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These dual N and P-Channel enhancement mode
-30
5 -5 A
= 0.050 = 0.075
= 0.035 = 0.024
30V/5A
N-CH P-CH Units
These devices are well suited for low voltage and
= -4.5V = -10V
= 4.5V
P-Channel
power field effect transistors are produced using
on-state resistance and yet maintain superior switching
MOS-TECH Semiconductor's advanced PowerTrenchprocess that has been especially tailored to minimize
MOSFET
MT4606
Features
Absolute Maximum Ratings(TA = 25 unless otherwise noted)
Dual N & P-Channel PowerTrench®®
performance.
battery powered applications where low in-line powerloss and fast switching are required.
4
3
2
1
5
6
7
8
S
D
SSSO-8
DD
D
G
D1D1
D2D2
S1G1
S2G2
Pin 1
SO-8
N-Channel
-30V/-5A
DS(on) Ω @ VGS = 10VR
DS(on) Ω @ VGSR
DS(on) Ω @ VGSR
DS(on) Ω @ VGSR
Symbol ParameterVDSS
VGSS Gate-Source Voltage ±20 ±20 VID Drain Current - Continuous (Note 1a)
- Pulsed 20 -20PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6(Note 1b) 1(Note 1c) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal CharacteristicsRθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/WRθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Package Marking and Ordering InformationDevice Marking Device Reel Size Tape width Quantity
MT4606 MT4606 13" 12mm 2500 units
Drain-Source Voltage 30 V
= 5 A
75
50 54
30
35
24
= 4 A = 5 A, T = 5 A
P-CHN-CHP-CHN-CH
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max UnitsOff Characteristics
BVDSSDrain-Source BreakdownVoltage
VGS = 0 V, ID = 250 μAVGS = 0 V, ID = -250 μA
30-30 V
ΔBVDSS
ΔTJ
Breakdown VoltageTemperature Coefficient
ID = 250 μA, Referenced to 25°CID = -250 μA, Referenced to 25°C
25-22 mV/°C
IDSSZero Gate Voltage DrainCurrent
VDS = 24 V, VGS = 0 VVDS = -24 V, VGS = 0 V
1-1
μA
IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nAIGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V All -100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μAVDS = VGS, ID = -250 μA
1-1
1.6-1.7
3-3 V
ΔVGS(th)
ΔTJ
Gate Threshold VoltageTemperature Coefficient
ID = 250 μA, Referenced to 25°CID = -250 μA, Referenced to 25°C
-4.34 mV/°C
VGS = 10 V, IDVGS = 10 V, ID J = 125°CVGS = 4.5 V, ID
32 4240
mΩRDS(on)
Static Drain-Source
On-Resistance VGS = -10 V, ID = -5 AVGS = -10 V, ID = -5 A, TJ = 125°CVGS = -4.5 V, ID = -4 A
58 7880
ID(on) On-State Drain Current VGS = 10 V, VDS = 5 VVGS = -10 V, VDS = -5 V
20-20 A
gFS Forward Transconductance VDS = 5 V, IDVDS = -5 V, ID =-5 A
1911 S
Dynamic CharacteristicsCiss Input Capacitance 789
690 pF
Coss Output Capacitance 173306 pF
Crss Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
VDS = -10 V, VGS = 0 V, f = 1.0 MHz 6677 pF
P-CHN-CH
P-CHN-CH
P-CHN-CH
N-CH
P-CH
P-CHN-CH
P-CHN-CH
P-CHN-CH
P-CHN-CH
P-CHN-CH
P-CH
N-CH
MT4606
Maximum Continuous Drain-Source Diode Forward Current
Electrical Characteristics (continued) TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time 2.26.7
4.413.4
ns
tr Turn-On Rise Time 7.59.7
1519.4
ns
td(off) Turn-Off Delay Time 11.819.8
21.335.6
ns
tf Turn-Off Fall Time
VDD = 10 V, ID = 1 A,VGS = 10V, RGEN = 6 Ω
VDD = -10 V, ID = -1 A,VGS = -10V, RGEN = 6 Ω 3.7
12.37.422.2
ns
Qg Total Gate Charge 1614
2623
nC
Qgs Gate-Source Charge 2.52.4 nC
Qgd Gate-Drain Charge
VDS = 15 V, ID = 7 A, VGS = 10 V
VDS = -15 V, ID = -5 A,VGS = -10 V 2.64.8
nC
Drain–Source Diode Characteristics and Maximum RatingsIS 1.3
-1.3 A
VSD Drain-Source Diode ForwardVoltage
VGS = 0 V, IS = 1.3 A (Note 2)VGS = 0 V, IS = -1.3 A (Note 2)
0.74-0.76
1.2-1.2 V
Notes:1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W whenmounted on a0.5 in2 pad of 2 ozcopper
b) 125°/W whenmounted on a .02 in2
pad of 2 oz copper
c) 135°/W when mounted on aminimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
P-CHN-CH
P-CHN-CH
P-CHN-CH
P-CHN-CH
P-CHN-CH
P-CHN-CH
P-CHN-CH
P-CHN-CH
P-CHN-CH
N-CH
N-CH
P-CH
P-CH
MT4606
Typical Characteristics: N-CH
0
10
20
30
0 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V)
4.0V3.5V
3.0V
2.5V
VGS = 10V
5.0V
7.0V
4.5V
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 6 12 18 24 30
ID, DRAIN CURRENT (A)
VGS = 3.0V
5.0V
7.0V10V
4.0V
3.5V
4.5V
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation withDrain Current and Gate Voltage.
