Total Device DissipationDerate above 25C

6255.0

3502.8

mWmW/C

RJC Thermal Resistance, Junction to Case 83.3 C/W

RJA Thermal Resistance, Junction to Ambient 200 357 C/W

CB

E

TO-92

C

B

E

SOT-23Mark: 2L

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Electrical Characteristics TA = 25C unless otherwise noted

OFF CHARACTERISTICSV(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 150 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 100 A, IE = 0 160 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 V

ICBO Collector Cutoff Current VCB = 120 V, IE = 0

VCB = 120 V, IE = 0, TA = 100C

5050

nA

A

IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA

ON CHARACTERISTICS*

hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 VIC = 10 mA, VCE = 5.0 VIC = 50 mA, VCE = 5.0 V

506050

240

VCE(sat)Collector-Emitter Saturation Voltage I

C= 10 mA, I

B= 1.0 mA

IC = 50 mA, IB = 5.0 mA0.20.5

VV

VBE(sat) Base-Emitter Saturation Vol tage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA

1.01.0

VV

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 10 V,f = 100 MHz

100 300 MHz

Cobo Output Capacitance VCB = 10 V, IE = 0,f = 1.0 MHz

6.0 pF

NF Noise Figure IC = 250 A, VCE = 5.0 V,RS = 1.0 k,f = 10 Hz to 15.7 kHz

8.0 dB

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Spice Model

PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9pItf=0 Vtf=0 Xtf=0 Rb=10)

Symbol Parameter Test Conditions Min Max Units

PNP General Purpose Amplifier(continued)

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Typical Characteristics


Collector-Emitter Saturation

Voltage vs Collector Current

0.1 1 10 1000

0.1

0.2

0.3

0.4

I - COLLECTOR CURRENT (mA)V

-COLLECTOR-EMITTERVOLTAGE(V)

CE

SAT

C

= 10

125 C

- 40 C

25 C

Base-Emitter Saturation

Voltage vs Collector Current

0.1 1 10 1000.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V

-BASE-EMITTERVOLTAGE(V)

BE

SAT

C

= 10

125 C

- 40 C

25 C

Base-Emitter ON Voltage vs

Collector Current

0.1 1 10 1000.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)V

-BASE-EMITTERONVOLTAGE(V)

BE(ON

)

125 C

- 40 C

25 C

C

V = 5VCE

Typical Pulsed Current Gain

vs Collector Current

0.0001 0.001 0.01 0.1 10

50

100

150

200

I - COLLECTOR CURRENT (A)h

-TYPICALPULSEDCURRENTGAIN

FE

- 40 C

25 C

C

V = 5VCE

125 C

Collector-Cutoff Current

vs Ambient Temperature

25 50 75 100 125 150

0.1

1

10

100

T - AMBIENT TEMPERATURE ( C)

I

-COLLECTORCURRENT(nA)

A

V = 100VCB

CBO

Collector-Emitter Breakdown

Voltage with Resistance

Between Emitter-Base

0.1 1 10 100 1000170

180

190

200

210

220

RESISTANCE (k )BV

-BREAKDOWNVOLTAGE(V)

CER

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Typical Characteristics (continued)


Input and Output Capacitance

vs Reverse Voltage

0.1 1 10 1000

20

40

60

80

V - REVERSE BIAS VOLTAGE(V)

CAPACITANCE(pF)

C

f = 1.0 MHz

R

C

cb

eb

Power Dissipation vs

Ambient Temperature

0 25 50 75 100 125 1500

100

200

300

400

500

600

700

TEMPERATURE ( C)

P

-POWERDISSIPATION(mW)

D

o

TO-92

SOT-23

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This datasheet has been download from:

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Documents

2N5401