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AVALANCHE PHOTODIODESSilicon and InGaAs APDs for Laser Guides, Metrology & Bio Medical
OPTICAL TECHNOLOGIES
Short Wavelength Series High Speed Series Near-Infrared (900nm) Enhanced Series InGaAs APD Discrete InGaAs APDs APD-TIA Receiver
SELECTION GUIDE AND NOMENCLATURE
Series 6
Series 8
Series 9
QE=100%
Silicon APD Model Number Description: APDxx - y - zzz - pppp
Wavelength (nm)
Options Descriptions
APD Avalanche Photodiode
xx
y
zzz
pppp
Active Area Size
Optimal Spectral Band
Breakdown Voltage
Package Style(refer to mechanical specifications)
02
05
10
15
30
50
6
8
9
150
250
T52, T46
TO5, T5H, T5i
TO8, T8H
Diameter 0.2 mm
Diameter 0.5 mm
Diameter 1.0 mm
Diameter 1.5 mm
Diameter 3.0 mm
Diameter 5.0 mm
630 nm
800 nm
900 nm
Low Voltage Operation
High Voltage Operation
TO-18 style
TO-5 style
TO-8 style
Silicon APD Typical Spectral Response (TA = 23°C, M = 100)
Res
po
nsi
tivi
ty (
A/W
)
1
SELECTION GUIDE AND NOMENCLATURE
ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)
Model
Active AreaDia.
OptimalWavelength
Responsivity@ Gain M
BreakdownVoltage
DarkCurrent
Ban
dw
idth
Cap
acit
ance
Pack
age
Gai
nM
(mm) (nm) Typ.(A/W)
Typ.(V)
Max(V)
Typ.(MHz)
Max(nA)
Typ.(pF)
(*)
APD02-6-150
APD05-6-150
APD10-6-150
APD15-6-150
APD30-6-150
APD50-6-150
0.2
0.5
1
1.5
3
5
630
630
630
630
630
630
40
40
40
40
20
20
200
200
200
200
200
200
5
5
5
15
30
100
900
400
250
100
20
8
3
8
18
35
140
365
TO-18
TO-18
TO-18
TO-5
TO-5
TO-8
100
100
100
100
50
50
SERIES 6 - 150: Visible Spectrum Optimized
APD02-8-150
APD05-8-150
APD10-8-150
APD15-8-150
APD30-8-150
APD50-8-150
0.2
0.5
1
1.5
3
5
800
800
800
800
800
800
50
50
50
50
30
20
250
250
250
250
250
250
1
1
2
5
10
30
1000
900
600
350
65
25
1.5
3
6
10
40
105
TO-18
TO-18
TO-18
TO-5
TO-5
TO-8
100
100
100
100
60
40
SERIES 8 - 150: High Bandwidth Applications
2
APD02-9-250
APD05-9-250
APD10-9-250
APD15-9-250
0.2
0.5
1
1.5
900
900
900
900
60
60
60
60
350
350
350
350
2
3
5
10
250
220
210
200
0.9
1.5
2.4
4.4
TO-18
TO-18
TO-18
TO-5
100
100
100
100
SERIES 9 - 250: NIR Enhanced Series
(*) Please refer to Mechanical Specification for package options available(**) Condition: Vr = 0.9 x Vbr
APD007-15-60
APD020-15-60
0.075
0.2
1550
1550
9
9
100
100
20 **
50 **
2000
1000
1.2
2.5
TO-18
TO-18
10
10
SERIES 15 - 60: InGaAs APD
150
150
150
150
150
150
150
150
150
150
150
150
250
250
250
250
60
60
ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)
3
APD Series 6-150Silicon Avalanche Photodiodes, 600nm band
APPLICATIONS• Analytical instrument
• Low-light-level measurement
FEATURES• High Sensitivity at Visible Spectrum
• Low Noise
• Low Bias Operation
• Low Temperature Coefficient: 0.14 V/°C
GENERAL RATINGS / ABSOLUTE MAXIMUM RATINGS
APD02-6-150-xxxx
APD05-6-150-xxxx
APD10-6-150-xxxx
APD15-6-150-xxxx
APD30-6-150-xxxx
APD50-6-150-xxxx
-55
-55
-55
-55
-55
-55
+125
+125
+125
+125
+125
+125
+100
+100
+100
+100
+100
+100
Product Model
Active Area
Diameter*1(mm)
Area(mm2)
Package Style*2
Operating Temperature(˚C)
MaxMin
-40
-40
-40
-40
-40
-40
Storage Temperature(˚C)
MaxMin
T52, T52L
TO5, T5H, T5i
TO8, T8H
0.2
0.5
1.0
1.5
3.0
5.0
0.03
0.19
0.78
1.77
7.0
19.6
APD02-6-150-xxxx
APD05-6-150-xxxx
APD10-6-150-xxxx
APD15-6-150-xxxx
APD30-6-150-xxxx
APD50-6-150-xxxx
Product Model
5
5
5
15
30
100
Responsivity
@ Gain M λ = 630 nm
(A/W)
Dark Current
Gain M
(nA)
Ct
Gain M
(pF)
Q.E.