0.4
0.7
1.0
1.3
1.6
1.9
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
IDVGS = 10V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
ID
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation withTemperature.
Figure 4. On-Resistance Variation withGate-to-Source Voltage.
0
5
10
15
20
25
30
1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC25oC
125oC
VDS = 10V
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variationwith Source Current and Temperature.
MT4606
= 6A = 6A
Typical Characteristics: N-CH
0
2
4
6
8
10
0 4 8 12 16
Qg, GATE CHARGE (nC)
ID VDS = 5V
15V
10V
0
300
600
900
1200
0.0 5.0 10.0 15.0 20.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
CRSS
COSS
f = 1MHzVGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC10s
1s100ms
100μs
RDS(ON) LIMIT
VGS = 10VSINGLE PULSERθJA = 135oC/W
TA = 25oC
10ms1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
SINGLE PULSERθJA = 135°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse MaximumPower Dissipation.
MT4606
= 6A
= 6A
Typical Characteristics P-CH
0
5
10
15
20
25
30
0 1 2 3 4 5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -10.0V
-5.0V
-3.0V
-7.0V
-4.0V
-6.0V
-3.5V
0.5
1
1.5
2
2.5
0 6 12 18 24 30
-ID, DRAIN CURRENT (A)
VGS = -3.5V
-4.5V-5.0V
-7.0V-10.0V
-4.0V
-6.0V
Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation withDrain Current and Gate Voltage.
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
ID = -5AVGS = -10V
0
0.05
0.1
0.15
0.2
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
ID = -5A
TA = 125oC
TA = 25oC
Figure 13. On-Resistance Variation withTemperature.
Figure 14. On-Resistance Variation withGate-to-Source Voltage.
0
5
10
15
20
25
30
1.5 2.5 3.5 4.5 5.5
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
25oC
125oC
VDS = -10V
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variationwith Source Current and Temperature.
MT4606
= -5A
Typical Characteristics P-CH
0
2
4
6
8
10
0 5 10 15
Qg, GATE CHARGE (nC)
IDVDS = -5V -10V
-15V
0
200
400
600
800
1000
0 5 10 15 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
COSS
CRSS
f = 1 MHzVGS = 0 V
Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s100ms
100μsRDS(ON) LIMIT
VGS = -10VSINGLE PULSERθJA = 135oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
SINGLE PULSERθJA = 135°C/W
TA = 25°C
Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse MaximumPower Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 135oC/W
TJ - TA = P * RθJA(t)Duty Cycle, D = t1 / t2
P(pk)
t1t2SINGLE PULSE
0.010.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.Thermal characterization performed using the conditions described in Note 1c.Transient thermal response will change depending on the circuit board design.
MT4606
= -5.0A
MT4606
Part Marking Information
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����������
�
��
'�()* +�&���,
MT4606
Y
MW
GM
MT4606
9
SOIC(8lds) PackagingConfiguration: Figure 1.0
ComponentsLeader Tape1680mm minimum or210 empty pockets
Trailer Tape640mm minimum or80 empty pockets
SOIC(8lds) Tape Leader and TrailerConfiguration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOIC (8lds) Packaging Information
Standard(no flow code)
L86Z F011
Packaging type
Reel Size
ACTR
13" Dia
Rail/Tube
-
TNR
13" Dia
Qty per Reel/Tube/Bag 4,000 95 4,000
Box Dimension (mm) 343x64x343 530x130x83 343x64x343
Max qty per Box 5,000 30,000 8,000
D84Z
TNR
7" Dia
500
184x187x47
1,000
Weight per unit (gm) 0.0774 0.0774 0.0774 0.0774
Weight per Reel (kg) 0.6060 - 0.9696 0.1182
ESD Label
ACTR Label
343mm x 342mm x 64mmStandard Intermediate box
MT4606ACTR Label sampleLabel
XH1 MT4606ACTR 4000
XH2 C97H22K2-8D3H-K143 P6070561 SPEC:
QTY: 4000
-MOS-TECH SEMICONDUCTOR LTD-
MT46068D3H
SOIC-8 Unit Orientation
MT
46068D3H
Pin 1
Static Dissipative Embossed Carrier Tape
ACTRLabel
Antistatic Cover TapeESD Label
ELECTROSTATICSEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT ICEL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________gms
MAX _____________ gms
CustomizedLabel
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape ismade from a dissipative (carbon filled) polycarbonateresin. The cover tape is a multilayer film (Heat ActivatedAdhesive in nature) primarily composed of polyester film,adhesive layer, sealant, and anti-static sprayed agent.These reeled parts in standard option are shipped with2,500 units per 13" or 330cm diameter reel. The reels aredark blue in color and is made of polystyrene plastic (anti-static coated). Other option comes in 500 units per 7" or177cm diameter reel. This and some other options arefurther described in the Packaging Information table.
