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Institute of Solid State PhysicsTechnische Universität Graz
24. Semiconductors
June 21, 2018
Thermal conductivity
vK Dc
Uj Ej
Average particle energy
u En
internal energy density
Uj ED n D u
U vduj D T Dc TdT
Uj K T
Thermal conductivity
0 as 0K T
Wiedemann - Franz law
Einstein relation:
vDcKne
Bk TDe
2
2
3 BkK Te
3v Bc nkDulong - Petit:
8 22.22 10 W / KelKLT
Wiedemann Franz law
Lorentz number
Lorenz number
At low temperatures the classical predictions for the thermal and electrical conductivities are too high but their ratio is correct. Only the electrons within kBTof the Fermi surface contribute.
8 22.22 10 W / KelKLT
Silicon
silicon crystal = diamond crystal structure
• Important semiconducting material• 2nd most common element on earths crust (rocks, sand, glass, concrete)• Often doped with other elements• Oxide SiO2 is a good insulator
Institute of Solid State PhysicsTechnische Universität Graz
Semiconductors
From Ibach & Lueth
Conduction band
Valence band
( ) ( )n D E f E dE
Absorption and emission of photons
absorption
emission
semiconductorabsorption
Direct and indirect band gaps
Direct bandgap semiconductors are used for optoelectronics
Eg
photonphonons
k
E E
kDirect bandgap Indirect
bandgap
Conduction band
Valence band
Semiconductors
Conduction band
Valence band
Light emitting diodes
GaN
1st Brillioun zone of hcp
E
kxky
Minimum of the conduction band
Free electron dispersion relation
k
E 220
*2 c
k kE E
m
Ec
Conduction band minimum
Near the conduction band minimum, the bands are approximately parabolic.
Effective mass
2*
2
2( )x
md E k
dk
The parabola at the bottom of the conduction band does not have the same curvature as the free-electron dispersion relation. We define an effective mass to characterize the conduction band minimum.
This effective mass is used to describe the response of electrons to external forces in the particle picture.
220
*2 c
k kE E
m
E
kxky
Top of the valence band
2*
2
2
0( )x
md E k
dk
In the valence band, the effective mass is negative.
Charge carriers in the valence band are positively charged holes.
m*h = effective mass of holes
E
k
2*
2
2( )h
x
md E k
dk
Holes
filled states
band empty states
empty states
( ) ( ) ( )
( ) ( ) ( ) ( ) ( ) ( )
( ) ( ) ( )
j ev k D k f k dk
ev k D k f k dk ev k D k f k dk
ev k D k f k dk
A completely filled band does not contribute to the current.
Holes have a positive charge and a positive mass.
Effective Mass
XL
220
*2 c
k kE E
m
2*
2
2
e
x
md Edk
220
*2 v
k kE E
m
2*
2
2
h
x
md Edk
Paul Adrien Maurice Dirac Albert Einstein
Holes
Erwin Schrödinger
Paul Adrien Maurice Dirac Albert Einstein
Holes
Erwin Schrödinger
2 22
2 2
d u d ucdt dx
2
2
du d ukdt dx
Wave equation
Heat equation
Paul Adrien Maurice Dirac Albert Einstein
Holes
Erwin Schrödinger
32
1j j
j
mc p c it
Dirac equation
E = mc2