M = 1 λ = 630
nm
(%)
Breakdown Voltage
100uA
(V)
Temperature Coefficient
of Breakdown
Voltage
(V/°C)
Bandwidth
-3dBGain M
λ = 630 nm
(MHz)
Excess Noise Figure
Gain Mλ = 630
nm
GainM
λ = 630 nm
0.2
0.2
0.3
0.5
1
3
Typ Max
200
200
200
200
200
200
150
150
150
150
150
150
Typ Max
3
8
18
35
140
365
80
80
80
80
80
80
0.14
0.14
0.14
0.14
0.14
0.14
900
400
250
100
20
8
0.3
0.3
0.3
0.3
0.3
0.3
100
100
100
100
50
50
*1: Area in which a typical gain can be obtained*2: Please refer to mechanical outline section to choose desired TO can package options. Cap with micro-lens is available for small active area size.
40
20
20
4
50
40
30
20
10
0
Wavelength (nm)200 300 400 500 600 700 800 900 1000 1100
Res
pons
ivity
(A/W
)
100%
80%
60%
40%
20%
0%
Qua
ntum
Effi
cien
cy
Wavelength (nm)200 300 400 500 600 700 800 900 1000 1100
Typ. Spectral Response (TA = 23°C, M = 100) Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)
Typ. Dark Currant vs. Reverse Bias (TA= 23˚C) Typ. Gain vs. Reverse Bias (T
A= 23˚C, 630 nm)
APD SERIES 6-150Silicon Avalanche Photodiodes, 600 nm band
Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f= 1MHz) 0.01 0.10 1.00 10.00
1000
100
10
10 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
Gai
n
Reverse Bias Voltage (V)
FEATURES• High Sensitivity at Visible Spectrum
• Low Noise
• Low Bias Operation
• Low Temperature Coefficient: 0.14 V/°C
APD15-6-150
APD10-6-150
APD05-6-150APD02-6-150
Res
po
nsi
tivi
ty (
A/W
)
Wavelength (nm)
Qu
antu
m E
ffici
ency
Wavelength (nm)
Dar
k C
urr
ent
(pA
)
Reverse Bias Voltage (V)
APD30-6-150 APD50-6-150
Gai
n
Reverse Bias Voltage (V)
Cap
acit
ance
(p
F)
Reverse Bias Voltage (V)
APD50-6-150
APD30-6-150
APD15-6-150
APD10-6-150
APD05-6-150
APD02-6-150
5
APD Series 8-150Silicon Avalanche Photodiodes, 800nm band
APPLICATIONS• Optical Fiber Communication
• Laser range finder
• High speed photometry
FEATURES• Low Bias Operation
• Low Temperature Coefficient: 0.45 V/°C
• High Sensitivity, Low Noise
• High Bandwidth
ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)
GENERAL RATINGS / ABSOLUTE MAXIMUM RATINGS
APD02-8-150-xxxx
APD05-8-150-xxxx
APD10-8-150-xxxx
APD15-8-150-xxxx
APD30-8-150-xxxx
APD50-8-150-xxxx
-55
-55
-55
-55
-55
-55
+125
+125
+125
+125
+125
+125
+100
+100
+100
+100
+100
+100
Product Model
Active Area
Diameter*1(mm)
Area(mm2)
Package Style*2
Operating Temperature(˚C)
MaxMin
-40
-40
-40
-40
-40
-40
Storage Temperature(˚C)
MaxMin
T52, T52L
TO5, T5H, T5i
TO8, T8H
0.2
0.5
1.0
1.5
3.0
5.0
0.03
0.19
0.78
1.77
7.0
19.6
APD02-8-150-xxxx
APD05-8-150-xxxx
APD10-8-150-xxxx
APD15-8-150-xxxx
APD30-8-150-xxxx
APD50-8-150-xxxx
Product Model
1
1
2
5
10
30
Responsivity
@ Gain M λ = 800 nm
(A/W)
Dark Current
Gain M
(nA)
Ct
Gain M
(pF)
Q.E.
M = 1 λ = 800
nm
(%)
Breakdown Voltage
100uA
(V)
Temperature Coefficient
of Breakdown
Voltage
(V/°C)
Bandwidth
-3dBGain M
λ = 800 nm
(MHz)
Excess Noise Figure
Gain Mλ = 800
nm
GainM
λ = 800 nm
0.05
0.1
0.2
0.5
1
3
Typ Max
250
250
250
250
250
250
150
150
150
150
150
150
Typ Max
1.5
3
6
10
40
105
75
75
75
75
75
75
0.45
0.45
0.45
0.45
0.45
0.45
1000
900
600
350
65
25
0.3
0.3
0.3
0.3
0.3
0.3
100
100
100
100
60
40
*1: Area in which a typical gain can be obtained*2: Please refer to mechanical outline section to choose desired TO can package options. Cap with micro-lens is available for small active area size.
