2.4GHz EMP Protection Circuit with Micro Strip Filter ...research.cgu.edu.tw/ezfiles/14/1014/img/651/99069P.pdf · Chang Gung University 2.4GHz EMP Protection Circuit with Micro Strip

Chang Gung UniversityChang Gung University

2.4GHz EMP Protection Circuit with Micro Strip Filter Configuration

Liann-Be Chang1, Atanu Das1, Ching-Chi Lin1, J. C. Liu2,Yi-Cherng Ferng1, Chien-Fu Shih1 and Sheng-You Liao1

Liann-Be Chang1, Atanu Das1, Ching-Chi Lin1, J. C. Liu2,Yi-Cherng Ferng1, Chien-Fu Shih1, Sheng-You Liao1

1Department of Electronic Engineering & Green Technology Research Center, Chang Gung University, Taiwan, R.O.C.

2Department of Electrical Engineering, Ching Yun University, Taiwan, R.O.C.

1Department of Electronic Engineering &

Green Technology Research Center, Ch G U i it T iChang Gung University, Taiwan

2Department of Electrical Engineering, Ching Yun University, Taiwan

GGreen reen TTechnology echnology RResearch esearch CCenterenter

Chang Gung UniversityChang Gung University About Taiwan

Taiwan

GGreen reen TTechnology echnology RResearch esearch CCenterenter1

Chang Gung UniversityChang Gung University Chang Gung University

Funded by Formosa Plastics Group (FPG) in 1987

FPG：Refinery, plastics, semiconductor, machinery, power plant, transportation, biotechnology, hospital, education, etc.


,

2

Chang Gung UniversityChang Gung University Outline

IntroductionIntroductionMotivationD i d F b i tiDesign and FabricationMeasurement setupResults and DiscussionConclusionConclusion


Chang Gung UniversityChang Gung University What is EMP?

• Electro Magnetic Pulse is a burst of electromagnetic radiation from an explosion or a suddenly fl t ti ti fi ldfluctuating magnetic field.

• EMP from a solar storm.o a so a sto

• EMP from a nuclear explosion high above the t h


atmosphere.

4

Chang Gung UniversityChang Gung University Types of EMP

• E1 Pulse – very fast t f l EMP Itcomponent of nuclear EMP. It

is too fast for ordinary lightning protectors.

• E2 Pulse – many similarities to pulses produced by lightning.

• E3 Pulse – much slower pulse

Source: EMP Environment (MIL-STD-464, "Electromagnet Environmental Effects Requirements For Systems", http://www.tscm.com/MIL-STD-464.pdf ).


Requirements For Systems , http://www.tscm.com/MIL STD 464.pdf ). Note log-log axes used on this graph.

5

Chang Gung UniversityChang Gung University Effects of E1 Pulse

• E1 Pulse travels at 90% of the speed of light

• Peaks after 5 - 10 nanoseconds, over in 1 microsecond

• Normal circuit breakers do not work this fast.

Amplitude up to 50 000 volts/meter• Amplitude up to 50,000 volts/meter

• Will cause integrated circuits connected to cables to overheat and give false readings, be damaged or destroyed.


y

6

Chang Gung UniversityChang Gung University Purpose of EMP Protection

• The purpose of the electromagnetic pulse (EMP) p p g p ( )protection system is to protect critical electrical systems from the effect of intense electromagnetic (EM) pulseelectromagnetic (EM) pulse.

• Medical instruments are very critical.• Can not be affected by any kinds of EMP.Can not be affected by any kinds of EMP.• Therefore, We have some study on this area.


Chang Gung UniversityChang Gung University MotivationEMP Wave front

The frequency spectrum may extend from below 1 Hz to


The frequency spectrum may extend from below 1 Hz to above 300 MHz

8

Chang Gung UniversityChang Gung University Why MSF( Microstrip Filter)?

In normal operation, signal can easily couple tothe next stage.g

When the surge intruding( in general, they arein the frequency range <300MHz) the MSFin the frequency range <300MHz), the MSF specially using high thermal conductive substrate is good enough to block the transient surge.

Material Properties

Less expensiveAl2O3(Alumina) Less expensiveMedium thermal conductivity (~20W/m·K)

AlN ( Alumina Nitride) High thermal conductivity (180~200W/m·K）


(180 200W/m K）

Chang Gung UniversityChang Gung University Objectives

The aim of this study is to design and fabricated EMP t ti i it th ta cascade EMP protection circuit that can

suppress fast introduced over voltage surges.