These full reels are individually barcode labeled andplaced inside a standard intermediate box (illustrated infigure 1.0) made of recyclable corrugated brown paper.One box contains two reels maximum. And these boxesare placed inside a barcode labeled shipping box whichcomes in different sizes depending on the number of partsshipped.
MT
46068D3H
MT
46068D3H
MT
46068D3H
SOIC-8 Tape and Reel Data
MT4606
10
Dimensions are in millimeter
Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SOIC(8lds)(12mm)
6.50+/-0.10
5.30+/-0.10
12.0+/-0.3
1.55+/-0.05
1.60+/-0.10
1.75+/-0.10
10.25min
5.50+/-0.05
8.0+/-0.1
4.0+/-0.1
2.1+/-0.10
0.450+/-0.150
9.2+/-0.3
0.06+/-0.02
P1A0 D1
P0
F
W
E1
D0
E2B0
Tc
WcK0
T
Dimensions are in inches and millimeters
Tape Size ReelOption Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
12mm 7" Dia 7.00177.8
0.0591.5
512 +0.020/-0.00813 +0.5/-0.2
0.79520.2
2.16555
0.488 +0.078/-0.00012.4 +2/0
0.72418.4
0.469 – 0.60611.9 – 15.4
12mm 13" Dia 13.00330
0.0591.5
512 +0.020/-0.00813 +0.5/-0.2
0.79520.2
7.00178
0.488 +0.078/-0.00012.4 +2/0
0.72418.4
0.469 – 0.60611.9 – 15.4
See detail AA
Dim Amax
13" Diameter Option
7" Diameter Option
Dim AMax
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim Dmin
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mmmaximum
0.5mmmaximum
Sketch C (Top View)Component lateral movement
Typicalcomponentcavitycenter line
20 deg maximum
Typicalcomponentcenter line
B0
A0
Sketch B (Top View)Component Rotation
Sketch A (Side or Front Sectional View)Component Rotation
User Direction of Feed
SOIC(8lds) Embossed Carrier TapeConfiguration: Figure 3.0
SOIC(8lds) Reel Configuration: Figure 4.0
SOIC-8 Tape and Reel Data, continued
MT4606
11
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accuracy or completeness of the information contained in this document nor grants any license to anyintellectual property rights or any other rights of or any third party with respect to the information inthis document.
2. shall have no liability for damages or infringement of any intellectual property or other rights arisingout of the use of any information in this document, including, but not limited to, product data, diagrams, charts,programs, algorithms, and application circuit examples.
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9. You should use the products described herein within the range specified by , especially with respectto the maximum rating, operating supply voltage range, movement power voltage range, heat radiationcharacteristics, installation and other product characteristics. shall have no liability for malfunctions ordamages arising out of the use of products beyond such specified ranges.
10. Although endeavors to improve the quality and reliability of its products, IC products have specificcharacteristics such as the occurrence of failure at a certain rate and malfunctions under certain useconditions. Please be sure to implement safety measures to guard against the possibility of physical injury, andinjury or damage caused by fire in the event of the failure of a product, such as safety design forhardware and software including but not limited to redundancy, fire control and malfunction prevention,appropriate treatment for aging degradation or any other applicable measures. Among others, since theevaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products orsystem manufactured by you.
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13. Please contact a sales office if you have any questions regarding the information contained in thisdocument, semiconductor products, or if you have any other inquiries.
Notes regarding these materials
1.
.
3.
4.
(http://www. .co )5.
.
.
8.
1
34
9.
10.
11.
1 .13.
“C utions”
1. Corp. puts the maximum effort into making semiconductor products betterand more reliable, but there is always the possibility that trouble may occur with them. Trouble withsemiconductors may lead to personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriatemeasures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or(iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