50
30
20
6
APD Series 8-150Silicon Avalanche Photodiodes, 800nm band
Typ. Spectral Responce (TA= 23˚C, M = 100)
Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f=1MHz)
60
50
40
30
20
10
0
Wavelength (nm)400 500 600 700 800 900 1000 1100
Res
pons
ivity
(A/W
)
100%
80%
60%
40%
20%
0%
Res
pons
ivity
(A/w
)
Wavelength (nm)400 500 600 700 800 900 1000 1100
Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)
Typ. Gain vs. Reverse Bias (TA= 23˚C, 800 nm)Typ. Dark Current vs. Reverse Bias (T
A= 23˚C)
FEATURES• Low Bias Operation
• Low Temperature Coefficient: 0.45 V/°C
• High Sensitivity, Low Noise
• High Bandwidth
APD50-8-150APD30-8-150
APD15-8-150
APD10-8-150
Res
po
nsi
tivi
ty (
A/W
)
Qu
antu
m E
ffici
ency
Wavelength (nm) Wavelength (nm)
Dar
k C
urr
ent
(pA
)
Gai
n
Reverse Bias Voltage (V) Reverse Bias Voltage (V)
Cap
acit
ance
(p
F)
Reverse Bias Voltage (V)
APD05-8-150 APD02-8-150
APD50-8-150
APD30-8-150
APD15-8-150APD10-8-150
APD05-8-150APD02-8-150
APD SERIES 8-150 SSilicon Avalanche Photodiodes, 850nm band
7
APPLICATIONS• Optical Fiber Communication
• Laser range finder
• High speed photometry
FEATURES• Low Bias Operation
• Low Temperature Coefficient: 0.45 V/°C
• High Sensitivity, Low Noise
• High Bandwidth
• 130-170V Breakdown Voltage
ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)
GENERAL RATINGS / ABSOLUTE MAXIMUM RATINGS
APD02-8-150-xxxxS
APD05-8-150-xxxxS
APD10-8-150-xxxxS
APD15-8-150-xxxxS
APD30-8-150-xxxxS
APD50-8-150-xxxxS
-55
-55
-55
-55
-55
-55
+125
+125
+125
+125
+125
+125
+100
+100
+100
+100
+100
+100
Product Model
Active Area
Diameter*1(mm)
Area(mm2)
Package Style*2
Operating Temperature(˚C)
MaxMin
-40
-40
-40
-40
-40
-40
Storage Temperature(˚C)
MaxMin
T52, T52L
TO5, T5H, T5i
TO8, T8H
0.2
0.5
1.0
1.5
3.0
5.0
0.03
0.19
0.78
1.77
7.0
19.6
APD02-8-150-xxxxS
APD05-8-150-xxxxS
APD10-8-150-xxxxS
APD15-8-150-xxxxS
APD30-8-150-xxxxS
APD50-8-150-xxxxS
Product Model
1
1
2
5
10
30
Responsivity
@ Gain M λ = 800 nm
(A/W)
Dark Current
Gain M
(nA)
Ct
Gain M
(pF)
Q.E.
M = 1 λ = 800
nm
(%)
Breakdown Voltage
100uA
(V)
Temperature Coefficient
of Breakdown
Voltage
(V/°C)
Bandwidth
-3dBGain M
λ = 800 nm
(MHz)
Excess Noise Figure
Gain Mλ = 800
nm
GainM
λ = 800 nm
0.05
0.1
0.2
0.5
1
3
Typ Max
170
170
170
170
170
170
130
130
130
130
130
130
Typ Max
1.5
3
6
10
40
105
75
75
75
75
75
75
0.45
0.45
0.45
0.45
0.45
0.45
1000
900
600
350
65
25
0.3
0.3
0.3
0.3
0.3
0.3
100
100
100
100
60
40
*1: Area in which a typical gain can be obtained*2: Please refer to mechanical outline section to choose desired TO can package options. Cap with micro-lens is available for small active area size.
50
30
20
Add suffix “S” to chosen model of APD Series 8-150 to indicate a tighter breakdown voltage range is required (130-170V range).
