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industry outlooks, growth opportunities, market positions, products and strategies.
These statements are subject to known and unknown risks and uncertainties that
could cause actual results to differ materially from those expressed or implied in our
current views, including: uncertain global economic and industry conditions; demand
for mobility products; customers’ new technology and capacity requirements; the
concentrated nature of our customer base; Applied’s ability to (i) develop, deliver and
support a broad range of products and expand its markets, (ii) achieve the objectives
of operational initiatives, (iii) obtain and protect IP, and (iv) attract, motivate and retain
key employees; and other risks described in our most recent SEC Form 10-Q. All
forward-looking statements are based on management’s estimates, projections and
assumptions as of July 8, 2013, and Applied undertakes no obligation to update any
forward-looking statements.
Sundar Ramamurthy General Manager, Metal Deposition Products
Satheesh Kuppurao General Manager, Front End Products
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MOBILITYPersonal COMPUTING
HIGH PERFORMANCEPERFORMANCE
LOW-POWER versus
MICROPROCESSOR DRAM
Advanced
Transistors
“OFF”
7
pMOS Epi
nMOS Epi
1st Gen HKMG
Materials scaling will drive the Transistor revolution for the next decade
HIGH-K METAL GATE FINFET
8 Source: Gartner 2012 Market Share report
in Implant#1
in RTP#1
in Epi#1
in CMP#1
in these ENABLING Transistor Technologies.
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Endura® PVD/ALD metal gate #1 in PVD for over 20 years with >75% share
>5000 systems worldwide
>800 systems worldwide
Fastest Growing Areas of Transistor Built on Applied’s Benchmark Metals and Epi Platforms
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Selective Epi films deliver speed
Integrated PVD Metal Gate
~$800M Incremental Revenue in 2016 vs. 2012
(assumes 2016 WFE of $37B)
*Source: Gartner
Metal Gate –
12
Metal Gate with High-k Cuts Power Consumption by Reducing Leakage
Low Leakage
13
14
15
16
17
integrated on the same platform
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cap / etch stop
20
• Precision films needed for setting turn-on voltage in FinFETs
• New materials needed to address gate resistance
FinFET Transistor
e ta
Planar
Metal Gate
8X increase
in steps
Metal Gate will grow to >$600M cumulative revenue over next 3 years
3D Today
Silicon
Atoms
smaller atoms are fit into the
same available space
SiGe
Layer
SiGe
Epi
>60%
Improvement
Applied Materials’ Epi equipment
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HIGH VALUE PROBLEM
Temperature Pre-clean
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27
0
2
4
6
8
10
Device performance
2012 TAM
>$500 M
Epi is One of the Fastest Growing Segments of Wafer Fab Equipment
Today
# o
28
Future device
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Performance improvement is not about scaling… At 28 nm, 90% of the performance gains came from materials and device architecture innovation
ARM, IBM & IC INSIGHTS
• The TRANSISTOR revolution has just begun.
• Applied’s leadership in Metal Gate and Epi will drive strong revenue growth
as 20nm and 14/16nm fan out to full production.
• NEW MATERIALS will drive transistor performance into the next DECADE.
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Applied MATERIALS