The basic configuration of this circuit iscomposed of three element, the traditional

GDT d i dsurge arrester GDT and semiconductor processcompatible micro strip filter (MSF) and an ESDdevice ( we used MOV varistor here).( )


Chang Gung UniversityChang Gung University Design and Fabrication

Circuit diagram

MSF

ESDTVS/MOV/ZenerLEMP

Pulse voltage inject Protected

Arrestor(GDT)

side



Component for ESD and EMPprotection

Gas Discharge Tube( GDT)• Wide use in telecom for primary protection

Hi h bilit 20 000 A• High surge capability: > 20 000 Amps • Shunt capacitance ~2 pF • Response time: < 5 microseconds

Metal-oxide varistor (MOV)• Ideal for AC power line• Ideal for AC power line• Sub nanosecond response • Up to 70 000 Amps surge


Chang Gung UniversityChang Gung University MSF design and Fabrication• Simulation of Microstrip filter Using HFSS• Fabrication 2.4 GHz Microstrip filter on AlN

( Al i Nit id ) Al O b t t( Aluminum Nitride) or Al2O3 substrate.• Deposition of Ti (Titanium)/Au(Gold) on

both side of substrate by Electron beamboth side of substrate by Electron beam evaporation.

• Lithography and etching to make final ttpattern.


MSF on Al2O3 MSF on AlN

13

Chang Gung UniversityChang Gung University MSF design and FabricationProcess facility for AlN/Al2O3 MSF Fabrication

Lithography facility Electron Beam Evaporation system


Chang Gung UniversityChang Gung University Measurement Setup

Measurement for Frequency response

HP 8753DNetwork Analyzer30 KH 6 GH30 KHz-6 GHz



Arrangement of ESD and Surge Pulse injection


Chang Gung UniversityChang Gung University Measurement for ESD Pulse

(1GHz OSC)

ESD

Attenuator

ESD Simulator(6KV)

MOVGDT


MSFGDT

17

Chang Gung UniversityChang Gung University Measurement for Surge Pulse

EMC-PARTNER MIG-systemSurge Testers

Test spec.

1.2us/50us

4KV surge pulse


Chang Gung UniversityChang Gung University Results and Discussion

Frequency response(MSF)S(2,1)-SimulationS(4,3)- only MSF

S(1,1)-SimulationS(3,3)- only MSFS(4,3) only MSF

S(6,5)- MSF+GDT+MOV

-20

0

S(3,3) only MSFS(5,5)- MSF+GDT+MOV

-10

0

-60

-40

dB(S

(2,1

))dB

(S(4

,3))

dB(S

(6,5

))

-30

-20

dB(S

(1,1

))dB

(S(3

,3))

dB(S

(5,5

))

2 3 4 51 6-80

freq, GHz2 3 4 51 6

-40

freq, GHz

The frequency response of MSF is not affected by adding GDT and MOV in I/P and O/P port of the MSF respectively.



ESD wave absorption characteristic

R id l V lResidual Voltage: GDT

12

14 ESD pulse Injected

12

14

GDT

ESD Pulse Injected12

GDT+MSF+MOV

Residual Voltage: GDT+MSF+MOV

4

6

8

10

12 p j

olta

ge(V

) Peak to peak Voltage ~12.2 V/6000V

4

6

8

10

12

olta

ge(V

)

Peak to Peak Voltage: ~11.2V/5606V

4

6

8

10Peak to Peak Voltage: ~1.04V/511V

ltage

(V)

-4.0x10-7 -2.0x10-7 0.0 2.0x10-7 4.0x10-7-2

0

2Vo

Time(sec)-4.0x10-7 -2.0x10-7 0.0 2.0x10-7 4.0x10-7

-2

0

2Vo

Time(sec) -4.0x10-7 -2.0x10-7 0.0 2.0x10-7 4.0x10-7-2

0

2Vo

Ti ( )

Pulse Injected GDT MSF+GDT+MOV

12 2V/6000V 11 2V/5606V 1 04V/511V

Time(sec) Time(sec) Time(sec)

12.2V/6000V 11.2V/5606V 1.04V/511V


Chang Gung UniversityChang Gung UniversitySurge pulse absorption

characteristic

Surge Pulse Injected Residual Voltage: GDT Residual Voltage: GDT+MSF+MOV

MSF+GDT+MOVSurge Pulse Injected GDT MSF+GDT+MOV

4 KV 688V 396V


Chang Gung UniversityChang Gung University Conclusion

The semiconductor process compatible MSFconfiguration is successfully fabricated andconfiguration is successfully fabricated andcharacterized in this study.

The EMP protection behaviors are also detailed The EMP protection behaviors are also detailedand proven.

The results showed that 6 KV ESD pulse and 4KV The results showed that 6 KV ESD pulse and 4KVSurge pulse input could be attenuated to a valueless than 600V and 400V respectively, which meetth VG96903’ i tthe VG96903’s requirement.



Thanks for your kind attention!!


Documents

2.4GHz EMP Protection Circuit with Micro Strip Filter ...research.cgu.edu.tw/ezfiles/14/1014/img/651/99069P.pdf · Chang Gung University 2.4GHz EMP Protection Circuit with Micro Strip