APD SERIES 8-150 SSilicon Avalanche Photodiodes, 850nm band
8
FEATURES• Low Bias Operation
• Low Temperature Coefficient: 0.45 V/°C
• High Sensitivity, Low Noise
• High Bandwidth
• 130-170V Breakdown Voltage
Typ. Spectral Responce (TA= 23˚C, M = 100)
Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f=1MHz)
60
50
40
30
20
10
0
Wavelength (nm)400 500 600 700 800 900 1000 1100
Res
pons
ivity
(A/W
)
100%
80%
60%
40%
20%
0%
Res
pons
ivity
(A/w
)
Wavelength (nm)400 500 600 700 800 900 1000 1100
Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)
Typ. Gain vs. Reverse Bias (TA= 23˚C, 800 nm)Typ. Dark Current vs. Reverse Bias (T
A= 23˚C)
APD50-8-150APD30-8-150
APD15-8-150
APD10-8-150
Res
po
nsi
tivi
ty (
A/W
)
Qu
antu
m E
ffici
ency
Wavelength (nm) Wavelength (nm)
Dar
k C
urr
ent
(pA
)
Gai
n
Reverse Bias Voltage (V) Reverse Bias Voltage (V)
Cap
acit
ance
(p
F)
Reverse Bias Voltage (V)
APD05-8-150 APD02-8-150
APD50-8-150
APD30-8-150
APD15-8-150
APD10-8-150
APD05-8-150
APD02-8-150
9
APD SERIES 9-250Silicon Avalanche Photodiodes, 900 nm band
APPLICATIONS• Rangefinder
• Spatial light transmission
• Long wavelength light detection
FEATURES• High Sensitivity in NIR region
• Temperature Coefficient: 1.6 V/°C
• Sensing area diameter 0.2 up to 1.5mm
GENERAL RATINGS / ABSOLUTE MAXIMUM RATINGS
APD02-9-250-xxxx
APD05-9-250-xxxx
APD10-9-250-xxxx
APD15-9-250-xxxx
-55
-55
-55
-55
+125
+125
+125
+125
+100
+100
+100
+100
Product Model
Active Area
Diameter*1(mm)
Area(mm2)
Package Style*2
Operating Temperature(˚C)
MaxMin
-40
-40
-40
-40
Storage Temperature(˚C)
MaxMin
T52, T52L
TO5, T5H, T5i
0.2
0.5
1.0
1.5
0.03
0.19
0.78
1.77
ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)
APD02-9-250-xxxx
APD05-9-250-xxxx
APD10-9-250-xxxx
APD15-9-250-xxxx
Product Model
2
3
5
10
Responsivity
@ Gain M λ = 900 nm
(A/W)
Dark Current
Gain M
(nA)
Ct
Gain M
(pF)
Q.E.
M = 1 λ = 900
nm
(%)
Breakdown Voltage
100uA
(V)
Temperature Coefficient
of Breakdown
Voltage
(V/°C)
Bandwidth
-3dBGain M
λ = 900 nm
(MHz)
Excess Noise Figure
Gain Mλ = 900
nm
GainM
λ = 900 nm
0.3
0.3
0.5
1.0
Typ Max
350
350
350
350
250
250
250
250
Typ Max
0.9
1.5
2.4
4.4
80
80
80
80
1.6
1.6
1.6
1.6
250
220
210
200
0.3
0.3
0.3
0.3
100
100
100
100
*1: Area in which a typical gain can be obtained*2: Please refer to mechanical outline section to choose desired TO can package options. Cap with micro-lens is available for small active area size.
60
10
FEATURES• High Sensitivity in NIR region
• Temperature Coefficient: 1.6 V/°C
• Sensing area diameter 0.2 up to 1.5mm
APD SERIES 9-250Silicon Avalanche Photodiodes, 900 nm band
Typ. Spectral Responce (TA= 23˚C, M = 100)
Typ. Capacitance vs. Reverse Bias (TA= 23˚C)
Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)
Typ. Gain vs. Reverse Bias (TA= 23˚C, 905 nm)Typ. Dark Current vs. Reverse Bias (T
A= 23˚C)
APD15-9-250APD10-9-250
Res
po
nsi
tivi
ty (
A/W
)
Qu
antu
m E
ffici
ancy
Wavelength (nm) Wavelength (nm)
Dar
k C
urr
ent
(pA
)
Gai
n
Reverse Bias Voltage (V) Reverse Bias Voltage (V)
Cap
acit
ance
(p
F)
Reverse Bias Voltage (V)
APD05-9-250
APD15-9-250
APD10-9-250
APD05-9-250
APD02-9-250
APD02-9-250
0 50 100 150 200 250
APD SERIES 15-60InGaAs Avalanche Photodiodes, 1550 nm band
APPLICATIONS• Optical Fiber Communication
• OTDR
• Distance Measurement
• Low-light-level detection
FEATURES• 75 and 200 um diameter Active Area
• Low voltage operation
• Low capacitance
• High sensitivity and low dark current
GENERAL RATINGS / ABSOLUTE MAXIMUM RATINGS
APD007-15-60-xxxx
APD020-15-60-xxxx
-55
-55
+125
+125
+85
+85
Product Model
Active Area
Diameter(mm)
Area(mm2)
Package Style*1Operating
Temperature(˚C)
MaxMin
-40
-40
Storage Temperature
(˚C)
MaxMin
T46, T46L, WCER
T46, T46L, WCER
0.075
0.2
0.004
0.03
2
2
2
2
MaxMax
Forward Current
(mA)
Reverse Current
(mA)
ELECTRO-OPTICAL CHARACTERISTICS (TA = 23°C, typical values at gain listed, unless otherwise specified)
Product Model
APD007-15-60-xxxx
APD020-15-60-xxxx
Typ Max Typ Typ Max Typ
SpectralResponse
Range
(nm)
Responsivity
M = 10 λ = 1550 nm
(A/W)
Dark Current
Vr = 0.9 x Vbr.
(nA)
Capacitance
M = 10f = 1 MHz
(pF)
Breakdown Voltage
Vbr.
100uA
(V)
Temperature Coefficient of Breakdown
Voltage
(V/°C)
Bandwidth-3dB
M = 10λ = 1550 nm
(GHz)
950~
1700
91
5
20
50
1.2
2.5
60
60
80
80
0.15
0.15
2
1
*1: Please refer to mechanical outline section to choose desired package options.
11
APD SERIES 15-60InGaAs Avalanche Photodiodes, 1550 nm band
Typ. Spectral Responce (TA= 23˚C, M = 1)
Typ. Dark Current vs. Reverse Bias (TA= 23˚C)
APD50-8-150APD05-8-150
Res
po
nsi
tivi
ty (
A/W
)
Wavelength (nm)
Dar
k C
urr
ent
(nA
)
Reverse Bias Voltage (V)
Typ. Gain vs. Reverse Bias (TA= 23˚C, 1550 nm)
Gai
n
Reverse Bias Voltage (V)
Typ. Capacitance vs. Reverse Bias (TA= 23˚C)
Cap
acit
ance
(p
F)
Reverse Bias Voltage (V)
APD020-15-60
APD007-15-60
APD50-8-150APD05-8-150
APD020-15-60
APD007-15-60
12
D1
C1
X1
U1S1
R1_
+
S1
R1
C1
D1
X1
U1
Bias Supply Voltage (and temperature compensation as needed)
Current Limiting Resistor
Capacitor
Avalanche Photodiode
Excessive Voltage Protective Circuit
High-speed Op-Amp Readout Circuit
Typical Peripheral Circuit
Series 6-150
Series 8-150
Series 9-250
Mechanical SpecificationsAll units in mm. Pinouts are bottom view.
913
Pin Circle Dia = 2.54
2.53.25
ø2.5
14
T52
3 Case 3 Case
1c2a1a2c
APD02-6-150-T52
APD05-6-150-T52
APD10-6-150-T52
APD02-8-150-T52
APD05-8-150-T52
APD10-8-150-T52
APD02-9-250-T52
APD05-9-250-T52
APD10-9-250-T52
Series 6-150
Series 8-150
Series 9-250
Products
Series 6-150 Series 8-150 Series 9-250
Glass window may extend a maximum of 0.1 mm above the upper surface of the cap.
T52L (with lens)
APD02-6-150-T52L
APD05-6-150-T52L
APD02-8-150-T52L
APD05-8-150-T52L
APD02-9-250-T52L
APD05-9-250-T52L
Products
Pin Circle Dia = 2.54
2.53.8
14
0.67ø1.5 Series 6-150
Series 8-150
Series 9-250
T46
APD007-15-60-T46
APD020-15-60-T46
Products
Series 15-60
Pin Circle Dia = 2.54
1.62.7
ø2.5
13
ø1.2 MAX
3
2 Case
1c3a
Window is broadband A/R coatedCentered at 1300nm.
T46L (with lens)
APD007-15-60-T46L
APD020-15-60-T46L
Products
Series 15-60
Pin Circle Dia = 2.54
1.63.8
13
ø1.2 MAX
3
0.67ø1.5
APD15-6-150-TO5
APD30-6-150-TO5
APD15-8-150-TO5
APD30-8-150-TO5
APD15-9-250-TO5
Products
Series 6-150 Series 8-150 Series 9-250
2 Case 2 Case
1c3a1a3c
Glass window may extend a maximum of 0.2 mm above the upper surface of the cap.
APD15-6-150-T5H
APD30-6-150-T5H
APD15-8-150-T5H
APD30-8-150-T5H
APD15-9-250-T5H
Products
Series 6-150 Series 8-150
Series 6-150
Series 8-150
Series 9-250
Glass window may extend a maximum of 0.2 mm above the upper surface of the cap.
2 Case 2 Case
1c3a1a3c
Series 9-250Pin Circle Dia = 5.08
20
4.14
2.3
ø6.1ø8.25±0.1
ø9.15±0.2
±0.2
ø0.45
ø1.5 MAX
Pin Circle Dia = 5.08
13
4.14
2.3
ø6.1ø8.25±0.1
ø9.15±0.2
±0.2
ø0.45
ø1.5 MAX
3 Case 3 Case
1c2a1a2c
Series 6-150 Series 8-150 Series 9-250
2 Case
1c3a
T5H TO5
14
Mechanical SpecificationsAll units in mm. Pinouts are bottom view.
T5i
Series 6-150 Series 8-150
APD15-6-150-T5i
APD30-6-150-T5i
APD15-8-150-T5i
APD30-8-150-T5i
APD15-9-250-T5i
Products
Glass window may extend a maximum of 0.2 mm above the upper surface of the cap.
Case1c3
2a
Case3
2c
1a
TO8
Series 6-150 Series 8-150
APD50-6-150-TO8
APD50-8-150-TO8
Products
Series 6-150
Series 8-150
Glass window may extend a maximum of 0.2 mm above the upper surface of the cap.
2 Case 2 Case
1c3a1a3c
Pin Circle Dia = 7.5
20
4.9
2.1
ø10.9ø12.3±0.2
ø14 ±0.2
±0.2
ø1 MAX
±0.2
0.5
ø0.45
T8H
Series 6-150 Series 8-150
APD50-6-150-T8H
APD50-8-150-T8H
Products
Series 6-150
Series 8-150
Glass window may extend a maximum of 0.2 mm above the upper surface of the cap.
2 Case 2 Case
1c3a1a3c
Pin Circle Dia = 7.5
20
4.9
2.1
ø10.9ø12.3±0.2
ø14 ±0.2
±0.2
±0.2
0.5
ø0.45
ø1 MAX2
Pin Circle Dia = 5.08
20
4.5
2.4
ø6.1ø8.25±0.1
ø9.15±0.2
±0.2
ø0.45
2
3
WCER
APD007-15-60-WCER
APD020-15-60-WCER
Products
Die is mounted with a tolerance of ±75um.
Series 15-60
Series 6-150
Series 8-150
Series 9-250
Series 9-250
Applications Laser Radar (LADAR) and Rangefinding Low-level Optical Pulse Discrimination Free-space Optical Communication Optical Time Domain Reflectometry Confocal Microscopy
Product Features 80 or 200 µm InGaAs APD Small form-factor design Low dark current High reliability, epoxy free,
hermetic packaging High responsivity in the
0.95-1.65 um wavelength
PLA-200 & PLA-280: High Sensitivity Large Area APD Components
Princeton Lightwave’s PLA series APD offers industry-leading performance in terms of dark current, sensitivity and reliability. It leverages PLI’s proprietary high performance, planar InP-InGaAs APD device design, and high reliability packaging platforms. The device is designed for operation in the linear mode with voltage bias below breakdown, at typical optical gains of 10-15. The APDs employ a front illuminated design, and packaged in either a standard TO-18 or ceramic sub-mount.
The component manufacturing is achieved in a high quality, ISO certified facility. Every device undergoes a rigorous quality and reliability regimen, including temperature cycling and high temperature, high bias burn-in. The package construction is organic free with hermetic sealing of the APD. These devices are designed to operate robustly in harsh environment applications.
PERFORMANCE SPECIFICATIONS
Operating conditions: Case temperature = 23°C
Parameter Description
Test Conditions
Specifications (80µm)
Specifications (200µm) Units
Min Typ. Max Min Typ. Max
Effective Optical Diameter 80 200 µm
Breakdown voltage, Vb Id = 10 µA 55 80 55 80 V Temp. dependence of Vb, ∆Vb/∆T 0.1 0.1 V/°C
Responsivity, R 1550 nm, M=1 0.85 0.85 A/W
Total Dark Current, Id M=10 3 10 10 50 nA Dark Noise Current Density, Jn
M=10 0.2 0.4 pA/√Hz
Capacitance, C† M=10, 1 MHz 0.8 1 1.8 2 pF
Bandwidth, F3dB M=10, 50 Ω load 1 0.4 GHz
Noise Equivalent Power, NEP M=10. 1550 nm 0.027 0.050 pW/√Hz
† Capacitance values include the package capacitance, COC capacitance is 0.15 pF lower
ABSOLUTE MAXIMUM RATINGS 1
Parameter Min Max
Storage Temperature ‐40 85 C
Operating Temperature ‐40 85 C
Forward Current +1 mA
Forward Voltage +1 V
Reverse Current ‐1 mA
Reverse Voltage Vb V
CW Optical Power 2 1 mW
TEC Current 2 Amp
1 Maximum operating ratings indicate operating conditions that the device can sustain without damage for short time intervals. Long term operation under these conditions is not recommended.
2 Assumes a beam spot > 50 um in diameter PRODUCT HANDLING These APDs are sensitive to electrostatic discharge (ESD) and should be handled with appropriate caution, including the use of ESD protective equipment such as grounding straps and anti-static mats. MECHANICAL SPECIFICATIONS: PLA-280, PLA-200 in TO-18 The PLA-080 and PLA-200 are provided in a standard 2-lead TO-18 housing.
PLI’s large area APDs can be provided on a customer-supplied or PLI designed ceramic sub-mount. ORDERING INFORMATION PLA-280: 80 um APD in TO-18 PLA-200: 200 um APD in TO-18
Pin
1
2
Function
Cathode
Anode
Applications • Laser Radar (LADAR) and Rangefinding • Low-level Optical Pulse Discrimination • Free-space Optical Communication • Optical Time Domain Reflectometry • Confocal Microscopy
Product Features • 80 µm InGaAs APD
ultra-low noise TIA • 500 MHz bandwidth • Overload protection circuitry • Industry leading sensitivity and
overload performance • Small form-factor
PLA-8XX – Sub-Nanosecond, High Sensitivity APD Front End Receiver Module
Princeton Lightwave’s PLA-8XX series APD with transimpedance amplifier product family offers industry-leading sensitivity in multiple packaging formats. These modules leverage PLI’s high performance, planar InP-InGaAs avalanche photodiodes (APDs) developed specifically for demanding low light level detection in ranging, LADAR and scientific applications.
The PLA-841 incorporates the above features in a 6-pin, TO-46 style package. It achieves a 500-MHz bandwidth, enabling sub-nanosecond timing accuracy. The ultra low-noise amplifier, in combination with the low dark current of the APD, offers excellent low light-level performance over a wide operating temperature range. The APD module also includes circuitry for overload protection of the receiver, and to enhance recovery from high optical input pulses. The combination of minimal dependence on temperature variation, un-cooled operation and compact packaging enables significant SWaP (size, weight and power) advantages. For more demanding applications where the dependence of the APD operating voltage on temperature must be controlled by temperature stabilization, the PLA-83X and PLA-86X version incorporate, in a flanged packaging format, the receiver performance of the PLA-841 with an internal thermo-electric cooler (TEC) and temperature sensor. The PLA-??? is a TO-37 module designed to provide a compactness approaching that of the PLA-841 (ref TO-46) while providing an internal TEC. The PLA-86X receiver is a TO-66 module, also with an internal TEC, designed to provide form-factor compatibility with legacy systems. All modules have pin-out and form-factor compatibility with PLI’s line of 100-MHz High-Sensitivity APD Front End Receiver Modules for near-perfect interchangeability.
All versions are assembled in a hermetic enclosure, and incorporate packaging designs and processes that ensure robust, reliable operation in harsh environments.
PERFORMANCE SPECIFICATIONS: PLA-8XX
Operating conditions: VDD=+3.3V to GND; Case temperature = 25°C; RLOAD=150 Ω differential
Parameter Description
Test Conditions Specifications
UnitsMin Typical Max
Effective Optical Diameter 80µm APD 80 µm
Breakdown voltage, Vb Id = 10 µA 50 90 V Temp. dependence ΔVb/ΔT 0.15 V/°C Impulse Response (FWHM) M=10, 80µm APD 1 ns
Bandwidth (3dB, optical) M=10, 80µm APD 550 MHz
Responsivity @ 1550 nm Differential output, M=10 165
kV/W Single-ended output, M=10 82.5
Dark noise equivalent power† 1550 nm, M=10 250 fW/√Hz
Output Impedance Differential output 150
Ω Single-ended output 75
Output voltage swing Differential output 0.46
Vp-p Single-ended output 0.23
Dynamic range 1550 nm, M=10 20 dB Power supply current 0nW optical input 25 mA
TEC Voltage†† 0.6 V TEC Current†† 0.6 A
† NEP computed with measured output noise, with no optical illumination, divided by responsivity.
†† For PLA-86X versions only, enables above performance across operating case temperature range of -40°C to + 85°C
ABSOLUTE MAXIMUM RATINGS Parameter Min Max
Supply Voltage1 (+3.3V) ‐0.5 4 Volt
APD Reverse Bias3 0 Vbr Volt Limiter Voltage 0 2.5 Volt TIA Output Voltage ‐0.5 Vdd Volt Tsens Current 1 mAmp TEC Voltage 1 Volt TEC Current 1 Amp
1 Should be applied after APD reverse bias. 2 APD Reverse Bias should be applied before TIA supply voltage
PRODUC These avwith approanti-static MECHAN PLA-841
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MECHANICAL SPECIFICATIONS: PLA-861 The PLA-861 is a 12-pin TO-66 module. All dimensions are in millimeters.
Pin Function 1 NC 2 ‐TEC 3 +TEC 4 TSENS1 5 TSENS2 6 CASE GND 7 +HV (APD Cathode) 8 OUT‐ 9 OUT+ 10 VDD 11 N.C. 12 LIMITER
Applications Laser Radar (LADAR) and Rangefinding Low-level Optical Pulse Discrimination Free-space Optical Communication Optical Time Domain Reflectometry Confocal Microscopy
Product Features 80 or 200 µm InGaAs APD
ultra-low noise TIA 100 MHz bandwidth Overload protection circuitry Industry leading sensitivity and
overload performance Small form-factor
PLA-6XX – High Sensitivity APD Front End Receiver Modules
Princeton Lightwave’s PLA-6XX series APD with GaAs-based FET transimpedance amplifier product family offers industry-leading sensitivity in multiple packaging formats. These modules leverage PLI’s high performance, planar InP-InGaAs avalanche photodiodes (APDs) developed specifically for demanding low light level detection in ranging, LADAR and scientific applications.
The PLA-641 incorporates the above features in a 6-pin, TO-46 style package. It achieves a 100-MHz bandwidth, enabling 2 nanosecond timing accuracy. The ultra low noise of the GaAs-based FET amplifier, in combination with the low dark current of the APD, offers excellent low light-level performance over a wide operating temperature range. The APD module also includes circuitry for overload protection of the receiver, and to enhance recovery from high optical input pulses. The combination of minimal dependence on temperature variation, un-cooled operation and compact packaging enables significant SWaP (size, weight and power) advantages. For more demanding applications where the dependence of the APD operating voltage on temperature must be controlled by temperature stabilization, the PLA-66X version incorporate, in a flanged packaging format, the receiver performance of the PLA-641 with an internal thermo-electric cooler (TEC) and temperature sensor. The PLA-66X receiver is a TO-66 module, also with an internal TEC, designed to provide drop-in compatibility with industry standard pin-outs for applications in legacy systems. All versions are assembled in a hermetic enclosure, and incorporate packaging designs and processes that ensure robust, reliable operation in harsh environments.
PERFORMANCE SPECIFICATIONS: PLA-641 AND PLA-66X
Operating conditions: VDD=+3.3V to GND; Case temperature = 25°C; RLOAD=100 Ω differential
Parameter Description
Test Conditions Specifications
UnitsMin Typical Max
Effective Optical Diameter 200µm APD 200 µm
80µm APD 80
Breakdown voltage, Vb Id = 10 µA 50 90 V Temp. dependence ∆Vb/∆T 0.15 V/°C
Impulse Response (FWHM) M=10, 80µm APD 2.4 ns
M=10, 200µm APD 3.5 ns
Bandwidth (3dB, optical) M=10, 80µm APD 150 MHz
M=10, 200µm APD 100 MHz
Responsivity @ 1550 nm Differential output, M=10 280
kV/W Single-ended output, M=10 140
Dark noise equivalent power† 1550 nm, M=10, 80µm APD 90
fW/√Hz1550 nm, M=10, 200µm APD 130
Output Impedance Differential output 100
Ω Single-ended output 50
Output voltage swing Differential output 0.8
Vp-p Single-ended output 0.4
Dynamic range 1550 nm, M=10 30 dB
Overload recovery†† (equiv. optical signal @ 1us)
Optical input: 10mW, 30ns 65 nW Optical input: 1mW, 30ns 10 nW
Power supply current 0nW optical input 30 mA TEC Voltage 0.6 V TEC Current 1.5 A
† NEP computed with measured output noise, with no optical illumination, divided by responsivity.
†† Equivalent optical signal computed by dividing measured output voltage by responsivity.
ABSOLUTE MAXIMUM RATINGS
Parameter Min Max
Supply Voltage (+3.3V) ‐0.5 4 Volt
Supply Voltage1 (+5V) ‐0.5 6 Volt
APD Reverse Bias3 0 Vbr Volt
Limiter Voltage 0 2.5 Volt
TIA Output Voltage ‐0.5 Vdd Volt
Tsens Current 1 mA
TEC Voltage 1 Volt
TEC Current 2 A
1 For PLA661 and PLA662 versions only; applied as alternative to +3.3V; should be applied after APD reverse bias.
PRODUCT HANDLING These avalanche photodiodes are sensitive to electrostatic discharge (ESD) and should be handled with appropriate caution, including the use of ESD protective equipment such as grounding straps and anti-static mats. MECHANICAL SPECIFICATIONS: PLA-641 PLA-641 is a 6-pin TO-46 module.
ELECTRICAL BLOCK DIAGRAM: PLA 641
LIMITER LIMITER is a control voltage that manages overload protection and recovery of the APD and TIA. Effective overload recovery is achieved by applying fixed voltage so that the limiter diode is zero-biased (typical 0.9V). Alternatively, the pin may be left unconnected, allowing the internal capacitor to hold the zero-bias voltage.
Bottom view
Pin
1
2
3
4
5
6 OUT‐
Function
CASE GND
OUT+
VDD
LIMITER
+HV
MECHANICAL SPECIFICATIONS: PLA-661 and PLA-662 The PLA-661 and PLA-662 are 12-pin TO-66 modules. All dimensions are in millimeters.
Pin Function (PLA‐661) Function (PLA‐662)
1 +5V (alternative) +5V (alternative)
2 ‐TEC ‐TEC
3 +TEC +TEC
4 TSENS1 TSENS1
5 TSENS2 TSENS2
6 CASE GND CASE GND
7 +HV (APD Cathode) +HV (APD Cathode)
8 OUT‐ GND
9 OUT+ OUT‐
10 VDD (+3.3V ) VDD (+3.3V)
11 N.C. N.C.
12 LIMITER LIMITER The PLA-66X is designed to maintain drop-in compatibility with existing systems and applications. For example, though the internal electronics require only +3.3V, the option to use a +5V power supply is provided through use of an internal series resistor that lowers the supply voltage to the amplifier. The PLA-662 also internally terminates one of the TIA outputs to 50-ohms, thereby maintaining a pin-out compatible with applications that allow for a single-end output.
ELECTRICAL BLOCK DIAGRAM: PLA-661
ELECTRICAL BLOCK DIAGRAM: PLA-662
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MS
Tech
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Power Technologies
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